Transmission electron microscopy analysis of a TiN x substoichiometric CVD coating

The TiN _{x 1–x} substoichiometric chemical vapour deposited titanium nitride coatings have been studied in an early work by means of high-resolution X-ray emission spectroscopy. It was found that a strong vacancy-induced peak was present in the Ti K emission band. Its intensity can be correlated to the 1–x vacancy concentration deduced from nuclear reaction spectroscopy and X-ray diffraction. This relationship is linear if 01–x0.3. If 1–x is higher than 0.3, an anomalous behaviour occurs which is expected to be due to microstructure change. For this purpose, transmission electronic studies of a TiN_{0.57 0.43} layer have been developed. The most striking result of this work is the existence of many stacking faults. These defects are extrinsic ones and the stacking fault energy is about 3.5 mJ m^–2. Their density seems to depend on their distance from the substrate-coating interface. Further investigations are needed to confirm this assumption.     

IR Spectra of La1.85Sr0.15Cu1?xMxO4?δ(M = Zn, Ni, Mg)

Polycrystalline samples La_1.85Sr_0.15Cu_1–xZn_xO_4– (0 x 0.3), La_1.85Sr_0.15Cu_1–xNi_xO_4– (0 x 0.3), and La_1.85Sr_0.15Cu_1–xMg_xO_4– (0 x 0.3) were synthesized by the solid-state reaction method. The crystal structure and phonon vibration were investigated by means of X-ray diffraction (XRD) and infrared spectrum. Zn, Ni, and Mg doping results in the lattice parameter c decreasing and a (b) increasing. The change of the phonon modes around 504 cm^–1 and 681 cm^–1 can be satisfactorily interpreted in terms of the change of the crystal structure and the itinerant nature of charge carrier in CuO₂ sheet. The relation between the structure and phonon vibration is discussed.     

Dielectric Properties of Melt-Grown Cd1 – xZnxTe Crystals

The real (") and imaginary (") parts of the complex dielectric permittivity of Cd_{1 – x} Zn _x Te (x= 0.1–0.2) crystals are measured as a function of temperature and frequency. The "-vs.-temperature data show a maximum, and " rises rapidly at about the same temperature. This behavior is interpreted in terms of compositional fluctuations, structural defects, and the associated internal electric fields.     

Magnetic properties of highly dilutedPdFex andPtFex-alloys. Part II. Susceptibility at micro- and milli-kelvin temperatures

We have measured the 16 Hz susceptibility of the giant magnetic moments induced by Fe impurities in highly dilutedPdFe_x andPtFe_x samples with 2.5 ppm x 75 ppm in a wide temperature range, 30 K T 300 mK, and at static magnetic fields 0,01 mT B 25 mT. We find spin glass freezing at Tf(X)/X0,19mK/ppm Fe forPdFe_x and the larger value 0.26 mK/ppm Fe forPtFe_x. This is the first observation of spin glass freezing inPtFe_x. In the low-temperature range T 0.5T_f(x), the susceptibilities follow — ₀ T with small zero-temperature ₀ values forPdFe_X and vanishing ₀ values forPtFe_x. In the paramagnetic high-temperature range, we find (T — )^it-1 at T 10 mK independent of x forPdFe_x, and at T 2Tf(x) dependent of x forPtFe_x with vanishing values for both systems. The data compare well to the predictions of the Thouless-Anderson-Palmer TAP approach of the Sherrington-Kirkpatrick SK model for spin glasses.     

The mechanisms of yield and plastic flow in HgTe and Cd x Hg1−x Te

Single crystals of HgTe and Cd _x Hg_1–x (0.18<x<0.30), oriented for single slip, have been deformed in four-point bending at strain rates 10^–4 sec^–1 and temperatures from –11 to +84° C for HgTe, and 20 to 195° C for Cd _x Hg_1–x Te. At the lowest temperatures, the stress-strain curve exhibits a sharp yield relaxation and subsequent zero work hardening regime, as commonly observed for other semiconductors. Experiments show that the yielding mechanism is that proposed by Johnston and Gilman for LiF. Possible explanations for the post-yield zero work hardening phenomenon are discussed. The influence of composition, temperature and strain rate on the stress-strain behaviour are reported. At 20° C, the upper and lower yield stresses ( _uy and _1y ) increase with increasingx in qualitative agreement with our earlier hardness results. For Cd_0.2Hg_0.8Te, _1y varies with temperature,T, at a strain rate of 10^–4 sec^–1, according to _1y exp (Q/kT) whereQ is 0.16 eV. For HgTe the comparable value is 0.11 eV. Atx=0.25 and constant temperature, _1y depends on strain rate as _1y ^1/n wheren is 4. The stress level for deformation of Cd_0.2Hg_0.8Te at 10^–4 sec^–1 and 20° C is 2–3 kg mm^–2, comparable with that for InSb at 300° C or Si at 1000° C. Strain rate cycling tests on Cd _x Hg_1–x Te give values of activation volumeV* around 10b³ at 20° C, independent of plastic strain (up to 2–3%), suggesting that deformation in these alloys is controlled by the Peierls mechanism, as observed in other II–VI compounds.     

Nuclear ferromagnetic ordering of141Pr in the diluted Van Vleck paramagnets Pr1−x Y x Ni5

We report on the first investigation of the effect of magnetic dilution on nuclear magnetic spin interactions in metals; we studied this effect in the diluted Van Vleck paramagnets Pr_1–xY_xNi₅. In addition, we investigated the electronic magnetic properties of these intermetallic compounds. For this purpose, we have measured the nuclear and electronic susceptibilities of Pr_1–xY_xNi5 with x = 0 to 0.2 at 50K T 8 mK and at 2.2 K T 300 K. We observe a linear decrease of the electronic Van Vleck susceptibility and of the hyperfine enhancement factor by 13% (per mole Pr³⁺). The hyperfine-enhanced nuclear susceptibility decreases by about a factor of three when going fromx = 0 tox = 0.2. The samples show nuclear ferromagnetic transitions of¹⁴¹Pr with nuclear Curie temperatures T_c decreasing from 370 K to 100 K and Weiss temperatures decreasing from 218 K to 13 K in this concentration range. These data are compared with the results of mean-field calculations. In addition, we report on measurements of the nuclear spin relaxation time of these compounds, for which we find values of a few msec at millikelvin temperatures and a critical speeding-up at T_c. Our data give hints that for x > 0.2 the character of the nuclear magnetic transition may change, possibly to a nuclear spin glass freezing.     

Anomalous High-Temperature Properties of BaPbO3-Based Solid Solutions

The thermal expansion, thermal stability, and electrical resistivity of the Ba_{1 – x} M _x Pb_{1 + y} O_{3 +} (M = Sr, Ca; 0 x 1.0, 0 y 0.2) and Ba_{1 – x} M" _x Pb_{1 – y} M" _y O_{3 +} (M" = K, La; M" = Sc, Sb; x, y= 0.01) ceramic materials were studied between 293 and 1073 K in air. The linear thermal expansion coefficient of the ceramics was found to increase abruptly at 700 K, from (10–14) × 10^–6K^–1in the range 300–600 K to (13–18) × 10^–6K^–1in the range 800–1000 K. The electrical resistivity of the ceramics passes through a sharp maximum near 750 K, with the largest jump in resistivity at the compositions Ba_0.6Sr_0.4PbO₃and Ba_0.9Ca_0.1PbO₃. The anomaly in thermal expansion is likely associated with the rearrangement of the lead–oxygen polyhedra in the structure of the solid solutions, and the jump in resistivity is attributable to changes in the average oxidation state of Pb ions in the surface layer of the ceramics.     

Investigation of the dominant point defects in tetragonal YBa2Cu3Ox at elevated temperatures

The manner in which oxygen is incorporated into YBa₂Cu₃O _x (YBCO) at 800°C for values ofx close to 6 is shown to be in the form of neutral oxygen interstitials, O _i ^x . The experimental data on which this conclusion is based are obtained from measurements of oxygen partial pressure,P(O₂), as a function of compositionx and temperatureT (5.99x 6.35, 825T1120 K). The data are obtained by a solid-state electrochemical method. Other conclusions of this study include: (a) O _i ^x are noninteracting forx 6. (b) The stoichiometric composition of YBCO isx 6.0. (c) The reaction enthalpy of oxidation is 179 kJ/mol O₂. (d) The Fermi level changes by –0.2 eV asx increases from 6.05 to 6.35.     

Synthesis of silicon nitride powder through nitrogen gas atomization

The feasibility of synthesizing silicon nitride powder utilizing reactive atomization processing was analysed. The range of times required for the flight time of particles, the cooling rate of the silicon melt, the reaction time of silicon and nitrogen, and the diffusion of nitrogen through silicon nitride layers were obtained and compared. The results of this study indicated that the production of silicon nitride powder through the reactive atomization process would be limited by diffusion of nitrogen through the nitride (ash) layer, assuming the nitride layer was coherent and the unreacted core model was a valid representation of the liquid silicon-silicon nitride system.Nomenclature k(T) reaction rate constant at temperature, T(s^–1) - k ₀ Arrhenius coefficient - E activation energy (kJ mol^–1) - R gas constant - T temperature (K) - fraction of normalized conversion of -phase in time t - fraction of normalized conversion of -phase in time t - k reaction rate constant for -phase (s^–1) - k reaction rate constant for -phase (s^–1) - k ⁱ intrinsic first-order rate constant for -phase (s^–1) - x conversion fraction of -phase in time t - x conversion fraction of -phase in time t - n reaction order for -phase = 1 - n reaction order for -phase = 0.5 - J diffusion flux (mol m^–2 s^–1) - D diffusivity, or diffusion coefficient (m² s^–1 or cm² s^–1) - dC change in concentration (mol m^–3) - dl change in distance, l (m) - A(_g) gaseous reactant A - B reactant B (may be solid or liquid) - P solid product P - b stoichiometric coefficient of reactant B - p stoichiometric coefficient of product P - t time of reaction passed (s) - time for complete reaction of a particle (s) - X _B conversion fraction - r _c core radius (m) - R _p particle radius (m) - _B molar density of reactant B (mol m^–3) - k _g mass transfer coefficient between fluid and particle (m s^–1) - C _Ag concentration of gaseous reactant A (mol m^–3) - D _e effective diffusion coefficient of gaseous reactant in ash layer (m² s^–1)     

Some electrical characteristics of lithium and yttrium sialons

Some electrical properties of hot-pressed lithium sialons, Li _x/8Si_6–3x/4Al_5x/8O _x N_8–x havingx<5 and an yttrium sialon were measured between 291 and 775 K; the former consisted essentially of a single crystalline phase whereas the latter contained 98% glassy phase. For lithium sialons, the charging and discharging current followed al(t) t ^–nlaw withn=0.8 at room temperature. The d.c. conductivities were about 10^–13 ohm^–1 cm^–1 at 291 K and rose to 5×10^–7 ohm^–1 cm^–1 at 775 K. At high temperatures electrode polarization effects were observed in d.c. measurements. The variation of the conductivity over the frequency range 200 Hz to 9.3 GHz followed the () ⁿ law. The data also fitted the Universal dielectric law,() ^n–1 well, and approximately fitted the Kramers-Kronig relation()/()– =cot (n/2) withn decreasing from 0.95 at 291 K to 0.4 at 775 K. The temperature variations of conductivities did not fit linearly in Arrhenius plots. Very similar behaviour was observed for yttrium sialon except that no electrode polarization was observed. The results have been compared with those obtained previously for pure sialon; the most striking feature revealed being that _d.c. for lithium sialon can be at least 10³ times higher than that of pure sialon. Interpretation of the data in terms of hopping conduction suggests that very similar processes are involved in all three classes of sialon.     

Non fermi liquid ground states in strongly correlated f-electron materials

Experimental efforts to characterize and develop an understanding of non Fermi liquid (NFL) behavior at low temperature in f-electron materials are reviewed for three f-electron systems: M_1–xU_xPd₃ (M = Sc, Y), U_1–xTh_xPd₂Al₃, and UCu_5–xPd_x. The emerging systematics of NFL behavior in f-electron systems, based on the present sample of nearly ten f-electron systems, is updated. Many of the f-electron systems exhibit the following temperature dependences of the electrical resistivity p, specific heat C, and magnetic susceptibility for T T₀, where T_o is a characteristic temperature: P(T) 1 –aT/T ₀, where a < 0 or > 0, C(T)/T (-1/T _o) In (T/bT ₀), and (T) 1 –c(T/T_o)^1/2. In several of the f-electron systems, the characteristic temperature T_o can be identified with the Kondo temperature T_k.     

Magnetic field dependence of zero-sound attenuation close to the pair-breaking edge in3He-B due toJ=1−,J z =±1 collective modes

Our previous theory yielded for the Zeeman splitting of the imaginaryJ=1 collective mode in³He-B the result =2+0.25J _z ( is the effective Larmor frequency). In this paper we take into account the downward shift of the pair-breaking edge from 2 to 2₂– (₂ and ₁ are the longitudinal and transverse gap parameters). This leads to a complex Landé factor: the frequencies of theJ _z =±1 components become =2+0.39J _z , and the linewidths of these resonances become finite: =0.18. The coupling amplitudes of theJ _z =±1 components to density are found to be proportional to gap distortion, (₁–₂/(/)². Our results for the ultrasonic attenuation due to theJ _z =±1,J=1 modes are capable of explaining the field dependence of the attenuation close to the pair-breaking edge as observed by Dobbs, Saunders, et al. The observed peak is caused by theJ _z =–1 component: its height increases due to gap distortion as the field is increased, and the peak shifts downward in temperature and its width increases with the field due to the complex Landé factor. TheJ _z =+1 component gives rise to a corresponding dip relative to the continuum attenuation.     

Electrical conductivity,thermoelectric power and dielectric constant of NiWO4

The a.c. electrical conductivity ( _ac), thermoelectric power () and dielectric constant () of antiferromagnetic NiWO₄ are presented. _ac and have been measured in the temperature range 300 to 1000 K and in the temperature range 600 to 1000 K. Conductivity data are interpreted in the light of band theory of solids. The compound obeys the exponential law of conductivity = ₀ exp (–W/kT). Activation energy has been estimated as 0.75eV. The conductivity result is summarized in the following equation =2.86 exp (–0.75 eV/kT)^–1 cm^–1 in the intrinsic region. The material is p-type below 660 K and above 950 K, and is n-type between 660 and 950 K.     

A superconducting vibrating reed applied to flux-line pinning. I. Theory

A theoretical treatment is given of a superconducting reed clamped at one end and performing flexural vibrations in a homogeneous longitudinal magnetic fieldB _a. When the flux lines are rigidly pinned the reed behaves like an ideal diamagnet whose bending distorts the external field. This generates a magnetic restoring force (line tension) B _a ² which is independent of the reed thicknessd, whereas the mechanical restoring force (stiffness) is d ³. Therefore, the resonance frequency /2 of a thin superconducting reed increases drastically when a fieldB _a is applied, or for a givenB _a, when the reed is cooled below its critical temperatureT _c. With decreasing pinning strength (characterized by Labusch's parameter ) the resonance frequency decreases, ²²– _pin ² where _pin ^{2 –1}, and an attenuation _v ^–2 occurs due to the viscous motion of flux lines. For larger vibration amplitudes an additional, amplitude-dependent damping _h ^–3 occurs due to the hysteretic losses caused by elastic instabilities during flux motion.On leave from Centro Atómico, Bariloche, Argentina.     

Effect of Gd3+ substitution on dielectric behaviour of copper-cadmium ferrites

The dielectric constant, , loss tangent (tan ) and a.c. resistivity (_a.c.) are measured in the frequency range of 100 Hz to 5 MHz for the series of samples Cd _x Cu_1–x Fe_2–y Gd _y O₄ prepared by the ceramic technique. The dispersion in for all the values of x and y=0 and 0.1 shows a normal behaviour except for y=0.1 and x=0.4. The lowering of dielectric intensity in substituted ferrites (y=0.1) and fast dispersion of (_a.c.) with frequency, are explained as due to the reduced number of Fe³⁺ participating in the polarization process and the hindrances caused by Gd³⁺ to the polarization process by localizing Fe²⁺ ions thereby increasing the resistivity and activation energy. The dispersion in tan for unsubstituted samples (y=0.0) shows a normal trend while substituted samples (y=0.1) show relaxation behaviour, which is explained by existing theories.     

Effect of the LIII Absorption Edge of Uranium on Chemical Shifts of the Lβ1 Line of Uranium in UO2+x

The effect of intraatomic absorption of the L₁ X-ray emission line of uranium was studied. To eliminate the effect of the L _{I I I} absorption edge on the chemical shift () of the L₁ line, the dependence of L₁ on the oxygen index x in oxide systems of variable composition UO_{2 + x} was determined indirectly. It was shown that, in the absence of the effect of the L _{I I I} absorption edge, the dependence of L₁ on x is ordinary and, as in the case of other hard emission lines of the uranium L series, can be described by a second-order polynomial. The abnormal dependence of L₁ on x is explained.     

Properties of Va metal-B films prepared by r.f.-sputtering

Ta_100-x B _x alloy films were prepared by r.f.-sputtering in the chemical composition range 45 x 77. Ta_100-x B _x (45 x 58) films consist of the amorphous phase, while the TaB₂ crystal phase was observed in Ta_100-x B _x (66 x 77) films. A remarkable preferred orientation with the (001) plane of TaB₂ parallel to the film surface was observed in Ta₃₄B₆₆. The d.c. electrical conductivity of Ta_100-x B _x (45 x 77) films decreases with increasing boron content in the range 6.7 × 10³ to 1.3 × 10^3–1 cm^–1. The micro-Vickers hardness of Ta_100-x B _x (45 x 77) films was in the range 2200 to 2600 kg mm^–2.     

Numerical calculation of a generalized thermal model of radio-electronic apparatus

A method is proposed for numerical calculation of the temperature field of a generalized model of electronic equipment with high component density.Notation x,y,z,x,y spatial coordinates, m - time, sec - L_x, L_v, L_z dimensions of heated zone, m - _x, _y, _z effective thermal-conductivity coefficients of heated zone, W/m·deg - ₂ thermal conductivity of chassis, W/m·deg - a _z thermal diffusivity of heated zone along z axis, m²/sec - c₁ effective specific heat of heated zone, J/kg·deg - ₁ effective density of heated zone, kg/m³ - c₃, ₃, c₂, ₂ thermophysical characteristics of cooling agent and chassis, J/kg·deg·kg/m³ - q_v(x, ), q(x, y) volume heat-source distribution, W/m³ - q_s (x) surface heat-source distribution, W/m² - p number of cooling agent channels - Fo Fourier number - Bi Biot number - Uⁱ coolant velocity in i-th channel, m/sec - T₁(x, ), T₂(x, ), T₃(x, ) temperature distribution of heated zone, chassis, and coolant, °K - T₃₀, T₁₀(x), T₂₀(x) initial temperatures, °K - T_3in coolant temperature at input to channel, °K - T_T(x) effective temperature distribution of heat loss elements, °K - T_C temperature of external medium, °K - dimensionless heated zone temperature - _v(x) local volume heat exchange coefficient, W/m³·deg - ₁₂(x), _1C(x), _1T(x) heat liberation coefficients - W/m²·sec; ₂₁(x, y), _2c(x, y), _2T(x, y) volume heat-exchange coefficients of chassis with heated zone, medium, and cooling elements, W/m³·deg Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 40, No. 5, pp. 876–882, May, 1981.     

Dielectric properties and microstructural behaviour of B-site calcium-doped barium titanate ceramics

Dielectric properties and microstructural behaviour of Ba_1–x Sr _x Ti_1–y Ca _y O_3–y ceramics, where strontium and calcium were doped on the barium and titanium sites, respectively, within the range 0x0.24 and 0y0.05, were investigated. Calcium addition decreased the tetragonality,c/a, increased the unit cell volume, and lowered the Curie temperature, which were all attributed to the occupancy of Ca²⁺ ions on titanium sites. When sintered at a low oxygen partial pressure of 10^–9 MPa, a resistivity higher than 10¹¹ cm was maintained for the formulations containing B-site calcium substitution more than 0.5 mol %. With increasing the amount of calcium addition, the Curie peak was depressed and completely broadened for the compositions with calcium addition more than 3 mol %, where the average grain size was smaller than 1 m. Co-firing with nickel electrodes in a reducing atmosphere also depressed the Curie peak and inhibited the grain growth due to the diffusion of nickel into the dielectrics.     

Synthesis and characterization of silicon nitride whiskers

Silicon nitride whiskers were synthesized by the carbothermal reduction of silica under nitrogen gas flow. The formation of silicon nitride whiskers occurs through a gas-phase reaction, 3SiO(g)+3CO(g)+2N₂(g)=Si₃N₄()+3CO₂(g), and the VS mechanism. The generation of SiO gas was enhanced by the application of a halide bath. Various nitrogen flow rates resulted in different whisker yields and morphologies. A suitable gas composition range of N₂, SiO and O₂ is necessary to make silicon nitride stable and grow in a whisker form. The oxygen partial pressure of the gas phase was measured by an oxygen sensor and the gas phase was analysed for CO/CO₂ by gas chromatography. Silicon nitride was first formed as a granule, typically a polycrystalline, and then grown as a single crystal whisker from the {1 0 0} plane of the granule along the 210 direction. The whiskers were identified as-sialon with Z value ranging from 0.8 to 1.1, determined by lattice parameter measurements.