Directional solidification and growth characteristics of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Er<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>/ZrO<Subscript>2</Subscript> ternary eutectic ceramic by laser floating zone melting

Directionally solidified Al₂O₃/Er₃Al₅O₁₂/ZrO₂ ternary eutectic ceramic in situ composite rods with length of 110 mm have been fabricated by laser floating zone melting. The microstructural characteristics of steady growth zone, initial growth zone and solid/liquid interface are investigated under high temperature gradient. In the steady growth zone, the eutectic spacing (λ) is rapidly decreased as increasing the growth rate (V), and the corresponding relationship between growth rate and eutectic spacing is determined to be λ = 11.14 × V ^?1/2. The temperature gradient has been measured to be about 5.3 × 10³ K/cm. In the initial growth zone, the melting process and temperature distribution are recorded by infrared thermal imager, and several unstable complex microstructures are observed. In the quenched zone, the regular eutectics with minimum eutectic spacing of 200 nm are obtained. Moreover, the solid/liquid interface during solidification shows convex interface morphology and the interface height is gradually decreased as increasing the growth rate. The eutectic growth behaviors at the center and edge of the as-grown rod are compared and discussed.     

Low temperature sintering and dielectric properties of Ba<Subscript>3</Subscript>(VO<Subscript>4</Subscript>)<Subscript>2</Subscript> microwave ceramics using Co<Subscript>2</Subscript>O<Subscript>3</Subscript> additives

The Ba₃(VO₄)₂–x wt% Co₂O₃ (x?=?0.5–5) ceramics were prepared by the solid state reaction method in order to reduce the sintering temperature. The effects of the Co₂O₃ additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of Ba₃(VO₄)₂ ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. As a result, the Q?×?f value of 54,000 GH, the ε _r of 14.6 and the τ_f value of +58.5 ppm/°C were obtained in the sample of the Ba₃(VO₄)₂–3 wt% Co₂O₃ ceramic sintered at the temperature of 925 °C, which is capable to co-fire with electrode metal of high conductivity such as Ag (961 °C). Moreover, the Q?×?f values of the sample with Co₂O₃ higher than that of 3 wt% additions decreased because of the formation of Ba₂V₂O₇ phase.     

Very high thermal stability with excellent dielectric,and non-ohmics properties of Mg-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4.2</Subscript>O<Subscript>12</Subscript> ceramics

In this work, the nominal CaCu_3?xMg_xTi_4.2O₁₂ (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very low loss tangent (tanδ)?<?0.009–0.014 and giant dielectric constant (ε′) ～?1.1?×?10⁴–1.8?×?10⁴ with excellent temperature coefficient (Δε′) less than ±?15% in a temperature range of ??60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased with increasing Mg²⁺ dopants due to the increase of grain boundary resistance (R_gb) caused by the very high density of grain, resulting from the substitution of small ionic radius Mg²⁺ dopants in the structure. In addition, CaCu_3?xMg_xTi_4.2O₁₂ ceramics displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α) and a breakdown field (E_b) due to Mg²⁺doping. The high values of ε′ (14012), α (13.64) and E_b (5977.02 V/cm) with very low tanδ value (0.009) were obtained in a CaCu_2.90Mg_0.10Ti_4.2O₁₂ ceramic sintered at 1100 °C for 8 h.     

Ultralow thermal conductivity of cerium-doped Nd<Subscript>2</Subscript>Zr<Subscript>2</Subscript>O<Subscript>7</Subscript> over a wide doping range

In this paper, we report an ultralow thermal conductivity and a high-temperature phase stability of the (Nd_1?x Ce _x )₂Zr₂O_7+x system over the temperature range from room temperature to 1600 °C and over a wide composition range (0.2 ≤ x ≤ 0.8), and the (Nd_1?x Ce _x )₂Zr₂O_7+x system is therefore considered a strong candidate material for the fabrication of next-generation high-temperature thermal barrier coatings. The observed thermal conductivities (0.65–1.0 W/mK) are about 60–40% lower than those of undoped Nd₂Zr₂O₇ over the same temperature range (100–700 °C) and indicate a glass-like behavior. For comparison, the variation in the thermal conductivity with the temperature of the (Gd_1?x Ce _x )₂Zr₂O_7+x system with similar point defects was also measured, and the observed behavior was almost the same as that of undoped Gd₂Zr₂O₇ and was mostly determined by phonon–phonon scattering (λ ∝ 1/T). The effect of point defect scattering and strong phonon scattering sources (rattlers) on the thermal conductivity is also discussed in this paper. The results of this study suggest that the ultralow thermal conductivity of (Nd_1?x Ce _x )₂Zr₂O_7+x can be attributed to the presence of rattlers because of the large difference between the ionic radii of the Nd³⁺ and Ce⁴⁺ ions.     

Green photoluminescence and afterglow of Tb-doped SrAl<Subscript>2</Subscript>O<Subscript>4</Subscript>

Trivalent terbium-doped strontium aluminate (SrAl₂O₄:Tb³⁺) nanoparticles were synthesized via the sol–gel combustion technique, and the green photoluminescence (PL) and afterglow were evaluated to clarify the afterglow mechanism of SrAl₂O₄:Tb³⁺. The green PL of SrAl₂O₄:Tb³⁺ with characteristic emissions at 488, 543, 586, and 622 nm indicated that Tb dopant acts as the luminescent center of the PL. Contrarily, the green afterglow of SrAl₂O₄:Tb³⁺ was a broadband spectrum with its peak centered at around 520 nm, but no traces of Eu were found in SrAl₂O₄:Tb³⁺ phosphors within the detection limit of 1 μg/g. The band structures and density of states of SrAl₂O₄:Tb³⁺ were calculated within the framework of density functional theory. Both the ground state of Tb³⁺ dopant and the trap levels of oxygen vacancy were quantitatively determined in the band gap of SrAl₂O₄. Our results suggest that the deep electron trap of oxygen vacancy in the host acts as the luminescent center of the green afterglow from SrAl₂O₄:Tb³⁺. A possible afterglow mechanism is proposed to shed fresh light on the green afterglow of SrAl₂O₄:Tb³⁺.     

Crystal structure,microstructure and microwave dielectric properties of novel MgAl<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>10</Subscript> ceramic

In the present work, a novel MgAl₂Ti₃O₁₀ ceramic was obtained using a traditional solid-state reaction method. X-ray diffraction and energy dispersive spectrometer showed that the main MgAl₂Ti₃O₁₀ phase was formed after sintered at 1300–1450 °C. With rising the sintering temperature from 1300 to 1450 °C, the bulk density (ρ), relative permittivity (ε _r ) and Q?×?f value firstly increased, reached the maximum values (3.61 g/cm³, 14.9, and 26,450 GHz) and then decreased. The temperature coefficient of resonator frequency (τ _f ) showed a slight change at a negative range of ??94.6 to ??83.7 ppm/°C. When the sintering temperature was 1400 °C, MgAl₂Ti₃O₁₀ ceramics exhibited the best microwave dielectric properties with Q?×?f?=?26,450 GHz, ε _r ?=?14.9 and τ _f ?=???83.7 ppm/°C.     

Synthesis and high-temperature electrical conductivity of Ln<Subscript>2</Subscript>Ti<Subscript>2</Subscript>O<Subscript>7</Subscript> and LnYTi<Subscript>2</Subscript>O<Subscript>7</Subscript> (Ln = Dy,Ho)

Ho₂Ti₂O₇ and LnYTi₂O₇ (Ln = Dy, Ho) pyrochlores have been synthesized using hydroxide coprecipitation, mechanical activation, and firing at 1600°C. The bulk and grain-boundary components of their conductivity have been determined for the first time by impedance spectroscopy. The 740°C bulk conductivity of Ho₂Ti₂O₇ is 4 × 10^?4 S/cm, and that of HoYTi₂O₇ is 1 × 10^?3 S/cm, with activation energies E _a = 1.01 and 1.17 eV, respectively, suggesting that these materials are new oxygen-ion conductors. The bulk conductivity of DyYTi₂O₇ (3 × 10^?4 S/cm at 740°C, E _a = 1.09 eV) is almost one order of magnitude lower than that of HoYTi₂O₇ (1 × 10^?3 S/cm at 740°C, E _a = 1.17 eV).     

Strong up-conversion luminescence and electrical properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> multifunctional ceramics by Er<Superscript>3+</Superscript> doping

Novel green-emitting piezoelectric ceramics of SrBi_4?x Er _x Ti₄O₁₅ (SBT-xEr) were prepared. Strong up-conversion with bright green (524 and 548 nm) and a relatively weak red (660 nm) emission bands were obtained under 980 nm excitation at room temperature, which is attributed to the intra 4f–4f electronic transition of (²H_11/2, ⁴S_3/2)–⁴I_15/2 and the transition from ⁴F_9/2 to ⁴I_15/2 of Er³⁺ ions, respectively. Simultaneously, Er³⁺ doping promotes the electrical properties. At 0.8 mol%Er, the optimal electric properties with high Curie temperature of T _c?~527?°C, large remanent polarization of 2P _r?~14.92 μC/cm² and piezoelectric constant of d ₃₃?~17 pC/N was achieved. As a multifunctional material, Er³⁺ doped SBT showed a great potential to be used in 3D-display, bio-imaging, solid state laser and optical temperature sensor.     

Low temperature sintering and microwave dielectric properties of Zn<Subscript>3</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramic

Crystal structure and dielectric properties of Zn₃Mo₂O₉ ceramics prepared through a conventional solid-state reaction method were characterized. XRD and Raman analysis revealed that the Zn₃Mo₂O₉ crystallized in a monoclinic crystal structure and reminded stable up to1020 °C. Dense ceramics with high relative density (~ 92.3%) were obtained when sintered at 1000 °C and possessed good microwave dielectric properties with a relative permittivity (ε _r ) of 8.7, a quality factor (Q?×?f) of 23,400 GHz, and a negative temperature coefficient of resonance frequency (τ _f ) of around ??79 ppm/°C. With 5 wt% B₂O₃ addition, the sintering temperature of Zn₃Mo₂O₉ ceramic was successfully lowered to 900 °C and microwave dielectric properties with ε _r ?=?11.8, Q?×?f?=?20,000 GHz, and τ _f = ??79.5 ppm/°C were achieved.     

Effect of Ni<Superscript>2+</Superscript> substitution on crystal structure and microwave dielectric properties for MgZrNb<Subscript>2</Subscript>O<Subscript>8</Subscript> ceramics

Monoclinic structured Mg_1?xNi_xZrNb₂O₈ (0?≤?x?≤?0.12) ceramics were synthesized for the first time through traditional solid-state reaction process and pure phase were obtained in all range. Rietveld refinement was used to analyze the crystal structure. With the increase of Ni²⁺ substitution amount, ε _r decreased, Q?×?f rose first then fell, τ _f shifted for the positive direction. Bond ionicity, lattice energy and bond energy were separately calculated to investigate the correlations with microwave dielectric properties. Typically, ceramics samples with the composition of Mg_0.92Ni_0.08ZrNb₂O₈ sintered at 1280 °C for 4 h exhibited the optimum microwave dielectric properties: ε _r ?=?24.58, Q?×?f?=?74534.1 GHz, τ _f ?=???49.11 ppm/°C, which could be a promising material for application.     

Synthesis,structure, and properties of the non-centrosymmetric borate Rb<Subscript>2</Subscript>CaB<Subscript>8</Subscript>O<Subscript>26</Subscript>H<Subscript>24</Subscript>

Single crystals of Rb₂CaB₈O₂₆H₂₄, a new non-centrosymmetric borate material, have been grown with sizes up to 8 × 5 × 3 mm³ by the slow evaporation of water solution at room temperature. The structure of the compound was determined by single-crystal X-ray diffraction. It crystallizes in the orthorhombic system, space group P2₁2₁2₁ with a = 11.5288(3) Å, b = 12.6334(4) Å, c = 16.6966(4) Å, Z = 4 and R ₁ = 0.0405, wR ₂ = 0.1043. Ultraviolet (UV)–vis spectrum transmission is performed on the Rb₂CaB₈O₂₆H₂₄, which shows an absorption edge about 195 nm in the UV region. Thermal properties were investigated by TG–DSC analysis. The powder second-harmonic generation (SHG) intensity measured by the Kurtz-Perry method indicates that Rb₂CaB₈O₂₆H₂₄ has about one-third of KDP (KH₂PO₄).The influence of different molar ratios and evaporation speed of water solution on crystal quality and size was also performed on the reported material.     

V<Subscript>3.047</Subscript>O<Subscript>7</Subscript>, a new high-pressure oxide with the simpsonite structure

Reaction between α-V₂O₅ and NaN₃ has been studied at pressures from 5.0 to 6.0 GPa and temperatures from 600 to 800°C using Toroid high-pressure chambers. A new oxide, V_3.047O₇ (VO_2.297), isostructural with simpsonite, Al₄Ta₃O₁₃(OH), has been detected in samples with the initial composition 0.2NaN₃ · V₂O₅ after high-temperature, high-pressure processing at p = 5.0 GPa and t = 800°C for 2 min. The crystal structure of the oxide has been refined by the Rietveld method using X-ray powder diffraction data: a = 7.35136(2) Å, c = 4.51462(2) Å, V = 211.294(1) ų, Z = 2, sp. gr. P3. Each vanadium atom in this structure is coordinated by six oxygens in the form of a [VO₆] octahedron. The synthesized oxide is a second compound with the simpsonite structure. We have measured the infrared transmission and Raman spectra of V_3.047O₇. Electrical measurements have demonstrated that the material is a semiconductor.     

The magnetic properties of BiY<Subscript>2</Subscript>Fe<Subscript>5</Subscript>O<Subscript>12</Subscript> nanoparticles doped with Cr ions

BiY₂Cr _x Fe_5?x O₁₂ (x = 0, 0.05, 0.1, 0.2, 0.3) nanocrystals were synthesized by using a sol-gel method. Samples were characterized by the powder X-ray diffraction (XRD), the thermal gravity analysis (TGA) and the differential thermal analysis (DTA), the vibrating sample magnetometer(VSM) and Mössbauer spectrums. The average sizes of the particles were determined by the Scherrer’s formula. The special Ms and Mössbauer spectra of BiY₂Cr _x Fe_5?x O₁₂ nanocrystals are researched at room temperature. It is seen that the special Mss of samples are initially increased with increasing Cr³⁺ content (x < 0.1), and decreased with increasing content of Cr³⁺ ions (x > 0.1).     

Crystal structure of KNa<Subscript>3</Subscript>[(UO<Subscript>2</Subscript>)<Subscript>5</Subscript>O<Subscript>6</Subscript>(SO<Subscript>4</Subscript>)]

The crystal structure of a previously unknown compound KNa₃[(UO₂)₅O₆(SO₄)] [space group Pbca, a = 13.2855(15), b = 13.7258(18), c = 19.712(2) Å, V = 3594.6(7) ų] was solved by direct methods and refined to R ₁ = 0.055 for 3022 reflections with |F _hkl | ≥ 4σ |F _hkl |. In the structure there are five sym-metrically nonequivalent uranyl cations. They are linked by cationcation (CC) interactions to form a pentamer whose central cation is U(2)O ₂ ²⁺ forming two three-centered CC bonds. All the uranyl ions are coordinated in the equatorial plane by five O atoms, which leads to the formation of pentagonal bipyramids sharing common edges to form layers parallel to the (100) plane. The sulfate tetrahedron links the uranyl layers into a 3D framework. The K⁺ and Na⁺ cations are arranged in framework voids. A brief review of CC interactions in U(VI) compounds is presented.     

Effect of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> addition on the microstructure and electrical properties of LaMnO<Subscript>3</Subscript>-based NTC thermistors

A study to develop a new system of negative temperature coefficient thermistors for wide temperature range, A series of Mn-based perovskite-structured ceramics of composition (LaMn_1?x Al _x O₃)_0.9(Al₂O₃)_0.1 has been synthesized by conventional solid state reaction at 1350?°C. The X-ray diffraction patterns showed that for all the samples, the substitution of manganese by aluminum up to x?=?0.1 preserved the rhombohedral perovskite LaMnO₃-like phase. For x?=?0.2, apart from the LaMnO₃-like structure, a second perovskite phase based on the cubic LaAlO₃ structure was formed. For x?=?0.3 and 0.4, the phase present was LaAlO₃ -type structure. The grain sizes of the sintered body detected by scanning electron microscope were decreased with increasing Al₂O₃ content. The resistivity increases with increasing the Al content. The obtained values of ρ _25?°C and B _25/50 and E _a are in the range of 10–13103 Ω cm, 1813–2794 K, 0.156–0.241 eV, respectively. The resistance variation (ΔR/R) was <0.241% and the minimum value (0.0483%) was obtained for aging at 125?°C at 500 h. The aim of this work was explored new composite ceramics materials, which could be used as potential candidates for wide temperature range from ?100 to 500?°C thermistors applications.     

Synthesis and High-Temperature Heat Capacity of Dy<Subscript>2</Subscript>Ge<Subscript>2</Subscript>O<Subscript>7</Subscript> and Ho<Subscript>2</Subscript>Ge<Subscript>2</Subscript>O<Subscript>7</Subscript>

The Dy₂Ge₂O₇ and Ho₂Ge₂O₇ pyrogermanates have been prepared by solid-state reactions in several sequential firing steps in the temperature range 1237–1473 K using stoichiometric mixtures of Dy₂O₃ (or Ho₂O₃) and GeO₂. The heat capacity of the synthesized germanates has been determined as a function of temperature by differential scanning calorimetry in the range 350–1000 K. The experimentally determined C _p (T) curves of the dysprosium and holmium germanates have no anomalies and are well represented by the Maier–Kelley equation. The experimental C _p (T) data have been used to evaluate the thermodynamic functions of the Dy₂Ge₂O₇ and Ho₂Ge₂O₇ pyrogermanates: enthalpy increment H°(T)–H°(350 K), entropy change S°(T)–S°(350 K), and reduced Gibbs energy Ф°(T).     

Understanding of post deposition annealing and substrate temperature effects on structural and electrical properties of Gd<Subscript>2</Subscript>O<Subscript>3</Subscript> MOS capacitor

The purpose of this study is to understand the effects of substrate temperature (ST) and post deposition annealing (PDA) on the structural-electrical properties of Gd₂O₃ film and to evaluate the electrical performances of the MOS based devices formed with this dielectric. The Gd₂O₃/Si structures were annealed at 500, 600, 700, and 800 °C under N₂ ambient after the films were grown on heated p-Si substrate at various temperatures ranged from 20 to 300 °C by RF magnetron sputtering. For any given ST, the crystallization/grain size increased with increasing PDA temperature. The bump in the accumulation region or continuous decrease in the capacitance values of the inversion region of the C–V curves for 800 °C PDA was not observed. The lowest effective oxide charge density (Q _eff ) value was obtained to be ??1.13?×?10¹¹ cm^?2 from the MOS capacitor with Gd₂O₃, which is grown on heated Si at 300 °C and annealed at 800 °C. The density of the interface states (D _it ) was found to be in the range of 0.84?×?10¹¹ to 1.50?×?10¹¹ eV^?1 cm^?2. The highest dielectric constant (ε) and barrier height \(({\Phi _B})\) values were found to be 14.46 and 3.68, which are obtained for 20 °C ST and 800 °C PDA. The results show that the negative charge trapping in the oxide layer is generally more than that of the positive, but, it is reverse of this situation at the interface. The leakage current density decreased after 20 °C ST, but no significant change was observed for other ST values.     

Effects of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> additive on sintering behavior and microwave dielectric properties of ZnTa<Subscript>2</Subscript>O<Subscript>6</Subscript> ceramics

ZnTa₂O₆ ceramics with various amount of Al₂O₃ additive were synthesized by a conventional mixed-oxide route. The grain growth of ZnTa₂O₆ ceramics was accelerated with Al₂O₃ additive. However, excessive addition (>1.0 wt%) of Al₂O₃ leaded to abnormal grain growth. With Al₂O₃ addition, the Al₂O₃ additive did not solubilized into ZnTa₂O₆ structure but resulted in forming the second phase. The Al₂O₃ addition resulted in the lower sintering temperature of ZnTa₂O₆ ceramics and improved microwave dielectric properties. The dielectric constant (ε_r) of the samples did not change much and ranged from 32.41 to 34.33 with different amount of Al₂O₃ addition. The optimized quality factor (Q × f) was higher than 70,000 GHz as a result of the denser ceramics. The temperature coefficient of resonant frequency (τ _f ) of the doped ZnTa₂O₆ ceramics could be optimized to near-zero.     

Magnetization reversal and tunable exchange bias behavior in Mn-substituted NiCr<Subscript>2</Subscript>O<Subscript>4</Subscript>

Single phase samples of Ni(Cr_1?xMn _x )₂O₄ (x = 0–0.50) were synthesized by using sol–gel route. Investigation of structural, magnetic, exchange bias and magnetization reversal properties was carried out in the bulk samples of Ni(Cr_1?xMn _x )₂O₄. Rietveld refinement of the X-ray diffraction patterns recorded at room temperature reveals the tetragonal structure for x = 0 sample with I4₁/amd space group and cubic structure for x ≥ 0.05 samples with \( {\text{Fd}\bar{3}\text{m}} \) space group. Magnetization measurements show that all samples exhibit ferrimagnetic behavior, and the transition temperature (T_C) is found to increase from 73 K for x = 0 to 138 K for x = 0.50. Mn substitution induces magnetization reversal behavior especially for 30 at% of Mn in NiCr₂O₄ system with a magnetic compensation temperature of 45 K. This magnetization reversal is explained in terms of different site occupation of Mn ions and the different temperature dependence of the magnetic moments of different sublattices. Study of exchange bias behavior in x = 0.10 and 0.30 samples reveals that they exhibit negative and tunable positive and negative exchange bias behavior, respectively. The magnitudes of maximum exchange bias field of these samples are found to be 640 and 5306 Oe, respectively. Exchange bias in x = 0.10 sample originates from the anisotropic exchange interaction between the ferrimagnetic and the antiferromagnetic components of magnetic moment. The tunable exchange bias behavior in x = 0.30 sample is explained in terms of change in domination of one sublattice moment over the other as the temperature is varied.     

Low-temperature sintering behavior and properties of <Emphasis Type="Italic">monoclinic</Emphasis>-SrAl<Subscript>2</Subscript>Si<Subscript>2</Subscript>O<Subscript>8</Subscript> ceramics prepared via an aqueous suspension milling process

In this work, by an aqueous suspension milling process, boric acid (H₃BO₃), calcium hydroxide [Ca(OH)₂], strontium carbonate (SrCO₃) and barium hydroxide octahydrate [Ba (OH)₂·8H₂O] are mixed with strontium carbonate (SrCO₃) and kaolin (Al₂O₃·2SiO₂·2H₂O) to prepare SrAl₂Si₂O₈ ceramics with a sintering temperature of 950 °C. According to chemical compositions of flux agents B₂O₃, CaO·2B₂O₃, SrO·2B₂O₃ and BaO·2B₂O₃, raw materials boric acid, calcium hydroxide, strontium carbonate and barium hydroxide octahydrate were introduced to the suspension slurries of strontium carbonate and kaolin to decrease the densification sintering temperature of SrAl₂Si₂O₈ ceramics. In addition, the Sr element in SrAl₂Si₂O₈ ceramics are partly substituted with Ba and Ca elements, respectively, to investigate the low-temperature sintering behavior of partly substituted SrAl₂Si₂O₈ ceramics. The results indicated that the addition of flux agents to SrAl₂Si₂O₈ ceramics can availably achieve the densification sintering of SrAl₂Si₂O₈ ceramics at 950 °C, whereas the substitution of Sr with Ca or Ba have a great effect on sintering behaviors and dielectric properties of SrAl₂Si₂O₈ ceramics. Additionally, main crystal phases of the SrAl₂Si₂O₈ ceramics are monoclinic- SrAl₂Si₂O₈ and small quartz, but the evolution of crystal phases also depend on flux agents.