Mixed $${L}_{1}$$ norm and $${L}_{2}$$L2 norm regularized sparsity adaptive matching pursuit algorithm

The sparsity adaptive matching pursuit (SAMP) algorithm has an advantage of reconstructing signals without the prior information of the sparsity level. However, the required computational power is high and the reconstruction performance is not satisfied for perturbed systems. This is because this algorithm is based on the expectation maximization algorithm. Also, a pseudo-inverse operation of the matrix is employed to select the element candidates of the sensing matrix in each iteration. In this paper, a mixed \(L_{1}\) norm and \(L_{2}\) norm regularized algorithm is proposed to address these issues. Similar to the SAMP algorithm, the regularized algorithm also reconstructs the signals without the prior information of the sparsity level. Different from the SAMP algorithm, the element candidates of the sensing matrix are selected by the \(L_{2}\) norm strategy in each iteration. Experiments are performed on an ideal simulation system, a perturbed simulation system and real image reconstruction. Simulation and real image reconstruction experimental results indicate that the regularized algorithm has lower computational power than the SAMP algorithm. Also, the proposed algorithm has better reconstruction performance on the perturbed system compared to the SAMP algorithm.     

Electronic Structure and Thermoelectric Properties of Pseudoquaternary \hbox{Mg}_{2}\hbox{Si}_{1-x-y}\hbox{Sn}_{x}\hbox{Ge}_{y}-Based Materials

A theoretical study is presented on complex pseudoternary Bi-doped \(\hbox{Mg}_{2}\hbox{Si}_{1-x-y}\hbox{Sn}_{x}\hbox{Ge}_{y}\) materials, which have recently been revealed to reach high thermoelectric figures of merit (ZT) of ～1.4. Morphological characterization by scanning electron microscopy and energy-dispersive x-ray spectroscopy indicated that the investigated samples were multiphase and that the alloy with nominal composition \(\hbox{Mg}_{2}\hbox{Si}_{0.55}\hbox{Sn}_{0.4}\hbox{Ge}_{0.05}\) contained three phases: \(\hbox{Mg}_{2}\hbox{Si}_{0.35}\hbox{Sn}_{0.6}\hbox{Ge}_{0.05}\) (Sn-rich phase), \(\hbox{Mg}_{2}\hbox{Si}_{0.65}\hbox{Sn}_{0.3}\hbox{Ge}_{0.05}\) (Si-rich phase), and \(\hbox{Mg}_{2}\hbox{Si}_{0.15}\hbox{Sn}_{0.5}\hbox{Ge}_{0.35}\) (Ge-rich phase). The electronic structure of all these phases was calculated in the framework of the fully charge self-consistent Korringa–Kohn–Rostoker method with the coherent potential approximation (KKR-CPA) to treat chemical disorder. Electron transport coefficients such as the electrical conductivity, thermopower, and the electronic part of the thermal conductivity were studied by combining the KKR-CPA technique with Boltzmann transport theory. The two-dimensional (2D) plots (as a function of electron carrier concentration and temperature), computed for the thermopower and power factor, well support the large thermoelectric efficiency detected experimentally. Finally, employing the experimental value of the lattice thermal conductivity as an adjustable parameter, it is shown that ZT ≈ 1.4 can be reached for an optimized Bi content near T ≈ 900 K in case of the nominal composition as well as the Sn-rich phase. The question of the effect of disorder on the convergence of the conduction bands and thus the electron transport properties is addressed through detailed examination of the Fermi surfaces.     

Anisotropic Thermopower of the Kondo Insulator \hbox {CeRu}_4\hbox {Sn}_6

The intermetallic compound \(\hbox {CeRu}_4\hbox {Sn}_6\) has been tentatively classified as Kondo insulator. This class of material, especially non-cubic representatives, is not yet fully understood. Here we report thermopower measurements on single-crystalline \(\hbox {CeRu}_4\hbox {Sn}_6\) between 2 K and 650 K, along the main crystallographic directions. Large positive thermopower is observed in the directions along which the hybridization is strong and a Kondo insulating gap forms. A negative contribution to the thermopower dominates for the crystallographic \(c\) axis where hybridization is weak and metallicity prevails.     

Extended Robust \mathcal{H}_{2} and \mathcal{H}_{\infty} Filter Design for Discrete Time-Invariant Linear Systems with Polytopic Uncertainty

This paper is concerned with the problem of robust $\mathcal{H}_{2}$ and $\mathcal{H}_{\infty}$ filter design for discrete-time linear time-invariant systems with polytopic parameter uncertainties. Less conservative robust $\mathcal{H}_{2}$ and $\mathcal{H}_{\infty}$ filter design procedures are proposed in terms of single-parameter minimization problems with linear matrix inequality constraints. To this end, we generalize the filter structures available in the literature to date in such a way that the filter’s next state is built by summing the filter’s states over several samples from the past to the present. For stability of the filtering error system, the homogeneous polynomial parameter-dependent Lyapunov functions are employed. Finally, illustrative examples are given to demonstrate the merits of the proposed methods.     

Hybrid opto-digital signal processing in 112 Gbit/s DP-16QAM and DP-QDB transmission for long-haul large-$$\hbox {A}_\mathrm{eff}$$ pure-silica-core fiber links

In this work, we investigate the energy efficiency in optical code division multiplexing access (OCDMA) networks with forward error correction (FEC). We have modeled the energy efficiency considering the capacity of information transmitted and the network power consumption. The proposed network power consumption model considers the optical transmitter, receiver, optical amplifiers, FEC and network infrastructure as encoders, decoders, star coupler and network control in the overall optical power network consumption balance. Furthermore, an expression relating the signal-to-noise-plus-interference ratio gain for forward error correction with low-density parity-check code scheme considering the power consumption and bandwidth occupancy has been derived. Numerical results for OCDMA networks with aggregated FEC procedure have revealed the viability of the FEC deployment aiming to increase the overall energy efficiency of OCDMA networks.     

Energy-efficient CMOS voltage level shifters with single- $$\hbox {V}_{{DD}}$$ V DD for multi-core applications

Analog Integrated Circuits and Signal Processing - The never-ending demands for battery-powered applications are driven by technological advances in the field of low power digital CMOS circuits....     

A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance $hbox{In}_{0.52}hbox{Al}_{0.48}hbox{As}hbox{/}hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}$ p-HEMTs

We investigated 60-nm In_0.52Al_0.48As/In_0.53Ga_0.47As pseudomorphic high-electron mobility transistors (p-HEMTs) fabricated by using a Ne-based atomic-layer-etching (ALET) technology. The ALET process produced a reproducible etch rate of 1.47 Aring/cycle for an InP etch stop layer, an excellent InP etch selectivity of 70 against an In_0.52Al_0.48As barrier layer, and an rms surface-roughness value of 1.37 Aring for the exposed In_0.52Al_0.48As barrier after removing the InP etch stop layer. The application of the ALET technology for the gate recess of 60-nm In_0.52Al_0.48As/In_0.53Ga_0.47As p-HEMTs produced improved device parameters, including transconductance (G_M), cutoff frequencies (f_T)> and electron saturation velocity (vsat) in the channel layer, which is mainly due to the high etch selectivity and low plasma-induced damage to the gate area. The 60-nm In_0.52Al_0.48As/In_0.53Ga_0.47As p-HEMTs fabricated by using the ALET technology exhibited G_M,_Max = 1-17 S/mm, f_T = 398 GHz, and v_sat = 2.5 X 10⁷ cm/s.     

Low Turn-On Voltage and High-Current $hbox{InP}/ hbox{In}_{0.37}hbox{Ga}_{0.63}hbox{As}_{0.89}hbox{Sb}_{0.11}/hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ Double Heterojunction Bipolar Transistors

We report on the dc and microwave characteristics of an $ hbox{InP/In}_{0.37}hbox{Ga}_{0.63}hbox{As}_{0.89}hbox{Sb}_{0.11}/hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic $hbox{In}_{0.37}hbox{Ga}_{0.63}hbox{As}_{0.89}hbox{Sb}_{0.11}$ base reduces the conduction band offset $Delta E_{C}$ at the emitter/base junction and the base band gap, which leads to a very low $V_{rm BE}$ turn-on voltage of 0.35 V at 1 $hbox{A/cm}^{2}$ . A current gain of 125 and a peak $f_{T}$ of 238 GHz have been obtained on the devices with an emitter size of $hbox{1}times hbox{10} muhbox{m}^{2}$, suggesting that a high collector average velocity and a high current capability are achieved due to the type-II lineup at the InGaAsSb/InGaAs base/collector junction.      

A matrix-based IRLS algorithm for the least $${l}_{p}$$ l p -norm design of 2-D FIR filters

Multidimensional Systems and Signal Processing - Fast design of two-dimensional FIR filters in the least $${l}_{p}$$ -norm sense is investigated in this brief. The design problem is first...     

\mathcal{H}_{\infty} Filtering for Short-Time Switched Discrete-Time Linear Systems

In this paper, the $\mathcal{H}_{\infty}$ filtering problem for a class of short-time switched discrete-time linear systems is investigated. For such systems, switching always occurs in some short interval. Since the error state may attain large unacceptable values in short-time switching intervals, besides the asymptotic stability of error dynamics, the boundedness of error state is also significant for short-time switched systems. Thus the designed filter is composed of two parts: asymptotic filter, based upon the existing results, ensures the asymptotic stability of the system during normal, relatively long interval, and finite-time filter ensures system to be finite-time bounded during the short interval of switching, which is the main concern in this paper. By introducing the concept of finite-time boundedness, the proposed filter is formulated as a set of sub-filters ensuring the error dynamics $\mathcal{H}_{\infty}$ finite-time bounded in the short switching interval. Finally, a numerical example is provided to illustrate the effectiveness of this approach.     

In situ Bandgap Determination of the GaAsN Nanolayer Prepared by Low-Energy $${text{N}}_{2}^{ + }$$ Ion Implantation

Semiconductors - An approach to solving the problem of the in situ bandgap determination in the extremely thin and chemically active nitride nanolayers fabricated in high vacuum on the n-GaAs...     

Fabrication and Properties of $hbox{Pt}/hbox{Bi}_{3.15}hbox{Nd}_{0.85} hbox{Ti}_{3}hbox{O}_{12}/breakhbox{HfO}_{2}/hbox{Si}$ Structure for Ferroelectric DRAM (FEDRAM) FET

Metal–ferroelectric–insulator–semiconductor (MFIS) capacitors with 400-nm-thick $hbox{Bi}_{3.15}hbox{Nd}_{0.85}hbox{Ti}_{3}hbox{O}_{12}$ (BNdT) ferroelectric film and 4-nm-thick hafnium oxide $(hbox{HfO}_{2})$ layer on silicon substrate have been fabricated and characterized. It is demonstrated that the $hbox{Pt}/hbox{Bi}_{3.15}hbox{Nd}_{0.85}hbox{Ti}_{3}hbox{O}_{12}/ hbox{HfO}_{2}/hbox{Si}$ structure exhibits a large memory window of around 1.12 V at an operation voltage of 3.5 V. Moreover, the MFIS memory structure suffers only 10% degradation in the memory window after $hbox{10}^{10}$ switching cycles. The retention time is 100 s, which is enough for ferroelectric DRAM field-effect-transistor application. The excellent performance is attributed to the formation of well-crystallized BNdT perovskite thin film on top of the $ hbox{HfO}_{2}$ buffer layer, which serves as a good seed layer for BNdT crystallization, making the proposed $hbox{Pt}/hbox{Bi}_{3.15}hbox{Nd}_{0.85}hbox{Ti}_{3}hbox{O}_{12}/ hbox{HfO}_{2}/hbox{Si}$ suitable for high-performance ferroelectric memories.      

$${{mathcal H}_{infty}}$$ control of linear multidimensional discrete systems

This paper presents a comprehensive investigation on the H_￥{{mathcal H}_{infty}} control problem of linear multidimensional (nD) discrete systems described by the nD Roesser (local) state-space model. A Bounded Real Lemma consisting of a series of conditions is first established for general nD systems. The proposed nD conditions directly reduce to their 1D counterparts when n = 1, and besides several sufficient conditions which include the existing 2D results as special cases, some necessary and sufficient conditions are also shown to explore further insights to the considered problem. By applying a linear matrix inequality (LMI) condition of the nD Bounded Real Lemma, the nD H_￥{{mathcal H}_{infty}} control problem is then considered for three kinds of control laws, namely, static state feedback (SSF) control, dynamic output feedback (DOF) control and static output feedback (SOF) control, respectively. The nD H_￥{{mathcal H}_{infty}} SSF and DOF control problems are formulated in terms of an LMI and LMIs, respectively, and thus tractable by using any available LMI solvers. In contrast, the solution condition of the nD H_￥{{mathcal H}_{infty}} SOF controller is not strictly in terms of LMIs, therefore an iterative algorithm is proposed to solve this nonconvex problem. Finally, numerical examples are presented to demonstrate the application of these different kinds of nD H_￥{{mathcal H}_{infty}} control solutions to practical nD processes as well as the effectiveness of the proposed methods.     

Determination of Work Functions in the $hbox{Ta}_{1 - x}hbox{Al}_{x}hbox{N}_{y}/hbox{HfO}_{2}$ Advanced Gate Stack Using Combinatorial Methodology

Combinatorial methodology enables the generation of comprehensive and consistent data sets, compared with the ldquoone-composition-at-a-timerdquo approach. We demonstrate, for the first time, the combinatorial methodology applied to the work function (Phi_m) extraction for Ta_1-xAl_xN_y alloys as metal gates on HfO₂, for complementary metal-oxide-semiconductor applications, by automated measurement of over 2000 capacitor devices. Scanning X-ray microdiffraction indicates that a solid solution exists for the Ta_1-xAl_xN_y libraries for 0.05 les x les 0.50. The equivalent oxide thickness maps offer a snapshot of gate stack thermal stability, which show that Ta_1-xAl_xN_y alloys are stable up to 950^degC . The Phi_m of the Ta_1-xAl_xN_y libraries can be tuned as a function of gate metal composition over a wide (0.05 les x les 0.50) composition range, as well as by annealing. We suggest that Ta_0.9Al_0.1N_1.24 gate metal electrodes may be useful for p-channel metal-oxide-semiconductor applications.     

Enhancement-Mode Buried-Channel $hbox{In}_{0.7} hbox{Ga}_{0.3}hbox{As/In}_{0.52}hbox{Al}_{0.48}hbox{As}$ MOSFETs With High- $kappa$ Gate Dielectrics

The operation of long- and short-channel enhancement-mode In_0.7Ga_0.3As-channel MOSFETs with high-k gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 mum, the long-channel devices have V_t= +0.25 V, a subthreshold slope of 150 mV/dec, an equivalent oxide thickness of 4.4 +/ - 0.3 nm, and a peak effective mobility of 1100 cm²/Vldrs. For a gate length of 260 nm, the short-channel devices have V_t=+0.5 V and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.     

RF and Logic Performance Improvement of $ hbox{In}_{0.7}hbox{Ga}_{0.3}hbox{As}/hbox{InAs}/hbox{In}_{0.7}hbox{Ga}_{0.3}hbox{As}$ Composite-Channel HEMT Using Gate-Sinking Technology

Eighty-nanometer-gate In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As composite-channel high-electron mobility transistors (HEMTs), which are fabricated using platinum buried gate as the Schottky contact metal, were evaluated for RF and logic application. After gate sinking at 250degC for 3 min, the device exhibited a high g_m value of 1590 mS/mm at V_d = 0.5 V, the current-gain cutoff frequency f_T was increased from 390 to 494 GHz, and the gate-delay time was decreased from 0.83 to 0.78 ps at supply voltage of 0.6 V. This is the highest f_T achieved for 80-nm-gate-length HEMT devices. These superior performances are attributed to the reduction of distance between gate and channel and the reduction of parasitic gate capacitances during the gate-sinking process. Moreover, such superior performances were achieved through a very simple and straightforward fabrication process with optimal epistructure of the device.     

P-Channel Tri-Gate FinFETs Featuring $hbox{Ni}_{1 - y}hbox{Pt}_{y} hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

We report the integration of nickel platinum germanosilicide (Ni_1-yPt_ySiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni_1-yPt_ySiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni_1-yPt_ySiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (Phi_P ^B) among the candidates evaluated. The low Phi_P ^B(0.309 eV) provides a 15% reduction in series resistance R_series. With a superior morphological stability and reduced R_series, FinFETs integrated with contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts.     

A New Linearized CCII-Based Fully Differential CMOS Transconductor Used for \hbox {G}_\mathrm{m}-C Active Filters Implementation

The paper presents a new linearized, of high performance, fully differential transconductor, based on class AB second generation current conveyor (CCII) in CMOS technology. The proposed circuit is composed by two positive CCII cells connected in series and a common mode feedback loop. Unlike other CMOS circuits on the basis of CCII reported in the literature, the proposed transconductor cell allows to obtain a higher transconductance value, an improved linearity and operates at high frequency for a 3.3 V supply voltage. As an application, the new transconductor cell in CMOS technology is used for designing a 4th order differential $\hbox {G}_\mathrm{m}$ -C low-pass filters in different approximations (Butterworth and Chebyshev) operating up to 300 MHz cut-off frequency. The simulations performed in 130 nm CMOS process confirm the theoretical results.     

Low-Voltage and High-Speed Operations of 30-nm-Gate Pseudomorphic $hbox{In}_{0.52}hbox{Al}_{0.48}hbox{As}/hbox{In}_{0.7}hbox{Ga}_{0.3} hbox{As}$ HEMTs Under Cryogenic Conditions

In this letter, we fabricated 30-nm-gate pseudomorphic In_0.52 Al_0.48As/In_0.7Ga_0.3As HEMTs with multilayer cap structures to reduce source and drain parasitic resistances; we measured their dc and radio-frequency characteristics at 300, 77, and 16 K under various bias conditions. The maximum cutoff frequency fT was 498 GHz at 300 K and 577 GHz at 77 K. The maximum fT exceeded 600 GHz at 16 K. Even at a drain-source voltage V _ds of 0.4 V, we obtained an fT of 500 GHz at 16 K. This indicates that cryogenic HEMTs are favorable for low-voltage and high-speed operations. Furthermore, the present 30-nm-gate HEMTs at 300 K show almost the same fT values at the same dc-power dissipation as compared to 85-nm-gate InSb-channel HEMTs. The improvement of the maximum-oscillation-frequency f _max values was also observed at 77 and 16 K.