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1.
The compositional dependence of viscous flow in the Ni x Zr100–x amorphous system was investigated under non-isothermal conditions at a heating rate of 10 K min–1in the compositional range fromx=30 tox=64 at % with the aid of a Hereaus TMA 500 dilatometer. The crystallization behaviour of the same glassy alloys under the same non-isothermal conditions was studied with a Perkin-Elmer DSC 7 differential scanning calorimeter. The characteristic crystallization and viscous flow parameters (the onset temperature,T x, of crystallization; the temperature,T m, of maximum heat evolution of the first crystallization step; the enthalpy, H x, of crystallization; the activation energy,Q x, of crystallization; the glass transition temperature,T g; the viscosity values (T g) and min; and the activation energy for viscous flowQ (T>T g), were shown to be dependent on composition. This dependence was examined on the basis of the equilibrium phase diagram of the Ni-Zr-system, and it is shown that glassy alloys possessing eutectic compositions manifest the greatest thermal stability because of the long-range atomic diffusion needed for crystallization to occur. Glassy alloys with nearly peritectoid compositions show low thermal stability, as no long-range diffusion is needed for the formation of the stable crystallization end-products NiZr2 and NiZr. In all cases, the crystallization process is governed by viscosity flow of these glassy alloys.  相似文献   

2.
The melt spinning of Pb-Bi-Ge alloys with Pyrex glass was investigated as a means of producing a superconducting long filament with highT c. Continuous filaments with maximumT c of more than 10 K of Pb100-x-y Bi x Ge y (15x37 and 725) were obtained from the molten state at 1500 K with a winding speed of 0.95 m sec–1. The Pb49Bi33Ge18 filament, which was 34×10–6 m diameter and a ductile material with a tensile strength of 20 MPa and elongation of 2.7%, exhibited superconductivity at the highestT c of 14.3 K. These filaments were found to be polycrystalline with a grain size of more than 5000×10–10 m and had a mixed structure of germanium (diamond) (h c p) and bismuth phases. The germanium element distributed homogeneously in the filament.  相似文献   

3.
An attempt has been made to summarize a large body of data dealing with measurements of the energy gap in superconducting oxides like La2–x Sr x CuO4–y , YBa2Cu3O7–y , and related compounds. A plot of available data of the energy gap 2 as a function of the superconducting transition temperatureT c revealed a large dispersion of some data from 2/k B T c =3.53 for the weak coupling BCS prediction. Nevertheless, we could conclude that the size of the energy gap in these exotic materials is within the weak coupling BCS prediction, in view of some controversial issues that could be responsible for the dispersion, such as the gap anisotropy as well as identification of the energy gap.  相似文献   

4.
New oxyfluoride glasses were prepared in the form MoO3-BaF2-xRF where RF is alkali fluoride (LiF, NaF and mixed NaF–LiF) with x = 5, 10, 15, 20, 25, 30 and 35 mol%. The densities of the studied glasses were measured and the molar volumes were calculated. Thermal properties like glass transition temperature T g, the onset of crystallization temperature T x , crystallization temperature T c and melting temperature T m were determined by using the differential scanning calorimetry (DSC) technique and from which the glass stability S and the glass forming tendency K g were calculated. Values of thermal expansion coefficient and specific heat C p of the present glasses were also measured. All the above properties are correlated with composition alkali fluoride RF content and structure of the glass.  相似文献   

5.
Scattered intensities of light were measured near the gas-liquid critical point of 4 He at scattering angles of 30, 60, and 90° as functions of the reduced temperature =|T–T c |/T c along the critical isochore (T>T c ) and the coexistence curve (T>T c ). The temperature range was 3×10 –5 <<1.5×10 –2 . Critical exponents and coefficients describing divergence of the generalized susceptibility and the correlation length are obtained as (T>T c )=1.31±0.02, v(T>T c )=0.66±0.02, 0 (T>T c )=4.2±0.6 Å, (T>T c )=1.32±0.02, v(T>T c )=0.68±0.02, ± (T>T c )=2.6±0.7 Å, =0.06±0.06(T>T c ), 0.05±0.05(T>T c ), and 0(T>T c )/x± (T>T c )=3.6±0.4. It is pointed out that the quantal nature of 4 He has remarkable influence on the critical behavior of 4 He in the above-mentioned temperature region.  相似文献   

6.
The temperature and Zn concentration dependence of the electrical resistivity, specific heat, magnetic susceptibility, and electron paramagnetic resonance (EPR) spectra of YBa2(Cu1–x Zn x )3O7–y withy0.1 has been measured forx0.16. In addition, the temperature and field dependence of the magnetization has been measured for 2<T<300K and 0<H<9.0T, along with the temperature and quasihydrostatic pressure dependence of the electrical resistivity for selected samples for 0<P<13 GPa. The substitution of Zn for Cu in YBa2Cu3O7–y causes a rapid and nearly linear depression of the superconducting transition temperature,T c , withT c going to 0 K forx 0.10. YBa2(Cu1–x Zn x )3O7–y retains the YBa2Cu3O7-y orthorhombic structure forx0.16 for both the superconducting and nonsuperconducting samples. Initially, the unit cell volume increases nearly linearly with Zn content; however, an abrupt change occurs in the vicinityx=0.8–0.10. Forx<0.10, the temperature dependence of the electrical resistivity,(T), is metallic-like (d/dT>0) and increases gradually with increasing Zn content. However, forx 0.10,(T) becomes semiconductor-like, with a very rapid increase of the resistivity with increasingx. The electrical resistivity, magnetic susceptibility, EPR spectra, and specific heat all indicate that thed-holes associated with the Cu ions become localized in the nonsuperconducting phase,x>-0.10.  相似文献   

7.
Results of measurements of the mean atomic volume (V), the glass transition temperature (T g), the activation energy for glass transition (E t) and the d. c. electrical conductivity () are reported and discussed for ten glass compositions of the Ga–As–Te system. The glasses studied can be represented as Ga x (As0.4Te0.6)100–x glasses, with the additive Ga ranging from 0 to 12 atomic percent (at.%) in the parent As2Te3glass. In the Ga x (As0.4Te0.6)100–x glasses, changes in slope are observed in the V, T g, E t, and other electronic properties, at the composition with a Ga content of 2 at.%. The results are compared with those obtained on introduction of Ag and Cu to the As2Te3and the [0.5As2Te3–0.5As2Se3] glasses. Analysis of the data suggest formation of GaAs, Ga2Te3and excess Te structural units (s.u.) in lieu of some of the original As2Te3s.u., for addition of Ga up to 2 at.% to the parent As2Te3glass; for higher Ga contents, formation of GaAs, GaTe and excess Te s.u. are indicated.  相似文献   

8.
The structure of Ca1 – x Mg x (PO3)2 crystalline and glassy samples was investigated in the whole concentration region of x = 0–1.0. From X-ray diffraction data it was found that, in the crystalline samples, solid solutions are formed for x < 0.3 on the calcium-side of the system, with the structure of -Ca(PO3)2, and for x > 0.6 on its magnesium-side, with the structure of Mg2P4O12. Similar results were obtained from the study of their infrared and Raman spectra. In the glassy state, homogeneous glasses were formed within the whole concentration region. The values of their transformation temperatures, T g, and crystallization temperature, T c, change slightly with the composition and lie within the region of T g = 529–544 °C and T c = 631–677 °C.  相似文献   

9.
Investigations of Y1–x M x Ba2Cu3O7– (M=Ce, Th)c-axis oriented thin film specimens show that the rate of depression ofT c withx is larger for M=Th, than for M=Ce and Pr, and suggest that Ce, like Th, is tetravalent in this compound. Hall effect measurements on Y1–x Pr x Ba2Cu3O7– single crystals reveal aT 2 dependence of the cotangent of the Hall angle in the normal state and a negative Hall anomaly belowT c in the superconducting state, in agreement with recent reports. Our research shows that the depth, , of the negative Hall signal scales withT/T c and that the maximum value of decreases linearly withx and vanishes atx0.24. Magnetoresistance measurements on Y1–x Pr x Ba2Cu3O7– single crystals indicate that the irreversibility lineH(T *) obeys a universal scaling relation characterized by anm=3/2 power law nearT c, with a crossover to a more rapid temperature dependence of belowT/T c 0.6, similar to that observed for polycrystalline specimens.  相似文献   

10.
Bi(Al)-Ca-Sr Cu-O glass-ceramic fibres over 100 cm in length were successfully drawn from a glass preform above the crystallization temperature,T x. The diameters of the uniformly drawn fibres with circular cross-section could be controlled in the range from 25–200 m and the drawing speed was as high as 200 cm min–1. In this work Al2O3 was used to modify the properties of the glass. It increased the glass transition and crystallization temperatures but did not significantly increase the glass working range. Shrinkage and increase of density during heat treatment of the glass fibres were observed. The annealed (825°C/12 h in air) Bi4Al0.1Ca3Sr3Cu4Oy glass-ceramic fibre showed aT c(onset) of 82 K and aT c(zero) of 71 K.  相似文献   

11.
The phase relations in the composition region SrFeO3 – –Fe2O3–BiFeO3 are studied in air by x-ray diffraction and electron microscopy. The 1000°C phase compatibility diagram is constructed. Sr1 – x Bi x FeO3 – solid solutions are prepared in the range 0 < x 0.8. Their lattice parameter is found to vary nonlinearly with x. Two new phases were identified: (Sr,Bi)3Fe4O y (tetragonal lattice, a= 3.907(2) Å, c= 27.30(2) Å) and Sr0.6Bi0.4FeO3 – (tetragonal lattice,a = 5.555(2) Å, c= 11.848(5) Å).  相似文献   

12.
Experimental efforts to characterize and develop an understanding of non Fermi liquid (NFL) behavior at low temperature in f-electron materials are reviewed for three f-electron systems: M1–xUxPd3 (M = Sc, Y), U1–xThxPd2Al3, and UCu5–xPdx. The emerging systematics of NFL behavior in f-electron systems, based on the present sample of nearly ten f-electron systems, is updated. Many of the f-electron systems exhibit the following temperature dependences of the electrical resistivity p, specific heat C, and magnetic susceptibility for T T0, where To is a characteristic temperature: P(T) 1 –aT/T 0, where a < 0 or > 0, C(T)/T (-1/T o) In (T/bT 0), and (T) 1 –c(T/To)1/2. In several of the f-electron systems, the characteristic temperature To can be identified with the Kondo temperature Tk.  相似文献   

13.
We have measured the low-temperature specific heat (1.3T20 K) and the dc magnetic susceptibility (100T250 K) of eight samples of the high-T c superconductor Y x Ba3–x Cu3O7– (x=0.9, 1.0, 1.1) and of two samples of nonsuperconducting YBa2Cu3O6+. We have also performed specific heat measurements on the possible impurity phases: YBa3Cu2O7, Y2BaCuO5, CuO, and BaCuO2+x . The superconducting samples all have a nonzero, sample-dependent linear term * and an upturn inC/T at very low temperature. We show that this anomalous behavior is at least partly due to the presence of a small amount (1%) of BaCuO2+x impurity phase in the measured samples. This is evidenced by the correlation between * and the Curie component of the susceptibility, which is proportional to the amount of paramagnetic impurities.  相似文献   

14.
Quaternary tellurite glass systems of the form 80TeO2–5TiO2–(15 − x)WO3 − xAnOm where AnOm is Nb2O5, Nd2O3, and Er2O3, x = 0.01, 1, 3, and 5 mol% for Nb2O5 and x = 0.01, 0.1, 1, 3, 5, and 7 mol% for Nd2O3 and Er2O3, have been prepared by the melt quenching. Density and molar volumes have been measured and calculated for every glass system. The thermal behavior of the glass series was studied by using the differential thermal analysis DSC. Glass transition temperature T g, crystallization temperature T c, and the onset of crystallization temperature T x were determined. The glass stability against crystallization S (≈100 °C) and glass-forming tendency K g (≈0.3) have been calculated. Specific heat capacity C p (≥1.4 J/g °C) was measured from room temperature and above the T g for every composition in each glass series. Quantitative analysis of the above thermal properties of these new tellurite glass with the structure parameters like average cross-link density (≥2.4), number of bonds per unit volume n b (≥8 × 1028 cm−3), and the average stretching force constant (F) have been studied for every glass composition.  相似文献   

15.
Results are given of an analytic investigation of transient processes inside counterflow apparatuses and heat exchangers with temperature disturbance in one of the heat carriers at the entry to the apparatus.Notation =(t–t0)/(T0–t0),=(T–t0)/(T0 s-t0) relative temperatures - t, T temperatures of material and gas respectively - t0, T0 same for the initial state - Z=[ Vm1/c(1–w/wg)] [–(y0–y)/wg] dimensionless time - m1=1/(1+Bi/) solidity coefficient - B1=( FR/) Biot number - F V heat-exchange coefficients referred to 1 m2 surface and 1 m3 layer - R depth of heat penetration in a portion - portion heat conductivity coefficient - shape coefficient (=0 for a plate,=1 for a cylinder,=2 for a sphere) - c, Cg heat capacities of material and gas respectively - , g volumetric masses - w, Wg flow velocities of material and gas - y distance from the point of entry to the heating heat carrier - y0 heat-exchanger length - Y= Vm1y/WgCg g dimensionless coordinate - m=cw/Cg gWg water equivalent ratio Deceased.Translated from Inzhenerno-Fizicheskii Zhurnal, vol. 20, No. 5, pp. 832–840, May, 1971.  相似文献   

16.
The influence of composition on the formation and stability of Ni-based glassy alloys containing Si and B has been investigated systematically. Depending on the SiB ratio certain compositions, with total metalloid contents in the range 17 to 49 at% (a wider range than has hitherto been reported for metal-metalloid glasses), have been vitrified by melt-spinning to an average thickness of 17 m. For metalloid concentrations greater than 36 to 40 at% the amorphous phase is brittle in the as-quenched state. The highest crystallization temperatures, T x, occur at 32 to 38 at% metalloid, the actual value of T x again depending on the SiB ratio. It is shown that, over a wide composition range, the glass-forming boundary corresponds closely with a value for the reduced crystallization temperature isometric of 0.52. This value corresponds to a critical cooling rate for glass formation of about 106 K sec–1, predicted from kinetic theories and assuming that T x is a good estimate of the glass transition temperature, T g. This agrees quite closely with the cooling rate for approximately 17 m thick tape predicted from thermal studies of the melt-spinning process. Hence, T x/T liq usefully describes the glass-forming ability (GFA) for much of the composition range studied, although preliminary results suggest that near the centre of the glass-forming range the GFA may be over-estimated. Substitution of Si by other metalloid elements from Groups IIIb–Vb in Ni78Si10B12 glassy alloy generally decreases the thermal-stability.  相似文献   

17.
Kinetic studies of crystallization in (Se65Te35)100–x Sb x with 0x10 glasses, using the differential scanning calorimetry technique, were performed. Crystallization enthalpy data, H c, were collected as a function of composition. The crystallization data were examined in terms of recent analyses developed for non-isothermal crystallization studies, to arrive at E c. The results indicate bulk nucleation and crystallization with two- and three-dimensional growth, respectively, for the (Se65Te35)98Sb2 and (Se65Te35)92Sb8 glass composition.  相似文献   

18.
The glass-transition temperature,T g, and the crystallization temperature,T c for glassy Sb10S90 –x Ge x samples were increased by increasing the Ge content. This was attributed to the closeness of the network by bridging Sb and/or S atoms with additional Ge atoms to form harder Ge&#x2013;Sb and/or Ge&#x2013;S bonds. The direct current (d.c.) electrical conductivity for the system Sb10S90 –x Ge x shows semiconducting behaviour with increasing temperature. At low temperatures, the conductivity was attributed to a hopping conduction mechanism, while at high temperatures it was due to regular band-type conduction. The activation energy, E and the conductivity, 0 were increased at low Ge contents. This may be related to the entrance of Ge atoms into the S&#x2013;S chains. On the other hand, the increase of the Ge content above 20 at % lead to a conversion of the behaviour of the E and 0 from the insulating character of S to the semiconducting character of Ge.  相似文献   

19.
    
The surface resistance of YBa2(Cu1–x Zn x )3O7– has been measured in single crystals with oxygen vacancies ranging from=0.03 to 0.15 and for Zn impurity concentrations ofx=0, 0.0015 and 0.0031. Oxygen vacancies in the CuO chains have little influence on the microwave loss untilT c is reduced substantially. However, Zn impurities in the CuO2 plane sites drasticallydecrease the surface resistance, showing that the CuO2 plane conductivity dominates any CuO chain contribution to the microwave properties of YBa2Cu3O7–. The reduced microwave loss in the Zn-doped samples mimics the loss observed in state-of-the-art films and indicates that defects must be present in order to achieve the low microwave loss observed in some films. This sensitivity to low levels of defects is a consequence of the rapid increase in the scattering time in YBa2Cu3O7– belowT c .  相似文献   

20.
    
We present the percolation and electronic properties of (Y1Ba2Cu3O7– )1–xAgx compounds in which silver fills the intergranular space without reducing Tc, which remains at 92 ± 1 K. Normal-state resistivity is decreased by up to two orders of magnitude when adding up to 50 wt.% Ag (T c=87 K), and samples exhibit improved contact resistance, better mechanical properties, and resistance to water. We analyzed the percolation properties of these compounds and found that the critical indicest, s are in agreement with percolation theory, butp c is higher than expected, probably due to the effect of holes. TheJ c estimated from magnetization reaches 5 · 104A/cm2 (atT = 4.2K,H = 0) and shows enhancement of 15–50% by addition of 10 wt.% Ag, which exists also in samples having a higherJ c due to preparation conditions (temperature). We present preliminary results on the 2D percolation problem in (Y1Ba2Cu3O[7– )1–xAgx samples, obtained by preparing Y1Ba2Cu3O7– thick films using the spin-on technique. Preliminary results show good adhesion but a reduced Tc of Y1Ba2Cu3O7– films compared with bulk samples.  相似文献   

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