多芯片组件基板制造技术

多层基板是制作ＭＣＭ的关键技术，本文主要介绍ＭＣＭ＿Ｃ、ＭＣＭ－Ｄ和ＭＣＭ－Ｄ／Ｄ三种ＭＣＭ的基板制作技术。     

多芯片组件热分析技术研究

多芯片组件(MCM)是实现电子系统小型化的重要手段之一。由于封装密度大、功耗高，MCM内部热场对器件的性能和可靠性的影响日益严重。文章讨论了MCM内部热场影响器件可靠性的机理，比较了MCM热场计算的方法和特点，研究了有限元分析的方法和求解过程，进行了实际计算，并提出了几种有效的降低MCM结温的方法。     

多芯片组件热设计技术综述

本文综述了国外ＭＣＭ热设计技术和典型实例，对国外多个公司的ＭＣＭ热设计技术和进行了比较和分析。     

多芯片组件测试方法

由于每个组件的独特设计，多芯片组件（ＭＣＭ）的测试不仅涉及到ＭＣＭ硬件测试，而且还涉及到每个设计的电、热性能的分析评估。在制做ＭＣＭ之前，评估其预定性能需进行综合分析。ＭＣＭ测试方法包括一个原理简图、组件模拟、结构设计的ＣＡＤ接口系统和一个既能提供专门功能ＡＣ测试能力，又能对各个设计的电、热性能进行分析的测试程序。ＭＣＭ界所面临的最大问题之一是使用外购芯片。当使用外来芯片或代理商提供的芯片时，会带来芯片测试精度及预测组件合格率等诸多问题。一旦高级的ＭＣＭｓ采用现代工艺开发成功，那么必须建立起分选高级芯片的各种测试方法。本文讨论了对现存的ＭＣＭ测试进行确定和检验的测试装置并，有助于解决未来ＭＣＭｓ测试所需的方法。     

三维多芯片组件

三维多芯片组件系统集成技术具有组装密度、组装效率及性能更高,系统功能更多等优点,是实现电子装备系统集成的有效途径及关键技术。介绍了３ＤＭＣＭ主要结构（埋置型、有源基板型及叠层型）的特点,并对一些应用实例作了说明。     

高温超导多芯片组件

超导多芯片组件被誉为继高温超导之后 ,超导研究最大的技术革命。采用超导材料作互连线 ,是解决芯片间互连瓶颈的有效技术途径。它可保证电子系统进一步高速化、小型化和宽带化。本文阐述了高温超导 MCM的研究现状、存在的问题及其发展前景。     

低成本多芯片组件

低成本多芯片组件同样具有高性能，是推进ＭＣＭ向工业和民用电子产品应用的重要技术基础。分析了影响ＭＣＭ成本的因素，介绍了国外低成本多芯片组件的现状及应用。     

多芯片组件基板测试的新型组合算法

提出了一种用于多芯片组件互连测试的单探针路径优化的新型组合算法.首先使用启发式算法求出待优化问题的初始解,然后使用模拟退火算法对结果进行改进.模拟实验验证了所提算法的有效性.     

Thermal resistance of side by side multi-chip package: Thermal mode analysis

The thermal mode analysis is used in this paper to optimize the thermal management with optimal locations and chip sizes for multi-chip package. The average thermal resistance is defined and analyzed. The spreading thermal resistance can be expanded into Fourier series so that the thermal modes can be established. For the infinite thermal modes, only a few terms are needed to be considered due to the rapid convergence of solution. The optimal locations and chip sizes can then be determined by using the first few modes to reduce the thermal resistance as minimal as possible. The optimal locations have the cosine wave property so that the wave nodes might be the suitable sites. On the other hand, the optimal chip sizes have the cardinal sine property which decays monotonously. For given optimal locations, the optimal chip sizes are determined by certain modes. These special modes can be used to analyze the range of optimal locations and chip sizes.     

声像分析在系统级封装和多芯片模块检测中的应用

用反射模式的超声波显微镜对系统级封装SIP和多芯片MCM封装模块的品质进行了研究。探测封装内部的分层、裂纹和气泡等间隙类缺陷。用超声探测转换器把脉冲超声波送入样品,同一个转换器把接收到的回声转换成像点。最大的反射振幅是从固体与气体间的界面产生的。在固体材料内部,分层、孔洞及裂纹会造成最大振幅的回声并可以成像。超声波显微镜可发现SIP和MCM样品内间隙类的缺陷分层裂纹和气泡。     

Thermal analysis of a multi-chip package design

Two-dimensional finite difference computer simulations were used for thermal analysis of an advanced multi-chip package design. In order to model high performance VLSI and ULSI applications, power dissipations ranging from 10 to 40 W/cm² on each chip and zero to 5 W/cm² on the substrate were simulated. It was found that heating due to resistive losses in the thin film interconnections between chips can impact package thermal performance. The calculated device-to-water thermal resistance was 0.4° C/W and the worst case chip-to-chip temperature variation was less than 22° C. This excellent thermal performance illustrates the effectiveness of the package’s water cooled heat sink with direct backside contact to each die. Methods to improve thermal performance are discussed.     

基于高亮度LED散热基板导热系数的检测方法

导热系数在化工、建筑、科研生产中有着广泛的应用。目前国内外关于导热系数的检测方法很多,相关的标准也不少。检测样本不同,对检测方法的适用领域、测量范围和精度的要求也不同。在检测时,选择合适的检测方法至关重要。通过对比分析国内外各种导热系数的检测方法,引入一种适合印制电路板行业高亮度LED散热基板导热系数的新检测方法。通过试验验证,确定其在高亮度LED散热基板的导热系数检测方面的适用性。     

Thermal component model for electrothermal analysis of IGBT modulesystems

The insulated gate bipolar transistor (IGBT) modules are getting more accepted and increasingly used in power electronic systems as high power and high voltage switching components. However, IGBT technology with high speed and greater packaging density leads to higher power densities on the chips and increases higher operating temperatures. These operating temperatures in turn lead to an increase of the failure rate and a reduction of the reliability. In this paper, the static and dynamic thermal behavior of IGBT module system mounted on a water-cooled heat sink is analyzed. Although three-dimensional finite element method (3-D FEM) delivers very accurate results, its usage is limited by an imposed computation time in arbitrary load cycles. Therefore, an RC component model (RCCM) is investigated to extract thermal resistances and time constants for a thermal network. The uniqueness of the RCCM is an introduction of the time constants based on the Elmore delay, which represents the propagation delay of the heat flux through the physical geometry of each layer. The dynamic behavior predicted by the thermal network is equivalent to numerical solutions of the 3-D FEM. The RCCM quickly offers insight into the physical layers of the components and provides useful information in a few minutes for the arbitrary or periodic power waveforms. This approach enables a system designer to couple the thermal prediction with a circuit simulator to analyze the electrothermal behavior of IGBT module system, simultaneously     

Modelling and IR measurement of the electronic substrate thermal conductivity

The temperature distribution on a ceramic substrate with a small heating element in the middle has been measured by infrared thermography. By comparing the experimental data with a theoretical analysis, the thermal conductivity could be easily obtained.     

基于模型检查的嵌入式软件构件化分析与验证

对嵌入式软件构件化进行准确分析与验证,能够为嵌入式系统安全、稳定的运行提供保障。提出一种基于模型检查的嵌入式软件构件化分析与验证方法。设计一种用于检查软件构件的模型,为嵌入式软件构件化分析与验证提供理论基础;将嵌入式软件系统模型用SMV语言的形式表达,利用SMV模型检查工具实现对嵌入式软件运行状态的分析与检验。实验结果表明,该模型能够对嵌入式软件构件化的非功能性方面的设计要求进行准确分析与验证,为嵌入式系统安全稳定的运行提供了保障。     

铝基覆铜板导热系数测试方法改进分析

为方便准确地测量铝基覆铜板的导热系数,设计了一种改进的导热系数测试方法。该方法用样本试件作为参照,利用两试件随环境变化导热系数比值近似不变的原理,求出待测试件的导热系数。经过理论分析与仿真验证后,搭建了一种新的铝基覆铜板导热系数测试平台。实验结果显示,该平台有效减少了测量误差,简化了操作流程,节约了实验成本。     

Thermal conductivity of bulk ZnO after different thermal treatments

Thermal conductivities (κ) of melt-grown bulk ZnO samples thermally treated under different conditions were measured using scanning thermal microscopy. Samples annealed in air at 1050°C for 3 h and treated with N-plasma at 750°C for 1 min. exhibited κ=1.35±0.08 W/cm-K and κ=1.47±0.08 W/cm-K, respectively. These are the highest values reported for ZnO. Atomic force microscopy (AFM) and conductive-AFM measurements revealed that surface carrier concentration as well as surface morphology affected the thermal conductivity.     

以PI为基底的金薄膜导热导电性能研究

实验利用瞬态电热技术测量出镀在聚酰亚胺(PI)基底表面的6. 4 nm金薄膜面内方向的导热系数、导电系数和洛伦兹数,并研究了PI薄膜基底的热处理温度与时间对金薄膜导热、导电性能的影响。研究结果表明,PI基底可以促进金薄膜面内方向的热传导与电传导。PI薄膜基底表面金薄膜导热、导电性能最强,适合应用在柔性电子领域中。当对PI薄膜基底的热处理时间为1 h时,随着热处理温度从50℃升到200℃,金薄膜的导热、导电系数呈下降趋势。当热处理温度为200℃时,随着热处理时间从0 h升到6 h,金薄膜的导热、导电性能先下降后上升,并在6 h后趋于稳定。