Effect of acetylene flow rate on morphology and structure of carbon nanotube thick films grown by thermal chemical vapor deposition

Carbon nanotube (CNT) films were grown on nickel foil substrates by thermal chemical vapor deposition (CVD) with acetylene and hydrogen as the precursors. The morphology and structure of CNTs depending on the acetylene flow rate were characterized by a scanning electron microscope (SEM), a transmission electron microscope (TEM) and a Raman spectrometer, respectively. The effect of acetylene flow rate on the morphology and structure of CNT films was investigated. By increasing the acetylene flow rate from 10 to 90 sccm (standard cubic centimeter per minute), the yield and the diameter of CNTs increase. Also, the defects and amorphous phase in CNT films increase with increasing acetylene flow rate. Translated from Journal of Inorganic Materials, 2006, 21(1): 75–80 [译自: 无机材料学报]     

Effect of gas flow on electronic transport in a DNA-decorated carbon nanotube

We calculate the two-time current correlation function using the experimental data of the current-time characteristics of the Gas-DNA-decorated carbon nanotube field effect transistor. The pattern of the correlation function is a measure of the sensitivity and selectivity of the sensors and suggest that these gas flow sensors may also be used as DNA sequence detectors. The system is modelled by a one-dimensional tight-binding Hamiltonian and we present analytical calculations of quantum electronic transport for the system using the time-dependent nonequilibrium Green's function formalism and the adiabatic expansion. The zeroth and first order contributions to the current I(0)(t) and I(1)(t) are calculated, where I(0)(t) is the Landauer formula. The formula for the time-dependent current is then used to compare the theoretical results with the experiment.     

载气在CVD法制备纳米碳管工艺中的作用

纳米碳管是性能优异的具有准一维特征的纳米材料,CVD法是制备纳米碳管的典型工艺之一。本文以乙炔气体为原料气体、循环失效后的贮氢电极舍金材料作为反应催化剂,研究了在相同反应条件下,CVD法制备纳米碳管过程中载气对纳米碳管形貌和产率的影响。通过对产物TEM观察和TG分析发现,虽然载气不直接参与合成反应但对产物产率和形貌有很大的影响,氢气作为载气可以获得形貌和热稳定性更好的纳米碳管。     

炭纤维表面生长碳纳米管

采用化学气相沉积工艺在炭纤维表面生长了碳纳米管,并观察了它的微观形貌,且对其影响因素进行了初步研究.结果表明:纤维表面的纵向沟槽可以负载催化剂粒子,是生长碳纳米管的物理基础;催化剂的浓度太高,金属粒子容易团聚长大,所得碳纳米管的管径较大;而催化剂浓度太低,则不能在炭纤维整个表面均匀生长碳纳米管;最佳的催化剂溶液的浓度是0.05mol/L的硝酸钴.比较了铁、钴、镍三种过渡金属催化剂,从形成的碳纳米管的质量来看,钴催化剂最佳.     

无氢化学气相沉积法制备碳纳米管

采用无氢的化学气相沉积法（CVD）进行碳纳米管的制备技术研究,并成功地制备了由20—φ80nm左右,长度为50-100μm左右的碳纳米管。通过改变气体的流量等影响因素实现了定向碳纳米管薄膜和多层碳纳米管薄膜以及其它各种形态的碳纳米管的制备。采用微区Raman光谱、扫描电子显微镜（SEM）和透射电子显微镜（TEM）等方法对产物的形貌和结构进行了表征,结果表明采用无氢CVD法可以制备出多种形态的碳纳米管。     

气体种类对CVD法制备碳纳米管的影响研究

以甲烷(CH4)和丙烷(C3H6)为碳源气,以纳米级NiO/SiO2气凝胶为催化剂,采用化学气相沉积法(CVD),在合适的工艺条件下,制备出碳纳米管.通过XRD、TEM、BET吸附等手段对制得的碳纳米管进行了表征,考察气体种类对碳纳米管的影响.结果表明:采用两种碳源气制备的碳纳米管,其形貌和结构均有所不同.由CH4制备的碳纳米管长径比大,管壁光滑,形貌规整;而由C3H6制备的碳纳米管,产物中有少量无定形物,且管壁不光滑,有折点出现.     

制备参数对多壁碳纳米管形貌的影响

以甲烷为碳源气,以氢气为还原气,以纳米级NiO/SiO2气凝胶为催化剂,探讨了气相化学沉积法制备多壁碳纳米管工艺过程中,制备参数对产物形貌的影响。实验结果表明,随着反应时间的延长,多壁碳纳米管的直径没有明显改变,长度增加,长径比随之增加。CH4与H2的流量比例为2∶1时,可制得形貌规整、长径比大的多壁碳纳米管。     

Structural changes of hot-wire CVD silicon carbide thin films induced by gas flow rates

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition in a CH₄ gas flow rate of 1 sccm, and the influence of the gas flow rates of SiH₄ and H₂ gases on the film structure and properties were investigated. In the case of a H₂ gas flow rate below 100 sccm, the SiC:H films obtained in SiH₄ gas flow rates of 3 and 4 sccm were amorphous. On the other hand, when the H₂ gas flow rate was above 150 sccm, SiH₄ gas flow rates of 4 and 3 sccm resulted in a Si-crystallite-embedded amorphous SiC:H film and a nanocrystalline cubic SiC film, respectively. It was found that gas flow rates were important parameters for controlling film structure.     

载气种类对单壁碳纳米管管径的影响研究

单壁碳纳米管的管径对其性能、特别是储氢性能有极其重要的影响,但至今未见制备过程中系统控制单壁碳纳米管管径的报道.本文分别以氦气、氮气和氩气为载气,采用催化裂解法制备了不同直径范围的单壁碳纳米管.HRTEM和Raman光谱分析表明,以氦气、氩气为载气制得的碳管直径分布范围相对较窄,平均直径分别约为1.6和5.0nm.以氮气为载气时碳管直径分布相对较宽,约为2.0～4.5nm.氮气与碳反应生成氮化碳可能是导致单壁碳纳米管直径分布相对较宽的主要原因.分别以氦气、氮气和氩气为载气制得的单壁碳纳米管,在273K,15MPa时质量储氢分数依次为4.21%、6.30%和8.05%.     

Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates

The effect of gas flow rate on surface morphology and crystal quality of ZnTe layers grown on the (1 0 0) GaAs substrates by atmospheric pressure metalorganic vapor phase epitaxy with dimethylzinc and diethyltelluride as the source materials was investigated. The surface morphology of the ZnTe epilayers is significantly improved with increasing the total gas flow rate. X-ray rocking curve and photoluminescence measurements indicate that the total gas flow rate plays a vital role in the growth characteristics of the ZnTe epilayers, and the ZnTe epilayer with best crystal quality is obtained at the total gas flow rate around 300 standard cubic centimeters per minute (sccm) in this work.     

Effect of morphology of catalyst thin film on carbon nanotube growth

The Ni catalyst films were deposited on single crystal Si by magnetron sputtering system. The surface morphologies of the films were controlled by varying the pretreatment temperature in NH₃. We have investigated how the morphology of Ni after thermal treatment influences on the vertically aligned carbon nanotubes growth during thermal chemical vapor deposition. We found that the pretreatment temperature determined the grain size and density of the Ni catalyst that controlled the diameter, length, and density of carbon nanotubes. The degree of crystallization and order of the CNTs as a function of pretreatment temperature was further discussed by Raman spectrums. We found that more aligned and ordered samples correspond to lower I _D/I _G ratios.     

Effect of carbon nanotube network morphology on thin film transistor performance

The properties of electronic devices based on carbon nanotube networks (CNTNs) depend on the carbon nanotube (CNT) deposition method used, which can yield a range of network morphologies. Here, we synthesize single-walled CNTs using an aerosol (floating catalyst) chemical vapor deposition process and deposit CNTs at room temperature onto substrates as random networks with various morphologies. We use four CNT deposition techniques: electrostatic or thermal precipitation, and filtration through a filter followed by press transfer or dissolving the filter. We study the mobility using pulsed measurements to avoid hysteresis, the on/off ratio, and the electrical noise properties of the CNTNs, and correlate them to the network morphology through careful imaging. Among the four deposition methods thermal precipitation is found to be a novel approach to prepare high-performance, partially aligned CNTNs that are dry-deposited directly after their synthesis. Our results provide new insight into the role of the network morphologies and offer paths towards tunable transport properties in CNT thin film transistors.      

Influence of nitrogen flow rates on materials properties of CrN x films grown by reactive magnetron sputtering

Chromium nitride (CrN) hard thin films were deposited on different substrates by reactive direct current (d.c.) magnetron sputtering with different nitrogen flow rates. The X-ray diffraction patterns showed mixed Cr₂N and CrN phases. The variations in structural parameters are discussed. The grain size increased with increasing nitrogen flow rates. Scanning electron microscopy image showed columnar and dense microstructure with varying nitrogen flow rates. An elemental analysis of the samples was realized by means of energy dispersive spectroscopy. The electrical studies indicated the semiconducting behaviour of the films at the nitrogen flow rate of 15?sccm.     

Synthesis of vertically aligned carbon nanotube arrays by injection method in CVD

The well aligned multiwalled carbon nanotube arrays were synthesized by injecting the acetonitrile-ferrocene solution at regular intervals of time. The carbon nanotube arrays were deposited on quartz substrate which is placed at the centre of the CVD reactor in quartz tube. The injection method in chemical vapor deposition allows-excellent control of the catalyst to carbon ratio which facilitates the better growth of aligned carbon nanotubes. The effect of various reaction parameters such as growth temperature, catalyst concentration, gas flow rate, growth time and substrate surface on growth of carbon nanotubes have been studied. It was observed that the diameter of carbon nanotubes increases with increase in catalyst concentration and temperature of the synthesis. The SEM analysis reveals that the average growth rate of carbon nanotube film synthesis was about 1.1 microm/min when the synthesis time was one hour.     

Effects of carrier gas dynamics on single wall carbon nanotube chiral distributions during laser vaporization synthesis

We report on the utility of modifying the carrier gas dynamics during laser vaporization synthesis to alter the single wall carbon nanotube (SWNT) chiral distribution. SWNTs produced from an Alexandrite laser using conventional Ni/Co catalysts demonstrate marked differences in chiral distributions due to effects of helium gas and reactor chamber pressure, in comparison to conventional subambient pressures and argon gas. Optical absorption and Raman spectroscopies confirm that the SWNT diameter distribution decreases under higher pressure and with helium gas as opposed to argon. Fluorescence mapping of the raw soots in sodium dodecylbenzene sulfonate (SDBS)-D2O was used to estimate the relative (n, m)-SWNT content of the semiconducting types. A predominance of type II structures for each synthesis condition was observed. The distribution of SWNT chiral angles was observed to shift away from near-armchair configurations under higher pressure and with helium gas. These results illustrate the importance of gas type and pressure on the condensation/cooling rate, which allows for synthesis of specific SWNT chiral distributions.     

Evaluation of the optimal carrier gas flow rate for the carbon nanotubes growth

Arrays of aligned carbon nanotubes (CNTs) were synthesized in a gas-phase flow reactor by thermal decomposition of reaction mixture (2% solution of ferrocene in toluene) on the surface of silicon substrates heated to 800°C. Variation of the height of the CNT array as a function of position of the substrate in the reactor and carrier gas flow rate was registered. The difference in the obtained dependences and temperature distribution in the reactor points to the necessity of taking into account the change in the concentration of the active carbon component in the gas mixture. An expression associating the parameters of synthesis and thickness of the CNT array being formed on the substrate is offered.     

Investigation of the surface morphology on epitaxially grown fullerene structures

Fullerene layers molecular beam epitaxially grown on, a vanadium-selenide substrate are investigated and the morphology of the layered structures is studied. The individual layer morphologies are derived from the atomic force microscopy picture of the surface. The pattern morphology of certain layers is analyzed by a box counting method. The surface morphology shows fractal behaviour. The pattern of each layer shows different dimensions. The actual dimension depends on the actual distance of the layer from the substrate. The change of the dimension is attributed to the change of the binding behaviour. The topology of the surface is also studied using participation ratio and structural entropy calculations.     

Effect of gas pressure on electron field emission from carbon nanotube forests

This article quantifies the effect of the operating pressure of the H2 + C2H4 gas mixture on the current density and threshold voltage of the electron emission from dense forests of multiwalled carbon nanotubes synthesized using thermal catalytic Chemical Vapor Deposition under near atmospheric pressure process conditions. The results suggest that in the pressure range of interest 400-700 Torr the field emission properties can be substantially improved by operating the process at lower gas pressures when the nanostructure aspect ratios are higher. The obtained threshold voltage approximately 1.75 V/microm and the emission current densities approximately 10 mA/cm2 offer competitive advantages compared with the results reported by other authors.     

Effect of growth temperature on the CVD grown Fe filled multi-walled carbon nanotubes using a modified photoresist

Fe filled carbon nanotubes were synthesized by atmospheric pressure chemical vapor deposition using a simple mixture of iron(III) acetylacetonate (Fe(acac)₃) with a conventional photoresist and the effect of growth temperature (550-950 °C) on Fe filled nanotubes has been studied. Scanning electron microscopy results show that, as the growth temperature increases from 550 to 950 °C, the average diameter of the nanotubes increases while their number density decreases. High resolution transmission electron microscopy along with energy dispersive X-ray investigation shows that the nanotubes have a multi-walled structure with partial Fe filling for all growth temperatures. The graphitic nature of the nanotubes was observed via X-ray diffraction pattern. Raman analysis demonstrates that the degree of graphitization of the carbon nanotubes depends upon the growth temperature.     

Multiwall and bamboo-like carbon nanotube growth by CVD using a semimetal as a catalyst

Multiwall carbon nanotubes have been synthesized on silicon substrates via atmospheric pressure chemical vapour deposition technique using bismuth as a catalyst. Field emission scanning electron microscopy analysis suggests that the samples grow through a tip growth mechanism. High-resolution transmission electron microscopy analysis shows spaghetti-like multiwall carbon nanotubes and with a bamboo-like structure obtained using the Bi catalyst. The quality, in terms of the graphitic crystallinity of the as grown carbon nanotubes, was analyzed by Raman analysis. The study shows that the catalyst, namely bismuth strongly influences the growth density and graphitic crystallinity of the grown carbon nanotubes.