一种复合终端逆阻IGBT数值仿真分析

绝缘栅双极型晶体管（insulated gate bipolar transistor,IGBT）本身不具有反向阻断能力,因此在电路中通常与二极管组合使用。为降低使用成本,减小寄生电感,续流二极管与IGBT通过工艺集成在同一芯片上,由此提出了具有反向阻断能力的逆阻型IGBT。针对常规逆阻IGBT终端面积大的问题,提出了一种改进型复合终端结构,采用双掺杂场限环,在P型场限环旁边引入N型轻掺杂区。改进结构减小了耗尽区横向扩展速率,增强器件可靠性,节省终端面积占用并提高了终端效率。     

10 kV P沟道SiC IGBT终端结构优化设计与实现

提出采用五区多重场限环FRM-FLRs(five-region multistep field limiting rings)终端设计并流片,研制10 kV P沟道碳化硅绝缘栅双极晶体管SiC IGBT(silicon carbide insulated gate bipolar transistor)终端。通过Silvaco TCAD软件仿真,对比研究传统等间距场限环ES-FLRs(equally spaced field limiting rings)终端和五区多重场限环终端对器件击穿特性的影响。仿真结果表明,五区多重场限环终端具有更均衡的近表面电场分布,减缓电场集中,优化空间电荷区横向扩展,且击穿电压可达到14.5 kV,而等间距场限环终端击穿电压仅为7.5 kV。同时,分别对五区多重场限环终端,以及采用此终端结构的P沟道SiC IGBT进行流片验证。测试结果表明,五区多重场限环终端可以实现12.2 kV的击穿电压;P沟道SiC IGBT的击穿电压达到10 kV时,漏电流小于300 nA,并且栅源电压为-20 V,集电极正向电流为-10 A时,器件的正向导通压降为-8 V。     

高压VDMOS结终端技术研究

本文针对高压VDMOS器件的结终端技术进行研究。文中分析了场板、场限环、截止环、结终端扩展技术以及横向变掺杂的基本设计方式和提升器件耐压的机理，并设计了一款600V高压VDMOS的复合终端结构，经封测及可靠性验证，性能稳定。     

应用逆阻型IGBT的三相电流型PFC变流器

为了改善电流型PFC的性能,本文采用逆阻型IGBT而不是普通IGBT作为功率器件。在三相9kW的PFC样机中,对逆阻型IGBT的静态和动态性能进行了测试,测试结果显示逆阻型IGBT具有较低的通态压降和较高的反向阻断能力,这些特性对改善变流器性能有利。试验分析了逆阻型IGBT的损耗构成,得到了详细的计算公式。试验结果表明该变流器具有高功率因数和输入电流波形畸变小。     

具有直流故障阻断能力的混合型模块化多电平换流器

逆阻型MMC（RBSM-MMC）拓扑在处理直流侧故障电流时,下管逆阻型IGBT模块会出现较大的过电压,需满足极高的脉冲闭锁一致性,否则IGBT两端会承受极大的过电压,烧毁器件。提出了一种半桥-逆阻混合型MMC（RB-HBSM-MMC）拓扑,用于解决传统MMC的故障阻断能力和逆阻型MMC触发一致与尖峰电压的问题。在分析其混合拓扑结构及其故障阻断机理基础之上,在PSCAD/EMTDC仿真平台搭建双端MMC-HVDC系统。仿真结果表明：所提出的RB-HBSM-MMC能有效阻断直流侧故障电流,隔离故障。RB-HBSM-MMC相比于RBSM-MMC,既可以实现对直流侧故障电流的有效阻断并能转移瞬时尖峰电压,解决过电压问题,降低对系统触发一致性技术要求,具有较好的应用前景。     

FP-FLR结终端结构的模拟分析

用边界元素法开发成功了高压结终端通用模拟器ＢＲＥＡＫ,利用该软件对浮置金属场板与浮置场限环的复合终端结构进行了仿真计算,并与用ＴＭＡ ＭＥＤＩＣＩ４．０的仿真结果进行了比较,仿真结果与实验符合较好。     

用图解法综合优化设计场限环结构

依据主结电压、空间电荷层宽度与环间距、环宽度和表面电压的关系,提出了用图解法设计场限环结构参数的方法。其中考虑了ＳｉＯ２、柱面结、球面结等击穿电压对参数确定的限制。该方法具有简单明确、综合性、实用性强等特点。     

应用逆阻型IGBT的移相控制电流型全桥零电流开关DC/DC变换器

介绍了一种使用新型的逆阻型IGBT(RB-IGBT)的电流型移相控制的全桥ZCSDC/DC变换器。介绍了逆阻型IGBT结构和特点,和普通IGBT不同,此新型IGBT具有双向阻断能力,适用于电流型电路。在该文所提到的电路中,通过引入谐振元件和利用电路中原有的寄生参数如变压器漏感,同时加入开关管的开关重叠时间,可以使得IGBT获得零电流关断条件,消除由于IGBT关断时候拖尾电流造成的关断损耗。该文分析了变换器的工作原理以及零电流关断条件,最后通过一个4kW实验装置的实验结构验证了前面的分析。     

4H-SiC高压肖特基二极管研制

采用多重场限环终端实现了一种高压4H-SiC肖特基二极管。基于Medici仿真计算结果,并利用两环简化模型结构,给出了耐压5 800 V终端结构各个场限环之间的优化间距。终端整体仿真结果表明:该优化结构通过将耗尽区边界扩展,很好地抑制了结边缘部分的电场集中效应,击穿时所有场限环的峰值电场基本相同,达到了优化设计的目的。通过流片验证,采用该终端结构设计的4H-SiC肖特基势垒二极管击穿电压大于5 500 V,达到理想值的90%以上,充分验证了该终端设计方法的可行性。     

槽型SiC MPS二极管的优化设计

提出一种具有低反向泄漏电流和低导通电阻的SiC MPS二极管,它利用刻槽注入P区的方法突破SiC中P型离子注入深度的限制,同时采用一种新型非均匀原胞拓扑结构提高单极电流。阻断时,槽底注入的P区对肖特基结电场起到更好的屏蔽作用,减小器件反向漏电流;开态时,增大的肖特基结面积使得器件导通电阻减小。     

Using reverse-blocking IGBTs in power converters for adjustable-speed drives

A new semiconductor power device that is urgently needed particularly in power converter topologies, the reverse blocking insulated gate bipolar transistor (RB-IGBT), has been realized by adding minor changes to the structure of a standard IGBT to make it capable of withstanding reverse voltage. However, the switching behavior of the device's intrinsic diode during reverse recovery is not as good as a discrete IGBT and series diode implementation. This paper analyzes the use of this device in three power converter topologies that may benefit from it, namely: 1) the matrix converter, 2) the two-stage direct power converter (DPC), and 3) the three-level voltage source rectifier. A commutation method to override the poor reverse-recovery characteristic of the RB-IGBT intrinsic diode in a two-stage DPC is proposed. A loss analysis shows that by using RB-IGBTs the efficiency of the two-stage DPC becomes similar to a two-level voltage source converter.     

1200-V Low-Loss IGBT Module With Low Noise Characteristics and High dIC/dt Controllability

This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but also to reduce the low-current turn-on dI_C/dt of the IGBT. The new IGBTs with high turn-on dI_C /dt controllability and low turn-on power dissipation have been successfully developed by the reduction of Miller capacitance resulting from an optimization of the surface. The 1200-V 450-A IGBT module utilizing the new IGBT and optimized FWD chips has been able to realize 30% reduction of the switching power dissipation when compared to the conventional IGBT module under the operating condition to set the same noise emission level     

Ratings of semiconductors for AC drives

This paper discusses the characteristics and limitations of various power semiconductors used in motor controls and drives. Semiconductor types discussed include the insulated gate bipolar transistor (IGBT), transistor (bipolar and MOS device), SCR, gate-turn-off transistor (thyristor) (GTO), and diode. Important limitations, including voltage rating, current ratings, safe operating area, heat transfer characteristics, and limitations due to a particular device characteristic are discussed. The focus is on the IGBT; its advantages and disadvantages are discussed, as well as how it can be rated in a drive application     

IGBT集电极漏电流特性及影响分析

绝缘栅双极型晶体管(IGBT)集电极漏电流是评价其性能的一个重要电气参数,反映的是正向阻断特性,与阻断电压和温度相关.基于IGBT结构和PN结反向电流原理,分析了IGBT集电极漏电流的组成特性,在低温阶段以阻断电压引起的产生电流为主,在高温阶段以温度引起的扩散电流为主,低温至高温的转变温度约为125℃,并从热平衡角度分...     

Rated overload Characteristics of IGBTs for low-voltage and high-voltage devices

By a vertical shrink of the nonpunchthrough insulated gate bipolar transistor (NPT IGBT) to a structure with a thin n-base and a low-doped field stop layer a new IGBT can be realized with drastically reduced overall losses. In particular, the combination of the field stop concept with the trench transistor cell results in an almost ideal carrier concentration for a device with minimum on-state voltage and lowest switching losses. This concept has been developed for IGBTs and diodes from 600 V up to 6.5 kV. While the tradeoff behavior (on-state voltage V/sub CEsat/ or V/sub F/ to tail charge) and the overall ruggedness (short circuit, positive temperature coefficient in V/sub CEsat/, temperature independence in tail charge, etc.) is independent of voltage and current ratings the switching characteristics of the lower voltage parts (blocking voltage V/sub Br/<2 kV) is different in handling to the high-voltage transistors (V/sub Br/>2kV). With the HE-EMCON diode and the new field stop NPT IGBT up to 1700 V there is almost no limitation in the switching behavior, however, there are some considerations-a certain value in the external gate resistor has to be taken. High-voltage parts usually have lower current density compared to low-voltage transistors so that the "dynamic" electrical field strength is more critical in high-voltage diodes and IGBTs.     

一种中电压大功率IGBT模块行为模型

目前已有场终止型绝缘栅双极性晶体管(IGBT)行为模型以及仿真软件中的IGBT模型未专门针对中电压大功率IGBT模块搭建,不能准确模拟其区别于中小功率IGBT的行为特性。在已有行为模型基础上,提出引入IGBT基区存储电荷造成的等效电容及模块封装键合丝带来的寄生电感,考虑反并联PIN二极管行为模型,从而有针对性地实现了完整中电压大功率IGBT模块行为模型。同时提出了新的米勒电容函数拟合方法,量化分析行为模型完整开关过程中典型行为与模型参数的关系,通过较简便的方法实现了模型参数的提取。最后在Pspice环境下实现了一种3.3k V/1.5k A等级IGBT行为模型,并通过在Buck电路下仿真与实验波形对比证明了该行为模型的可行性和有效性。     

适用于电路仿真的IGBT模块暂态模型研究

高压IGBT与二极管构成IGBT模块已经广泛应用于柔性直流输电技术领域。然而现有仿真研究难以模拟IGBT模块中IGBT与二极管各自详细开关暂态特性及相互影响,因此提出一种适用于电路仿真的IGBT模块暂态模型及其参数通用提取方法。模型采用机理推导、电气等效、曲线拟合等方法在PSCAD、SABER等电路仿真平台实现,无需获取器件底层参数和求解复杂物理方程,不仅可以实现电路仿真中IGBT模块的各种运行状态,而且可以在纳秒级步长下模拟其电压电流尖峰、拖尾电流、米勒平台等开关暂态特性。通过与SABER中通用模型仿真结果及实验实测波形对比分析,验证了IGBT模块暂态模型和参数提取方法的正确性和通用性,为进一步将模型应用于柔性直流输电系统仿真、电磁干扰及损耗分析、控制策略等研究打下基础。     

基于等效电导率的压接型IGBT器件温度场仿真

压接型封装全控器件由于其具有无焊点、无引线、双面散热的特点,逐渐在大容量换流器中得到了广泛的应用,其可靠性以及寿命预测也引起了学术界和工业界的关注。本文提出了一种基于等效电导率的压接型绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)器件温度场有限元仿真方法,直接反映了压接型IGBT器件内部芯片发热功率随温度变化的特性,进一步提高了温度场仿真的准确性,为模块可靠性分析和寿命预测建立了仿真计算基础。此外,对某型号压接型IGBT器件进行MMC工况下的温度场仿真,得到了该工况下模块内部温度分布情况。     

一种新型的全桥零电压零电流开关PWM变换器

提出一种新型的FB-ZVZCS—PWM变换器拓扑，采用耦合电感构成辅助电路，结构简单、没有耗能元件或有源开关，不增加原边电流应力。新拓扑具有良好的通用性，对采用不同箝位方式如阻容吸收、次级无源箝位或有源箝位的全桥变换器均适用。变换器主开关管全部采用IGBT，开关频率大幅提高，功率密度、轻载效率及软开关负载范围显著改善，而变换器成本降低。给出了变换器拓扑结构、关键参数设计及实测波形，新拓扑已应用在3kW，350VDC变换器中。     

Voltage source inverter

A design optimization tool is developed for a three-phase voltage source inverter (VSI) with diode frontend rectifier. The insulated gate bipolar transistor (IGBT)-based pulsewidth modulation (PWM) voltage source inverter with diode front-end rectifier has become the converter of choice for three-phase ac-fed general-purpose industrial motor drives. The converter power stage, which mainly consists of the front-end rectifier, the inverter, the dc link capacitor, the harmonic and electromagnetic interference (EMI) filter, and the thermal management system, as shown in Figure 1 with a motor load, is the primary contributor to the overall converter cost and size. Since there are interdependencies and tradeoffs among components or subsystems in the power converter, it is very desirable to have a systematic methodology and tool for achieving a cost-optimized or size-optimized converter design while meeting the system performance requirement. A design tool will also reduce the development cycle and effort.