Low-temperature firing and microwave dielectric properties of 16CaO–9Li2O–12Sm2O3–63TiO2 ceramics with V2O5 addition

The sintering behaviors and microwave dielectric properties of the 16CaO–9Li₂O–12Sm₂O₃–63TiO₂ (abbreviated CLST) ceramics with different amounts of V₂O₅ addition had been investigated in this paper. The sintering temperature of the CLST ceramic had been efficiently decreased by nearly 100 °C. No secondary phase was observed in the CLST ceramics and complete solid solution of the complex perovskite phase was confirmed. The CLST ceramics with small amounts of V₂O₅ addition could be well sintered at 1200 °C for 3 h without much degradation in the microwave dielectric properties. Especially, the 0.75 wt.% V₂O₅-doped ceramics sintered at 1200 °C for 3 h have optimum microwave dielectric properties of Kr = 100.4, Q × f = 5600 GHz, and TCF = 7 ppm/°C. Obviously, V₂O₅ could be a suitable sintering aid that improves densification and microwave dielectric properties of the CLST ceramics.     

Influence of the electric field on flash-sintered (Zr + Ta) co-doped TiO2 colossal permittivity ceramics

In the preparation process for advanced ceramics, how to reduce the sintering temperature, shorten the processing time and refine grains is the key to obtaining high-performance ceramic materials. The flash sintering (FS) provides an effective method to solve this issue. Here, (Zr + Ta) co-doped TiO₂ colossal permittivity ceramics were successfully fabricated by conventional sintering (CS) and flash sintering under electric fields from 500 V/cm to 800 V/cm. The flash behavior, sintered crystal structure and microstructure, dielectric properties, and varistor characteristics were systematically investigated. The effects of the applied electric fields on the above behaviors were discussed. The results show that flash sintering can reduce the sintering temperature by 200 °C, decrease the processing time by 10 times and reduce grain sizes in TiO₂ ceramics. All sintered samples were single rutile structures. Flash sintering led to similar electrical properties to conventional sintering. In the flash-sintered samples, with increasing the electric field, the permittivity of co-doped TiO₂ ceramics increased at a frequency of 10³–10⁴ Hz. The flash-sintered sample under an electric field of 800 V/cm possessed the best comprehensive properties, a dielectric permittivity of >10⁵, a dielectric loss of ～0.77 at 10³ Hz, and a nonlinear coefficient of 5.2.     

Ge4+ doped CaCu2.95Zn0.05Ti4O12 ceramics: Two-step reduction of loss tangent

CaCu₃Ti₄O₁₂ ceramics have been extensively studied for their potential applications as capacitors in recent years; however, these materials exhibit very large dielectric losses. A novel approach to reducing the dielectric loss tangent in two steps, while increasing the dielectric permittivity, is presented herein. Doping CaCu₃Ti₄O₁₂ with a Zn dopant reduces the loss tangent of the ceramic material from 0.227 to 0.074, which is due to the increase in grain boundary (GB) resistance by an order of magnitude (from 6.3× 10³ to 3.93 × 10⁴ Ω cm). Zn-doping slightly changes the microstructure and dielectric permittivity of the CaCu₃Ti₄O₁₂ ceramic, which reveals that the primary role of the Zn dopant is to tune the intrinsic properties of the GBs. Surprisingly, the addition of the Ge⁴⁺ dopant into the Zn²⁺-doped CaCu₃Ti₄O₁₂ ceramic sample led to a further decrease in the loss tangent from 0.074 to 0.014, due to enhanced GB resistance (3.1 × 10⁵ Ω cm). The grain size increased remarkably from 2–3 μm to 85–90 μm, corresponding to a significant increase in the dielectric permittivity (~1–4 × 10⁴). The large increase in GB resistance is due to the intrinsic potential barrier height at the GBs and the segregation of the Cu-rich phase in the GB region. First-principles calculations revealed that Zn and Ge are preferentially located at the Cu sites in the CaCu₃Ti₄O₁₂ structure. The substitution of the Ge dopant does not hinder the role of the Zn dopant in terms of improving the electrical properties at the GBs. These phenomena are effectively explained by the internal barrier layer capacitor model. This study provides a way of improving the dielectric properties of ceramics for their practical use as capacitors.     

Dielectric and piezoelectric properties of (Ba0.95Ca0.05)(Ti0.88Zr0.12)O3 ceramics sintered in a protective atmosphere

(Ba_0.95Ca_0.05)(Ti_0.88Zr_0.12)O₃ (BCTZ) ceramics have been produced in a protective atmosphere of industrial N₂ gas for potential piezoelectric applications. For comparison, the ceramics were also sintered at 1200–1400 °C in air. The results revealed that the reducing atmosphere of pO₂ = 5 × 10² Pa had no substantial effect on the phase structure or the microstructure of the BCTZ ceramics. The XRD patterns suggested a tetragonal to pseudocubic phase transition at sintering temperatures above 1300 °C in both atmospheres. The nitrogen-sintered BCTZ samples had higher dielectric constants _r but lower electromechanical coupling coefficients k_p than the air-sintered samples. The piezoelectric constant d₃₃ for the BCTZ ceramics was not significantly influenced by the reducing atmosphere of pO₂ = 5 × 10² Pa. The correlation of dielectric and piezoelectric properties of the BCTZ ceramics with the sintering temperature was explained based on a competing mechanism between phase structure and microstructure.     

Controllable low-temperature flash sintering and giant dielectric performance of (Zn,Ta) co-doped TiO2 ceramics

In this study, the challenge of high-temperature and long-time sintering of (Zn, Ta) co-doped TiO₂ ceramics is solved successfully using flash sintering technology. Joule heating and a high heating rate make the sample compact rapidly at low temperatures (1050 °C in 24 min). When the electric field was equal to 200 V/cm, high permittivity (ε' ～ 1.32 × 10⁴), low dielectric loss tangent (tan δ ～ 0.27), and nonlinear coefficient ($\alpha$ ～ 5.8) values were obtained. Flash sintered samples have more free electrons, resulting in a high dielectric constant. Further, the higher the electric field, the smaller the grain resistance of the sample; this condition is conducive to reducing dielectric loss. giant dielectric performance is explained by the combined action of the electron-pinned defect dipole theory and the internal barrier layer capacitance effect. Therefore, this study provides a promising prospect for the green preparation of co-doped TiO₂ giant dielectric ceramics.     

Surface barrier layer effect in (In + Nb) co‐doped TiO2 ceramics: An alternative route to design low dielectric loss

Giant dielectric permittivity (ε′) with low loss tangent (tanδ) was reported in (In + Nb) co‐doped TiO₂ ceramics. Either of electron‐pinned defect‐dipole or internal barrier layer capacitor model was proposed to be the origin of this high dielectric performance. Here, we proposed an effectively alternative route for designing low‐tanδ in co‐doped TiO₂ ceramics by creating a resistive outer surface layer. A pure rutile‐TiO₂ phase with a dense microstructure and homogeneous dispersion of dopants was achieved in (In + Nb) co‐doped TiO₂ ceramics prepared by a simple sol‐gel method. Two giant dielectric responses were observed in low‐ and high‐frequency ranges, corresponding to extremely high ε′≈10⁶‐10⁷ and large ε′≈10⁴‐10⁵, respectively. After annealing in air, a low‐frequency dielectric response disappeared and could be restored by removing the outer surface of the annealed sample, indicating the dominant electrode effect in the initial sample. Annealing can cause improved dielectric properties with a temperature‐ and frequency‐independent ε′ value of ≈1.9 × 10⁴ and cause a decrease in tanδ from 0.1 to 0.035. High dielectric performance in (In_0.5Nb_0.5)_xTi_1?xO₂ ceramics can be achieved by eliminating the electrode effect and forming a resistive outer surface layer.     

Experimental study and DFT calculations of improved giant dielectric properties of Ni2+/Ta5+ co-doped TiO2 by engineering defects and internal interfaces

High-performance ceramics with chemical formula (Ni_1/3Ta_2/3)_xTi_1?xO₂ with excellent dielectric properties are demonstrated. The dopants of Ni²⁺ and Ta⁵⁺ in TiO₂ caused the formation of oxygen vacancies and free electrons. The (Ni_1/3Ta_2/3)_xTi_1?xO₂ exhibited low loss tangent of 0.046 and a high dielectric permittivity of 3.5–4.5 × 10⁴ with a very weak dependence on temperature (?60 to 200 °C). Broadband dielectric spectroscopy shows at least four dominant sources in the dielectric relaxation response in the temperature range of ? 253–210 °C. DFT calculations indicate the formation of defect clusters, which are the largest contributors to the dielectric response, and these are found to be dominant even at temperatures down to ? 253 °C. Both grain boundary and surface layer mechanisms in the ceramics contribute to the dielectric response at the relatively high temperatures. The sample–electrode contact effect associated with oxygen vacancy diffusion is dominant at high temperatures above 150 °C.     

Colossal permittivity in (In1/2Nb1/2)xTi1−xO2 ceramics prepared by a glycine nitrate process

(In + Nb) co-doped TiO₂ nanoparticles with very low dopant concentrations were prepared using a glycine nitrate process. A pure rutile—TiO₂ phase with a dense microstructure and homogeneous dispersion of dopants was achieved. By doping TiO₂ with 1.5% (In + Nb) ions, a very high dielectric permittivity of ε′ = 42,376 and low loss tangents of tanδ = 0.06 (at room temperature) were achieved. The large conduction activation energy at the grain boundary decreased with decreasing dopant concentration. The colossal permittivity was primarily attributed to the internal barrier layer capacitor (IBLC) effect. The dominant effect of interfacial polarization at the non–Ohmic sample–electrode contact was observed when the dopant concentration was ≤1.0 mol%. Interestingly, the sample–electrode contact and resistive–outer surface layer effects, i.e., surface barrier layer capacitor (SBLC) effect, has also an effect on the colossal dielectric response in (In + Nb) co-doped TiO₂ ceramics.     

The dielectric properties for (Nb,In,B) co-doped rutile TiO2 ceramics

Recently, colossal permittivities (~10⁵) and low loss factors (<0.1) were reported in (Nb+In) co-doped rutile TiO₂ ceramics, which have attracted considerable attention. In this work, (Nb,In,B) co-doped rutile TiO₂ ceramics were investigated for achieving temperature- and frequency- stable dielectric properties in TiO₂ based colossal dielectric ceramics. The (Nb,In,B) co-doped rutile TiO₂ ceramics were prepared by conventional solid-state reaction method. The microstructures, dielectric properties and complex impedance of 1 mol.% (Nb+In) co-doped rutile TiO₂ (TINO) and xwt% B₂O₃ (x=0.5, 1, 2 and 4) doped TINO were systematically investigated and compared. It was found that by doping B₂O₃ the sintering temperature of TINO ceramics can be reduced by 100 °C. Meanwhile, the dielectric loss of TINO ceramics was decreased by doping B₂O₃. In the ₂wt% B₂O₃ doped TINO ceramics, the dielectric permittivity kept a high value of >2.0×10⁵ and the dielectric loss was lower than 0.1 in a frequency range of 10²−10⁵ Hz and a temperature range of 25–200 °C.     

Low loss alumina dielectrics by aqueous tape casting: The influence of composition on the loss tangent

Polycrystalline aluminas with various concentrations of oxide dopants CaO, MgO, and TiO₂, ranging from 0.05 wt.% to 5 wt.% (3 wt.% in case of MgO), as well as pure alumina references were prepared by tape casting of aqueous suspensions and sintered in air at 1600 °C for 4 h for applications as low dielectric loss electroceramics. Loss tangents were measured at room temperature in the frequency range between 1 and 100 kHz as the key parameter for the intended application. The values of loss tangents of doped materials were influenced by the concentration of dopants. The addition of 0.5 and 5 wt.% of TiO₂ and 3 wt.% of MgO decreased the value of loss tangent in the whole frequency range. The addition of these dopants eliminated abnormal grain growth and decreased the amount of residual porosity. By doing so, the dopants compensated the negative influence of process impurities and decreased the loss tangent values. The cations (Ti⁴⁺) with high solubility in the Al₂O₃ crystal lattice were preferably built into the grain boundary glass, thus efficiently reducing the concentration of polarizable defects in corundum matrix; the formation of vitreous phase had a positive effect on the value of loss tangent in TiO₂ doped samples. The increased values of loss tangent were related to lower density of prepared materials, and the presence of residual porosity. Other contributing factors were especially the formation of calcium-containing secondary crystalline phases, and the increased concentration of lattice defects due to incorporation of atoms with different valencies to alumina crystal lattice.     

Sintering of aluminum nitride by using alumina crucible and MoSi2 heating element at temperatures of 1650 °C and 1700 °C

Aluminum nitride (AlN) ceramics, prepared with Y₂O₃ and CaO sintering additives, have been densified in an Al₂O₃ crucible at temperatures of up to 1650 °C and 1700 °C using a conventional MoSi₂ heating element furnace. The results of this study show that relative densities in excess of 99% of theoretical and a relatively high-thermal conductivity of 147 W m⁻¹ K⁻¹ have been achieved for feedstock materials prepared with combined addition of 1 wt.% Y₂O₃ and 1 wt.% CaO. All of the phases in sintered samples have been shown to be crystalline AlN and minor amount of secondary phases, were detected such as enriched Y- and Ca-aluminates by the XRD patterns, back-scattered imagery and microprobe analysis. The advantage of using the particular experimental system and sintering condition is considered to be amenable to lower production cost and enhance the feasibility of mass production. Critical temperature for AlN densification to obtain the highest density is about 1650 °C.     

High energy storage density and temperature-stable dielectric properties for (1-x)Bi0.38Na0.38Sr0.24TiO3-xBaSnO3 lead-free relaxor ceramics

Relaxor ferroelectrics are promising candidates for energy storage equipment due to their excellent energy-storage properties. Lead-free (1-x)Bi_0.38Na_0.38Sr_0.24TiO₃-xBaSnO₃ (abbreviated as BNST-100xBS) relaxor ceramics were synthesized by a traditional solid-phase sintering method. The influences of the addition of BaSnO₃ dopants for the energy storage and dielectric temperature-stable properties of BNST-100xBS ceramics were systemically investigated. All samples exhibited a typical pseudo-cubic symmetry structure and obtained the dense microstructure. The ergodic relaxor behavior of all ceramics was observed and revealed a trend of increase as a function of composition. All samples showed a single grain conduction mechanism and the activation energy decreased with the addition of composition. It is related to the generation of oxygen vacancies induced by the defect dipoles. BNST-2.5BS ceramic exhibited an outstanding recoverable energy density of ~1.42 J/cm³ with the corresponding efficiency of ~79.7% at 115 kV/cm field. In addition, excellent temperature-stable permittivity (43–255 °C) was obtained for BNST-7.5BS ceramic. Hence, BNST-2.5BS ceramic revealed excellent energy density properties and BNST-7.5BS exhibited outstanding temperature-stable dielectric permittivity, which was beneficial to use in energy storage equipment and other device applications.     

Dielectric properties of manganese and cobalt doped lead iron tantalate ceramics

This paper reports the results of synthesis and sintering studies as well as dielectric properties of Pb(Fe_1/2Ta_1/2)O₃ (PFT) relaxor ferroelectric ceramics. Influence of doping with MnO₂ and Co₃O₄ (0.1–1 mol%) on resistivity and dielectric characteristics were investigated. The dielectric permittivity and dissipation factor of the ceramics were determined as a function of temperature in the range from −55 to 500 °C at frequencies 10 Hz to 1 MHz. DC resistivities of the samples were measured in the temperature range 20–500 °C. Two maxima in dielectric permittivity versus temperature curves were observed, dependent on frequency and the content of dopants. The investigated PFT ceramics were characterized by high dielectric permittivity of 3500–6700 at the transition temperature and 900–17,000 at the second maxima.     

Ferroelectric Phase Transition,Interfaces Quality,and Stress Evolution of TiOx/BaxSr1−xTiO3 Structures

Ba(Sr,Ti)O₃ material presents a remarkable property that lies in the possibility to change the permittivity by applying a dc electric field, i.e., BST is a tunable material. That makes BST a very interesting material for the development of reconfigurable devices in microelectronics. In this study, we focus our work on Ba(Sr,Ti)O₃ with Ba/Sr = 30/70, the films are deposited by radio‐frequency magnetron sputtering on Al₂O₃ (0001). A buffer layer of TiO_x is used to control the film orientation. The influence of this buffer layer on the dielectric properties, the interfaces quality with respect to the film thickness, and the temperature is analyzed. An increase of 30% of the relative permittivity was measured and a tunability of 50% was attained at 300 KV/cm. The dielectric measurements on BST/TiO_x as a function of the temperature show a shift of the Curie temperature (T_c = ?40°C) in comparison to BST without TiO_x layer (T_c = ?80°C). We demonstrate that the Curie temperature does not correspond to the maximum permittivity. The important stress measured on the films (930 MPa) could explain this behavior.     

Dielectric properties and microstructures of CaSiO3 ceramics with B2O3 addition

The effects of B₂O₃ additives on the sintering behavior, microstructure and dielectric properties of CaSiO₃ ceramics have been investigated. The B₂O₃ addition resulted in the emergence of CaO–B₂O₃–SiO₂ glass phase, which was advantageous to lower the synthesis temperature of CaSiO₃ crystal phase, and could effectively lower the densification temperature of CaSiO₃ ceramic to as low as 1100 °C. The 6 wt% B₂O₃-doped CaSiO₃ ceramic sintered at 1100 °C possessed good dielectric properties: _r = 6.84 and tan δ = 6.9 × 10⁻⁴ (1 MHz).     

Role of A-site (Sr), B-site (Y), and A,B sites (Sr,Y) substitution in lead-free BaTiO3 ceramic compounds: Structural,optical, microstructure,mechanical, and thermal conductivity properties

Strontium and Yttrium-doped and co-doped BaTiO₃ (BT) ceramics with the stoichiometric formulas BaTiO₃, B_1-xSr_xTiO₃, Ba_1-xY_xTiO₃, BaTi_1-xY_xO₃, Ba_1-xY_xTi_1-xY_xO₃, and Ba_1-xSr_xTi_1-xY_xO₃ (x = 0.075) noted as BT, BSrT, BYT, BTY, BYTY, and BSrTY have been synthesized through sol-gel method. X-ray diffraction (XRD) patterns of the prepared ceramics, calcined at a slightly low temperature (950 °C/3h), displayed that BT, BSrT, and BYT ceramics possess tetragonal structures and BTY, BYTY, and BSrTY have a cubic structure. The incorporation of the Ba and/or Ti sites by Sr²⁺ and Y³⁺ ions in the lattice of BaTiO₃ ceramic and the behaviors of the crystalline characteristics in terms of the Y and Sr dopant were described in detail. The scanning electron microscopy (SEM) images demonstrated that the densification and grain size were strongly related to Sr and Y elements. UV–visible spectroscopy was used to study the optical behavior of the as-prepared ceramic samples and revealed that Sr and Y dopants reduce the optical band gap energy to 2.74 eV for the BSrTY compound. The outcomes also demonstrated that the levels of Urbach energy are indicative of the created disorder following the inclusion of Yttrium. The measurements of the thermal conductivity indicated the influence of the doping mechanism on the thermal conductivity results of the synthesized samples. Indeed, the thermal conductivity of BaTiO₃ is decreased with Sr and Y dopants and found to be in the range of 085–2.23 W.m^-1. K^?1 at room temperature and decreases slightly with increasing temperature from 2.02 to 0.73-W.m^-1. K^?1. Moreover, the microstructure and grains distribution of the BT, BSrT, BYT, BTY, BYTY, and BSrTY samples impacted the compressive strength, hence; the compressive strength was minimized as the grain size decreased.     

Low‐temperature sintering and thermal stability of Li2GeO3‐based microwave dielectric ceramics with low permittivity

A low‐permittivity dielectric ceramic Li₂GeO₃ was prepared by the solid‐state reaction route. Single‐phase Li₂GeO₃ crystallized in an orthorhombic structure. Dense ceramics with high relative density and homogeneous microstructure were obtained as sintered at 1000‐1100°C. The optimum microwave dielectric properties were achieved in the sample sintered at 1080°C with a high relative density ~ 96%, a relative permittivity ε_r ~ 6.36, a quality factor Q × f ~ 29 000 GHz (at 14.5 GHz), and a temperature coefficient of resonance frequency τ_f ~ ?72 ppm/^°C. The sintering temperature of Li₂GeO₃ was successfully lowered via the appropriate addition of B₂O₃. Only 2 wt.% B₂O₃ addition contributed to a 21.2% decrease in sintering temperature to 850°C without deteriorating the dielectric properties. The temperature dependence of the resonance frequency was successfully suppressed by the addition of TiO₂ to form Li₂TiO₃ with a positive τ_f value. These results demonstrate potential applications of Li₂GeO₃ in low‐temperature cofiring ceramics technology.     

Influence of solid loading on densification behavior,micromorphology and dielectric properties of Ba0.67Sr0.33TiO3 ceramics fabricated by a novel DCC-HVCI method

Ba_0.67Sr_0.33TiO₃ (BST) ceramics with highly improved dielectric performance were fabricated by a novel direct coagulation casting via high valence counter ions (DCC-HVCI) method. The influence of solid loading on densification behavior, micromorphology, and dielectric performance of the samples was investigated. With the increase of solid loading from 40 to 50 vol%, the maximum densification rate of BST ceramics increased from 0.090 to 0.122 s⁻¹, and the densification temperature decreased from 1424 to 1343 °C, which indicated that high solid loading could promote the densification behavior of samples during sintering. BST ceramics fabricated by the DCC-HVCI method showed uniform grain size and microstructure, which was beneficial for the dielectric properties of BST ceramics. Samples obtained from 45 vol% suspensions possessed the lowest dielectric permittivity (ε_r ≈ 2801), and the dielectric loss (tanδ≈0.0262) was about 1/10 of that of dry-pressed samples (tanδ≈0.301), which could be attributed to the composition homogenization.     

Effect of ionic radius on colossal permittivity properties of (A,Ta) co-doped TiO2 (A= alkaline-earth ions) ceramics

(A, B) co-doped TiO₂ ceramics attract great interests due to the excellent dielectric properties. In this work, the (A, Ta) co-doped TiO₂ ceramics were prepared by a solid state reaction process. The effect of the acceptors ionic radius on the structure and properties of TiO₂ ceramics was investigated. According to XRD analysis, the main phase is rutile TiO₂ for all samples. Due to the larger ionic radius, it is hard to replace Ti site in TiO₆ octahedron. As a result, the content of the secondary phase increased with increasing ionic radius. The dielectric properties were significantly enhanced by co-doping of alkaline-earth ions and tantalum ions, and the best dielectric constant obtained at 3% (Sr, Ta) co-doped compositions, where ε’ = 2.1 × 10⁵, tanδ = 0.21. Meanwhile, the XPS analysis suggested that the concentration of the defect dipoles exhibit a maximum in Sr-doped TiO₂ ceramics. The larger ionic radius of the acceptors leads to the more stability of the defect structure. However, for Ba ions, the replacement concentration decreased due to the excessive ionic radius, which in turn reduces the defect concentration. This work is meaningful for the further investigations on TiO₂-based colossal permittivity materials.     

Dielectric properties of PMMA/KCTO(H) composites for electronics components

Polymethyl methacrylate/hollandite-like copper doped potassium titanate high-k ceramics composites with different filler content (20–60 vol.%) are prepared by simple method of mixing of the polymer solution and ceramics dispersion followed evaporation of the solvent and hot pressing. The particle morphology and size are estimated by SEM. The composites obtained are studied by XRD, FTIR, and TGA methods. The influence of the additive and the concentration of hollandite-like copper doped potassium titanate high-k ceramics on dielectric properties (permittivity, conductivity, dielectric loss tangent) are investigated at frequency range from 10⁻¹ to 10⁶ Hz. It is shown that the increasing of ceramics concentration cause the increasing of main dielectric characteristics, namely permittivity up to 40 and dielectric loss up to 0.13 at 60 vol.% of filler and 0.1 Hz. Conductivity percolation threshold for PMMA/KCTO(H) composites was estimated (v_c = 0.0773 vol. [20.9 wt. %]). Experimental data on permittivity are compared with different theoretical models (Lichtenecker's model and the Effective Medium Theory model).