Growth behavior of titanium dioxide thin films at different precursor temperatures

The hydrophilic TiO₂ films were successfully deposited on slide glass substrates using titanium tetraisopropoxide as a single precursor without carriers or bubbling gases by a metal-organic chemical vapor deposition method. The TiO₂ films were employed by scanning electron microscopy, Fourier transform infrared spectrometry, UV-Visible [UV-Vis] spectroscopy, X-ray diffraction, contact angle measurement, and atomic force microscopy. The temperature of the substrate was 500°C, and the temperatures of the precursor were kept at 75°C (sample A) and 60°C (sample B) during the TiO₂ film growth. The TiO₂ films were characterized by contact angle measurement and UV-Vis spectroscopy. Sample B has a very low contact angle of almost zero due to a superhydrophilic TiO₂ surface, and transmittance is 76.85% at the range of 400 to 700 nm, so this condition is very optimal for hydrophilic TiO₂ film deposition. However, when the temperature of the precursor is lower than 50°C or higher than 75°C, TiO₂ could not be deposited on the substrate and a cloudy TiO₂ film was formed due to the increase of surface roughness, respectively.     

Spectral Selective Solar Light Enhanced Photocatalysis: TiO<Subscript>2</Subscript>/TiAlN Bilayer Films

We demonstrate that spectral selective photocatalytic multilayer films can be tailored such that they can harness the full solar spectrum for enhanced photocatalytic gas-phase oxidation of acetaldehyde. Thin films of anatase TiO₂ were deposited on a thin solar absorber TiAlN film to fabricate bilayer TiO₂/TiAlN films by dc magnetron sputtering on aluminium substrates. The structural and optical properties of the films were characterized by X-ray diffraction and Raman spectroscopy. The reaction rate and quantum yield for acetaldehyde removal was measured and an almost tenfold enhancement of the quantum yield was observed for the TiO₂/TiAlN films compared with the single TiO₂ film, on par with enhancements achieved with new heterojunction photocatalysts. The results were interpreted by a temperature-induced change of the reaction kinetics. Absorption of simulated solar light illumination resulted in a temperature increase of the TIAlN film that was estimated to be at most 126 K. We show that a concomitant temperature increase of the top layer TiO₂ by 100 K shifts the water gas-surface equilibrium from multilayer to submonolayer coverage. We propose that this is the main reason for the observed enhancement of the photocatalytic activity, whereby gas phase molecules may come in direct contact with free surface sites instead of having to diffuse through a thin water film. The implications of the results for judicious control of temperature and relative humidity for efficient gas-phase photocatalysis and exploitation of selective solar absorbing films are discussed.     

Uniform color coating of multilayered TiO<Subscript>2</Subscript>/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> films by atomic layer deposition

Thin film optics, based on light interference characteristics, are attracting increasing interest because of their ability to enable a functional color coating for various applications in optical, electronic, and solar industries. Here, we report on the dependence of coloring characteristics on single-layer TiO₂ thicknesses and alternating TiO₂/Al₂O₃ multilayer structures prepared by atomic layer deposition (ALD) at a low growth temperature. The ALD TiO₂ and Al₂O₃ thin films were studied at a low growth temperature of 80°C. Then, the coloring features in the single-layer TiO₂ and alternating TiO₂/Al₂O₃ multilayers using both the ALD processes were experimentally examined on a TiN/cut stainless steel sheet. The Essential Macleod software was used to estimate and compare the color coating results. The simulation results revealed that five different colors of the single TiO₂ layers were shown experimentally, depending on the film thickness. For the purpose of highly uniform pink color coating, the film structures of TiO₂/Al₂O₃ multilayers were designed in advance. It was experimentally demonstrated that the evaluated colors corresponded well with the simulated color spectrum results, exhibiting a uniform pink color with wide incident angles ranging from 0° to 75°. This article advances practical applications requiring highly uniform color coatings of surfaces in a variety of optical coating areas with complex topographical structures.     

Low‐Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma

Hexagonal boron nitride (hBN) thin films were deposited on silicon and quartz substrates using sequential exposures of triethylboron and N₂/H₂ plasma in a hollow‐cathode plasma‐assisted atomic layer deposition reactor at low temperatures (≤450°C). A non‐saturating film deposition rate was observed for substrate temperatures above 250°C. BN films were characterized for their chemical composition, crystallinity, surface morphology, and optical properties. X‐ray photoelectron spectroscopy (XPS) depicted the peaks of boron, nitrogen, carbon, and oxygen at the film surface. B 1s and N 1s high‐resolution XPS spectra confirmed the presence of BN with peaks located at 190.8 and 398.3 eV, respectively. As deposited films were polycrystalline, single‐phase hBN irrespective of the deposition temperature. Absorption spectra exhibited an optical band edge at ~5.25 eV and an optical transmittance greater than 90% in the visible region of the spectrum. Refractive index of the hBN film deposited at 450°C was 1.60 at 550 nm, which increased to 1.64 after postdeposition annealing at 800°C for 30 min. These results represent the first demonstration of hBN deposition using low‐temperature hollow‐cathode plasma‐assisted sequential deposition technique.     

Development of MgO:TiO2 thin films for gas sensor applications

In this study, structural, morphological and optical properties, and gas sensor performance of magnesium oxide (MgO) doped titanium dioxide (TiO₂) thin films were investigated in detail. Gas sensor metallic patterns were fabricated on Si substrate using traditional photolithographic technique. MgO doped TiO₂ thin films were deposited on formed Pt electrode surface by confocal sputtering (co-sputtering) system as the active layer. Thin film characterizations were realized by using secondary ion mass spectroscopy (SIMS), atomic force microscope (AFM) and UV–Vis Spectrometer (UV–Vis). Gas sensing measurements were performed by gas sensing test system against methane gas at working temperature of 300?°C. To evaluate deposition and thermal annealing effects on the sensing performance, sensors were tested under gas. The sensitivity and response/recovery time of gas sensors were measured in 1000?ppm. MgO doped TiO₂ based sensor at substrate temperature of 100?°C has high sensitivity and short response/recovery time.     

Hybrid multilayer thin-film fabrication by atmospheric deposition process for enhancing the barrier performance

In this paper, a multilayer barrier thin film, based on polyvinylidene difluoride (PVDF)–silicon dioxide (SiO₂), has been fabricated on a PET substrate through a novel method of joint fabrication techniques. The inorganic SiO₂ thin film was deposited using a roll-to-roll atmospheric atomic layer deposition system (R2R-AALD), while the organic PVDF layer was deposited on the surface of SiO₂ through the electrohydrodynamic atomization (EHDA) technique. The multilayer barrier thin films exhibited very good surface morphology, chemical composition, and optical properties. The obtained values for arithmetic surface roughness and water contact angle of the as-developed multilayer barrier thin film were 3.88 nm and 125°, respectively. The total thickness of the multilayer barrier thin film was 520 nm with a high optical transmittance value (85–90%). The water vapor transmission rate (WVTR) of the barrier thin film was ~?0.9?×?10^?2 g m^?2 day^?1. This combination of dual fabrication techniques (R2R-AALD and EHDA) for the development of multilayer barrier thin films is promising for gas barrier applications.     

Effect of annealing on grain growth and Y segregation behavior in tetragonal ZrO2 thin film

In order to fabricate tetragonal yttria stabilized zirconia samples with large grain size, 3 mol% Y₂O₃ doped zirconia thin films were grown on (0001) α-Al₂O₃ substrate by pulsed laser deposition (PLD) followed by subsequent high temperature annealing. The thin film samples were annealed at 1200°C, 1250°C, 1300°C, and 1350°C in order to obtain larger grain size without Y segregation. The microstructure and chemical composition of these annealed films were analyzed using atomic force microscopy, scanning transmission electron microscopy, and energy-dispersive X-ray spectroscopy. The as-grown thin film was found to be composed of [111]-oriented grains of ∼100 nm connected with small-angle tilt boundaries. Based on analysis of annealed thin films, it was revealed that grain growth of tetragonal zirconia occurred anisotropically. Cross section scanning transmission electron microscopy observations revealed that such grain growth behavior is affected by the step-terrace structures of the sapphire substrate. Energy-dispersive X-ray spectroscopy showed that Y was found to distribute almost uniformly below 1300°C but to segregate at the grain boundaries at 1350°C. As a conclusion, the 1300°C-annealed sample shows the largest grain size with homogeneous Y distributions.     

Formation of PbTiO<Subscript>3</Subscript> films from multilayered structures of primitive oxides

The possibility of the formation of PbTiO₃ from a multilayer structure of PbO and TiO₂ layers on Pt-coated Si substrates prepared by rapid thermal metal organic chemical vapor deposition (RTMOCVD) followed by an appropriate annealing process was examined. The metal organic precursors of PbO and TiO₂ were Pb(C₂H₅)₄ and Ti(Oi-C₃H₇)₄, respectively. The composition of the PbTiO₃ thin film was adjusted by control of the thickness of each binary oxide layer of PbO and TiO₂. The multilayer structure was converted into crystalline PbTiO₃ by rapid thermal annealing under O₂ ambient at temperature greater than 550 °C. As the annealing temperature was increased from 550 to 750 °C, the peaks related to perovskite PbTiO₃ in the XRD patterns became stronger and sharper. From this study, it was confirmed that the crystalline PbTiO₃ thin films could be prepared from the interdiffusion reaction of multilayer structure composed of primitive binary oxides through the appropriate post annealing process.     

Preparation and characterization of mesoporous TiO<Subscript>2</Subscript> thin film

Ordered hexagonal mesoporous TiO₂ thin film was prepared by the evaporation-induced self-assembly (EISA) method using triblock copolymer (Pluronic P123) and tetrabutyl orthotitanate (Ti(OBu ⁿ )₄, TBOT) in 1-methoxy-2-propanol (C₄H₁₀O₂, PGME) solvent. The arrangement of mesopores was identified by small-angle X-ray diffraction and transmission electron microscopy (TEM). The well-ordered hexagonal mesoporous TiO₂ had a high specific surface area of 239 m²/g and an average pore size of 6.3 nm. The structure of mesoporous TiO₂ thin film was anatase with a 5.1 nm crystallite. The absorption band shift of the mesoporous TiO₂ toward longer wavelengths as calcined at 350 °C due to the residual carbon.     

Preparation of hydrophobic SiO<Subscript>2</Subscript>@(TiO<Subscript>2</Subscript>/MoS<Subscript>2</Subscript>) composite film and its self-cleaning properties

TiO₂/MoS₂ composite was encapsulated by hydrophobic SiO₂ nanoparticles using a sol–gel hydrothermal method with methyltriethoxysilane (MTES), titanium tetrachloride (TiCl₄), and molybdenum disulfide (MoS₂) as raw materials. Then, a novel dual functional composite film with hydrophobicity and photocatalytic activity was fabricated on a glass substrates via the combination of polydimethylsiloxane adhesives and hydrophobic SiO₂@(TiO₂/MoS₂) composite particles. The influence of the mole ratios of MTES to TiO₂/MoS₂ (M:T) on the wettability and photocatalytic activity of the composite film was discussed. The surface morphology, chemical compositions, and hydrophobicity of the composite film on the glass substrate were investigated by scanning electron microscopy, transmission electron microscopy, X-ray powder diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and water contact angle (water CA) measurements. The results indicated that the composite film exhibited stable superhydrophobicity and excellent photocatalytic activity for degradation of methyl orange (MO) even after five continuous cycles of photocatalytic reaction when M/T was 7:1. The water CA and degradation efficiency for MO remained at 154° and 94%, respectively. Further, the composite film showed a good non-sticking characteristic with the water sliding angle (SA) at about 4°. The SiO₂@(TiO₂/MoS₂) composite consisting of hydrophobic SiO₂ nanoparticles and TiO₂/MoS₂ heterostructure could provide synergistic effects for maintaining long-term self-cleaning performance.     

Preparation and characterization of TiO2 thin films by PECVD on Si substrate

Titanium oxide thin films were prepared on p-Si(l00) substrate by plasma enhanced chemical vapor deposition using high purity titanium isopropoxide and oxygen. The deposition rate was little affected by oxygen flow rate, but significantly affected by RF power, substrate temperature, carrier gas flow rate, and chamber pressure. Morphology of the film became coarser with increasing deposition time and chamber pressure, and the film showed less uniformity at high deposition rates. It was also found that the overall deposition process is controlled by heterogeneous surface reaction below 200°C., but controlled by mass transfer of reactants at higher temperatures. TiO₂ films deposited at temperatures lower than 400°C was amorphous, but showed the anatase crystalline structure upon 400°C deposition. The dielectric constant was about 47 for the films post-treated by rapid-thermal annealing (RTA) at 800°C. The leakage current was about 2×10⁻⁵ A/cm² for the films deposited at 400°C and RTA-treated at 600°C. However, it was decreased to less than 3×10⁻⁷ A/cm² for the film RTA-treated at 800°C.     

Preparation of super-hydrophilic amorphous titanium dioxide thin film via PECVD process and its application to dehumidifying heat exchangers

The super-hydrophilic amorphous titanium dioxide (TiO₂) thin film was prepared by plasma-enhanced chemical vapor deposition (PECVD) process for an application to dehumidifying finned-tube heat exchangers. The chemical components and surface structure were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and scanning electron microscope (SEM). The wettability and long-term durability were investigated by measuring the water contact angle and by performing wet/dry cycles. The samples were subjected to 1000 times of wet/dry cycles to establish long-term durability. The water contact angle of the amorphous TiO₂ thin film was about 8° at as-deposited film with O₂ plasma treatment and was about 15° after 1000 wet/dry cycles. The amorphous TiO₂ thin film had excellent wettability and long-term durability under full wetting conditions.     

Thermal annealing induced cave in and formation of nanoscale pits in Ag–TiO2 plasmonic nanocomposite thin film

Ag–TiO₂ nanocomposite thin films on silica glass were prepared through thermal evaporation in combination with RF magnetron sputtering. Thermal annealing induced changes in the optical, morphological and structural properties of Ag–TiO₂ nanocomposites were examined using optical absorption, photoluminescence spectroscopy, Raman spectroscopy, FESEM, AFM and XRD. FESEM and AFM studies revealed cave in of the Ag–TiO₂ thin film at various places leading to the formation nanoscale pits upon thermal annealing at 600 °C. The computed average size of pits was found to be 54 nm. Raman studies indicated 600 °C annealing induced transformation of anatase phase of TiO₂ into anatase/rutile mixed phase TiO₂. Optical absorption spectra showed systematic changes due to the effects of mixed phase formation and variation in the plasmonic behavior upon annealing. PL results of the as deposited Ag–TiO₂ thin film showed peaks at 377, 402, 432 and 486 nm. PL studies of Ag–TiO₂ nanocomposites treated at different annealing temperatures revealed changes in defect concentration in TiO₂. The tentative mechanism for the creation of nanoscale pits in Ag–TiO₂ thin film through thermal annealing was proposed.     

Mesoporous TiO<Subscript>2</Subscript> microspheres synthesized via a facile hydrothermal method for dye sensitized solar cell applications

Mesoporous TiO₂ microspheres were successfully synthesized by a facile hydrothermal process and the obtained product was sintered at 450 °C. The sintered TiO₂ powder was characterised by powder X-ray diffraction pattern and the result shows pure anatase phase with good crystalline nature. The morphological image of field emission scanning electron microscopy and high resolution transmission electron microscopy shows spherical shape and size of the particles is around 100 to 300 nm. The Brunauer–Emmett–Teller surface area of synthesized TiO₂ material was 56.32 m² g^?1 and average pore width of synthesized materials was 7.1 and 9.3 nm. Bimodal pore structure of TiO₂ microspheres has been very effective for electrolyte diffusion into photoanode in dye sensitized solar cells. The synthesized anatase TiO₂ microsphere based dye sensitized solar cells have high surface area with light scattering effect to enhance the photocurrent and conversion efficiency than the commercial P25 photoanode material. The power conversion efficiency of synthesized mesoporous TiO₂ microspheres and commercial P25 material is 4.2 and 2.7 % respectively. Therefore bimodal mesoporous anatase TiO₂ microsphere appears to be a promising and potential candidate for dye sensitized solar cells (DSSC) application.     

Preparation of diamond like carbon thin films above room temperature and their properties

Diamond like carbon (DLC) thin films were deposited on p-type silicon (p-Si), quartz and ITO substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at different substrate temperatures (RT ∼ 300 °C). Argon (Ar: 200 sccm) was used as carrier gas while acetylene (C₂H₂: 20 sccm) and nitrogen (N: 5 sccm) were used as plasma source. Analytical methods such as X-ray photoelectron spectroscopy (XPS), FT-IR and UV–visible spectroscopy were employed to investigate the structural and optical properties of the DLC thin films respectively. FT-IR spectra show the structural modification of the DLC thin films with substrate temperatures showing the distinct peak around 3350 cm^− 1 wave number; which may corresponds to the sp² C–H bond. Tauc optical gap and film thickness both decreased with increasing substrate temperature. The peaks of XPS core level C 1 s spectra of the DLC thin films shifted towards lower binding energy with substrate temperature. We also got the small photoconductivity action of the film deposited at 300 °C on ITO substrate.     

High-rate low-temperature dc pulsed magnetron sputtering of photocatalytic TiO2 films: the effect of repetition frequency

The article reports on low-temperature high-rate sputtering of hydrophilic transparent TiO₂ thin films using dc dual magnetron (DM) sputtering in Ar + O₂ mixture on unheated glass substrates. The DM was operated in a bipolar asymmetric mode and was equipped with Ti(99.5) targets of 50 mm in diameter. The substrate surface temperature T_surf measured by a thermostrip was less than 180 °C for all experiments. The effect of the repetition frequency f_r was investigated in detail. It was found that the increase of f_r from 100 to 350 kHz leads to (a) an improvement of the efficiency of the deposition process that results in a significant increase of the deposition rate a_D of sputtered TiO₂ films and (b) a decrease of peak pulse voltage and sustaining of the magnetron discharge at higher target power densities. It was demonstrated that several hundreds nm thick hydrophilic TiO₂ films can be sputtered on unheated glass substrates at a_D = 80 nm/min, T_surf < 180 °C when high value of f_r = 350 kHz was used. Properties of a thin hydrophilic TiO₂ film deposited on a polycarbonate substrate are given.     

Characterization of single crystalline a-TiO2 films on MgAl2O4(100) substrates by MOCVD

Anatase phase TiO₂ (a-TiO₂) films have been deposited on MgAl₂O₄(100) substrates at the substrate temperatures of 500–650 °C by the metal organic chemical vapor deposition (MOCVD) method using tetrakis-dimethylamino titanium (TDMAT) as the organometallic (OM) source. The structural analyses indicated that the TiO₂ film prepared at 600 °C had the best single crystalline quality with no twins. The out-of-plane and in-plane epitaxial relationships of the film were a-TiO₂(001)||MgAl₂O₄(100) and TiO₂[100]||MgAl₂O₄[100], respectively. A uniform and compact surface with stoichiometric composition was also obtained for the 600 °C-deposited sample. The average transmittance of all the TiO₂ films in the visible range exceeded 91% and the optical band gap of the films varied from 3.31 to 3.41 eV.     

Influence of deposition parameters on the structure and microstructure of Bi12TiO20 films obtained by pulsed laser deposition

The structure, morphology and surface roughness of Bi₁₂TiO₂₀ (BTO) thin films grown on R-sapphire by pulsed laser deposition (PLD) were studied at different substrate temperatures, target-substrate distances, oxygen pressures and laser-pulse repetition rates. Although the substrate temperature seems to be the most important experimental parameter, the gas pressure and the target–substrate distance played important role on the phase formed and film thickness, with a significant effect of the laser-pulse repetition rate on the films thickness and preferred orientation of the deposited film. Single-phase γ-Bi₁₂TiO₂₀ was obtained on substrates at 650?°C, while several BTO metastable phases were observed in films deposited on substrates at temperatures between 500 and 600?°C. By the first time, thin films of pure and textured δ-Bi₁₂TiO₂₀ were successfully growth on substrates at 450?°C. When annealed, all the films deposited at lower temperatures resulted in the thermodynamically stable γ-Bi₁₂TiO₂₀.     

Fabrication of a new type of organic-inorganic hybrid superlattice films combined with titanium oxide and polydiacetylene

We fabricated a new organic-inorganic hybrid superlattice film using molecular layer deposition [MLD] combined with atomic layer deposition [ALD]. In the molecular layer deposition process, polydiacetylene [PDA] layers were grown by repeated sequential adsorption of titanium tetrachloride and 2,4-hexadiyne-1,6-diol with ultraviolet polymerization under a substrate temperature of 100°C. Titanium oxide [TiO₂] inorganic layers were deposited at the same temperatures with alternating surface-saturating reactions of titanium tetrachloride and water. Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of the nanohybrid films. The transmission electron microscopy analysis of the titanium oxide cross-linked polydiacetylene [TiOPDA]-TiO₂ thin films confirmed the MLD growth rate and showed that the films are amorphous superlattices. Composition and polymerization of the films were confirmed by infrared spectroscopy. The TiOPDA-TiO₂ nanohybrid superlattice films exhibited good thermal and mechanical stabilities.     

Impact on nonlinear/linear optical and structural parameters in quaternary In15Ag10S15Se60 thin films upon annealing at different temperatures

In the present study, the effect of thermal annealing on structural, linear, and nonlinear optical properties of quaternary chalcogenide In₁₅Ag₁₀S₁₅Se₆₀ thin film has been reported. The bulk sample synthesized by the melt quenching technique was used for the thin film preparation by the thermal evaporation method. Post deposition, the thin films were annealed at different temperatures like 100 °C, 150 °C, 200 °C, and 250 °C for 2 hs. X-ray diffraction (XRD) and Raman spectroscopy were used for structural studies, which showed the increase in crystalline phases with the increase of annealing temperature. The morphological images taken by field emission scanning electron microscope (FESEM) showed the densification and enlargement of scattered grains for annealed films. Furthermore, the constituent elements and their percentage in the sample were confirmed by Energy dispersive X-ray analysis (EDX). The linear and nonlinear optical parameters were calculated from the transmittance data obtained from UV–Vis spectroscopy in the wavelength range of 600–1100 nm. There is a large reduction in third-order nonlinear susceptibility at the higher annealing temperature. Subsequently, the transmission increased, whereas the absorption decreased with the annealing temperature. The extinction coefficient decreased while there was an increase in optical bandgap for the annealed films due to the decrease in surface defects and disorder, which forms the localized states in the bandgap. The oscillator energy, dispersion energy, dielectric constant, optical conductivity were calculated and discussed in detail. The change in both linear and nonlinear parameters by thermal annealing could be useful for controlling the optical properties of In₁₅Ag₁₀S₁₅Se₆₀ thin film, which could be the preferable candidate for numerous photonic applications.