Sn-Ag基无铅钎料Nd:YAG激光重熔界面研究

通过Nd∶YAG激光重熔和热风二次重熔试验,得到了Sn3.5Ag和Sn3.0Ag0.5Cu无铅钎料球在Cu焊盘的钎料凸台.利用扫描电子显微镜分别分析了激光重熔和热风二次重熔后两种无铅钎料与铜焊盘界面反应及组织形貌,并对激光一次重熔无铅钎料凸台进行了剪切试验,观察了凸台的剪切断口.结果表明,在合适的激光功率和加热时间条件下能够获得成形良好的无铅钎料凸台,Sn3.5Ag和Sn3.0Ag0.5Cu两种无铅钎料与Cu焊盘所产生的界面化合物主要为Cu3Sn和Cu6Sn5,凸台界面反应组织形貌以及剪切承载力与激光功率和加热时间密切相关,而且激光重熔形成的界面化合物影响热风二次重熔界面的组织形貌.     

电子封装和组装中的微连接技术之四

8、钎料熔滴与焊盘的界面反应 球栅阵列(BGA—Ball Grid Array)、倒扣(FC—Flip chip)封装已经逐步成为高密度微电子封装的主流，其关键技术之一是凸点制作，凸点的特性直接影响到封装的可靠性。最常采用的凸点材料为Sn基钎料，目前常用的凸点制作技术一般采用蒸镀、电镀、印刷、拾放等方法将钎料合金、钎料膏、钎料球等预先置于基板上的凸点下金属化层(UBM—Under-Bump Metallurgy)上，     

基于微电子互连应用的无铅高频感应加热重熔技术研究

本文讨论了一种新的高密度微电子面阵封装与组装互连的重熔方法,高频感应加热重熔技术。通过感应加热使得无铅钎料熔化并在焊盘上润湿形成成型良好的的钎料凸台和互连焊点。采用该方法钎料凸台可以在较大的工艺范围内成型,并且可以较容易地实现对钎料凸台和互连焊点的高度控制。通过红外温度测量证明了在合适的工艺区间内树脂基板的温度远低于焊点。实验证明该方法具有局部发热、较高的加热／冷却速率和易于控制焊点形态等特点。     

镀锌板激光钎焊钎缝成形和接头质量研究

本文以CuSi3为钎料,电镀锌钢板为母材,CO2激光为热源,对卷对接接头进行了激光填丝钎焊研究。试验过程中,通过改变钎焊工艺参数及激光入射方式,研究了镀锌钢板激光填丝钎焊在不同热输入下的钎缝外观成形规律。结果表明,激光功率和光斑直径是影响钎缝成形最重要的因素;倾斜入射激光可以改善钎缝成形质量。此外,对不同热输入和同一接头不同部位的界面结合情况和界面元素的分布进行了SEM观察和电子探针分析。结果表明,随着钎焊线能量的增加,Si、Mn元素容易在界面处出现偏聚;相对于接头上部,接头下部钎料与母材结合微弱,界面更容易出现Si、Mn、Zn元素的富集。     

切丝重熔法制备的BGA焊球及其表面形貌

BGA及μBGA、CSP、MCM封装片及倒装片与基板的连接过程中,其关键与核心是钎料凸点的制作技术。制作这种凸点可以采用事先制作好的焊球,介绍了BGA焊球的实验室制备方法——切丝重熔法,用该方法可获得尺寸准确,表面质量较好的焊球。并对焊球颗粒的表面显微结构进行了分析。     

采用重熔焊工艺的混合集成电路结构

本文研究了采用钎料重熔工艺制造的混合集成电路,目的是使电路充分微型化并显著地降低成本。将薄膜电阻和电容网络(R-C)芯片以及硅集成电路芯片外贴在多层厚膜布线的基片上,并用软钎焊与基片连接,开始时芯片为钎料凸点所支承,接着,在钎料的重熔过程中这些芯片借助钎料的表面张力进行自动对正。采用这种工艺所制造出来的接点可以补偿基片的偏移和波动。混合集成电路的机械支承和电气连接只要通过一次重熔过程就都完成了。已经证明这些混合集成电路是完全令人满意的和可靠的。     

电子封装与组装焊点界面反应及微观组织研究进展

软钎焊焊点界面反应是连接金属的最古老的冶金工艺过程。随着倒装芯片(FC)、球栅阵列(BGA)和芯片级封装(CSP)等面封装技术的兴起,近年来Sn基钎料被广泛应用于微电子制造,包括芯片和基板之间的封装互连以及基板与印制电路板之间的组装互连。这就需要系统地研究Sn基钎料焊点界面反应及微观组织。从形态学、热力学和动力学的角度回顾总结了SnPb共晶钎料、高Pb钎料和无Pb钎料与Cu、Ni、Au/Ni/Cu、PdAg焊盘之间的界面反应。     

无钎剂激光喷射植球工艺的研究

为了研究在氮气保护条件下,无钎剂激光喷射植球工艺参数对凸点剥离强度的影响,对激光电流、激光脉冲时间和凸点剥离强度的关系进行了试验,得出了激光脉冲时间一定时,剥离强度随激光电流的增加而降低;激光电流一定时,剥离强度随脉冲时间的增加而增加的结果;同时借助扫描电镜和能谱分析,对凸点(Sn63Pb37)/焊盘(Au/Ni/Cu镀层)界面的组织形貌及相组成进行了分析.结果表明,在保证凸点外观质量的前提下,大激光电流、短激光脉冲时间时凸点剥离强度较低,小激光电流、长激光脉冲时间时凸点剥离强度较高;在现试验条件下,钎料球能很好地润湿焊盘并在凸点/焊盘界面处形成了连续的AuSn4金属间化合物层.     

MEMS器件WLP封装温度特性的有限元模拟分析与实验

圆片级封装(WLP)技术是一种常用于微电子机械系统(MEMS)器件封装的有效方法。对于具有可动结构的MEMS器件来说,WLP的温度特性会对其性能和可靠性产生重要影响。通过对具有不同面阵列凸点分布形式的WLP封装结构进行有限元模拟,分析了封装过程中芯片有源面在温度载荷影响下的应力分布和变形情况,并通过实验对有限元模拟结果进行了修正。结果表明:对于具有3×3,6×6,9×9面阵列凸点分布形式的WLP封装结构来说,其芯片有源面变形的实际测试结果与修正后的模拟结果非常吻合,误差量分别为5.4%,4.1%和0.3%。     

层间激光重熔对激光选区熔化成形件内部残余应力的影响

激光选区熔化（SLM）成形316L不锈钢的内部残余应力是影响成形件力学性能的关键因素之一。考虑到重熔回火效应对残余应力的影响规律，笔者提出了成形件“层间激光重熔”的成形方式，针对性研究了层间重熔对SLM成形件内部残余应力的影响。利用有限元软件Abaqus建立成形过程的三维瞬态仿真模型，模拟了间隔1～10层重熔与未重熔成形件内部残余应力的变化规律，并通过实验研究了间隔2、5、10层重熔与未重熔成形件的内部残余应力、显微组织、表面形貌、抗拉强度、冲击韧性及显微硬度。结果表明：层间激光重熔在重熔层及其相邻层产生的回火效应有利于降低成形件内部的残余应力，使力学性能得到改善。当重熔间隔为2层时，成形件内部残余应力的测量值和模拟值分别较未重熔样件降低了77.1%和70.6%，同时成形件的抗拉强度达到702.99 MPa，相较于未重熔样件提高了6.2%；冲击吸收功达到209.5 J，相较于未重熔样件提高了11.97%；显微硬度达到391.8 HV，相较于未重熔样件提高了6.35%。分析认为，采用层间激光重熔方式可以显著降低成形件内部的残余应力，提高成形件的力学性能。     

Characteristics of the Sn-Pb eutectic solder bump formed via fluxless laser reflow soldering

In an attempt to develop a fluxless reflow solder bumping process, the effects of processing variables, which include energy input rate and time, and the shape of solder disk on the microstructure of the solder/Cu pad interface and the shear strength of the joints were investigated. It was demonstrated that a proper combination of the variables could lead to the formation of a spherical solder bump with shear strength comparable to that formed via the conventional reflow soldering process. In addition, the kinetics of Cu pad dissolution into the solder during laser heating was modeled numerically to elucidate intermetallic formation mechanism at the solder/Cu pad interface. Jointly appointed by CAAM at POSTECH     

Plasma reflow bumping of Sn-3.5 Ag solder for flux-free flip chip package application

A new flux-free reflow process using Ar+10%H/sub 2/ plasma was investigated for application to solder bump flip chip packaging. The 100-/spl mu/m diameter Sn-3.5wt%Ag solder balls were bonded to 250-/spl mu/m pitch Cu/Ni under bump metallurgy (UBM) pattern by laser solder ball bonding method. Then, the Sn-Ag solder balls were reflowed in Ar+H/sub 2/ plasma. Without flux, the wetting between solder and UBM occurred in Ar+H/sub 2/ plasma. During plasma reflow, the solder bump reshaped and the crater on the top of bump disappeared. The bump shear strength increased as the Ni/sub 3/Sn/sub 4/ intermetallic compounds formed in the initial reflow stage but began to decrease as coarse (Cu,Ni)/sub 6/Sn/sub 5/ grew at the solder/UBM interface. As the plasma reflow time increased, the fracture mode changed from ductile fracture within the solder to brittle fracture at the solder/UBM interface. The off-centered bumps self-aligned to patterned UBM pad during plasma reflow. The micro-solder ball defects occurred at high power prolonged plasma reflow.     

Reflow and property of Al/Cu/electroless nickel/Sn-Pb solder bumps

Materials interaction, shearing strength, and bump growth of Al/Cu/electroless nickel/Sn-Pb solder bumps were investigated with respect to reflow conditions. Shearing strength of the solder bump is as high as 64 g/bump for a bump pad dimension of 100×100 μm. Reflow temperature enhances the shearing strength while repeating reflow downgrades the shearing strength to a lowest value of 35 g/bump. A greater bump height is achieved when reflow was conducted at a slower heating rate. Cu penetrates the electroless nickel (EN) layer after reflow, while Al remains unmoved. The diffusion behavior of Cu through the EN layer is discussed. Ni-Sn and Cu-Sn intermetallic compounds form during reflow     

High-lead flip chip bump cracking on the thin organic substrate in a module package

Flip chip bump cracking was observed after Si die attach reflow on the organic substrate of a module package. High-lead bump and eutectic SnPb cladding were used on Si die and the substrate sides, respectively. The reflow peak temperature was 260 °C for compatibility with passive components attach using lead-free solder. Flip chip bump cracking occurred at high-lead solder close to the die side. The cracking was eliminated by lowering the reflow peak temperature down to 225 °C. Main cause of the cracking at 260 °C reflow was attributed to the extensive Sn diffusion into high lead bump. This decreased the melting point of the high-lead solder around the die side, which in turn worsened the adhesion between solder and die due to the coexistence of solid and liquid. Diffusion length estimation showed both of the liquid- and solid-state diffusions of Sn. Crack gap in the solder bump was consistent with thermal expansion mismatch between Si die and organic substrate. The bump cracking was mitigated by use of 225 °C reflow, limiting Sn diffusion and providing a good integrity of high lead bumps on die side.     

Manufacturing of Cu/electroless nickel/Sn-Pb flip chip solder bumps

A process for manufacturing Cu/electroless Ni/Sn-Pb solder bump is discussed in this paper. An attempt to replace zincation with a Cu film as an active layer for the electroless Ni (EN) deposition on Al electrode on Si wafer is presented. Cu/electroless Ni is applied as under bump metallurgy (UBM) for solder bump. The Cu film required repeated etches with nitric acid along with activation to achieve a satisfactory EN deposit. Fluxes incorporating rosin and succinic acid were investigated for wetting kinetics and reflow effectiveness of the electroplated solder bump. The solder plating current density and the reflow condition for achieving solder bumps with uniform bump height were described. The Cu/EN/Sn-Pb solder system was found to be successfully produced on Al terminal in this study that avoids using zincating process     

Laser soldering for chip-on-glass mounting in flat panel display application

Chip-on-glass (COG) mounting of area array electronic packages was attempted by heating the rear surfrace of a contact pad film deposited on a glass substrate. The pads consisted of an adhesion (i.e., Cr or Ti) and a top coating layer (i.e., Ni or Cu) was heated by an UV laser beam transmitted through the glass substrate. The laser energy absorbed on the pad raised the temperature of a solder ball which was in physical contact with the pad, forming a reflowed solder bump. The effects of the adhesion and top coating layer on the laser reflow soldering were studied by measuring the temperature profile of the ball during the laser heating process. The results were discussed based on the measurement of reflectivity of the adhesion layers. In addition, the microsctructures of solder bumps and their mechanical properties were examined.     

Manufacturing and materials properties of Ti/Cu/ElectrolessNi/solder bump on Si

This work attempted to fabricate the solder bump with the structure: Si/Ti/Cu/Electroless Ni/solder. The shear strength of the solder bump, with bump pad of 60 μm in diameter, is around 15 g/bump prior to and after reflow. The solder bumps fractured at the solder. Humidity test at 85% of relative humidity at 85°C and a high temperature treatment at 150°C for 1000 h tend to downgrade the shear strength of the solder portion of the bump, yet not the interface. Both treatments enhance the growth of intermetallic compound (IMC) formed between Ni and solder. The barrier effect of electroless nickel deposit was investigated     

Reaction characteristics of the In-15Pb-5Ag solder with a Au/Ni/Cu pad and their effects on mechanical properties

Reaction characteristics of the In-15Pb-5Ag (wt.%) solder with a Au/Ni/Cu pad during reflow soldering and aging treatment were examined. Interfacial reaction during reflow resulted in either an AuIn₂ or Ni₂₈In₇₂ layer, depending on reflow time. The AuIn₂ layer became thinner and disappeared from the interface, and only the Ni₂₈In₇₂ layer grew with the progress of aging treatment at 130°C. Based on those observations, the dissolution rate of the Au top layer was estimated, and the behavior of the AuIn₂ layer during reflow and aging treatment was discussed. In addition, peak shear load and fracture energy of the solder bump were measured as a function of reflow time and aging treatment. The results were compared with those measured with the Sn-37Pb solder bump.     

Growth prediction of tin/copper intermetallics formed between 63/37 Sn/Pb and OSP coated copper solder pads for a flip chip application

This study quantifies the effect of temperature and time on the growth of Cu-Sn intermetallics, specifically for flip chip/ball grid array packaging technology. The activation energy and the growth rates were determined for solid state diffusion, after the initial assembly reflow(s). Three different types of solder joints were investigated. 1) BGA 63/37 solder joints which were formed by a standard convection oven attach of 30 mil (760 /spl mu/m)diameter solder spheres to OSP protected, Cu plated ball pads of an organic flip chip substrate. The ball pads are solder mask defined and of 0.635 mm nominal diameter. 2) Flip chip bump pad solder joint consisting of 63/37 eutectic solder bumped die attached to a nonsolder mask defined, OSP protected, Cu plated pad of the flip chip substrate. The flip chip bumps on the die are created by screen printing solder paste on the die pads and subsequent reflow attach, by a standard convection oven to the die under bump metallurgy (UBM). The nominal die UBM pad diameter is 0.085 mm. 3) Solder joint formed on a coupon which involved the reflow of the balls randomly placed on a Cu plated layer with no solder mask coating. The investigation was performed by first establishing the intermetallic growth rate at six different temperatures, ranging from 85/spl deg/C to 150/spl deg/C. The relationship between intermetallic growth and time was shown to essentially follow the common parabolic diffusion relationship to temperature especially above 100/spl deg/C. The activation energy (E/sub a/) and the growth constant (k/sub 0/) were then calculated from this data. The results showed that the E. for the total intermetallic thickness was essentially similar for the three solder joint configurations of the ball, bump and the coupon described above. E. varied from 0.31 eV to 0.32 eV, while the k/sub 0/ varied from 18.0 /spl mu/m/s/sup 1/2 / to 24.2 /spl mu/m/s/sup 1/2 /.