Influence of Nd doping on microwave dielectric properties of SrTiO<Subscript>3</Subscript> ceramics

Sr_1?x Nd _x TiO₃ (x?=?0.08–0.14) ceramics were prepared by conventional solid-state methods. The analysis of crystal structure suggested Sr_1?x Nd _x TiO₃ ceramics appeared to form tetragonal perovskite structure. The relationship between charge compensation mechanism, microstructure feature and microwave dielectric properties were investigated. Trivalent Nd³⁺ substituting Sr²⁺ could effectively decrease oxygen vacancies. This reduction and relative density were critical to improve Q?×?f values of Sr_1?x Nd _x TiO₃ ceramics. For ε _r values, incorporation of Nd could restrain the rattling of Ti⁴⁺ cations and led to the reduction of dielectric constant. The τ _f values were strongly influenced by tilting of oxygen octahedral. The τ _f values decreased from 883 to 650 ppm/°C with x increasing from 0.08 to 0.14. A better microwave dielectric property was achieved for composition Sr_0.92Nd_0.08TiO₃ at 1460 °C: ε _r ?=?160, Q?×?f?=?6602 GHz, τ _f ?=?883 ppm/°C.     

Structure and electrical properties of MnO doped (Ba<Subscript>0.96</Subscript>Ca<Subscript>0.04</Subscript>)(Ti<Subscript>0.92</Subscript>Sn<Subscript>0.08</Subscript>)O<Subscript>3</Subscript> lead free ceramics

In this work, (Ba_0.96Ca_0.04)(Ti_0.92Sn_0.08)O₃–xmol MnO (BCTS–xMn) lead-free piezoelectric ceramics were fabricated by the conventional solid-state technique. The composition dependence (0 ≤ x ≤ 3.0 %) of the microstructure, phase structure, and electrical properties was systematically investigated. An O–T phase structure was obtained in all ceramics, and the sintering behavior of the BCTS ceramics was gradually improved by doping MnO content. In addition, the relationship between poling temperature and piezoelectric activity was discussed. The ceramics with x = 1.5 % sintering at temperature of 1330 °C demonstrated an optimum electrical behavior: d ₃₃ ~ 475 pC/N, k _p ~ 50 %, ε _r ~ 4060, tanδ ~ 0.4 %, P _r ~ 10.3 μC/cm², E _c ~ 1.35 kV/mm, T _C ~ 82 °C, strain ~0.114 % and \(d_{33}^{*}\) ~ 525 pm/V. As a result, we achieved a preferable electric performance in BaTiO₃-based ceramics with lower sintering temperature, suggesting that the BCTS–xMn material system is a promising candidate for lead-free piezoelectric ceramics.     

Inducement of Itinerant Electron Transport in Charge-Ordered Pr<Subscript>0.6</Subscript>Ca<Subscript>0.4</Subscript>MnO<Subscript>3</Subscript> by Ba Doping

The effects of Ba ²⁺ doping on the electrical and magnetic properties of charge-ordered Pr_0.6Ca_0.4MnO₃ were investigated through electrical resistivity and AC susceptibility measurements. X-ray diffraction data analysis showed an increase in unit cell volume with increasing Ba ²⁺ content indicating the possibility of substituting Ba ²⁺ for the Ca-site. Electrical resistivity measurements showed insulating behavior and a resistivity anomaly at around 220 K. This anomaly is attributed to the existence of charge ordering transition temperature, \(T^{\mathrm {R}}_{\text {CO}}\) for the x = 0 sample. The Ba-substituted samples exhibited metallic to insulator transition (MI) behavior, with transition temperature, T _MI, increasing from ～98 K (x = 0.1) to ～122 K (x = 0.3). AC susceptibility measurements showed ferromagnetic to paramagnetic (FM-PM) transition for Ba-substituted samples with FM-PM transition temperature, T _c, increasing from ～121 K (x = 0.1) to ～170 K (x = 0.3), while for x = 0, an antiferromagnetic to paramagnetic transition behavior with transition temperature, T _N, ～170 K was observed. In addition, inverse susceptibility versus T plot showed a deviation from the Curie–Weiss behavior above T _c, indicating the existence of the Griffiths phase with deviation temperature, T _G, increasing from 160 K (x = 0.1) to 206 K (x = 0.3). Magnetoresistance, MR, behavior indicates intrinsic MR mechanism for x = 0.1 which changed to extrinsic MR for x > 0.2 as a result of Ba substitution. The weakening of charge ordering and inducement of ferromagnetic metallic (FMM) state as well as increase in both T _c and T _MI are suggested to be related to the increase of tolerance factor, τ, and increase of e _g ?electron bandwidth as average ionic radius at A-site, <r _A> increased with Ba substitution. The substitution may have reduced MnO₆ octahedral distortion and changed the Mn–O–Mn angle which, in turn, promotes itinerancy of charge carrier and enhanced double exchange mechanism. On the other hand, increase in A-site disorder, which is indicated by the increase in σ ² is suggested to be responsible for the widening of the difference between T _c and T _MI.     

Influence of silver addition on microstructures and transport properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>:Ag<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> composites

In order to obtain high temperature coefficient of resistance (TCR) value of La_0.67Ca_0.33MnO₃:Ag _x (LCMO:Ag _x ) composites, samples with different Ag contents (x?=?0, 0.1, 0.2, 0.25, 0.3, and 0.5) were prepared by sol–gel method. X-ray diffraction analyses indicated that all samples had orthorhombic perovskite structures. As x increased, lattice parameters (a, b, c) and cell volumes underwent slight expansions. Interestingly, the addition of Ag dramatically affected TCR and magneto-resistance (MR) values. Elevated TCR value up to 53.46%·K^?1 at 277 K was observed for LCMO:Ag _x composites with added Ag at the composition of x?=?0.1. Meanwhile, MR value at 263 K reached 71% at the magnetic field of 1 T for samples with Ag composition of x?=?0.25. The increase in Mn⁴⁺/Mn³⁺ ratio and improvement in crystallization caused by added Ag was found responsible for the elevated values of TCR, MR, and T_p. These findings may have practical use in high-performance magneto-resistive manganites.     

Effect of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> addition on the microstructure and electrical properties of LaMnO<Subscript>3</Subscript>-based NTC thermistors

A study to develop a new system of negative temperature coefficient thermistors for wide temperature range, A series of Mn-based perovskite-structured ceramics of composition (LaMn_1?x Al _x O₃)_0.9(Al₂O₃)_0.1 has been synthesized by conventional solid state reaction at 1350?°C. The X-ray diffraction patterns showed that for all the samples, the substitution of manganese by aluminum up to x?=?0.1 preserved the rhombohedral perovskite LaMnO₃-like phase. For x?=?0.2, apart from the LaMnO₃-like structure, a second perovskite phase based on the cubic LaAlO₃ structure was formed. For x?=?0.3 and 0.4, the phase present was LaAlO₃ -type structure. The grain sizes of the sintered body detected by scanning electron microscope were decreased with increasing Al₂O₃ content. The resistivity increases with increasing the Al content. The obtained values of ρ _25?°C and B _25/50 and E _a are in the range of 10–13103 Ω cm, 1813–2794 K, 0.156–0.241 eV, respectively. The resistance variation (ΔR/R) was <0.241% and the minimum value (0.0483%) was obtained for aging at 125?°C at 500 h. The aim of this work was explored new composite ceramics materials, which could be used as potential candidates for wide temperature range from ?100 to 500?°C thermistors applications.     

Very high thermal stability with excellent dielectric,and non-ohmics properties of Mg-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4.2</Subscript>O<Subscript>12</Subscript> ceramics

In this work, the nominal CaCu_3?xMg_xTi_4.2O₁₂ (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very low loss tangent (tanδ)?<?0.009–0.014 and giant dielectric constant (ε′) ～?1.1?×?10⁴–1.8?×?10⁴ with excellent temperature coefficient (Δε′) less than ±?15% in a temperature range of ??60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased with increasing Mg²⁺ dopants due to the increase of grain boundary resistance (R_gb) caused by the very high density of grain, resulting from the substitution of small ionic radius Mg²⁺ dopants in the structure. In addition, CaCu_3?xMg_xTi_4.2O₁₂ ceramics displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α) and a breakdown field (E_b) due to Mg²⁺doping. The high values of ε′ (14012), α (13.64) and E_b (5977.02 V/cm) with very low tanδ value (0.009) were obtained in a CaCu_2.90Mg_0.10Ti_4.2O₁₂ ceramic sintered at 1100 °C for 8 h.     

The magnetic properties of BiY<Subscript>2</Subscript>Fe<Subscript>5</Subscript>O<Subscript>12</Subscript> nanoparticles doped with Cr ions

BiY₂Cr _x Fe_5?x O₁₂ (x = 0, 0.05, 0.1, 0.2, 0.3) nanocrystals were synthesized by using a sol-gel method. Samples were characterized by the powder X-ray diffraction (XRD), the thermal gravity analysis (TGA) and the differential thermal analysis (DTA), the vibrating sample magnetometer(VSM) and Mössbauer spectrums. The average sizes of the particles were determined by the Scherrer’s formula. The special Ms and Mössbauer spectra of BiY₂Cr _x Fe_5?x O₁₂ nanocrystals are researched at room temperature. It is seen that the special Mss of samples are initially increased with increasing Cr³⁺ content (x < 0.1), and decreased with increasing content of Cr³⁺ ions (x > 0.1).     

Magnetic and Electrical Properties Induced by the Substitution of Divalent by Monovalent in the La<Subscript>0.6</Subscript>Ca<Subscript>0.4</Subscript>MnO<Subscript>3</Subscript> Compound

The La_0.6Ca_0.4?x Ag _x MnO₃ samples with x = 0 and 0.10 were prepared by sol–gel methods. Structural and electrical measurements were performed to examine the effect of the silver substitution in the calcium sites on the physical properties. Magnetization versus temperature studies have shown that all samples exhibit a magnetic transition from ferromagnetic to paramagnetic phase when temperature is increased. The second transition in the resistivity in the La_0.6Ca_0.4MnO₃ compound can be attributed to an abnormality characteristic of charge ordering (CO) effect. The electrical resistivity was described by a phenomenological percolation model. Ten percent of Ag substitution in the Ca site exhibits a magnetoresistance value about 75 % near room temperature at the applied magnetic field of 8 T.     

Effects of sintering temperature on the properties of Mn/Y codoped Ba<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>TiO<Subscript>3</Subscript> ceramics for tunable application

(Ba_0.67Sr_0.33)_1?3x/2Y _x Ti_1?y/2Mn _y O₃ [BST(Mn + Y), x = 0.006, y = 0.005] ceramics were fabricated by using citrate–nitrate combustion derived powder. Microstructure and dielectric properties of the BST(Mn + Y) ceramic samples were investigated within the sintering temperature ranged from 1220 to 1300 °C. Sintering temperature has a great influence on the microstructure and electrical properties of the ceramic samples. The dielectric properties, ferroelectric properties, and tunability are enhanced by optimizing sintering temperature. The relatively high tunability of 40 % (1.5 kV/mm DC field, 10 kHz) was obtained, and relatively low dielectric loss, <0.0052 (at 10 kHz, 20 °C) was acquired for BST(Mn + Y) samples sintered at 1275 °C for 3 h. Both the low dielectric loss and enhanced tunable properties of BST(Mn + Y) are useful for tunable devices application.     

Effects of Ge<Superscript>4+</Superscript> acceptor dopant on sintering and electrical properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript> lead-free piezoceramics

Lead-free (K_0.5Na_0.5)(Nb_1-xGe _x )O₃ (KNN-xGe, where x = 0-0.01) piezoelectric ceramics were prepared by conventional ceramic processing. The effects of Ge⁴⁺ cation doping on the phase compositions, microstructure and electrical properties of KNN ceramics were studied. SEM images show that Ge⁴⁺ cation doping improved the sintering and promoted the grain growth of the KNN ceramics. Dielectric and ferroelectric measurements proved that Ge⁴⁺ cations substituted Nb⁵⁺ ions as acceptors, and the Curie temperature (T_C) shows an almost linear decrease with increasing the Ge⁴⁺ content. Combining this result with microstructure observations and electrical measurements, it is concluded that the optimal sintering temperature for KNN-xGe ceramics was 1020°C. Ge⁴⁺ doping less than 0.4 mol.%can improve the compositional homogeneity and piezoelectric properties of KNN ceramics. The KNN-xGe ceramics with x = 0.2% exhibited the best piezoelectric properties: piezoelectric constant d₃₃ = 120 pC/N, planar electromechanical coupling coefficient k_p = 34.7%, mechanical quality factor Q_m = 130, and tanδ = 3.6%.     

Effect of Ni<Superscript>2+</Superscript> substitution on crystal structure and microwave dielectric properties for MgZrNb<Subscript>2</Subscript>O<Subscript>8</Subscript> ceramics

Monoclinic structured Mg_1?xNi_xZrNb₂O₈ (0?≤?x?≤?0.12) ceramics were synthesized for the first time through traditional solid-state reaction process and pure phase were obtained in all range. Rietveld refinement was used to analyze the crystal structure. With the increase of Ni²⁺ substitution amount, ε _r decreased, Q?×?f rose first then fell, τ _f shifted for the positive direction. Bond ionicity, lattice energy and bond energy were separately calculated to investigate the correlations with microwave dielectric properties. Typically, ceramics samples with the composition of Mg_0.92Ni_0.08ZrNb₂O₈ sintered at 1280 °C for 4 h exhibited the optimum microwave dielectric properties: ε _r ?=?24.58, Q?×?f?=?74534.1 GHz, τ _f ?=???49.11 ppm/°C, which could be a promising material for application.     

Strong up-conversion luminescence and electrical properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> multifunctional ceramics by Er<Superscript>3+</Superscript> doping

Novel green-emitting piezoelectric ceramics of SrBi_4?x Er _x Ti₄O₁₅ (SBT-xEr) were prepared. Strong up-conversion with bright green (524 and 548 nm) and a relatively weak red (660 nm) emission bands were obtained under 980 nm excitation at room temperature, which is attributed to the intra 4f–4f electronic transition of (²H_11/2, ⁴S_3/2)–⁴I_15/2 and the transition from ⁴F_9/2 to ⁴I_15/2 of Er³⁺ ions, respectively. Simultaneously, Er³⁺ doping promotes the electrical properties. At 0.8 mol%Er, the optimal electric properties with high Curie temperature of T _c?~527?°C, large remanent polarization of 2P _r?~14.92 μC/cm² and piezoelectric constant of d ₃₃?~17 pC/N was achieved. As a multifunctional material, Er³⁺ doped SBT showed a great potential to be used in 3D-display, bio-imaging, solid state laser and optical temperature sensor.     

Ultralow thermal conductivity of cerium-doped Nd<Subscript>2</Subscript>Zr<Subscript>2</Subscript>O<Subscript>7</Subscript> over a wide doping range

In this paper, we report an ultralow thermal conductivity and a high-temperature phase stability of the (Nd_1?x Ce _x )₂Zr₂O_7+x system over the temperature range from room temperature to 1600 °C and over a wide composition range (0.2 ≤ x ≤ 0.8), and the (Nd_1?x Ce _x )₂Zr₂O_7+x system is therefore considered a strong candidate material for the fabrication of next-generation high-temperature thermal barrier coatings. The observed thermal conductivities (0.65–1.0 W/mK) are about 60–40% lower than those of undoped Nd₂Zr₂O₇ over the same temperature range (100–700 °C) and indicate a glass-like behavior. For comparison, the variation in the thermal conductivity with the temperature of the (Gd_1?x Ce _x )₂Zr₂O_7+x system with similar point defects was also measured, and the observed behavior was almost the same as that of undoped Gd₂Zr₂O₇ and was mostly determined by phonon–phonon scattering (λ ∝ 1/T). The effect of point defect scattering and strong phonon scattering sources (rattlers) on the thermal conductivity is also discussed in this paper. The results of this study suggest that the ultralow thermal conductivity of (Nd_1?x Ce _x )₂Zr₂O_7+x can be attributed to the presence of rattlers because of the large difference between the ionic radii of the Nd³⁺ and Ce⁴⁺ ions.     

Large enhancement of upconversion luminescence in Er<Superscript>3+</Superscript>/In<Superscript>3+</Superscript>:Ba<Subscript>0.85</Subscript>Ca<Subscript>0.15</Subscript>TiO<Subscript>3</Subscript> lead-free piezoelectric ceramics

A series of In³⁺-doped Ba_0.85Ca_0.15TiO₃:0.75%Er³⁺/xIn³⁺ (BCT:Er/xIn) lead-free piezoelectric ceramics with excellent upconversion luminescence were synthesized by the solid state reaction method. The effects of In³⁺ content on the crystal structure, ferroelectric, dielectric, piezoelectric, and upconversion luminescence properties were systematically studied. Under 980 nm excitation, a giant enhancement of the green emission (550 nm) by 10 times is achieved upon 2.5% mol In³⁺ doping, which is rarely observed in rare-earth ions-doped perovskite ferroelectric materials. The ultraviolet-visible-near infrared absorption measurements show that the In³⁺ doping may improve the dissolution of Er³⁺ ions and modify the isolate-/clustered-Er³⁺ ratio for x?≤?2.5%, resulting in the enhancement of the absorption cross-section, thereby contributing to the enhancement of green luminescence. Unfortunately, the In³⁺ doping suppresses the ferroelectric and piezoelectric properties of the BCT:Er/xIn ceramics. This problem can be resolved by adding a small amount (1 mol%) of Yb³⁺ to the BCT:Er/xIn ceramics to restore their good ferroelectric and piezoelectric properties. Such In³⁺ and rare-earth ions co-doped ceramics with greatly enhanced upconversion luminescence and good ferroelectricity and piezoelectricity may have potential applications in electro-optical devices.     

Effect of sintering temperature on microstructures and microwave dielectric properties of Ba<Subscript>2</Subscript>MgWO<Subscript>6</Subscript> ceramics

The microwave dielectric properties of Ba₂MgWO₆ ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba₂MgWO₆ ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (? _r ) of 16.8–18.2 and unloaded quality factor (Q _u  × f) of 7000–118,200 GHz were obtained at sintering temperatures in the range 1450–1650 °C for 2 h. A maximum apparent density of 6.76 g/cm³ was obtained for Ba₂MgWO₆ ceramic, sintered at 1650 °C for 2 h. A dielectric constant (? _r ) of 18.4, an unloaded quality factor (Q _u  × f) of 118,200 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?34 ppm/°C were obtained when Ba₂MgWO₆ ceramics were sintered at 1650 °C for 2 h.     

Enhanced magnetoelectric coupling in La-modified Bi<Subscript>5</Subscript>Co<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Ti<Subscript>3</Subscript>O<Subscript>15</Subscript> multiferroic ceramics

Multiferroic properties of La-modified four-layered perovskite Bi_5?x La _x Fe_0.5Co_0.5Ti₃O₁₅ (0 ≤ x ≤ 1) ceramics were investigated, by analyzing the magnetodielectric effect, magneto-polarization response and magnetoelectric conversion. X-ray diffraction indicated the formation of pure Aurivillius ceramics, and Raman spectroscopy revealed the Bi ions displacement and the crystal structure variation. The enhancement of ferromagnetic and ferroelectric properties was observed in Bi_5?x La _x Fe_0.5Co_0.5Ti₃O₁₅ after La modification. The evidence for enhanced ME coupling was determined by magnetic field-induced marked variations in the dielectric constant and polarization. A maximum ME coefficient of 1.15 mV/cm·Oe was achieved in Bi_4.25La_0.75Fe_0.5Co_0.5Ti₃O₁₅ ceramic, which provides the possible promise for novel magnetoelectric device application.     

The enhanced interface effect induced by thermal pressure in Nd<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> ceramics

Polycrystalline ceramics Nd_0.7Sr_0.3MnO _y prepared by solid-state reaction were treated under high pressure of 9 GPa and temperature of 1000 K. The electrical transport behaviour of samples were investigated by a variable temperature system and a peculiar transport character was found at low temperature of 120 K, the I–V showed an obvious step-shape behaviour with the increase in the measurement voltages; at much lower temperature of 12.3 K, the I–V curves exhibited a notable symmetric hysteresis at a critical voltage of 4.5 V, although a linear I–V behaviour at 293 K. On the other hand, the R–T measurement revealed that the resistivity peak (resistivity at T _{M I} ) disappeared gradually and is replaced by a resistivity platform with the increase in the load currents, surprisingly, the resistivity platform broadened with continuous increase in the load currents but weakened when an external magnetic field was applied. All of these phenomena were not observed for the un-treated sample. The particle attenuated and the enhanced interface effect which resulted from the violent thermal-pressure treatment was responsible for the unique electromagnetic transport.     

Magnetic,magnetocaloric properties,and critical behavior in a layered perovskite La<Subscript>1.4</Subscript>(Sr<Subscript>0.95</Subscript>Ca<Subscript>0.05</Subscript>)<Subscript>1.6</Subscript>Mn<Subscript>2</Subscript>O<Subscript>7</Subscript>

We report the results of magnetic, magnetocaloric properties, and critical behavior investigation of the double-layered perovskite manganite La_1.4(Sr_0.95Ca_0.05)_1.6Mn₂O₇. The compounds exhibits a paramagnetic (PM) to ferromagnetic (FM) transition at the Curie temperature T _C = 248 K, a Neel transition at T _N = 180 K, and a spin glass behavior below 150 K. To probe the magnetic interactions responsible for the magnetic transitions, we performed a critical exponent analysis in the vicinity of the FM–PM transition range. Magnetic entropy change (??S _M) was estimated from isothermal magnetization data. The critical exponents β and γ, determined by analyzing the Arrott plots, are found to be T _C = 248 K, β = 0.594, γ = 1.048, and δ = 2.764. These values for the critical exponents are close to the mean-field values. In order to estimate the spontaneous magnetization M _S(T) at a given temperature, we use a process based on the analysis, in the mean-field theory, of the magnetic entropy change (??S _M) versus the magnetization data. An excellent agreement is found between the spontaneous magnetization determined from the entropy change [(??S _M) vs. M ²] and the classical extrapolation from the Arrott curves (µ₀H/M vs. M ²), thus confirming that the magnetic entropy is a valid approach to estimate the spontaneous magnetization in this system and in other compounds as well.     

Characterization of Zn doped MgTiO<Subscript>3</Subscript> ceramics: an approach for RF capacitor applications

In the present study the effect of Zn substitution on densification, microstructure, microwave and broad band dielectric properties of MgTiO₃ ceramics were investigated. The (Mg_1?x Zn _x )TiO₃ (x?=?0.01–0.07) ceramics have been prepared by the conventional solid-state reaction method. The sintering conditions were optimized to obtain the best dielectric properties with maximum relative densities. The microwave dielectric properties are heavily influenced by the amount of x concentration. The optimum dielectric properties of ε _r ~ 17.34, Q?×?f _o ~ 274 THz, τ _f ~ -40.3 ppm/^oC is obtained for (Mg_0.95Zn_0.05)TiO₃ ceramics sintered at 1275?°C. The broad band dielectric properties of (Mg_0.95Zn_0.05)TiO₃ ceramics were measured in the frequency range of 1–100 MHz, and temperature range of 133–483 K. Interestingly, the broad band dielectric properties show relaxation behaviour with frequency. The higher temperature dielectric spectrum of (Mg_0.95Zn_0.05)TiO₃ (MZT) ceramics displayed a distinct dispersion, which is shifting towards a lower frequency side. The observed dielectric relaxation behavior is analyzed using Cole–Cole plot. Furthermore, voltage dependent capacitance behavior at different frequencies is studied for the MZT sample, and it’s interesting to note that the capacitance is stable with the variation in voltage. The electrical conductivity study is carried out as a function of frequency and temperature for MZT sample and the activation energy is calculated by using Arrhenius equation, which is found to be 0.07 eV at 10 MHz. The obtained dielectric response of MZT ceramics are suitable for dielectric resonator and type-1 RF capacitor applications.     

Ho<Subscript>2</Subscript>S<Subscript>3</Subscript>-Ga<Subscript>2</Subscript>S<Subscript>3</Subscript> phase diagram

The Ho₂S₃-Ga₂S₃ system has been studied using differential thermal analysis, X-ray diffraction, microstructural analysis, microhardness tests, and density measurements, and its phase diagram has been constructed. The system contains three ternary compounds: Ho₃GaS₆, HoGaS₃, and Ho₆Ga_10/3S₁₄. Their melting behavior has been studied for the first time. The compound Ho₆Ga_10/3S₁₄ melts congruently at 1435 K; Ho₃GaS₆ and HoGaS₃ melt incongruently at 1370 and 1250 K, respectively. The Ho₂S₃-Ga₂S₃ system is a pseudobinary join of the ternary system Ho-Ga-S. At room temperature, the β-Ga₂S₃-based solid solution extends to 1.5 mol % Ho₂S₃; the Ho₂S₃ solubility in γ-Ga₂S₃ is 10 mol %. The compounds HoGaS₃ and Ho₃GaS₆ crystallize in orthorhombic symmetry (Ho₃GaS₆: a = 10.40 Å, b = 13.20 Å, c = 6.44 Å, Z = 4; HoGaS₃: a = 6.8 Å, b = 9.92 Å, a = 3.08 Å, Z = 4). Ho₆Ga_10/3S₁₄ has a hexagonal structure (a = 9.62 Å, c = 6.04 Å).