Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4/KTP green laser with AO and GaAs saturable absorber

By using both acousto-optic modulator and GaAs saturable absorber, a diode-pumped Q-switched and mode-locked(QML) YVO₄/Nd:YVO₄/KTP green laser is presented. The experimental results show that the doubly QML YVO₄/Nd:YVO₄/KTP green laser has good stability and nearly 100% modulation depth. The average output power and the pulse width of the Q-switched envelope have been measured. The mode-locked pulse inside the Q-switched envelope has a repetition rate of 137 MHz and its pulse width is estimated to be about 280 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML green laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Enhancement of stability and peak power in a diode-pumped doubly QML YVO4/Nd:YVO4 laser with EO and Cr:YAG saturable absorber

A diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/NdYVO₄ laser is realized with the electro-optic (EO) modulator and Cr⁴⁺:YAG saturable absorber, in which the repetition rate of the Q-switched envelope is controlled by the active EO modulation while the mode-locked pulses inside the Q-switched envelope depend on both the actively modulated loss and the passive saturable absorption. The experimental results show that the doubly QML laser can generate more stable and shorter pulses with higher peak power when compared with the singly passively QML laser with Cr⁴⁺:YAG. At the pump power of 20 W and the repetition rate 1 kHz, a 21 ns Q-switched pulse envelope with a average mode-locked peak power of 544 kW is obtained, which is the shortest Q-switched pulse envelope to my knowledge. In comparison to the singly passively QML laser with Cr⁴⁺:YAG, the doubly QML laser has compressed the Q-switched envelope pulse width 70% and improved the mode-locked pulsed peak power 27 times. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Photoluminescence of nanocrystalline YVO4:TmxDy1−x prepared by a modified Pechini method

This paper reports the luminescence effects of Tm³⁺ doped YVO₄:Dy nanocrystalline synthesized by a modified Pechini method. The structure and morphology were characterized by using X-ray diffraction (XRD) and transmission electron microscope (TEM). The relationship between the ratio of Tm³⁺/Dy³⁺ and the chromaticity is studied, i.e. Tm³⁺ ion doping effectively tunes the emission color of YVO₄:Tm_xDy_1−x phosphors. The best white light emission was observed with YVO₄:1%(Tm_0.6Dy_0.4). These results indicate that thulium doped YVO₄:Dy phosphors are promising white-emitting luminescence materials.     

EPR and vibrational studies of YVO4:Tm, Yb single crystal

A well oriented YVO₄ single crystal, with 5% Yb³⁺ and 2% Tm³⁺ nominal doping, was investigated using the Raman and EPR techniques.The EPR measurements suggest that Yb³⁺ ions occupy eight-coordinated Y³⁺ sites forming bisdisphenoids of the D_2d symmetry. An inhomogeneous distribution of rare-earth ions leads to a significant distortion of the local point symmetry (C₁). It seems that strong dipole–dipole interactions between Yb³⁺ ions are responsible for the distortion. As a result, two types of ytterbium magnetic centers appear. They correspond to paired magnetic centers and distorted isolated paramagnetic centers that are strongly sensitive to the magnetic field directions and some imperfections of the crystal. Pair centers can be recorded through the rotation around the c-crystal axis, whereas isolated centers can be measured when the crystal is rotated around the a-crystal axis. With the increasing temperature, the ytterbium signal disappeared at about 23 K and a group of narrow lines became visible. These lines, observed in the range of 240–550 mT, correspond to the Gd³⁺ (S = 7/2) ions, doped to the structure unintentionally from the basic materials.     

Radiation damage study of MeV ions-implanted Nd:YVO4 crystal

Damage formation mechanism of Nd:YVO₄ implanted with MeV ions is investigated. MeV Si⁺ ions were implanted into Nd:YVO₄ crystal, and the lattice damage was measured using Rutherford backscattering spectroscopy/channeling (RBS/C) method. The damage creation kinetic indicates a significant contribution from electronic energy loss to the surface damage. A detailed analysis allows us to deduce the different contributions from electronic and nuclear stopping powers to the lattice damage production. An obvious difference in extent of damage from 1 MeV and 3 MeV Si⁺ implantations also implies that there exists a threshold value of the electronic energy deposition for damage formation. The exact value of threshold is obtained by comparison with the experimental data obtained from 3 MeV O⁺, F⁺ and Si⁺ implantation results, which turns out to be (1.7 ± 0.1) keV/nm.     

Er,Yb:YVO4 waveguides deposited on amorphous SiO2 by PLD and UVPLD

In this work, erbium, and erbium and ytterbium co-doped YVO₄ waveguiding thin films were deposited on amorphous SiO₂ substrates by pulsed laser deposition (PLD) and ultraviolet-assisted pulsed laser deposition (UVPLD). The influence of the deposition technique on the structure, morphology, and optical properties of the films was investigated. At lower dopant concentrations the films prepared by UVPLD show better crystallinity and optical properties. All the samples show preferred orientation of the (001) zone axes parallel to the substrate surface. The polycrystalline samples show difference in the refractive indexes ?n (?n = n_TE − n_TM) for the TE and TM polarizations.     

Mild hydrothermal solid-phase synthesis of YVO4 nanocrystals

The tetragonal YVO₄ nanocrystals are facilely prepared via a hydrothermal solid-phase synthesis method directly utilizing bulk phase materials of V₂O₅ and Y₂O₃ as precursor. Whether additives (acid and EDTA) exist or not, the reaction can be performed in the mild temperature range from 130 to 200 °C. The products are characterized with XRD, FTIR, TEM and PL. The effect of acid and amounts of EDTA on the morphology of the product is investigated. The YVO₄ nanoparticles exhibit novel photoluminescence emission bands at 330 and 606 nm under 254 nm excitation. A growth mechanism of yttrium orthovanadate is proposed.     

Influence of Ce on the luminescence properties of Er/Yb:YVO4 crystals

YVO₄ single crystals doped with Ce³⁺, Er³⁺ and Yb³⁺ ions were grown by the Czochralsski technology. The luminescence properties of Er³⁺/Yb³⁺:YVO₄ single crystals with different concentration of Ce³⁺ were studied, and the energy transfer mechanism between Er³⁺, Yb³⁺ and Ce³⁺ was discussed based on their energy level properties. The branching ratios of the ⁴I_11/2 → ⁴I_13/2 transition in different samples were calculated. The results indicate that codopants of Ce³⁺ greatly enhance the population rate of the ⁴I_13/2 level due to the fast resonant energy transfer between Er³⁺ and Ce³⁺, i.e., ⁴I_11/2(Er³⁺) + ²F_7/2(Ce³⁺) → ⁴I_13/2(Er³⁺) + ²F_5/2(Ce³⁺).     

Photoluminescence properties of Nd:YVO4 single crystals by multi-die EFG method

Nd-doped YVO₄ crystal is an excellent material for making the diode-pumped solid lasers. In this study, Nd-doped YVO₄ multi-crystal with high quality was grown simultaneously by developed edge-defined film-fed growth (EFG) method. All crystals appeared homogenous Nd distribution and were found the stable step-faceting phenomena. The up-conversion properties on the Nd:YVO₄ multiple-crystal have been measured by the observations of transmission and photoluminescence (PL) spectra.     

Polarized spectral properties of Tm:K5Bi(MoO4)4 crystal

Trivalent thulium-doped K₅Bi(MoO₄)₄ single crystals were grown by the Czochralski method. Its polarized absorption and fluorescence spectra and fluorescence decay curves were recorded at room temperature. On the basis of the Judd-Ofelt theory, the spectral parameters of the Tm³⁺:K₅Bi(MoO₄)₄ crystal were calculated. The cross relaxations between Tm³⁺ ions were analyzed. The emission cross sections of the ³F₄ → ³H₆ transition were obtained by the Fuchtbauer-Ladenburg formula and then the gain cross sections around 1.9 μm were calculated. The peak emission cross section and width of emission band around 1.9 μm are comparable to those for Tm³⁺:YAG and the tunable range is about 280 nm for the potential ∼1.9 μm laser operation via the ³F₄ → ³H₆ transition.     

Annealing behavior of single mode planar waveguide in YVO4 produced by He ion implantation

We report, for the first time to our knowledge, the formation of single mode planar waveguide in z-cut YVO₄ by 400 keV, 500 keV He ion implantation in fluence of 3 × 10¹⁶ ions/cm² at room temperature or at liquid nitrogen temperature (77 K). We investigated annealing behavior of the guiding mode and near-field image in the waveguide by prism-coupling method and end-face coupling method respectively. We found that the effective refractive index of the TE₀ mode was different before and after annealing for the samples implanted at room temperature, while, annealing had nearly no influence on the effective refractive index of the TE₀ mode of the samples implanted at liquid nitrogen temperature (77 K). After annealing at 600 K for 1 h, no guiding mode was observed in the sample implanted by 400 keV He ion in fluence of 3 × 10¹⁶ ions/cm² at room temperature. The Rutherford backscattering/channeling technique was used to investigate the damage reduction after annealing treatments. The minimum yield of the implanted, annealed sample was 5.43%. We reconstructed the refractive index profiles in the waveguide under different condition by applying intensity calculation method.     

Ca4REO(BO3)3 crystals for green and blue microchip laser generation: from crystal growth to laser and nonlinear optical properties

We have taken advantage of congruent melting behavior of the nonlinear rare-earth oxoborate Ca₄REO(BO₃)₃ family to perfect a process of collective fabrication of self-frequency doubling microchip laser based on Nd:GdCOB (Ca₄Gd_1−xNd_xO(BO₃)₃) crystals. The process goes from Czochralski boule to 1 × 3 mm² chips perfectly oriented (better than 0.1°) to the phase matching direction (θ=90°, φ=46°) in the XY principal plane, with dielectric mirrors directly deposited on both faces of the chips. 20 mW of self-frequency doubling output power at 530 nm was performed under 800 mW of diode laser as incident pump power at 812 nm. In addition, new compositions from the solid solution Ca₄Gd_1−xY_xO(BO₃)₃ (Gd_1−xY_xCOB) (x=0.13, 0.16, 0.44) have been grown by the Czochralski pulling method, in order to achieve noncritical phase matching (NCPM) second harmonic generation of ⁴F_3/2 → ⁴I_9/2 Nd³⁺ doped laser hosts. Three types of laser wavelengths have been chosen: Nd:YAP (YAlO₃) at 930 nm, Nd:YAG (Y₃Al₅O₁₂) at 946 nm, and Nd:ASL (Nd_ySr_1−x La_x−yMg_x Al_12−xO₁₉) at 900 nm. Angular acceptance measurements of these three types of compositions present very large values, compared to pure GdCOB or YCOB oriented in critical phase matching configurations.     

Polarized spectroscopic properties of Ho ions in NaLa(MoO4)2 crystal

A Ho³⁺-doped NaLa(MoO₄)₂ single crystal was grown by the Czochralski method. The polarized absorption spectra, polarized fluorescence spectra, and fluorescence decay curves of the crystal were measured at room temperature. The spontaneous emission probabilities, radiative lifetimes, and fluorescence branching ratios of the typical fluorescence multiplets of Ho³⁺ ions were calculated. The polarized stimulated emission and gain cross-sections of the ⁵I₇ → ⁵I₈ transition were obtained. The results show that the Ho³⁺:NaLa(MoO₄)₂ crystal is a promising gain medium for tunable and ultrashort pulse lasers operating around 2.0 μm.     

Intensity parameters of Tm doped Sc2O3 transparent ceramic laser material

This work is focused on spectral investigations of Tm³⁺ doped Sc₂O₃ transparent ceramic as potential material for diode-pumped solid-state laser emitting around 2 μm. In the context of the Judd-Ofelt (J-O) theory a series of spectroscopic parameters such as J-O intensity parameters, oscillator strengths, radiative transitions probabilities, and radiative lifetimes as well as branching ratios are evaluated. The gain cross-sections which lead to an estimation of the probable operating laser wavelength for the ³F₄ → ³H₆ Tm³⁺ laser transition were also calculated.     

Wet chemical preparation of YVO4:Eu thin films as red-emitting phosphor layers for fully transparent flat dielectric discharge lamp

Highly transparent YVO₄:Eu thin films were deposited via dip coating of liquid nanoparticle dispersions on glass substrates. Annealing of the nanoparticle layers resulted in restructuring of the material into oriented crystalline films. The crystallinity was confirmed using powder X-ray diffraction. Film thickness was adjusted to 467 nm by multiple deposition. The resulting coatings show > 99% absorbance for wavelength below 300 nm and > 90% transmission in the visible spectral range. Under UV-light excitation a bright red photoluminescence with a quantum efficiency of 20% is observed. A planar, transparent dielectric barrier discharge lamp was constructed using YVO₄:Eu coated glasses and transparent electrodes made from antimony-doped tin dioxide thin films.     

Enhanced G4 emission in NaLaF4: Pr, Yb and charge transfer in NaLaF4: Ce, Yb studied by fourier transform luminescence spectroscopy

A high resolution luminescence study of NaLaF₄: 1%Pr³⁺, 5%Yb³⁺ and NaLaF₄: 1%Ce³⁺, 5%Yb³⁺ in the UV to NIR spectral range using a InGaAs detector and a fourier transform interferometer is reported. Although the Pr³⁺(³P₀ → ¹G₄), Yb³⁺(²F_7/2 → ²F_5/2) energy transfer step takes place, significant Pr³⁺¹G₄ emission around 993, 1330 and 1850 nm is observed. No experimental proof for the second energy transfer step in the down-conversion process between Pr³⁺ and Yb³⁺ can be given. In the case of NaLaF₄: Ce³⁺, Yb³⁺ it is concluded that the observed Yb³⁺ emission upon Ce³⁺ 5d excitation is the result of a charge transfer process instead of down-conversion.     

Diode-end-pumped passively Q-switched 1.34 μm Nd:Gd0.5Y0.5VO4 laser with Co:LMA saturable absorber

In this paper, the output performances at 1.34 μm in continuous wave operation and passive Q-switching regime of a diode-end-pumped Nd:Gd_0.5Y_0.5VO₄ laser have been investigated. The passive Q-switching regime was achieved with Co²⁺:LaMgAl₁₁O₁₉ (Co²⁺:LMA) saturable absorbers crystals. A maximum average output power of 230 mW was recorded with a Co²⁺:LMA with initial transmission of 81%. The minimum pulse duration was 116 ns, which corresponded to a repetition rate of 360 kHz, the single pulse energy of 2.1 μJ and the pulse peak power of 5.5 W.     

Up-conversion emission in KGd(WO4)2 single crystals triply-doped with Er/Yb/Tm, Tb/Yb/Tm and Pr/Yb/Tm ions

Triply-doped single crystals KGd(WO₄)₂:Er³⁺/Yb³⁺/Tm³⁺, KGd(WO₄)₂:Tb³⁺/Yb³⁺/Tm³⁺ and KGd(WO₄)₂:Pr³⁺/Yb³⁺/Tm³⁺ were grown by the Top Seeded Solution Growth (TSSG) method, with an aim of getting efficient up-converted multicolored luminescence, which subsequently can be used for generation of white light. Such an aim determined the choice of the triply doped compounds: excitation of the Yb³⁺ ions in the infrared spectral region is followed by red, green and blue emission from other dopants. It was shown that all these systems exhibit multicolor up-conversion fluorescence under 980 nm laser irradiation. Detailed spectroscopic studies of their absorption and luminescence spectra were performed. From the analysis of the dependence of the intensity of fluorescence on the excitation power the conclusion was made about significant role played by the host’s conduction band and other possible defects of the KGd(WO₄)₂ crystal lattice in the up-conversion processes.     

Luminescence properties of Ca4Y6(SiO4)6O:RE (RE = Eu, Tb, Dy, Sm and Tm) under vacuum ultraviolet excitation

The vacuum ultraviolet excited luminescent properties of Eu³⁺, Tb³⁺, Dy³⁺, Sm³⁺ and Tm³⁺ in the matrices of Ca₄Y₆(SiO₄)₆O were investigated. The bands at about 173 nm in the vacuum ultraviolet excited spectra were attributed to host lattice absorption of the matrix Ca₄Y₆(SiO₄)₆O. For Eu³⁺-doped samples, the O²⁻ → Eu³⁺ CTB was identified at 258 nm. Typical 4f-5d absorption bands in the region of 195-300 nm were observed in Tb³⁺-doped samples. For Dy³⁺-doped and Sm³⁺-doped samples, the broad excitation bands consisted of host absorptions, CTB and f-d transition. For Tm³⁺-doped samples, the O²⁻ → Tm³⁺ CTB was located at 191 nm. About the color purity and emission intensity, Ca₄Y₆(SiO₄)₆O:Tb³⁺ is an attractive candidate of green light PDP phosphor, and Ca₄Y₆(SiO₄)₆O:Dy³⁺ has potential application in the field of mercury-free lamps.     

Passive Q-switching performance of intracavity frequency-doubled red laser with mixed Nd:GdxY1−xVO4 crystals

Passive Q-switching laser operation of Nd:Gd_xY_1−xVO₄ mixed crystals at 671 nm has been compared in the same V-shape folded cavity. Based on our comparative analysis, the best laser characteristics - the highest pulse energy and peak power and the shortest pulse width - were demonstrated by Nd:Gd_0.63Y_0.37VO₄ crystal. At the same time, this crystal possesses the lowest thermal conductivity in comparison with the other Nd:Gd_xY_1−xVO₄ crystals, which could result in decreasing the average laser output power. To verify this assumption we also measured the focal lengths of thermal lens induced in the crystals during the laser operation.