Optical absorption of metallic Zn nanoparticles in Zn ion implanted sapphire

Zn⁺ ion implantation (48 keV) was performed at room temperature up to a fluence of 5 × 10¹⁷ cm⁻² in -Al₂O₃ single crystals. X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and optical absorption spectroscopy were utilized to characterize the optical properties, chemical charge states and the microstructure of embedded metallic Zn nanoparticles, respectively. XPS analysis indicated that implanted Zn ions are in the charge state of metallic Zn⁰. TEM analysis revealed the metallic Zn nanoparticles of 3–10 nm in the as-implanted sample at a fluence of 1 × 10¹⁷ cm⁻². A selected area electron diffraction (SAD) pattern indicates the random orientation of the Zn nanoparticles. A clear absorption peak appeared gradually in the optical absorption spectra of the as-implanted crystals, due to surface plasma resonance (SPR) of Zn nanoparticles. The wavelength of the absorption peak shifted from 260 nm to 285 nm with the increasing ion fluence, ascribed to the growth of Zn nanoparticles.     

基于磁偏转的真空弧离子源成分诊断

采用磁偏转的方法,对金属氢化物电极真空弧离子源放电产生的等离子体进行了成分诊断。采用了Ti D2电极材料进行放电,测量了在30-80 A弧流情况下的各离子的组分。实验结果表明,弧流越大时等离子体的密度越大,在现有引出结构下,由于等离子体发射面的凹凸变化导致测得的离子信号出现双峰。通过增加栅网可以减少等离子密度,双峰情况会有所减少。另外,随着弧流增大,氘所占比例会有所增加,弧流达到60 A以上氘含量增幅不明显。     

Elastic recoil detection analysis on the ANSTO heavy ion microprobe

The heavy ion microprobe at the Australian Nuclear Science and Technology Organisation is capable of focussing heavy ions with an ME/q² of up to 100 amu MeV. This makes the microprobe ideally suited for heavy ion elastic recoil detection analysis (ERDA). However, beam currents on a microprobe are usually very small, which requires a detection system with a large solid angle. We apply microbeam heavy ion ERDA using a large solid angle ΔE−E telescope with a gas ΔE detector to layered structures. We demonstrate the capability to measure oxygen and carbon with a lateral resolution of 20 μm, together with determination of the depth of the contamination in thin deposited layers.     

The performance of the Ljubljana ion microprobe

In August 2000 the setup of the Ljubljana ion microprobe, based on OM 150 triplet, has been completed. The beam line is installed at the 10° exit port of the 2 MeV Tandetron accelerator. It is equipped with motor driven slits, a precise five-axis goniometer and a spherically shaped measuring chamber with detectors for PIXE, PIGE, PESA, SE and RBS. In order to understand the beam optics along the complete system, consisting of the tandem accelerator and the beam line optical elements, an interactive computer code, based on a linear approximation, has been developed. The program is used both to determine the optimal parameters of the tandem focusing system in its daily use and to develop new beam line configurations. Test measurements performed on a copper grid yielded a spatial resolution of 1.0×1.5 μm² in the high current mode (30–100 pA) and 0.5×0.9 μm² in low current mode (10⁴ counts/s). First analytical results confirmed excellent performance of the new Ljubljana ion microprobe.     

Ar-ion-milling-induced structural changes of Cu50Zr45Ti5 metallic glass

We have systematically studied Ar-ion-milling-induced microstructural evolution in Cu₅₀Zr₄₅Ti₅ metallic glass (MG) during specimen preparation for transmission electron microscopy (TEM). We have observed the formation of a Cu₁₀Zr₇ intermetallic phase in samples prepared using low energy ion milling (2 keV) but without evident crystallization. We also observed the formation of nanocrystalline Cu₁₀Zr₇ phase (with a possibility of being mixed with other minor phases) in samples prepared using high energy ion milling (?3 keV). In contrast, the MG samples remained in the glassy state without any microstructural changes when prepared by either electropolishing or low energy ion milling with liquid nitrogen cooling (2 keV). Further, our study suggests that chemical decomposition might be a necessary intermediate stage for crystallization. In situ TEM electron irradiation shows ion-milling-induced phase segregation and preferred nanocrystallization in the precipitated regions.     

脉冲注入中靶温对金属间化合物生成的影响

研究了在钢和Ａｌ中脉冲注入Ｔｉ和Ｍｏ的条件下金属间化合物形成的规律及生长机理，给出了金属间化合物生长与靶温的关系，得出的实验结果与计算相符合。与电镜中退火原位观察结果比较发现，注入过程中金属间化合物生长温度（４００℃）比退火中金属间化合物生长温度（６００℃）低得多，说明注入过程中空位流和间隙原子流能促进金属间化合物的生长。通过脉冲注入已得到十余种金属化合物和金属间化合物，这些化合物的出现提高了注入     

离子束混合及离子注入陶瓷材料表面改性研究概述

对离子注入陶瓷材料引起的辐照损伤和材料力学性能、摩擦学性能的改善及陶瓷基体上金属薄膜的离子束混合增强粘着研究的进展进行了综述。     

ECR离子源高电荷态金属离子产生的MIVOC法实验研究

为满足兰州重离子加速器的实验要求,先后在中国科学院近代物理研究所14．5GHz（LECR2）及10GHz＋14．5GHz（LECR3）高电荷态ECR离子源上使用MIVOC（Metallic ion from volatile compounds）方法进行了高电荷态金属离子产生的实验研究。主要研究了铁和镍的各种高电荷态离子的产生,具有代表性的是210eμA的Fe^11＋、175eμA的Fe^12＋、142eμA的Fe^13＋、25eμA的Fe^16＋、64eμA的Ni^10＋、57eμA的Ni^13＋、31eμA的Ni^15＋和15eμA的Ni^16＋。本文将分别给出两种金属离子产生的多电荷态束流谱图,并对实验装置的安排、实验现象及结果进行讨论与总结。     

离子束介导外源DNA导入小麦后代变异系有关分析

离子束技术是一种有效的农作物诱变和介导转基因技术,本研究利用离子束介导转化选育到一批有价值的小麦变异材料.本文对变异材料的农艺性状、品质性状、种子醇溶蛋白图谱进行了深入分析.结果表明,变异材料的株高、主茎穗长、千粒重、叶片性状、蛋白质含量、湿面筋含量与对照相比都发生了明显的变化并达显著水平;变异材料种子醇溶蛋白谱带已发生了确切的变化,且某些材料已稳定,还有的材料醇溶蛋白谱带存在多态性,还在分离之中.研究结果表明离子束介导转基因技术可产生丰富的变异、创造新的种质资源,并为该技术在小麦育种上的应用提供理论依据.     

铬,钽离子束表面冶金合金的抗腐蚀机制

根据离子束表面冶金的特点，从合金成分、结构、缺陷、元素性质以及表面污染等方面系统地讨论了Ｃｒ、Ｔａ元素加入对金属腐蚀行为的影响。在此基础上，提出它们抑制腐蚀的综合模式，较好地解释了这类表面合金抗腐蚀的机制。     

Production of intense highly charged ion beams by IMP 14.5 GHz electron cyclotron resonance ion source

A new 14.5GHz Electron Cyclotron Resonance(ECR) ion source has been constructed over the last two years.The source was designed and tested by making use of the latest results from ECR ion source development ,such as high mirror magnetic filed,large plasma volume,and biased probe.140μA of O^7 ,185μA of Ar^11 and 50 μA of Xe^26 could be produced with a RF power of 800W, The intense beams of highly charged metallic ions are produced by means of the method of a metal evaporation oven and volatile compound throuth axial access,The test results are 130μA of Ca^11 ,70μA of Ca^12 and 65 μA of Fe^10 ,The ion source has been put into operation for the cyclotron at the Institute of Moderm Physics(IMP).     

低能离子注入对脱氧胸苷的辐照损伤

用紫外分光光度法测定了脱氧胸苷（ｄＴＲ）在２０ｋｅＶ Ｎ＾＋离子束辐照下残余活性Ｓ和碱基Ｔ释放量的剂量效应。发现Ｓ与样品的质量有关，且受损ｄＴＲ分子中约有５０％可产生碱基Ｔ。而强碱、强酸的后处理使这一比例显著下降，平均分别只有２３％和４１％，与γ辐射时的情况相反。     

Surface damage of metallic glasses by argon ion bombardment

The surface damage of metallic glasses Fe₄₀Ni₄₀P₁₄B₆, Fe₄₀Ni₃₈Mo₄B₁₈, Fe₄₀Ni₄₀B₂₀, Fe₈₀B₂₀ and Ni₆₄Zr₃₆ under argon ion bombardment at room temperature has been investigated. Blister formation was observed in the dose range of 1 × 10¹⁷ to 1 × 10¹⁸ ions/cm². At higher doses, blisters disappeared with concurrent roughening of the bombarded surface. Erosional features like cones and pyramids are not observed. Argon induced blisters also disappeared on room temperature aging without any further bombardment after blister formation. Post-irradiation annealing at high temperatures (673 and 873 K) resulted in blister formation, severe surface exfoliation and pin-hole formation. The precipitation of the implanted argon into bubbles is also observed.     

Charge sharing in multi-electrode devices for deterministic doping studied by IBIC

Following a single ion strike in a semiconductor device the induced charge distribution changes rapidly with time and space. This phenomenon has important applications to the sensing of ionizing radiation with applications as diverse as deterministic doping in semiconductor devices to radiation dosimetry. We have developed a new method for the investigation of this phenomenon by using a nuclear microprobe and the technique of Ion Beam Induced Charge (IBIC) applied to a specially configured sub-100 μm scale silicon device fitted with two independent surface electrodes coupled to independent data acquisition systems. The separation between the electrodes is comparable to the range of the 2 MeV He ions used in our experiments. This system allows us to integrate the total charge induced in the device by summing the signals from the independent electrodes and to measure the sharing of charge between the electrodes as a function of the ion strike location as a nuclear microprobe beam is scanned over the sensitive region of the device. It was found that for a given ion strike location the charge sharing between the electrodes allowed the beam-strike location to be determined to higher precision than the probe resolution. This result has potential application to the development of a deterministic doping technique where counted ion implantation is used to fabricate devices that exploit the quantum mechanical attributes of the implanted ions.     

Evaluation of influence of surface barrier in solid on ion reflection by bipartition model of ion transport

The influence of surface barrier of solid upon ion reflection was studied in a few papers of other authors by using the Monte-Carlo simulation. Based on the bipartition model of ion transport, a new analytical theory has been developed instead of the MC simulation, due to important implication of the effect for fusion research. In the present paper we have calculated the number reflection coefficients of H , D , He and T normally incident on C, Al and Cu for ion energy from several eV to one hundred keV respectively. Our computational results accorded with the MC simulation. The results have shown that the effect of surface barrier on ion reflection becomes evident when the energy of incident ions is lower than one keV. In particular, for the ion energy from several eV to one hundred eV, the discrepancies of number reflection coefficients can increase up to 0.1-0.3, showing this influence to be very important.     

3D mapping of individual cells using a proton microbeam

Various imaging techniques carried out with a nuclear microprobe make it possible to reveal by 2D mapping, the internal structure of isolated cells. An improvement of those techniques allows today 3D mapping of cells. STIM- and PIXE-Tomography have been recently implemented on the CENBG microbeam line. The performance offered by these methods, which are capable of resolving objects having diameters less then 100 μm, has been validated on reference specimens and on human cells from cultures. In addition to the fineness of the resolution, these techniques offer the advantage of performing volume analyses without prior cutting of the samples. The ultimate aim of this program of research is to perform 3D elemental chemical analysis of individual cells in the field of biomedicine.     

Etch-free formation of porous silicon by high-energy ion irradiation

In this study, porous silicon was fabricated without any chemical etching by self-ion implantation of crystalline Si performed at high temperature and at high fluences. The irradiated silicon samples, which remained crystalline under high temperature ion irradiation, exhibited an increased porous fraction with increasing sample temperature at a given fluence, up to the maximum tested temperature of 650 °C. Extremely high ion fluences of at least 2 × 10¹⁸ ions/cm² were necessary to produce significant void growth. Comparisons between the porous silicon structures and irradiation-induced porous networks in Ge, GaSb, and InSb are made, and differences in the formation conditions for these porous networks are discussed.     

离子注入α－Al_2O_3陶瓷材料的表面改性研究

研究了α－Ａｌ２Ｏ３单晶注入Ｎ＋后的力学性能变化。结果表明，注入剂量为１×１０１７Ｎ＋／ｃｍ２时，Ａｌ２Ｏ３的显微硬度提高了９２％；注入剂量为３×１０１７Ｎ＋／ｃｍ２时，在Ａｌ２Ｏ３表面形成非晶层，导致表面软化，显微硬度只是基体的５０％左右．离子注入在样品表面产生了高达￣１１５０ＭＰａ的压应力，材料的断裂韧性的改善与此有关，实验亦发现Ｎ＋离子注入后Ａｌ２Ｏ３的断裂韧性提高了９５％左右．ＳＥＭ分析同样证明Ｎ＋注入ａ－Ａｌ２Ｏ３后，其表面力学性能确实有所改善。     

Simulation of damage induced by ion implantation in Lithium Niobate

A simulation tool has been developed to engineer the damage formation in Lithium Niobate by ion irradiation with any atomic number and energy. Both nuclear and electronic processes were considered and, in particular, the dependence on the ion velocity of the electronic excitation damage efficiency has been taken into account. By using this tool it is possible both to draw damage nomograms, useful to qualitatively foresee the result of a given process, and to perform reliable simulations of the defect depth profiles, as demonstrated by the good agreement with the experimental data available in the literature.