Structural and Optical Properties of Barium Strontium Titanate (Ba0.5Sr0.5TiO3) Thin Films

Ferroelectric Barium Strontium Titanate (Ba_0.5Sr_0.5TiO₃) or BST thin films on quartz substrates have been prepared by using a modified sol gel processing technique. The starting materials are Barium 2-ethylhexanoate Ba[CH₃(CH₂)₃CH(C₂H₅)CO₂]_2, Strontium 2-ethylhexanoate Sr[CH₃(CH₂)₃CH(C₂H₅)CO₂]₂ and Titanium(IV) isopropoxide [TiOCH(CH₃)₂]₄. The precursors except [TiOCH(CH₃)₂]₄ were synthesized in the laboratory. Transparent and crack-free films were fabricated on quartz substrates by spin coating. The as-fired films were found to be amorphous, which crystallized to cubic phase after annealing at 550°C in air for 1 hr. In this paper we report the structural and optical properties of BST films prepared by the modified sol-gel process.

Communicated by Prof. E. C. Subbarao     

Preparation, sintering, microstructure, and thermal stability of Y2O3- and CeO2-doped tetragonal zirconia ceramics

Yttria- and ceria-doped tetragonal zirconia polycrystals ((Y, Ce)-TZP) with compositions 2·5 mol% YO_1·5-4 mol% CeO₂---ZrO₂, 4 mol% YO_1·5-4 mol% CeO₂---ZrO₂, and 2·5 mol% YO_1·5-5·5 mol% CeO₂---ZrO₂ were prepared from zirconia sols obtained hy hydrolysis of ZrOCl₂ solution, and their sintering, microstructure and thermal stability were studied. Sintered bodies with 99% TD were obtained by firing at 1400°C for 2 h in air. The grain size of (Y, Ce)-TZP increased with decreasing Y₂O₃ content in Y₂O₃---CeO₂---ZrO₂. (Y, Ce)-TZP was resistant to tetragonal-to-monoclinic (t → m) phase transformation during low temperature ageing as compared with 3Y-TZP.     

Sol-gel processed barium titanate thin films

Ferroelectric barium titanate (BaTiO₃) thin films have been prepared by sol-gel technique from barium acetate [Ba(CH₃COO)₂] and titanium (IV) isopropoxied [Ti(CH₃)₂CHO)₄] precursors. The as-grown films were found to be amorphous which crystallized to tetragonal phase after annealing at 700°C for one hour in air. The room temperautre dielectric constant (ε) and loss tangent (tanδ) of the films were found to be 370 and 0.02 respectively. The values of the spontaneous polarization (P_s), remanent polarization (P_r) and coercive field (E_c) of the films determined from the polarization-field (P-E) hysteresis were found to be 14.0, 3.2μC-cm^-2 and 53KV-cm^-1 respectively. The coercive field of the film determined from the capacitance-voltage (C-V) characteristics is slightly lower than that determined from the P-E hysteresis loop.     

超高温稀土硼化物(Y1-xYbx)B6的制备及力学性能研究

六硼化钇(YB₆)高温下结构不稳定限制了其在超高温领域的应用,通过引入Yb元素,可形成高温稳定的(Y_1-xYb_x)B₆固溶体。本文以(Y_0.5Yb_0.5)₂O₃和B₄C为原料采用硼/碳热还原法制备了(Y_0.5Yb_0.5)B₆粉体,通过无压烧结实现了陶瓷致密化,并结合密度泛函理论计算综合分析了材料的晶体结构、微观形貌和力学性能。结果表明,在1 650 ℃下热处理,B₄C过量6.25%时合成的(Y_0.5Yb_0.5)B₆粉体纯度最高。在2 000 ℃下无压烧结获得的(Y_0.5Yb_0.5)B₆陶瓷致密度为95.80%,但晶粒尺寸偏大,可达(80.71±35.51) μm。通过两步烧结法所得陶瓷致密度、晶粒尺寸、硬度和断裂韧性分别为95.47%、(14.54±6.31) μm、(14.53±1.37) GPa和(2.81±0.34) MPa·m^1/2。陶瓷断口处与典型的高损伤容限陶瓷Ti₃SiC₂、Hf₃AlN的断口形貌十分类似,表明(Y_0.5Yb_0.5)B₆具有良好的损伤容忍度,有望提高超高温陶瓷的韧性与延性。     

Influence of Substrate Properties on the Dewetting Dynamics of Viscoelastic Polymer Films

We studied the dewetting process of thin polystyrene (PS) films on silicon substrates, coated with a thin, irreversibly adsorbed polydimethylsiloxane (PDMS) layer, by optical microscopy and atomic force microscopy. Besides demonstrating the exceptional potential of dewetting for a sensitive characterization of rheological properties of PS thin films, characterized by a stress-relaxation time, τ₁, we focused on the influence of the frictional behaviour (energy dissipation mechanism) at the interface between the PDMS-coated silicon wafer and the PS film on the dewetting process. Our results show that the initial stages of dewetting depend sensitively on the thickness and the way the PDMS layer was adsorbed. The maximum width of the dewetting rim at τ₁ increased with increasing PDMS layer thickness, which can be interpreted as an increase of the effective, velocity-dependent slippage length. Interestingly, τ₁ was found to be almost independent of the substrate properties. Our results demonstrate that dewetting is a really powerful approach for rheological and frictional studies of thin polymer films.     

Passivity behavior of melt-spun Mg–Y Alloys

Several Mg–Y binary ribbons with Y content up to 17.9 at.% were fabricated by melt-spinning. X-ray diffraction (XRD) revealed that the phase structure changes with increasing Y content from extended solid solution to partially amorphous, and then fully intermetallic Mg₂₄Y₅. Anodic potentiodynamic polarization performed in 0.01 M NaCl electrolyte (pH=12) revealed improved anodic passivity behavior compared to pure Mg for all the Mg–Y alloys. X-ray photoelectron spectroscopy (XPS) revealed that the improved passivity of Mg–Y was more related to the elemental oxidation state rather than the concentration of the surface components. To study the effect of Cl⁻ ion on the passivity behavior, anodic potentiodynamic and potentiostatic polarization were performed on Mg–17.9 at.% Y in alkaline (pH=12) NaCl electrolytes containing Cl⁻ ion in the concentration range from 0.00 to 0.50 M. The passive films formed in 0.01 M NaCl electrolyte were similar to the native film, which were composed of MgO and Y₂O₃. No CO₃²⁻ and Cl⁻ ions were incorporated into the passive film. The passivity was significantly degraded in the electrolytes containing higher Cl⁻ concentration (0.1 and 0.5 M). Detailed XPS revealed that the surface films under these conditions were composed of much hydrated species Mg(OH)₂ and YOOH and/or Y(OH)₃ and CO₃²⁻ was incorporated into the surface film. The incorporation of Y₂O₃ in the passive film was given as the reason for the enhanced passivity properties of Mg–Y ribbons. The mechanism of Cl⁻ and CO₃²⁻ ions to the degradation of the passivity was discussed.     

PHOTOCATALYTICALLY INDUCED DYE DECOLOURISATION IN AN UNSUPPORTED THIN FILM REACTOR

Aqueous solutions of the dye indigo carmine were decolourised following ultraviolet (UV) irradiation in the form of thin liquid films in the presence of the semi-conductoi photocatalyst, titanium dioxide, Ti02. These films, which were unsupported and totally enclosed, are commonly referred to as liquid “bells” and were generated using a nozzle of special design. Decolourisation rates were increased as the concentration of Ti0₂ was increased from 0.74 to 11.8 g/l. Addition of hydrogen peroxide, H₂0₂, in concentrations ranging from 1.07 to 8.53 g/l at a fixed Ti0₂ concentration of 1.47 g/l also resulted in increased rates of decolourisation. The rate of disappearance of the indigo carmine was assumed to follow first order kinetics whereas the influence of the two other species, Ti02 and H202, was accounted for by a power law model. The exponents for this model, obtained from an analysis of the experimental data, were 0.8 and 0.2 for, respectively Ti0₂ and H₂0₂.     

Effects of Excess Bismuth Content in Precursor Solutions on Ferroelectric Properties of BiFeO3 Thin Films Prepared by a Chemical Solution Deposition

Cr-substituted BiFeO₃ (BFCr) thin films prepared from precursor solutions with stoichiometric composition and various excess Bi contents ranged from 5 to 20 mol% were fabricated on Pt/TiO₂/SiO₂/Si(100) substrates by a chemical solution deposition method, and the effects of excess Bi content in precursor solutions on the ferroelectric properties of the as-deposited BFCr thin films were studied. It was found that the BFCr thin film prepared from precursor solution with excess Bi content of 5 mol% exhibited the best dielectric constant-frequency and polarization-electric field characteristics. In detail, its dielectric constant is 158 at frequency of 100 kHz and remnant polarization (P_r) value is 49 μ C/cm² at electric field of 600 kV/cm.     

Structural and optical properties of MoO3 and V2O5 thin films prepared by Spray Pyrolysis

MoO₃ and V₂O₅ thin films were prepared on glass substrates by Spray Pyrolysis technique at a substrate temperature of 423 K. The precursor solutions were obtained by varying the concentrations of MoCl₅ and VCl₃ in bi-distilled water. The structural investigation conducted by X-ray diffraction showed that MoO₃ and V₂O₅ thin films were polycrystalline with orthorhombic structure. The optical properties studied in the 300–2500 nm range suggest that the thin film behaviours are related to bound electronic states. The optical band gaps have been estimated from slopes of ln(hν) versus hν plots of MoO₃ and V₂O₅ films were 3.35 and 2.44 eV, respectively. The electrical conductivity was measured using four probes method.     

Microstructure and Electrical Properties of MgAl2O4 Thin Films for Humidity Sensing

Active elements for humidity sensors based upon MgAl₂O₄ thin films or sintered pellets were investigated. Thin films were deposited on Si/SiO₂ substrates by radiofrequency (rf) sputtering. Sintered MgAl₂O₄ pellets were prepared by traditional ceramic processing. Scanning electron microscopy (SEM) analysis showed that the thin films were rather dense and homogeneous, made up of clustered particles of about 20–30 nm, while the pellets showed a wide pore-size distribution. X-ray photoelectron spectroscopy (XPS) demonstrated that the thin films have a stoichiometry close to that of MgAl₂O₄. Sintered MgAl₂O₄ is crystalline, while it is disordered in thin-film form. The presence of two different components of the Al 2 p peaks was correlated with the structural difference between pellets and thin films. The relationship between good film–substrate adhesive properties and the chemical composition at the interface was studied. The electrical properties of the sensing elements were studied at 40°C in environments at different relative humidity (RH) values between 2% and 95%, using ac impedance spectroscopy. MgAl₂O₄ thin films showed interesting characteristics in terms of their use in humidity-measurement devices. Resistance versus RH sensitivity values showed variations as high as 4 orders of magnitude in the RH range tested for thin films, and 5 orders of magnitude for pellets. The differences in the electrical behavior of MgAl₂O₄ pellets and thin films were correlated with their different microstructures.     

氧化铈掺杂氧化钇稳定氧化锆的热膨胀特性

研究了在Y_0.06Zr_0.94O_1.97中掺杂二氧化铈（CeO₂）对其热膨胀系数的影响。使用共沉淀法合成Ce_xY_0.06Zr_0.94-xO_1.97(0.08≤x≤0.16)粉体,压制成型后根据样品的受热收缩曲线确定其焙烧温度。然后将试样分别放在1 250、1 350、1 450 ℃的高温电炉中烧结3 h。采用X射线衍射（XRD）和扫描电镜（SEM）分析其微观结构,利用热膨胀仪检测其热膨胀系数。研究表明：Ce_xY_0.06Zr_0.94-xO_1.97(0.08≤x≤0.16)的热膨胀系数高于Y_0.06Zr_0.94O_1.97,原因是二氧化铈的掺杂增大了Y_0.06Zr_0.94O_1.97的晶格常数,有效地削弱了材料的化学键。     

Microstructure and Dielectric Properties of YMnO3 Thin Films Prepared by Dip-Coating

YMnO₃ thin films with Y/Mn ratios from 1.00/1.05 to 1.00/0.90 were prepared by dip-coating from solution, in which starting materials were refluxed, and the effects of the Y/Mn ratio on the structure and dielectric properties of YMnO₃ thin films were investigated. XRD measurements indicated that the films with the Y/Mn ratios in this study were a single phase of polycrystalline YMnO₃. The lattice constants along the a -axis and c -axis lengthened with an increase in the Y/Mn ratio. FE-SEM micrographs of the films showed that the surface of the films became smoother and denser with an increase in the Y/Mn ratio. YMnO₃ thin films with good dielectric properties were obtained with an Y/Mn ratio of 1.00/0.90, which gave the smoothest and densest microstructure and the smallest leakage current.     

A low temperature preparation of Sr0.7Bi2 x.Ta2O9 thin films on SiO2/Si by pulsed laser deposition for application of metal-ferroelectric-insulator-semiconductor structure

Preferentially (105)-oriented Sr_0.7B1_2.8Ta₂O₉ thin films on SiO₂/n-Si(100) have been prepared by Pulsed Laser Deposition (PLD) at low temperature as low as 350°C, which is the lowest process temperature for growing Sr_xBi_yTa₂O₉(SBTO) ferroelectric thin films. Insulating properties of the SBTO film have been improved by lowering the process temperature or by increasing Sr/Bi atomic ratio from 0.7/2.8 to 0.7/2.0. After applying the low leakage SBTO films to Metal-Ferroelectric-Insulator-Semiconductor diode structures, it is finally observed that their C-V curves have counterclockwise dielectric hysteresis that indicates the films' ferroelectric hysteresis sufficiently control the Si surface potential. A low temperature process in preparing ferroelectric thin film and Sr-deficient and Bi-excess SBTO thin film by PLD method are very effective and promising for realizing an excellent MFIS FET structure.     

Calorimetric investigations of overcritical behaviour in (TEA)2CuCl4 crystals

The results of experimental investigation of molar heat capacity of [N(C₂H₅)₄]₂CuCl₄ - ferroelasto-ferroelectric crystals in a wide temperature range are presented. The typical anomaly for the first order phase transition of order-disorder type at 258 K and additional anomaly with maximum at 195 K has been observed. We suggest that the low temperature anomalies of physical properties of [N(C₂H₅)₄]₂CuCl₄ crystals can be attributed to over critical traces of isomorphous phase transitions (similar to that observed in liquid-gas system). Results of numerical analysis of phenomenological model of phase transition in [N(C₂H₅)₄]₂CuCl₄ crystals are presented and compared with the experimentally determined temperature dependence of the specific heat and entropy changes.     

Y2O3对高热导率Si3N4陶瓷显微结构和性能的影响

以氧含量相对较高的“平价”Si₃N₄粉体(氧含量1.85%(质量分数))为原料,Y₂O₃-MgO作为烧结助剂,制备低成本高热导率Si₃N₄陶瓷,研究Y₂O₃含量对Si₃N₄陶瓷致密化、显微结构、力学性能及热导率的影响。结果表明,适当增加Y₂O₃的加入量不仅可以促进Si₃N₄陶瓷的致密化和显微结构的细化,还有助于晶格氧含量的降低和热导率的提升。Y₂O₃含量为7%(质量分数)的样品在1 900 ℃烧结后的综合性能最佳,其相对密度、抗弯强度、断裂韧性和热导率分别为99.5%、(726±46) MPa、(6.9±0.2) MPa·m^1/2和95 W·m^-1·K^-1。     

Surface enhanced Raman spectroelectrochemical studies of the corrosion films on iron and chromium in aqueous solution environments

“In situ” laser Raman spectra of the corrosion films on iron have been observed in aerated 5 M KOH and 0.15 M NaCl solutions via surface enhancement by the electrodeposition of a silver overlayer. Essentially the same spectra are observed in the two solutions as a function of applied potential in spite of a breakdown of passivity on iron in the chloride solution. Fe(OH)₂ and Fe₃O₄ are found in the prepassive potential region while FeOOH is present in the passive region. A film which is very difficult to reduce appears to be always present on the electrode surface even at hydrogen evolution potentials; this film is believed to be -FeOOH. Surface enhanced Raman spectra of the corrosion films on chromium have also been obtained in NaCl solution for the first time. The passive film has a composition that corresponds most closely to an amorphous form of Cr₂O₃, with some Cr(OH)₃ also present. The film is converted in the transpassive region to a higher oxide form, presumably CrO²⁻₄. Reversible reduction of this species to Cr₂O₃ is indicated.     

硫酸盐熔融反应法从钛铁矿中提取钛的研究

以海南万宁的钛铁矿和硫酸铵为主要原料,通过熔融反应法使钛铁矿中的钛转化为易溶于稀酸的硫酸氧钛,用稀硫酸浸取,达到提高钛浸取率的目的。考察了硫酸铵加入量、焦硫酸钾加入量、反应温度、稀硫酸浸取浓度对钛浸取率的影响。实验结果表明：硫酸铵和焦硫酸钾的加入量、反应温度对钛浸取率的影响较大。提高钛浸取率的最佳条件为：m（钛铁矿）∶m（硫酸铵）∶m（焦硫酸钾）=1∶6∶0.5,反应温度为450 ℃,保温时间为30 min,稀硫酸浸取浓度为2.32 mol/L,在此条件下钛的浸取率达到96.82%。     

Electrodeposition of iron–palladium thin films

FePd thin films were electrodeposited from ammonium citrate complex baths. The effects of various electrodeposition and post heat treatment conditions including pH, current density, bath concentrations, substrates and annealing temperature on composition, material, and magnetic properties were systematically investigated. In these baths, the deposited iron content increased linearly with an increase in current density from 1 to 5 mA cm⁻² producing films with compositions extending from Fe₇Pd₉₃ to Fe₉₁Pd₉. Magnetic saturation (M_S) of electrodeposited FePd thin films linearly increased with increase in deposited iron content (i.e. 1.8 T for Fe₈₂Pd₁₈ and 0.1 T for Fe₁₉Pd₈₁) which is similar to its bulk counterparts. The effects of post-heat treatment on the phase and crystal structure of near equiatomic FePd electrodeposits (i.e. Fe₄₈Pd₅₂) was investigated by subjecting electrodeposits to different annealing temperatures from 400 to 600 °C under reducing environment. L1₀ FePd phase was formed from nanocrystalline FePd solid solution and the crystallinity improved with increasing annealing temperatures.     

无压烧结氮化硅陶瓷的物理性能研究

以α-Si₃N₄粉末为原料,Y₂O₃和MgAl₂O₄体系为烧结助剂,采用无压烧结方式,研究了烧结温度、保温时间、烧结助剂含量以及各组分配比对氮化硅致密化及力学性能的影响。结果表明:以Y₂O₃和MgAl₂O₄为烧结助剂体系,氮化硅陶瓷在烧结温度为1 600 ℃,保温时间为4 h,烧结助剂含量为12.5%(质量分数),Y₂O₃和MgAl₂O₄质量比为1∶1时,综合性能最好;氮化硅陶瓷显气孔率为0.21%,相对密度为98.10%,抗弯强度为598 MPa,维氏硬度为15.55 GPa。     

Preparation of catalyst precursors for selective oxidation of n-butane by exfoliation–reduction of VOPO4·2H2O in primary alcohol

A new method through intercalation and exfoliation of VOPO₄·2H₂O crystallites in primary alcohol (1-propanol or 1-butanol), followed by reduction with the alcohol, have been investigated for the preparation of catalyst precursor. Lamellar compounds, consisting of V⁴⁺, P⁵⁺ and alkyl group with thin film-like morphology, were formed and was characterized by means of XRD, IR, TG/DTA, and elemental analysis. The chemical formula of the precursor obtained by exfoliation–reduction in 1-butanol was shown to be VO{(n-C₄H₉)_0.16H_0.84}PO₄·0.8H₂O. On the other hand, a direct reduction of VOPO₄·2H₂O in the alcohol gave a mixed phase shown by (VOHPO₄·0.5H₂O)_0.3(VO{(n-C₄H₉)_0.3H_0.7}PO₄·3H₂O)_0.7 comprising plate-like microcrystallites. These precursors transformed to (VO)₂P₂O₇ phase during an activation process at 703 K in the presence of a mixture of n-butane 1.5% and O₂ 17% in He balance. The obtained (VO)₂P₂O₇ through the exfoliation–reduction was well crystallized and consisted of thin flaky crystallites. It was found that (VO)₂P₂O₇ thus prepared through the exfoliation–reduction was highly active and selective for oxidation of n-butane.