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1.
Ga N films with reactive ion etching(RIE) induced damage were analyzed using photoluminescence(PL).We observed band-edge as well as donor-acceptor peaks with associated phonon replicas,all in agreement with previous studies.While both the control and damaged samples have their band-edge peak location change with temperature following the Varshni formula,its intensity however decreases with damage while the D–A peak increases considerably.Nitrogen post-etch plasma was shown to improve the band edge peak and decrease the D–A peak.This suggests that the N2 plasma has helped reduce the number of trapped carriers that were participating in the D–A transition and made the D°X transition more active,which reaffirms the N2post-etch plasma treatment as a good technique to heal the Ga N surface,most likely by filling the nitrogen vacancies previously created by etch damage. 相似文献
2.
F. Karouta J. L. Weyher B. Jacobs G. Nowak A. Presz I. Grzegory L. M. F. Kaufmann 《Journal of Electronic Materials》1999,28(12):1448-1451
Reactive ion etching of {0001} oriented plate-like GaN single crystals has been investigated using SiCl4:Ar:SF6 chemistry. The reactive ion etching process is highly chemical. Large anisotropy of the etching rate and of the morphology
has been established on (000
) N-polar and (0001) Ga-polar sides of the GaN crystals, with remarkably higher rate on the N-polar side. Atomic force microscopy
measurements have shown smooth surface and good polishing effect obtained on Ga-polar side, while N-polar surface exhibits
an increased roughness of a factor of 10 after RIE. 相似文献
3.
A. T. Ping A. C. Schmitz I. Adesida M. Asif Khan Q. Chen J. W. Yang 《Journal of Electronic Materials》1997,26(3):266-271
Dry etch-induced damage has been investigated using Pd Schottky diodes fabricated on n-type GaN surfaces that were etched
by reactive ion etching in SiCl4 and Ar plasmas. Damage was evaluated by measuring the current-voltage, current-voltage-temperature, and capacitance-voltage
characteristics of the diodes. A plasma chemistry that includes a chemical etching component (SiCl4) was found to significantly reduce the degree of induced damage in comparison to a chemistry that uses only a physical component
(Ar). The effective barrier height, ideality factor, reverse breakdown voltage, reverse leakage current, and the effective
Richardson coefficient of diodes etched under various plasma conditions are presented. The degree of etch-induced damage was
found to depend strongly on the plasma self-bias voltage but saturates with etch time after an initial two-minute etch period.
Rapid thermal annealing was found to be effective in improving the diode characteristics of the etched GaN samples. 相似文献
4.
B. Boudart S. Trassaert X. Wallart J. C. Pesant O. Yaradou D. Théron Y. Crosnier H. Lahreche F. Omnes 《Journal of Electronic Materials》2000,29(5):603-606
We report a comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts in terms of contact resistivity, thermal stability, depth
profile, and surface morphology. The metals were deposited by conventional electron-beam evaporation, and then annealed at
900°C for 30 s in a N2 atmosphere. The lowest value for the specific contact resistivity was obtained using Ti/Al/Ni/Au metallization. Ti/Al/Ni/Au
contacts showed no increase in contact resistivity after aging for five days at 600°C in an air atmosphere. Examination of
the surface morphology using atomic force microscopy revealed that the surface roughness was clearly better in the case of
Ti/Al/Ni/Au contacts. X-ray photoelectron spectroscopy was also employed and gave primary results of Ti/Al/Ni/Au contact formation. 相似文献
5.
6.
A. K. Fung J. E. Borton M. I. Nathan J. M. Van Hove R. Hickman II P. P. Chow A. M. Wowchak 《Journal of Electronic Materials》1999,28(5):572-579
We study the electrical characteristics (current vs voltage, I/V) of Co, In, Mg, Mn, Ni, and Zn each with an Au overlayer
to determine their usefulness as ohmic contact metals to p-type GaN. For all the metals, none of the I/V relationships are
completely linear even after annealing. At a fixed voltage of 3V Co, In, Ni, and Zn have comparable current levels, whereas
Mg and Mn are almost an order of magnitude less. Due to the various mechanisms by which the metals may form ohmic contacts,
we further examine the metals in multilayer combinations in an attempt to reduce contact resistance. Three p-type GaN wafers
with carrier concentrations of 1.2 × 1017, 1.5 × 1017 and 4.7 × 1017 cm−3 are used with Ni/Au metallizations as a common standard for comparison. The lowest average specific contact resistance obtained
in this study is with Co/Au at 0.0081 ohm-cm2. In addition to comparing magnitudes of contact resistances, thermal aging studies of the metal contacts are performed from
300 to 700°C for 6 h periods to determine its effect on their electrical stability. In this test, Ni/Au is found to be the
most electrically invariant with thermal aging prior to failure. However, the temperature at which it fails occurred sooner
than that for many of the other metallizations examined (e.g., Co/Au, In/Au, and Zn/Au). The temperature for failure is arbitrarily
defined to be the temperature that the contact resistance degrades to twice its pre-thermal-aging contact resistance. 相似文献
7.
B. P. Luther S. E. Mohney J. M. Delucca R. F. Karlicek Jr. 《Journal of Electronic Materials》1998,27(4):196-199
The annealing conditions and contact resistivities of Ta/Al ohmic contacts to n-type GaN are reported for the first time.
The high temperature stability and mechanical integrity of Ti/Al and Ta/Al contacts have been investigated. Ta/Al (35 nm/115
nm) contacts to n-type GaN became ohmic after annealing for 3 min at 500°C or for 15 s at 600°C. A minimum contact resistivity
of 5×10−6Ω cm2 was measured after contacts were repatterned with an Al layer to reduce the effect of a high metal sheet resistance. Ti/Al
and Ta/Al contacts encapsulated under vacuum in quartz tubes showed a significant increase in contact resistivity after aging
for five days at 600°C. Cross section transmission electron microscopy micrographs and electrical measurements of aged samples
indicate that the increased contact resistivity is primarily the result of degradation of the metal layers. Minimal reactions
at the metal/GaN interface of aged samples were observed. 相似文献
8.
Ohmic contacts to n-type GaN using Pd/Al metallization 总被引:2,自引:0,他引:2
Ohmic contacts to n-type GaN grown by metalorganic chemical vapor deposition were formed using a Pd/Al-based metallization.
Ohmic contact resistances and specific contact resistances were investigated as a function of rapid thermal annealing temperature,
Pd interlayer thickness, and annealing time. As-deposited Pd/AI was found to produce rectifying contacts while the metallization
exhibited ohmic characteristics after annealing at temperatures as low as 400°C. A minimum contact resistance of 0.9 ohm-mm
(specific contact resistance = 1.2 × 10−5 ohm-cm2) was obtained upon annealing at 650°C for 30 s. For comparison, Al and Ti/Al contacts were also investigated. Auger electron
spectroscopy, secondary ion mass spectrometry, and x-ray diffraction were used to investigate metallurgical reactions. 相似文献
9.
The relationship between the electrical properties and microstructure for annealed Au/Ge/Ni contacts to n-type InP, with an
initial doping level of 1017 cm-3, have been studied. Metal layers were deposited by electron beam evaporation in the following sequence: 25 nm Ni, 50 nm Ge,
and 40 nm Au. Annealing was done in a nitrogen atmosphere at 250-400‡C. The onset of ohmic behavior at 325‡C corresponded
to the decomposition of a ternary Ni-In-P phase at the InP surface and the subsequent formation of Ni2P plus Au10In3, producing a lower barrier height at the InP interface. This reaction was driven by the inward diffusion of Au and outward
diffusion of In. Further annealing, up to 400‡C, resulted in a decrease in contact resistance, which corresponded to the formation
of NiP and Au9ln4 from Ni2P and Au10In3,respectively, with some Ge doping of InP also likely. A minimum contact resistance of 10-7 Ω-cm2 was achieved with a 10 s anneal at 400‡C. 相似文献
10.
J. T. Trexler J. J. Fijol L. C. Calhoun R. M. Park P. H. Holloway 《Journal of Electronic Materials》1996,25(9):1474-1477
Formation and temperature stability of sputter deposited gold ohmic contacts to molecular beam epitaxially grown p-type ZnTe (doped with nitrogen to a free hole concentration of ≈3 × 1018 cm3) have been studied using current-voltage (I-V), Auger electron spectroscopy, secondary ion mass spectrometry, and optical and scanning electron microscopy. The I-V characteristics of ≈1500Å Au/p-ZnTe contacts were measured as-deposited and after heat treatments at 150, 200, 250, and 350°C for 15 min intervals up to 90 min. As deposited, the contacts were poor Schottky contacts, but became ohmic after 15 min at all temperatures. There was an increased resistance at t>15 min for T≤250°C, and a very large resistance increase upon heat treatment for all times at 350°C. The interface between the metallization and ZnTe was initially very planar, and remained planar upon formation of the ohmic contact. Upon heating at T>250°C, Au diffused into ZnTe. The ohmic behavior of the Au/p-ZnTe contacts is attributed to this diffusion which created a highly doped near-surface region in the ZnTe. Microscopy showed that Au also migrated across the ZnTe surface forming an extended reaction zone (≈100 μm) around the dot contact at T≥250°C. 相似文献
11.
Nadeemullah Mahadik Mulpuri V. Rao Albert V. Davydov 《Journal of Electronic Materials》2006,35(11):2035-2040
The performance of a novel Ge/Cu/Ti metallization scheme on n-type GaN has been investigated for obtaining thermally and electrically
stable low-resistance ohmic contacts. Isochronal (2 min.) anneals in the 600–740°C temperature range and isothermal (690°C)
anneals for 2–10 min. duration were performed in inert atmosphere. For the 690°C isothermal schedule, ohmic behavior was observed
after annealing for 3 min. or longer with a lowest contact resistivity of 9.1 × 10−5 Ωcm2 after the 10 min. anneal for a net donor doping concentration of 9.2 × 1017 cm−Ω3. Mean roughness (Ra) for anneals at 690°C was almost constant at around 5 nm, up to an annealing duration of 10 min., which indicates a good
thermal stability of the contact scheme. 相似文献
12.
J. Antoszewski C. A. Musca J. M. Dell L. Faraone 《Journal of Electronic Materials》2000,29(6):837-840
This paper presents transport measurements on both vacancy doped and gold doped Hg0.7Cd0.3Te p-type epilayers grown by liquid phase epitaxy (LPE), with NA=2×1016 cm−3, in which a thin 2 μm surface layer has been converted to n-type by a short reactive ion etching (RIE) process. Hall and
resistivity measurements were performed on the n-on-p structures in van der Pauw configuration for the temperature range from
30 K to 400 K and magnetic field range up to 12 T. The experimental Hall coefficient and resistivity data has been analyzed
using the quantitative mobility spectrum analysis procedure to extract the transport properties of each individual carrier
contributing to the total conduction process. In both samples three distinct carrier species have been identified. For 77
K, the individual carrier species exhibited the following properties for the vacancy and Au-doped samples, respectively, holes
associated with the unconverted p-type epilayer with p ≈ 2 × 1016 cm−3, μ ≈ 350 cm2V−1s−1, and p ≈ 6 × 1015 cm−3, μ ≈ 400 cm2V−1s−1; bulk electrons associated with the RIE converted region with n ≈ 3 × 1015cm−3, μ ≈ 4 × 104 cm2V−1s−1, and n ≈ 1.5 × 1015 cm−3, μ ≈ 6 × 104 cm2V−1s−1; and surface electrons (2D concentration) n ≈ 9 × 1012 cm−2 and n ≈ 1 × 1013 cm−2, with mobility in the range 1.5 × 103 cm2V−1s−1 to 1.5 × 104 cm2V−1s−1 in both samples. The high mobility of bulk electrons in the RIE converted n-layer indicates that a diffusion process rather
than damage induced conversion is responsible for the p-to-n conversion deep in the bulk. On the other hand, these results
indicate that the surface electron mobility is affected by RIE induced damage in a very thin layer at the HgCdTe surface. 相似文献
13.
Ching-Ting Lee Ming-Yuan Yeh Chang-Da Tsai Yen-Tang Lyu 《Journal of Electronic Materials》1997,26(3):262-265
A bilayer Nd/Al metallization structure has been deposited onto low pressure organometallic vapor phase epitaxy grown n-type
GaN ( 1 × 1018 cm−3) by electron-beam evaporation. Ohmic metal contacts were patterned photolithographically for standard transmission line measurement,
and then thermally annealed at temperatures ranging from 200 to 350°C and from 500 to 650°C using conventional thermal annealing
(CTA) and rapid thermal annealing (RTA), respectively. The lowest values for the specify contact resistivity of 9.8 × 10−6 Ω−cm2 and 8 × 10−6 Ω−cm2 were obtained using Nd/Al metallization with CTA of 250°C for 5 min and RTA of 600°C for 30 s. Examination of the surface
morphology using atomic force microscopy as a function of annealing temperature revealed that the surface roughness was strongly
influenced by conventional thermal annealing, it was smooth in the temperature range from 550 to 650°C for rapid thermal annealing.
Auger electron spectroscopy depth profiling was employed to investigate the metallurgy and interdiffusion of contact formation. 相似文献
14.
Metal contacts to n-type GaN 总被引:4,自引:0,他引:4
A. C. Schmitz A. T. Ping M. Asif Khan Q. Chen J. W. Yang I. Adesida 《Journal of Electronic Materials》1998,27(4):255-260
Contacts consisting of various single layer metals to n-type GaN have been formed and characterized. The current-voltage characteristics
were measured for 17 different metals (Sc, Hf, Zr, Ag, Al, V, Nb, Ti, Cr, W, Mo, Cu, Co, Au, Pd, Ni, and Pt) deposited on
the same epitaxial growth layer. The barrier height, ideality factor, breakdown voltage, and effective Richardson coefficients
were measured from those metals which exhibited strong rectifying behavior. The barrier heights for these metal contacts were
measured using current-voltage-temperature and capacitance-voltage techniques. It was found that an increase in metal work
function correlated with an increase in the barrier height. The surface state density of GaN was approximated to be very similar
to CdS and almost a factor of ten less than GaAs. 相似文献
15.
InSb阵列探测芯片的感应耦合等离子反应刻蚀研究 总被引:1,自引:1,他引:0
利用感应耦合等离子(ICP)反应刻蚀(RIE)进行了InSb阵列芯片台面刻蚀,并利用轮廓仪、SEM及XRD对台面形貌以及刻蚀损伤进行分析。采用优化的ICP刻蚀参数,实现的刻蚀速率为70~90 nm/min,刻蚀台阶垂直度~80°,刻蚀表面平整光滑、损伤低。与常规的湿法腐蚀相比,明显降低了侧向钻蚀。台面采用此反应刻蚀工艺,制备了具有理想I-V特性的320×256 InSb探测阵列芯片,在-500 mV到零偏压范围内,光敏元(面积23 μm×23 μm)的动态阻抗(Rd)大于100 MΩ。 相似文献
16.
High quality electrical contacts to GaN are required for the advancement of electronic and optoelectronic devices based on
the III-V nitrides. In this study, the metallurgy of contacts to GaN and the implications for the design of electrical contacts
are considered. First, phase diagrams are estimated for the transition metal-Ga-N systems. The diagrams are then used as an
aid in predicting the reaction products of annealed metal/GaN contacts, to suggest materials that may be useful as thermally
stable electrical contacts and to explore the role of the partial pressure of N2 in the annealing environment on the reactions in metal/GaN contacts. It is believed that this information will be particularly
useful to researchers during the early stages of contact development since very little experimental information is currently
available on the GaN contact metallurgy. 相似文献
17.
Laser beam induced current imaging of reactive ion etching induced n-type doping in HgCdTe 总被引:2,自引:0,他引:2
C. A. Musca J. F. Siliquini E. P. G. Smith J. M. Dell L. Faraone 《Journal of Electronic Materials》1998,27(6):661-667
The nondestructive optical characterization technique of laser beam induced current (LBIC) has been used to illustrate the
effects of reactive ion etching (RIE) of mid-wavelength infrared n-type HgCdTe. RIE may be used as a method of n-p junction
formation, as a means of forming n+ ohmic contacts to wider bandgap HgCdTe, or for mesa isolation etching of epilayers for HgCdTe detectors and emitters. Along
with experimental measurements of the LBIC phenomena, this paper introduces the simulation of LBIC signals using a commercial
semiconductor device modeling package. A number of LBIC maps are presented for different wafer processing conditions, with
the results being explained using the simulation software. The experimental and calculated results bring to light a number
of previously unreported characteristics associated with the LBIC phenomena, including the effect of junction depth, temperature,
and grading of the junction region. In addition to the LBIC technique confirming the presence of an n+ region after RIE processing, it also provides information regarding the depth of the n+ region and lateral extent of the doping. 相似文献
18.
本文在蓝宝石衬底上研制了具有高电流增益截止频率(fT)的InAlN/GaN异质结场效应晶体管 (HFETs)。基于MOCVD外延n -GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600 nm。此外,采用自对准工艺制备了50 nm直栅。由于器件尺寸的缩小,Vgs= 1 V下器件最大饱和电流(Ids)达到2.11 A/mm,峰值跨导达到609 mS/mm。小信号测试表明,器件fT达到220 GHz、最大振荡频率(fmax)达到48 GHz。据我们所知,该fT值是目前国内InAlN/GaN HFETs器件报道的最高结果。 相似文献
19.
R. Pal P. K. Chaudhury B. L. Sharma V. Kumar C. Musca J. M. Dell L. Faraone 《Journal of Electronic Materials》2004,33(2):141-145
Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE).
Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping
of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R0Aj) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current
are studied to identify the bulk and surface current components. Maximum R0Aj=2×107 Θcm2 was achieved in CdTe-passivated, 200×200 μm2 diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology. 相似文献
20.
The effect of reactive ion etch (RIE) induced damage on 4H-SiC surfaces etched in fluorinated plamas has been investigated
and characterized using Ni Schottky diodes and x-ray photoelectron spectroscopic surface analysis. The diodes were characterized
using current-voltage, current-voltage-temperature, and capacitance-voltage measurements with near ideal forward characteristics
(n=1.07) and forward current density as high as 9000 A/cm2 from the control (unetched) devices. High current handling capability was observed in diodes with etched surfaces as well.
Diodes with surfaces etched in CHF3 containing plasmas showed a significant reduction in the barrier height compared to the diodes with surfaces etched in CF4 containing plasma. Control devices exhibited high leakages when reverse biased, which is attributed to the presence of a
thin (∼2 nm) oxide layer at the metal-semiconductor interface. However, under reverse bias diodes with CHF3-etched surfaces showed improvement in leakage current compared to diodes with CF4-etched surfaces and the control diodes. 相似文献