共查询到20条相似文献,搜索用时 140 毫秒
1.
刘同娟 《电子工业专用设备》2008,37(10)
FIB-SEM-Ar"三束"显微镜在FIB/SEM装置的平台上附加了降低样品损伤的低能Ar离子枪,首次实现了通过一台仪器完成高质量的透射电子显微镜TEM的样品制备.简化了样品整个加工的过程,同时大大提高了加工精度和工作效率.对"三束"显微镜做了介绍. 相似文献
2.
集成电路制造工艺技术种类繁多,包括光刻、刻蚀、氧化、扩散、溅射、封装等。作为代表性的先进工艺技术是电子束、离子束和光子束加工技术,俗称三束技术。对三束技术做了介绍。 相似文献
3.
4.
单级透镜聚焦离子束系统的研究 总被引:1,自引:0,他引:1
建立了一台简单实用的单级透镜聚焦离子束(FIB)系统。该系统采用优越的Ca ̄+液态金属离子源(LMIS)和单级O-S透镜,在束能为20keV、束流为300pA时,束径达到0.3μm。改进了束斑的测量方法。研究了影响束斑的各种因素。该系统既可用来作为扫描离子显微镜,又可作为亚微米加工工具。文中给出了在该系统上得到的样品显微图像和刻蚀图形的结果。 相似文献
5.
6.
7.
8.
由中国电子学会生产技术学会三束学组和中国电子学会半导体与集成技术学会三束与超微细加工学组联合举行的我国第二届电束离子束光子束及超微细工艺学术年会于;19够年10月28日至1982年n月1日在江苏省常州市举行。出席这次年会的有来自全国从事三束技术研究开 相似文献
9.
10.
室温条件下 ,用离子束外延设备制备 ( Ga,Gd,As)样品 ,X射线衍射 ( XRD)结果表明除了 Ga As衬底峰 ,没有发现其他新相的衍射峰。俄歇电子能谱 ( AES)分析了样品中元素随深度的变化 ,不同样品中元素的分布有着不同的特点。并运用原子力显微镜 ( AFM)研究了样品表面的形貌特点 ,表明样品表面的粗糙度与 Gd注入过程中在样品表面沉积的多少有关。运用交变梯度磁强计 ( AGM)对薄膜进行磁性分析 ,结果表明有的样品在室温条件下出现铁磁性 ,但金属钆本身具有室温铁磁性 ,因而需要进一步分析。 相似文献
11.
12.
聚焦离子束( FIB)与扫描电子显微镜( SEM)耦合成为FIB-SEM双束系统后,通过结合相应的气体沉积装置,纳米操纵仪,各种探测器及可控的样品台等附件成为一个集微区成像、加工、分析、操纵于一体的分析仪器。其应用范围也已经从半导体行业拓展至材料科学、生命科学和地质学等众多领域。本文介绍了双束系统中的一些关键概念及基本原理并综述了其在材料科学领域的一些典型应用,包括透射电镜( TEM)样品制备,微纳尺度力学测试样品制备以及材料三维成像及分析。 相似文献
13.
14.
Heiko Stegmann V. Burak Özdöl Peter A. van Aken Pavel Potapov 《Microelectronic Engineering》2008,85(10):2169-2171
Chemical bonds in low-κ dielectric materials can be studied at nanometer spatial resolution using electron energy loss spectroscopy (EELS) in a monochromated transmission electron microscope (TEM). However, it is unknown to what extent TEM sample preparation and exposure to the electron beam during the measurement alter the original chemical bond state in these materials. Therefore, we are assessing the effect of different TEM sample preparation methods and beam conditions in a comparative study on low-κ dielectric materials. 相似文献
15.
透射电镜样品的厚度是透射电镜(TEM)表征中一个重要参数,快速准确地判断样品厚度是制备高质量样品的前提.本文通过使用聚焦离子束(FIB)制备了带有厚度梯度的透射电镜样品(Si、SrTiO3和LaAlO3),并提出两种制样过程中快速判断厚度的方法.第一种通过扫描电子显微镜(SEM)的衬度变化经验地判断样品的厚度;第二种是用FIB在样品边缘切一个斜边,通过SEM测量斜边侧面的宽度用几何方法推断样品的厚度.这两种方法都通过会聚束电子衍射(CBED)和电子能量损失谱(EELS)测量的厚度作为检验标准.对比认为,样品较薄时用SEM衬度测厚比较合适;样品比较厚时用几何方法测量比较直接. 相似文献
16.
《Microelectronics Reliability》2014,54(9-10):1779-1784
Gallium focused ion beam (Ga-FIB) systems have been used historically in the semiconductor industry for circuit edit. Significant efforts have been invested to improve the performance of Ga-FIB. However, as the dimensions of integrated circuits continue to shrink, Ga-FIB induced processes are being driven to their physical limits. A helium ion beam offers high spatial resolution imaging as well as precise ion machining and sub-10 nm nanofabrication capabilities because the probe size can be brought to as small as 0.25 nm. However, it is limited by its relatively low material removal rate. Recently, the new Zeiss Orion-NanoFab microscope provides multiple ion beams (He, Ne and Ga as an option) into one platform and promotes the further studies of He and Ne induced deposition and etching processes to compare with a Ga ion beam. Because of the mass difference between He, Ne and Ga ions, the interactions of ions with sample surface and precursor molecules result in different sputtering rates, implantation and deposition yields. This presentation gives an overview of our current studies using this new platform to deposit or mill nanostructures for circuit edit. 相似文献
17.
18.
A new technique has been developed for the three-dimensional structure characterisation of a specific site at atomic resolution. In this technique, a focused ion beam (FIB) system is used to extract a specimen from a desired site as well as to fabricate the electron transparent specimen. A specimen holder with a specimen stage rotation mechanism has also been developed for use with both an FIB system and a high-resolution transmission electron microscope (TEM). The specimen holder allows both the FIB milling of a specimen and its observation in TEM without remounting the specimen from the specimen holder. A specimen for the three-dimensional TEM observation is extracted using the FIB micro-sampling technique and shaped into a pillar to mount on a tip of a needle stub enabling a multidirectional observation. The technique was applied to the multidirectional observation of the crystal structure of an Si single crystal at atomic resolution. The crystal lattice fringes of the two Si(111) planes with distances of 0.31 nm as well as the lattice fringes of the Si(200) with distances of 0.19 nm were clearly observed. 相似文献
19.
研究了使用聚焦离子束(FIB)方法制备低k介质的TEM样品时离子束参数对介质微观形貌的影响,发现低k介质的微观形貌与离子束参数具有较强的相关性。传统大离子束流、高加速电压的FIB参数将导致低k介质多孔性增加、致密度下降;且k值越低,离子束参数影响越大。对于亚65nm工艺中使用的k值为2.7的介质,当离子束流减小到50pA、加速电压降低到5kV时,FIB制样方法对介质致密度的影响基本可忽略,样品微观形貌得到了显著改善;而对于65nm工艺中使用的k值为3.0的介质,其微观形貌受离子束参数的影响则相对较小。 相似文献