不同粒径SiO2磨料混合对钴化学机械抛光的影响

针对钴互连化学机械抛光(CMP)高去除速率的要求,提出将不同粒径的 Si O₂ 组合作为磨料进行 CMP。对比了使用单一粒径与混合粒径 Si O₂ 磨料对钴去除速率的影响。结果表明,使用单一粒径磨料时,随着磨料粒径由 40 nm 增大到 130 nm,钴的去除速率先增大后减小,Si O₂ 粒径为 100 nm 时钴的去除速率最高,达到了 447 nm/min。将两种不同粒径的 Si O₂ 磨料混合使用能够显著提高钴的去除速率。将粒径为 40 nm 和 100 nm 的 Si O₂ 磨料按质量比 3∶1 混合使用时,钴的去除速率最高,达到了563 nm/min,抛光后钴的表面粗糙度(Sq)约为 1.05 nm。     

不同粒径纳米二氧化硅磨料对蓝宝石CMP去除机制的影响

采用不同粒径的纳米二氧化硅磨料对蓝宝石晶圆进行化学机械抛光(CMP).结合实验与量子化学参数的仿真计算,研究了磨料粒径对抛光后蓝宝石晶圆表面性能的影响及其材料去除机制.结果表明:在CMP过程中,纳米二氧化硅磨料与晶圆表面发生了主要基于磨粒表面羟基官能团与加工材料表面之间强相互作用的固相反应.提出了磨粒粒径影响固相反应强...     

胍离子对铜化学机械抛光的影响

对铜晶圆进行化学机械抛光(CMP),溶液组成和工艺条件为:胶体二氧化硅(平均粒径85 nm)5%(质量分数),30%H_2O_2 5 mL/L,胍离子(Gnd+,由碳酸胍GC或盐酸胍GC提供)适量,抛光压力5.2 kPa,抛头转速87 r/min,抛光盘转速93 r/min,抛光液体积流速300 mL/min,时间1 min。研究了抛光液中Gnd~+浓度对铜去除速率的影响,通过电化学方法及X射线光电子能谱分析了Gnd~+在铜表面的作用机制,探讨了Gnd~+对铜CMP后表面粗糙度的影响机制。一方面,随抛光液中GC浓度的升高,铜的去除速率增大,GC浓度为80 mmol/L时满足去除速率高于200 nm/min的要求;另一方面,Gnd+的引入不仅加剧了铜晶圆表面的化学腐蚀,而且使抛光液在铜晶圆表面的接触角增大,铜晶圆抛光后表面粗糙度增大。     

化学机械抛光过程中抛光液团聚问题的研究

在化学机械抛光(CMP)用二氧化硅浆料中加入不同质量分数的混合保湿剂(由体积比为1∶1的分析纯丙三醇和三乙醇胺混合而成),以解决CMP过程中抛光液易团聚的问题。结果表明,抛光液中加入保湿剂后团聚问题得到缓解。随保湿剂质量分数的增大,抛光液的团聚析出量减少,黏度增大,对蓝宝石晶圆的去除速率先增大后减小,晶圆抛光后的表面粗糙度逐渐增大。当保湿剂的质量分数为4%时,对蓝宝石晶圆进行CMP时的材料去除速率最大,为93.6 nm/min,抛光后晶圆的表面粗糙度为0.412 nm。     

蓝宝石衬底的化学机械抛光工艺研究

对蓝宝石衬底片的化学机械抛光进行了研究。系统地分析了蓝宝石抛光工艺过程的性能参数,通过大量实验,总结出了其影响因素并提出了优化方案。结果表明,采用粒径为40nm、低分散度的二氧化硅溶胶磨料并配合以适当参数进行抛光,可以获得良好的表面状态和较高的去除速率。能够有效地提高蓝宝石表面的性能及加工效率。     

磨料粒径对铝栅CMP去除速率和粗糙度的影响

在铝栅化学机械平坦化(CMP)中磨料直接影响去除速率和表面粗糙度。采用不同粒径的磨料配置抛光液对铝栅进行CMP实验,对去除速率和表面形貌测试结果进行分析。结果表明,去除速率与参与抛光的磨料颗粒数目和单个颗粒去除速率有关,表面粗糙度与单个磨料颗粒机械作用和抛光后磨料颗粒表面吸附有关,并对抛光液稳定性进行了研究。最终选用粒径70 nm,质量分数为5%的磨料,去除速率可达到181 nm/min,表面粗糙度为9.1 nm,对今后铝栅CMP的研究提供了参考。     

氧化剂对铝栅化学机械抛光的影响

氧化剂作为抛光液的组成成分,在铝栅化学机械抛光(CMP)中起到直接影响去除速率和表面粗糙度的重要作用。本文研究了氧化剂浓度对去除速率、表面粗糙度、电化学特性的影响,采用原子力显微镜和CHI600E电化学工作站,分别测量了材料的表面粗糙度和腐蚀电位。结果表明,去除速率与氧化剂浓度有关,表面粗糙度与通过氧化反应生成的氧化层有关,当氧化剂达到15mL/L时,去除速率可达到1700 nm/min,表面粗糙度为4.6 nm。     

粒径对二氧化硅消光粉应用性能的影响

研究了粒径对二氧化硅消光粉在涂料中应用性能的影响。结果表明,平均粒径越大,消光性能越好;粒径越小,透明性和防沉性越好。因此在选用消光粉时需要根据实际的使用要求来选择合适的消光粉。     

碳化硅化学机械抛光中金刚石磨粒与二氧化硅磨粒作用的微观模拟分析

采用反应力场(ReaxFF)分子动力学方法模拟分别以金刚石磨粒和二氧化硅磨粒对碳化硅进行化学机械抛光时的表面微观行为,探讨了这2种硬度不同的磨粒对碳化硅表面原子的去除机制.结果表明,二氧化硅磨粒在抛光过程中相比金刚石磨粒更容易发生化学反应,主要通过持续与碳化硅表面原子成键和断键来实现原子的去除.金刚石磨粒能够使碳化硅表...     

蓝宝石化学机械抛光液的研究进展

简介了蓝宝石化学机械抛光(CMP)的基本原理,从磨料、pH调节剂、表面活性剂、配位剂和其他添加剂方面概述了近年来蓝宝石CMP体系的研究进展,展望了蓝宝石CMP体系未来的研究方向。     

Chemical-mechanical polishing performance of core-shell structured polystyrene@ceria/nanodiamond ternary abrasives on sapphire wafer

Driven by electrostatic attraction, Ce⁴⁺ ions or/and positively charged detonation nanodiamond (DND) particles can absorb onto negatively charged polystyrene (PS) spherical colloids. Three types of core-shell structured composite abrasives, PS@CeO₂, PS@DND and PS@CeO₂/DND, can thus be assembled. When PS@CeO₂ and PS@DND were used to polish sapphire wafer at pad rotating speed of 120–150 r/min and load pressure of ~3 kg, the material removing rate (MRR) exceeded 1.0 μm h⁻¹, 10–20 % higher than unitary abrasives. The surface profile roughness (Ra) for wafer polished by these two composite abrasives was respectively 1.25 and 0.63 nm, which is superior to CeO₂ (Ra = 1.38 nm) and DND (Ra = 1.29 nm). When using PS@CeO₂/DND, the polishing interface area can be increased owing to the combined effect of elastic PS spheres and intensively coated CeO₂ and DND. Meanwhile, the synergistic mechanism of sapphire-CeO₂ chemical reaction and the strong mechanical abrasion of DND particles benefit the polishing efficiency. MRR for this ternary composite abrasive attained 1.4–1.7 μm h⁻¹ while sapphire can be smoothed to a sub-nanoscale roughness.     

Effect of particle size on mechanical properties of epoxy resin filled with angular-shaped silica

Effect of particle size on the mechanical properties of cured epoxy resins has been studied. Resin was filled with angular-shaped silica particles prepared by crushing fused natural raw quartz. These particles were sorted into six groups having different mean sizes ranging from 2–47 μm. Flexural and compressive moduli of the cured epoxy resin slightly decreased with decrease in the particle size of the silica, whereas tensile modulus slightly increased. Flexural and tensile strengths increased with decrease in particle size. Fractured surfaces were observed using scanning electron microscopy to clarify the initiation point of fracture.     

Surface planarization of zirconia ceramic achieved by polyacrylamide grafted nanodiamond composite abrasives through chemical mechanical polishing

Zirconia ceramics are the promising materials for cell phone backplanes in the 5G era, and smoother surfaces and higher removal efficiency are sought after for their precision machining. Although nanodiamond abrasives have high polishing rates, it is easy to bring mechanical scratches and pits on the ceramic surface because of their high hardness, resulting in degradation of the surface quality of the finished workpiece. Therefore, polyacrylamide grafted nanodiamond particles were prepared by solution polymerization method for polishing ceramic wafers. As confirmed by Fourier transform infrared spectroscopy (FTIR), the polyacrylamide has been grafted on the nanodiamond surface. According to the scanning electron microscopy (SEM) and particle size distribution, the composite abrasives have better dispersion than pure nanodiamond abrasives. The results of chemical mechanical polishing (CMP) experiments showed that the composite abrasives could reduce the average surface roughness (Sa, arithmetic mean height) of zirconia ceramic from 28.31 nm to 2.68 nm (scanning area is 500 μm × 500 μm), and the polishing rate remained high compared to pure nanodiamond abrasives, showing superior CMP performance. X-ray photoelectron spectroscopy (XPS) demonstrated that solid-phase chemical reactions occurred during the polishing process to form ZrSiO₄. Meanwhile, contact-wear model combined with contact angle testing indicates that the introduction of polyacrylamide increases the contact area of the nanodiamond on the zirconia wafer surface, thereby significantly enhanced the mechanical effect.     

Effect of hydroxy carboxylates as complexing agent on improving chemical mechanical polishing performance of M-plane sapphire and action mechanism analysis

As sapphire device performance continues to improve, greater challenges are posed to the chemical mechanical polishing (CMP) of sapphire, with its high degree of hardness and brittleness. M-plane sapphire substrates are not widely used because they are more difficult to process, despite having higher luminous efficiency than C-plane substrates. In this study, the effect of three hydroxyl carboxylates, namely potassium tartrate (PT), potassium citrate (Cit) and sodium gluconate (Gluc), as complexing agents on the CMP of M-plane sapphire was investigated to obtain a high material removal rate (MRR) and low root mean square surface roughness (Sq). First, the chemical reactivities of the three complexing agents were predicted with Material Studio (MS) software. The predicted results showed that the complexing ability of the three complexing agents was greatest for Gluc, followed by Cit, with PT having the least complexing ability. Experimental results confirmed that Gluc was the optimal complexing agent for the M-plane sapphire CMP. The mechanism of action during CMP was revealed by X-ray photoelectron spectroscopy (XPS) and infrared spectroscopy (FTIR). The results showed that the Al(OH)₄^? ions produced by the sapphire were complexed by Gluc to form the soluble complex Al(OH)₄^?/Gluc^?. At the same time, a solid phase reaction also occurred between the M-plane sapphire, SiO₂, and water during CMP, and Al₂Si₂O₇?2H₂O was generated. After polishing with the optimized slurry, the M-plane MRR was improved to 5.358 μm/h, a 50% improvement compared with the reference slurry, and the Sq decreased from 0.345 nm to 0.172 nm. These findings provide important guidance for the development of high-performance sapphire devices.     

Effect of sapphire particle size on transmittance and strength of sapphire glass composites prepared by melt infiltration

Abstract

Sapphire glass composites for dental applications were prepared by infiltrating glass melt into a presintered sapphire preform. Six different sapphire performs using powders with different particle sizes were prepared. After infiltrating glass into the porous sapphire preforms, their transmittance, strength and microstructure were examined. The infiltrated glass corroded the sapphire preform, and the dissolved aluminium ions reprecipitated on the sapphire grains during heat treatment for infiltration. A light transmittance of 10–40% at a wavelength of 550 nm was observed, which varied according to the particle size. Sample S 26·0, which was prepared using 26 μm sapphire powder, exhibited a light transmittance and biaxial strength of 35% and 230 MPa, making it suitable for use in dental crown materials. The maximum strength >450 MPa was obtained for the sample with sapphire particle size of 0·8 μm, when the glass was infiltrated at 1300°C for 720 min.     

化学机械抛光技术研究进展

通过回顾化学机械抛光技术的发展历史,概述了化学机械抛光作用机制与实际应用情况,着重阐述了几种重要抛光浆料(如CeO2、SiO2、Al2O3抛光浆料)的优缺点、抛光机理及其国内外新近制备方法,进一步展望了化学机械抛光技术的发展前景与新型抛光浆料的开发方向.     

Self-assembly preparation of popcorn-like colloidal silica and its application on chemical mechanical polishing of zirconia ceramic

Traditional mobile phone backplane materials are difficult to meet the requirements of the 5G era, and zirconia ceramic is one of the most promising backplane materials. However, its precision machining is difficult due to the hard and brittle nature. In this work, a novel popcorn-like colloidal silica was prepared by the self-assembly growth of nanoparticles for chemical mechanical polishing of the yttria-stabilized tetragonal zirconia ceramic sheets. The surface of the popcorn-like colloidal silica particles has a noticeably uneven shape, and the particle size distribution is uniform. The chemical mechanical polishing results show that the material removal rate of the prepared popcorn-like colloidal silica is increased by about 50% compared with the spherical colloidal silica, and the surface morphology is also obtained improvement. In the process of chemical mechanical polishing, the particles form multi-point contact with the ceramic sheet, resulting in an increase in the coefficient of friction, which is beneficial to the tribochemical reaction. In addition, multi-point contact can distribute the load, make the indentation shallower, and help reduce mechanical scratches. In general, the expected results are expected to provide experimental basis for the optimization of the structure of chemical mechanical polishing abrasive particles.     

Nano-scale surface of ZrO2 ceramics achieved efficiently by peanut-shaped and heart-shaped SiO2 abrasives through chemical mechanical polishing

Zirconia ceramics are regarded as the best development target for 5G mobile phone rear covers. However, it is necessary and urgent to improve the surface quality and processing efficiency of zirconia ceramics. Non-spherical silica abrasives were prepared by the KH550 induction method and were used in chemical mechanical polishing (CMP) of zirconia ceramics for the first time. While achieving low surface roughness of 1.9 nm, it has an efficient polishing rate of 0.31 μm/h which is superior to conventional abrasives. Silica particles are peanut-shaped and heart-shaped in the scanning electron microscopy image, and its distinctive morphology provides the possibility of its excellent polishing performance. X-ray photoelectron spectroscopy analysis shows that during the CMP process, silica abrasives and zirconia ceramic undergo a solid phase chemical reaction to form ZrSiO₄. At the same time, the contact wear model established in combination with the coefficient of friction indicates that the two-dimensional surface contact mode of non-spherical silica abrasives on the surface of zirconia ceramics greatly improves its mechanical effect.     

水泥颗粒分布对其使用性能的影响

研究了水泥的颗粒分布对I型硅酸盐水泥标准稠度用水量、凝结时间、水化热、强度、与外加剂适应性及砂浆干缩性能的影响。研究结果表明:同一比表面积的水泥,颗粒分布越窄,则标准稠度用水量越大,凝结时间越长,1d水化热越小,1d胶砂强度越低,与外加剂适应性越差,砂浆干缩率越大。随着比表面积增大,凝结时间缩短,1d水化热增大,强度提高,砂浆干缩率增大。当颗粒分布较窄时,随着比表面积增大,1d胶砂强度增幅不大,与外加剂适应性显著变差。