1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器

本文在国内首次报道了采用直接刻蚀有源区技术在应变多量子阱有源区结构基础上制作了１．３μｍＩｎＧａＡｓＰ／ＩｎＰ部分增益耦合ＤＦＢ激光器，器件采用全ＭＯＶＰＥ生长，阈值电流１０ｍＡ，边模抑制比（ＳＭＳＲ）大于３５ｄＢ，在端面未镀膜情况下器件单纵模成品率较高     

高温单模工作的1.3μm应变MQW增益耦合DFB激光器

１．３μｍ应变ＭＱＷ增益耦合的ＤＦＢ激光器，在温度高达１２０℃时实现了单模和高功率工作。由于增益耦合效应，使两种布拉格模式存在着很大的模态端面损耗率，从而使激射波长保持了稳定，通过室温时的激射波长对材料益峰值的长波长侧的失谐，使阀值电流受温度的影响很小，这就有效地补偿了较高温度时的波导损耗。在某些温度范围内（取决于失谐值），能实现无限特性温度Ｔ０。     

AlGaInAs/InP应变补偿多量子阱激光器

为了优化在长距离光纤通讯系统中采用的1.31μm波长的量子阱激光器,对AlGaInAs/InP材料的有源区应变补偿的量子阱激光器进行了设计研究。采用应变补偿的方法,根据克龙尼克-潘纳模型理论计算出量子阱的能带结构,设计出有源区由1.12%的压应变AlGaInAs阱层和0.4%的张应变AlGaInAs垒层构成。使用ALDS软件对所设计出的器件进行了建模仿真,对其进行了阈值分析和稳态分析。结果表明,在室温25℃下,该激光器具有9mA的低阈值电流和0.4W/A较高的单面斜率效率;在势垒层采用与势阱层应变相反的适当应变,可以降低生长过程中的平均应变量,保证有源区良好的生长,改善量子阱结构的能带结构,提高对载流子的限制能力,降低阈值电流,提高饱和功率,改善器件的性能。     

应变多量子阱DFB激光器有源区的优化设计

利用一个简单模型对1.55μm波长In1-x-yGayAlxAs MQW DFB激光器的阱数和腔长进行了优化,模拟得到了最高工作温度达550～560K,张弛振荡频率在30GHz以上的低阈值MQW DFB.     

应变多量子阱DFB激光器有源区的优化设计

利用一个简单模型对 1.5 5μm波长 In1 - x - y Gay Alx As MQW DFB激光器的阱数和腔长进行了优化 ,模拟得到了最高工作温度达 5 5 0～ 5 6 0 K,张弛振荡频率在 30 GHz以上的低阈值 MQW DFB.     

1.3μm混合应变量子阱激光器偏振特性分析

本文报道了采用混合应变量子阱作为有源区的激光器,并对其进行了测试和分析．偏振Ｐ－Ｉ曲线表明这种激光器的ＴＥ和ＴＭ激射模式分别对应于不同的阈值电流,ＴＭ模式的阈值电流在一定温度范围内随温度升高而降低,ＴＭ模式的斜率效率和总的斜率效率在一定温度范围内随温度升高而升高．测试了不同电流和温度下的偏振激射谱,两种激射谱随电流和温度改变都有很大变化,表明ＴＥ和ＴＭ激射模式之间有强烈的互作用．我们认为可能是由载流子分布与强激光辐射之间的非线性效应引起的．     

低阈值InGaAs-GaAs应变层多量子阱激光器

采用分子束外延(MBE)和二次液相外延技术(LPE)研制出InGaAs-CaAs折射率缓变分别限制应变层多量子阱(GRINSCH-STL-MQW)掩埋异质结(BH)激光器.在宽接触阈值电流密度1 kA/cm~2的条件下,获得了很低的阈值电流,室温时,腔面未镀膜激光器的阈值电流为5.6mA.(L=120μm,CW.20℃)激射波长为9386A左右.外微分量子效率高达每面0.48mW/mA,最高输出功率大于30mW.     

高功率1310nm多量子阱分布反馈激光器

采用金属有机物化学汽相淀积／液相外延生长工艺和多量子阱－分布反馈双沟平面隐埋异质结结构，实现了１３１０ｎｍＩｎＧａＡｓＰ／ＩｎＰ多量子阱分布反馈激光器高功率输出。     

Degradation of ZnSe/ZnTe multiquantum well contacts to p-ZnSe

The work presented in this paper studied the degradation of ZnTe/ZnSe multiquantum well contacts to p-ZnSe under high current loading (1000 to 1500 A/cm²). During degradation, localized heating (up to 200°C > the bulk substrate and heat sink) was observed to occur at the point were electrical power was supplied. Auger data from degraded samples indicated that due to the localized heating, Zn and Te from the ZnTe layers and Zn from the ZnSe layer diffused through the Au metallization to the samples surface. In addition, thermal stress from the localized heating generated micro-cracks in the ZnSe which acted as high diffusivity paths for impurities. Rectangular defects were also found to form in the degraded region. These defects were oriented to the micro-cracks and had similar geometries as dislocation patches (dark line defects) which have been reported to form in the quantum well region of degraded ZnSe based laser devices. The similarities between the rectangular defects and dark line defects suggest the formation of similar dislocation patches in the quantum well region of the multiquantum well contacts.     

Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

(Ga,Mn)/N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.     

高峰值功率脉冲氟化氢激光器

报道了大体积火花预电离横向放电的脉冲HF激光器。通过采用紧凑的结构安排,在放电体积为4cm×5cm×90cm的SF6和C2H6混合气中获得了均匀稳定的放电。在总气压为12.6kPa、最高充电电压45kV时,激光输出脉冲能量为3J,激光脉冲峰值功率约18MW。     

高功率固体热容激光器

介绍了新概念固体热容激光器的基本原理,简述了其发展进程和现状,并对固体热容激光器关键技术进行了详细分析,探讨了其未来发展前景。     

高功率1018 nm 连续掺镱光纤激光器

成功搭建了高功率1018 nm连续掺镱光纤激光器,通过合理地择增益光纤长度,有效地抑制了ASE。实验获得了300 W最高输出功率,斜率效率为81%。     

大功率连续CO2激光器用于飞机激光去漆

激光飞机去漆相对于传统去漆方法有着明显的优势，利用大功率连续CO2激光器对飞机蒙皮表面漆层进行去除实验，经过对光束参数的控制，可以很好地去除铝合金蒙皮表面的漆层。     

High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W

A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission,and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated.Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance.The laser chips were p-side-down mounted on the AlN submount,and then tested at continuous wave(CW)operation with the heat-sink temperature setting to 25℃using a thermoelectric cooler(TEC).As high as 60.5%of the wall-plug efficiency(WPE)was achieved at the injection current of 11 A.The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12°C.Accelerated life-time test showed that the laser diodes had lifetimes of over 62111 h operating at rated power of 10 W.     

高功率光子晶体光纤激光器及其关键技术

与常规双包层光纤相比,空气包层大模面积光子晶体光纤更适用于高功率激光器的研制.介绍了高功率光子晶体光纤激光器研究的最新进展,分析了耦合系统和谐振腔设计中所存在的不利于功率提高的因素,指出低损耗的熔接技术是光子晶体光纤激光器达到更高功率的关键.