Influence of isovalent and heterovalent substitution for Bi<Superscript>3+</Superscript> and Fe<Superscript>3+</Superscript> on the properties of Bi<Subscript>2</Subscript>Fe<Subscript>4</Subscript>O<Subscript>9</Subscript>-based solid solutions

Bi_2–хLa_хFe₄O₉ and Bi₂Fe_4–2xTi_xCo_xO₉ ferrites have been prepared by solid-state reactions at a temperature of 1073 K. X-ray diffraction data indicate that, in the Bi_2–хLa_хFe₄O₉ system, the limiting degree of La³⁺ substitution for Bi³⁺ ions in Bi₂Fe₄O₉ does not exceed 0.05 and that the limiting degree of substitution in the Bi₂Fe_4–2xTi_xCo_xO₉ system lies in the range 0.05 < x < 0.1. The specific magnetization and specific magnetic susceptibility of the samples have been measured at temperatures from 5 to 300 K in a magnetic field of 0.86 T. The field dependences of magnetization obtained for the Bi_2–хLa_хFe₄O₉ and Bi₂Fe_4–2xTi_xCo_xO₉ ferrites at temperatures of 300 and 5 K demonstrate that partial isovalent substitution of La³⁺ for Bi³⁺ ions in Bi₂Fe₄O₉ and heterovalent substitution of Ti⁴⁺ and Co²⁺ ions for two Fe³⁺ ions leads to partial breakdown of the antiferromagnetic state and nucleation of a ferromagnetic state.     

Magnetic and ferroelectric properties of SmBi<Subscript>4</Subscript>Fe<Subscript>0.5</Subscript>Co<Subscript>0.5</Subscript>Ti<Subscript>3</Subscript>O<Subscript>15</Subscript> compounds prepared with different synthesis methods

The SmBi₄Fe_0.5Co_0.5Ti₃O₁₅ compounds were prepared by the insertion of the SmFe_0.5Co_0.5O₃ into the Bi₄Ti₃O₁₂ host and the conventional solid state reaction method, respectively. X-ray diffraction analysis indicates that the conventional solid state reaction method favors the formation of a single phase four-layer Aurivillius phase of SmBi₄Fe_0.5Co_0.5Ti₃O₁₅ more easily than that prepared by the insertion method. Magnetic and ferroelectric measurements demonstrate that the samples prepared by both methods exhibit coexistence of strong ferromagnetic and weak ferroelectric behaviors at room temperature. Compared with the Bi₅FeTi₃O₁₅, the ferromagnetism of the SmBi₄Fe_0.5Co_0.5Ti₃O₁₅ was dramatically enhanced by the partial substitution of Co for Fe and Sm for Bi. The SmBi₄Fe_0.5Co_0.5Ti₃O₁₅ samples exhibit large magnetic responses (2M _r ?~?643 memu/g and coercive fields 2H _c ?~?344 Oe) at room temperature.     

Structure and electrical properties of MnO doped (Ba<Subscript>0.96</Subscript>Ca<Subscript>0.04</Subscript>)(Ti<Subscript>0.92</Subscript>Sn<Subscript>0.08</Subscript>)O<Subscript>3</Subscript> lead free ceramics

In this work, (Ba_0.96Ca_0.04)(Ti_0.92Sn_0.08)O₃–xmol MnO (BCTS–xMn) lead-free piezoelectric ceramics were fabricated by the conventional solid-state technique. The composition dependence (0 ≤ x ≤ 3.0 %) of the microstructure, phase structure, and electrical properties was systematically investigated. An O–T phase structure was obtained in all ceramics, and the sintering behavior of the BCTS ceramics was gradually improved by doping MnO content. In addition, the relationship between poling temperature and piezoelectric activity was discussed. The ceramics with x = 1.5 % sintering at temperature of 1330 °C demonstrated an optimum electrical behavior: d ₃₃ ~ 475 pC/N, k _p ~ 50 %, ε _r ~ 4060, tanδ ~ 0.4 %, P _r ~ 10.3 μC/cm², E _c ~ 1.35 kV/mm, T _C ~ 82 °C, strain ~0.114 % and \(d_{33}^{*}\) ~ 525 pm/V. As a result, we achieved a preferable electric performance in BaTiO₃-based ceramics with lower sintering temperature, suggesting that the BCTS–xMn material system is a promising candidate for lead-free piezoelectric ceramics.     

Effect of Bi and Sr doping on morphological and magnetic properties of LaCo<Subscript>0.6</Subscript>Fe<Subscript>0.4</Subscript>O<Subscript>3</Subscript> nanosized perovskites

Nanopowders of La _1?x Bi _x Co_0.6Fe_0.4O₃ (x = 0, 0.1, 0.2) and La _1?2x Bi _x Sr _x Co_0.6Fe_0.4O₃ (x = 0.1) multinary perovskites were synthesized by citrate sol–gel autocombustion method. Crystalline phase and the lattice parameters were obtained from X-ray diffraction pattern. The XRD result shows that all compounds have rhombhohedral crystal structure with \(\bar {\mathbf {R}\mathbf {3}}\)c space group and Bi (x = 0.2) have the presence of secondary peaks. Crystallite size, dislocation density, specific area and strain were calculated from XRD. The elemental composition and micrographs of grain were obtained from EDAX (energy dispersive X-ray analysis) and SEM (scanning electron microscopy), with an average grain size below 400 nm. Surface morphological studies using XPS (X-ray photoelectron spectroscopy) were used to find out the chemical states and surface proportion of oxygen present in samples. Finally, using the vibrating sample magnetometer the room temperature magnetic behaviour of compounds was studied and it was observed that the ferromagnetic behaviour of LaCo_0.6Fe_0.4O₃ was reduced by Bi and Sr doping.     

Very high thermal stability with excellent dielectric,and non-ohmics properties of Mg-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4.2</Subscript>O<Subscript>12</Subscript> ceramics

In this work, the nominal CaCu_3?xMg_xTi_4.2O₁₂ (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very low loss tangent (tanδ)?<?0.009–0.014 and giant dielectric constant (ε′) ～?1.1?×?10⁴–1.8?×?10⁴ with excellent temperature coefficient (Δε′) less than ±?15% in a temperature range of ??60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased with increasing Mg²⁺ dopants due to the increase of grain boundary resistance (R_gb) caused by the very high density of grain, resulting from the substitution of small ionic radius Mg²⁺ dopants in the structure. In addition, CaCu_3?xMg_xTi_4.2O₁₂ ceramics displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α) and a breakdown field (E_b) due to Mg²⁺doping. The high values of ε′ (14012), α (13.64) and E_b (5977.02 V/cm) with very low tanδ value (0.009) were obtained in a CaCu_2.90Mg_0.10Ti_4.2O₁₂ ceramic sintered at 1100 °C for 8 h.     

Synthesis of anisotropic NaNbO<Subscript>3</Subscript> seed crystals and fabrication of textured (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript>-based ceramics

High aspect ratio patelike NaNbO₃ particles with pure perovskite structure have been successfully synthesized by topochemical microcrystal conversion (TMC) from plate-like precursor particles of the layer-structured Bi_2.5Na_3.5Nb₅O₁₈. By changing the Bi_2.5Na_3.5Nb₅O₁₈/Na₂CO₃ ratio, large and thin NaNbO₃ particles with a thickness of approximately 0.5 μm and a width of approximately 20 μm were obtained. The obtained NaNbO₃ particles is quite suitable for fabricating textured (K_0.5Na_0.5)NbO₃-based ceramics. Using the fine platelike NaNbO₃ particles as templates, dense <001> -oriented (K_0.5Na_0.5)NbO₃-0.5 mol %MnO₂ ceramics with high texture quality (Lotgering factor F ₀₀₁ = 87 %) and excellent piezoelectric properties were produced by templated grain growth. Compared with randomly oriented ceramics, textured samples show greatly enhanced properties. The room-temperature strain S, the piezoelectric coefficient d ₃₃ ^* and d ₃₃ reach up to 0.093 %, 233 pm/V and 195pC/N, respectively, which are all about 1.5 times larger than those of non-textured ceramics.     

Low temperature sintering and microwave dielectric properties of Li<Subscript>6</Subscript>Mg<Subscript>7</Subscript>Ti<Subscript>3</Subscript>O<Subscript>16</Subscript> ceramics with LiF additive for LTCC applications

Li₆Mg₇Ti₃O₁₆ ceramics were prepared by the conventional solid-state method with 1–5 wt% LiF as the sintering aid. Effects of LiF additions on the phase compositions, sintering characteristics, micro-structures and microwave dielectric properties of Li₆Mg₇Ti₃O₁₆ ceramics were investigated. The LiF addition could effectively lower the sintering temperature of Li₆Mg₇Ti₃O₁₆ ceramics from 1550 to 900 °C. For different LiF-doped compositions, the optimum dielectric permittivity (ε _r ) and quality factor (Q·f) values first increased and then decreased with the increase of LiF contents, whereas the temperature coefficient of resonant frequency (τ _f ) fluctuated between ??14.39 and ??8.21 ppm/°C. Typically, Li₆Mg₇Ti₃O₁₆ ceramics with 4 wt% LiF sintered at 900 °C exhibited excellent microwave dielectric properties of ε _r ?=?16.17, Q·f?=?80,921 GHz and τ _f ?=???8.21 ppm/°C, which are promising materials for the low temperature co-fired ceramics applications.     

Diffusion phase transition and impedance spectroscopy of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>/CuO co-doped BCZT lead-free ceramics

Perovskite type (Ba_0.85Ca_0.15?2x Bi_2x )(Zr_0.1Ti_0.9?x Cu _x )O₃ lead-free ceramics were prepared via a conventional solid-state reaction method. The phase structure, dielectric, ferroelectric properties and complex impedance were investigated in detail. XRD and dielectric measurements determined that single orthorhombic phase displayed in (Ba_0.85Ca_0.15)(Zr_0.1Ti_0.9)O₃ at room temperature. With the introduction of Bi₂O₃/CuO, the phase structure exhibited the mixture of orthorhombic and tetragonal phases, and then turned to single tetragonal phase. In contrast to the sharp dielectric transition of (Ba_0.85Ca_0.15)(Zr_0.1Ti_0.9)O₃ ceramics, a broad dielectric peak coupled with a slight decrease in Curie temperature was observed in (Ba_0.85Ca_0.15?2x Bi_2x )(Zr_0.1Ti_0.9?x Cu _x )O₃ ceramics with increasing x. The observed diffuse phase transition behavior was further confirmed by a couple of measurements with polarization loops and polarization current density curves. The structural and the composition fluctuations induced by ions doping should be responsible for the diffuse phase transition behavior. Furthermore, physical mechanisms of the conduction and relaxation processes were revealed by using impedance spectroscopy analyses. It was concluded that the conduction and relaxation processes were thermally activated, which was closely linked with the singly and doubly ionized oxygen vacancies.     

Scaling behavior of dynamic hysteresis in Bi<Subscript>3.15</Subscript>Nd<Subscript>0.85</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ceramics

The scaling behavior of dynamic hysteresis was investigated in Bi_3.15Nd_0.85Ti₃O₁₂ bulk ceramics at a frequency of 1–1000 Hz and an external electric field amplitude of 79–221 kV/cm. The scaling behavior at low amplitude (E ₀ ≤ 114 kV/cm) takes the form of \(\langle A \rangle \propto f^{ - 0.013} E_{0}^{0.7}\) for low frequency (f ≤ 200 Hz) and \(\langle A \rangle \propto f^{ - 0.013} E_{0}^{0.22}\) for high frequency (f > 200 Hz), where \(\langle A \rangle\) is the area of hysteresis loop and f and E ₀ are frequency and amplitude of external electric field, respectively. At high amplitude (E ₀ > 114 kV/cm), we obtain \(\langle A \rangle \propto f^{0.011} E_{0}^{1.163}\) at low frequency and \(\langle A \rangle \propto f^{ - 0.015} E_{0}^{0.7}\) at high frequency. At low E ₀, the contribution to the scaling relation mainly results from reversible domain switching, while at high E ₀ reversible and irreversible domain switching concurrently contribute to the scaling relation.     

Effects of Ge<Superscript>4+</Superscript> acceptor dopant on sintering and electrical properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript> lead-free piezoceramics

Lead-free (K_0.5Na_0.5)(Nb_1-xGe _x )O₃ (KNN-xGe, where x = 0-0.01) piezoelectric ceramics were prepared by conventional ceramic processing. The effects of Ge⁴⁺ cation doping on the phase compositions, microstructure and electrical properties of KNN ceramics were studied. SEM images show that Ge⁴⁺ cation doping improved the sintering and promoted the grain growth of the KNN ceramics. Dielectric and ferroelectric measurements proved that Ge⁴⁺ cations substituted Nb⁵⁺ ions as acceptors, and the Curie temperature (T_C) shows an almost linear decrease with increasing the Ge⁴⁺ content. Combining this result with microstructure observations and electrical measurements, it is concluded that the optimal sintering temperature for KNN-xGe ceramics was 1020°C. Ge⁴⁺ doping less than 0.4 mol.%can improve the compositional homogeneity and piezoelectric properties of KNN ceramics. The KNN-xGe ceramics with x = 0.2% exhibited the best piezoelectric properties: piezoelectric constant d₃₃ = 120 pC/N, planar electromechanical coupling coefficient k_p = 34.7%, mechanical quality factor Q_m = 130, and tanδ = 3.6%.     

Structural studies of a new electroceramic composite: Pb(Fe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>)O<Subscript>3</Subscript> (PFN)-Cr<Subscript>0.75</Subscript>Fe<Subscript>1.25</Subscript>O<Subscript>3</Subscript>(CRFO)

A study of the structural characteristics of the composites [Pb(Fe_0.5Nb_0.5)O₃(PFN)] _x -[Cr_0.75Fe_1.25O₃(CRFO)]_100?x (x = 0 (CRFO100), 10, 50, 90, 100) was performed in this work. The compounds PFN100 and CRFO100 were prepared by conventional solid-state method and investigated by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and ⁵⁷Fe Mössbauer Spectroscopy techniques. The X-ray analysis shows that PFN100 is tetragonal and the CRFO100 phase has a trigonal symmetry. The refinement of all the composites was also performed and discussed in this paper. The Mössbauer spectrum for the composite samples shows a paramagnetic doublet and a sextet probably assigned to a magnetic phase associated to Fe⁺³. For the sample PFN100, only a magnetic field of 49.5 T (isomer shift (δ) = 0.21 mm/s) was detected. For the composite sample, the δ and Δ are typical of Fe ions at sites of octahedral coordination.     

Low temperature sintering and dielectric properties of Ba<Subscript>3</Subscript>(VO<Subscript>4</Subscript>)<Subscript>2</Subscript> microwave ceramics using Co<Subscript>2</Subscript>O<Subscript>3</Subscript> additives

The Ba₃(VO₄)₂–x wt% Co₂O₃ (x?=?0.5–5) ceramics were prepared by the solid state reaction method in order to reduce the sintering temperature. The effects of the Co₂O₃ additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of Ba₃(VO₄)₂ ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. As a result, the Q?×?f value of 54,000 GH, the ε _r of 14.6 and the τ_f value of +58.5 ppm/°C were obtained in the sample of the Ba₃(VO₄)₂–3 wt% Co₂O₃ ceramic sintered at the temperature of 925 °C, which is capable to co-fire with electrode metal of high conductivity such as Ag (961 °C). Moreover, the Q?×?f values of the sample with Co₂O₃ higher than that of 3 wt% additions decreased because of the formation of Ba₂V₂O₇ phase.     

The magnetic properties of BiY<Subscript>2</Subscript>Fe<Subscript>5</Subscript>O<Subscript>12</Subscript> nanoparticles doped with Cr ions

BiY₂Cr _x Fe_5?x O₁₂ (x = 0, 0.05, 0.1, 0.2, 0.3) nanocrystals were synthesized by using a sol-gel method. Samples were characterized by the powder X-ray diffraction (XRD), the thermal gravity analysis (TGA) and the differential thermal analysis (DTA), the vibrating sample magnetometer(VSM) and Mössbauer spectrums. The average sizes of the particles were determined by the Scherrer’s formula. The special Ms and Mössbauer spectra of BiY₂Cr _x Fe_5?x O₁₂ nanocrystals are researched at room temperature. It is seen that the special Mss of samples are initially increased with increasing Cr³⁺ content (x < 0.1), and decreased with increasing content of Cr³⁺ ions (x > 0.1).     

Effect of Ho-doping on structural,electrical and magnetic properties of La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> ceramics prepared by Plasma-Activated Sintering

Different components of La_0.7?x Ho _x Sr_0.3MnO₃ (LHSMO, x = 0, 0.1, 0.2, 0.3) ceramics were fabricated by Plasma-Activated Sintering (PAS), so as to study the correlation between the contents of Ho³⁺ and the structural, electrical, magnetic properties. XRD and SEM confirmed that LHSMO ceramics prepared by PAS exhibited high-purity phase and dense microstructure. The measurement of electrical resistivity showed that the resistivity of LHSMO ceramics increased, and the metal–insulator transition temperature decreased with the increasing Ho-doping content. The resistivity data were then fitted using various empirical equations, and the conduction mechanism of LHSMO ceramics was found to be in accord with the electron–magnon scattering process in the low-temperature region and the small polaron hopping model in the high-temperature region. Lastly, we calculated the values of magnetoresistance of the LHSMO ceramics, which increased with increasing Ho-doping content, from 3.5% for x = 0 to 14.6% for x = 0.3. Therefore, the doping of Ho³⁺ into La_0.7Sr_0.3MnO₃ can effectively enhance the low-field magnetoresistance effect.     

Dielectric responses of Na<Subscript>0.65</Subscript>Bi<Subscript>0.45</Subscript>Cu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> ceramics based on the composition design of changing the Na/Bi ratio

Na_0.65Bi_0.45Cu₃Ti₄O₁₂ ceramics were successful prepared by the conventional solid-state reaction technique. Compared to Na_0.50Bi_0.50Cu₃Ti₄O₁₂ (NBCTO), the composition of Na_0.65Bi_0.45Cu₃Ti₄O₁₂ was designed in terms of changing the Na/Bi ratio. Colossal dielectric permittivity of ~1.2 × 10⁴ at 1 kHz was obtained in Na_0.65Bi_0.45Cu₃Ti₄O₁₂ ceramics. Interestingly, three frequency dispersions were observed in the frequency dependence of dielectric constant measured at different temperatures. The investigation of electric modulus displayed that the giant low-frequency dielectric constant was attributed to Maxwell–Wagner polarization at the grain boundaries and the frequency dispersion in middle-frequency range was due to the grain polarization. Except grain response and grain boundaries response reflected by two semicircles in the impedance spectroscopy, another electrical response associated with nonzero high frequency intercept was found. The grain resistance Rg and grain boundaries resistance R _gb was ~600 Ω and 3.9 × 10⁵ Ω, respectively. The large intrinsic permittivity as high as ~700 was obtained. Furthermore, two dielectric anomalies observed in the temperature dependent of dielectric constant were discussed in detail. The results indicated change in the Na/Bi ratio had a significant effect on the electrical properties of NBCTO ceramics.     

Crystal structure,microstructure and microwave dielectric properties of novel MgAl<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>10</Subscript> ceramic

In the present work, a novel MgAl₂Ti₃O₁₀ ceramic was obtained using a traditional solid-state reaction method. X-ray diffraction and energy dispersive spectrometer showed that the main MgAl₂Ti₃O₁₀ phase was formed after sintered at 1300–1450 °C. With rising the sintering temperature from 1300 to 1450 °C, the bulk density (ρ), relative permittivity (ε _r ) and Q?×?f value firstly increased, reached the maximum values (3.61 g/cm³, 14.9, and 26,450 GHz) and then decreased. The temperature coefficient of resonator frequency (τ _f ) showed a slight change at a negative range of ??94.6 to ??83.7 ppm/°C. When the sintering temperature was 1400 °C, MgAl₂Ti₃O₁₀ ceramics exhibited the best microwave dielectric properties with Q?×?f?=?26,450 GHz, ε _r ?=?14.9 and τ _f ?=???83.7 ppm/°C.     

Enhancing the microwave dielectric properties of Sr<Subscript>2</Subscript>Ca<Subscript>3</Subscript>Ta<Subscript>4</Subscript>TiO<Subscript>17</Subscript> ceramics by Zr Substitution

The compositions in Sr₂Ca₃Ta₄Ti_1?xZr_xO₁₇ (0?≤?x?≤?0.12) series were designed and fabricated by solid state sintering method. All the compositions formed single phases and crystallized in an orthorhombic crystal structure. Zr substitution led to the enhancing of the microwave dielectric properties by tuning the τ_f value through zero and increased the Q_uf_o value from 12,540 to 14,970 GHz with a slight decrease in ε_r. In the present study, a good combination of ε_r ~?51, Q_uf_o ~?145,43 GHz and τ_f ~ 3 ppm/°C were obtained for Sr₂Ca₃Ta₄Ti_0.90Zr_0.1O₁₇ ceramic sintered at 1575 °C for 4 h.     

Ultralow thermal conductivity of cerium-doped Nd<Subscript>2</Subscript>Zr<Subscript>2</Subscript>O<Subscript>7</Subscript> over a wide doping range

In this paper, we report an ultralow thermal conductivity and a high-temperature phase stability of the (Nd_1?x Ce _x )₂Zr₂O_7+x system over the temperature range from room temperature to 1600 °C and over a wide composition range (0.2 ≤ x ≤ 0.8), and the (Nd_1?x Ce _x )₂Zr₂O_7+x system is therefore considered a strong candidate material for the fabrication of next-generation high-temperature thermal barrier coatings. The observed thermal conductivities (0.65–1.0 W/mK) are about 60–40% lower than those of undoped Nd₂Zr₂O₇ over the same temperature range (100–700 °C) and indicate a glass-like behavior. For comparison, the variation in the thermal conductivity with the temperature of the (Gd_1?x Ce _x )₂Zr₂O_7+x system with similar point defects was also measured, and the observed behavior was almost the same as that of undoped Gd₂Zr₂O₇ and was mostly determined by phonon–phonon scattering (λ ∝ 1/T). The effect of point defect scattering and strong phonon scattering sources (rattlers) on the thermal conductivity is also discussed in this paper. The results of this study suggest that the ultralow thermal conductivity of (Nd_1?x Ce _x )₂Zr₂O_7+x can be attributed to the presence of rattlers because of the large difference between the ionic radii of the Nd³⁺ and Ce⁴⁺ ions.     

Effects of NiNb<Subscript>2</Subscript>O<Subscript>6</Subscript> doping on dielectric property,microstructure and energy storage behavior of Sr<Subscript>0.97</Subscript>La<Subscript>0.02</Subscript>TiO<Subscript>3</Subscript> ceramics

Sr_0.97La_0.02TiO₃ ceramics with samll amounts of NiNb₂O₆ additives were prepared by the traditional solid state sintering method, and the phase purity, microstructure, dielectric properties and energy storage behavior of the NiNb₂O₆-added Sr_0.97La_0.02TiO₃ ceramics were investigated. The results show that the grain size of the ceramics firstly decreases and then increases with increasing NiNb₂O₆ concentration. The average grain size reaches 0.55 um for the sample with 4.5 wt% NiNb₂O₆. Moreover, impedance spectroscopy (IS) analysis was employed to study the electrical conductive behavior of NiNb₂O₆-doped Sr_0.97La_0.02TiO₃ ceramics. IS results reveale that the NiNb₂O₆-doped Sr_0.97La_0.02TiO₃ ceramic has large R _gb /(R _gb  + R _g ) ratios due to the decreased grain sizes. The breakdown strength is notably improved, and the highest breakdown strength of 324 kV/cm can be achieved for the sample with 4.5 wt% NiNb₂O₆ additive. The Sr_0.97La_0.02TiO₃ sample with 4.5 wt% NiNb₂O₆ possesses the maximum theoretical energy density of 1.36 J/cm³, which is about 2 times higher than that of pure SrTiO₃ in the literature. And its energy storage efficiency reaches 91.4 % under applied electric field of 80 kV/cm. This study provides the NiNb₂O₆ added ceramic as an attractive candidate for making high-energy density capacitors.     

Effects of sintering temperature on the properties of Mn/Y codoped Ba<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>TiO<Subscript>3</Subscript> ceramics for tunable application

(Ba_0.67Sr_0.33)_1?3x/2Y _x Ti_1?y/2Mn _y O₃ [BST(Mn + Y), x = 0.006, y = 0.005] ceramics were fabricated by using citrate–nitrate combustion derived powder. Microstructure and dielectric properties of the BST(Mn + Y) ceramic samples were investigated within the sintering temperature ranged from 1220 to 1300 °C. Sintering temperature has a great influence on the microstructure and electrical properties of the ceramic samples. The dielectric properties, ferroelectric properties, and tunability are enhanced by optimizing sintering temperature. The relatively high tunability of 40 % (1.5 kV/mm DC field, 10 kHz) was obtained, and relatively low dielectric loss, <0.0052 (at 10 kHz, 20 °C) was acquired for BST(Mn + Y) samples sintered at 1275 °C for 3 h. Both the low dielectric loss and enhanced tunable properties of BST(Mn + Y) are useful for tunable devices application.