化学气相沉积铜薄膜研究进展

本文综术了集成电路工艺的Cu布线中Cu薄膜化学气相沉积(CVD)的研究背景,详细介绍了CVD生长Cu金属薄膜的国内外研究进展及CVD对前趋物的要求,并对前趋物的一些物理、化学性质进行了总结,最后,对薄膜沉积的计算机摸拟作了简要介绍。     

定向碳纳米管的化学气相沉积制备法

报道了一种简便有效的合成定向碳纳米管 (CNTs)的化学气相沉积 (CVD)制备方法。以铁为催化剂 ,乙炔为碳源 ,采用单一反应炉 ,直接在石英基底上沉积催化剂颗粒薄膜 ,成功合成了定向性好、管径均匀的高质量大密度的碳纳米管     

Cu上石墨烯的化学气相沉积法生长研究

利用自行搭建的化学气相沉积(CVD)设备在Cu箔衬底上成功的制备出石墨烯薄膜,并利用光学显微镜和拉曼光谱分析等手段对石墨烯薄膜的形貌和结构进行了表征.主要研究了Cu箔的表面处理和沉积过程的气体流量对石墨烯质量的影响,发现氨水处理Cu箔可以腐蚀Cu箔表面的各种杂质提高Cu箔的洁净度从而提高石墨烯的结晶质量,优化CH4和H2的气体流量可以提高石墨烯的单层性和均匀性.并最终在CH4∶H2=200∶0 sccm条件下,在氨水处理过的Cu箔上获得了面积1.5 cm×1.5 cm的均匀的单层石墨烯.     

反应器长径比对化学气相沉积SiC沉积动力学的影响

以三氯甲基硅烷(MTS)和H2为前驱体,在沉积温度900～1 050℃,H2和MTS摩尔比为4～20和滞留时间0.4～1 s下,采用化学气相沉积(CVD)工艺研究沉积反应器长径比分别为7∶6和7∶2时的碳化硅(SiC)沉积动力学.结果 发现,不同尺寸反应器中SiC沉积速率随工艺参数变化的规律性差异明显.长径比7∶6的反...     

化学气相沉积金刚石薄膜的摩擦学性能研究进展

介绍了化学气相沉积金刚石薄膜的的主要方法，着重讨论了金刚石的摩擦学性能研究，简要分析了化学气相沉积金刚石薄膜中存在的问题。     

化学气相沉积制备MoSi2涂层分析

主要介绍了目前化学气相沉积(CVD)制备MoSi2涂层或薄膜的几种方法,从反应原理和沉积产物结构等方面分析了各种方法的特点,提出了这些方法在制备MoSi2涂层过程中所存在的问题,并讨论了CVD制备MoSi2涂层应用于碳/碳复合材料高温抗氧化保护的可行性.     

石墨烯的化学气相沉积法制备及其表征

石墨烯是由sp2杂化的碳原子键合而成的具有六边形蜂窝状晶格结构的二维原子晶体,其具有电学、力学和光学等方面一系列优良性能,使得它在各个领域的应用一直被人们所关注。然而,石墨烯的工业化制备仍然面临着巨大的挑战。本文采用化学气相沉积法(CVD)制备石墨烯,并用拉曼光谱、高分辨率扫描电镜和X射线多晶衍射对其进行了分析和表征。研究结果表明,用CVD法制备石墨烯具有工业化的可能。     

新型微波等离子体化学气相沉积金刚石薄膜装置

微波等离子体化学气相沉积（ＭＰＣＶＤ）是制备金刚石薄膜的一种重要方法。为了获得金刚石薄膜的高速率大面积沉积，在国内首次研制成功了５ｋＷ带有石英真空窗的天线耦合水冷却不锈钢反应室式ＭＰＣＶＤ装置。初步用该装置成功在硅基片上沉积得到了金刚石薄膜。     

介质阻挡放电常压化学气相沉积技术及其在薄膜制备中的应用

介质阻挡放电(DBD)是一种可以在常压下工作的放电形式，以这种放电形式为离子源的介质阻挡化学气相沉积(DBD-CVD)技术可以以较高的反应物流量实现多种薄膜的沉积，因而有广阅的应用前景。综述了DBD技术的发展历史及相关理论，着重介绍了DBD-CVD技术及其应用现状，并提出展望。     

常压化学气相沉积法在玻璃上制备TiSi2薄膜的研究

高导电性TiSi2薄膜对低频电磁波有高反射率.在玻璃基片上成功制备TiSi2薄膜有望开发形成一种新型低辐射镀膜玻璃.本文结合工业在线和大面积生产的特点,以常压化学气相沉积法研究了TiSi2在玻璃基板上生长、制备及其与性能间的关系.研究发现:反应在温度低于680℃时,为反应控制;在高于680℃时,为传质控制.在700℃,Si/Ti摩尔比为3时,生成的TiSi2为低电阻的正交面心晶型(C54)TiSi2.Ti5Si3相和Si相的存在,对薄膜电阻的降低不利.TiSi2晶相含量越多,结晶越好,则电阻越小.     

Fabrication of thin films of bismuth selenide using novel single-source precursors by metal organic chemical vapor deposition

A metal-organic compound, Bi[(SePⁱPr₂)₂N]₃ has been synthesized and used as a single-source precursor for the deposition of bismuth selenide thin films via low-pressure metal-organic chemical vapor deposition. Crystalline thin films of rhombohedral Bi₂Se₃ have been deposited on glass substrates. The films have been characterized by X-ray powder diffraction, scanning electron microscopy and energy dispersive analysis of X-rays.     

Chemical vapor deposition of epitaxial garnet films

The chemical vapor deposition of single crystal metal oxides has recently been extended to the growth of certain epitaxial garnets, in particular YIG on YAG and GdIG on YAG. The light green, transparent films aresim3muthick and are limited in area only by the area of the available YAG seeds. On     

Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO₂ containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH₂(PMe₃)₄ (Me = CH₃) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.     

Chemical vapor deposition of doped TiO2 thin films

Niobium-, tantalum- and fluorine-doped TiO₂ films were made by atmospheric pressure chemical vapor deposition from titanium alkoxides mixed with niobium ethoxide, tantalum ethoxide and t-butyl fluoride respectively. 4% H₂ in N₂ was used as the carrier gas and the deposition temperatures were in the range 400–600°C. The resistivities of the films increased dramatically with film thickness. For highly doped films 1 μm thick resistivities as low as 0.01 Ω cm were achieved.     

Catalytic chemical vapor deposition of carbon nanotubes using Ni-La-O precursors

Carbon nanotubes (CNT) are synthesized by catalytic chemical vapor deposition with different compositions of Ni-La-O catalyst precursors obtained by citric acid complexometry. Only two compounds: LaNiO₃ (perovskite-type crystal structure, hexagonal system) and La₂NiO₄ (spinel-type crystal structure, orthorhombic system) in the obtained Ni-La-O catalyst precursors have the ability to grow CNT. Moreover, CNT obtained with the two different crystal structure catalyst precursors have different characteristics: different yield, pattern and oxidation resistance performance.     

Chemical vapor deposition and photoluminescent properties of polycrystalline AlN films

Thick polycrystalline aluminum nitride films have been grown by chemical vapor deposition using metallic aluminum and ammonium chloride. The films have been characterized by scanning electron microscopy and photoluminescence spectroscopy. The results have been used to analyze correlations between the main process parameters.     

Chemical vapor deposition of boron- and nitrogen-containing graphene thin films

Boron and nitrogen-incorporated graphene thin films were grown on polycrystalline Ni substrates by thermal chemical vapor deposition using separate boron- and nitrogen-containing feedstocks. Boron and nitrogen atoms were incorporated in the film in almost equal amounts and the total content reached ∼28%. The film predominantly consisted of separate graphene and boron nitride domains. Carrier concentration in the graphene domains was estimated to be about 1 × 10⁻³ e/atom (3.8 × 10¹² cm⁻²) from G band shift in Raman spectra.     

Chemical vapor deposition of copper–cobalt binary films

Chemical vapor co-deposition of Cu–Co films has been demonstrated using (1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)Cu(II) [Cu(hfac)₂] [hfac=hexafluoroacetylacetonate] and (acetylacetonate)Co(II) [Co(acac)₂] [acac=acetylacetonate] as precursors. The deposition was performed at the substrate temperature of 270°C in a warm-wall impinging jet type reactor. The precursor Co(acac)₂ was sublimed at 140°C to achieve reasonable precursor delivery rates and avoid decomposition of precursor in the sublimator. Films with varying Cu content from 17 wt.% to 98 wt.% were deposited by subliming Cu(hfac)₂ in the temperature range of 40–100°C with a fixed Co(acac)₂ delivery rate. The morphologies and crystallinities of the binary films were strongly dependent on the film stoichiometry. Overall, this study provides insights into the mechanism of Cu–Co binary film formation by CVD.     

Plasma-enhanced chemical vapor deposition of carbon films using dibromoadamantane

Carbon thin films are prepared from adamantane and dibromoadamantane by using a plasma-enhanced chemical vapor deposition method. Deposition rate for dibromoadamantane is approximately two times higher than that for pure adamantane. Infrared spectra of the films indicate that adamantane units are incorporated in the films, although higher electron temperature results in disorder in the films. The films prepared from dibromoadamantane have higher thermal stability, higher hardness and Young modulus than those from pure adamantane. Permittivity (= 3-4) of the dibromoadamantane films is higher than that (= 2-3) of pure adamantane films, which is regarded as a result of incorporation of bromine atoms and C=C bonds having higher polarizability according to the structural analysis of the films. Possible solution methods are proposed for reducing inclusion of such unfavorable chemical species and chemical bonds.