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达林顿管是一种两级或多级的复合管。功率型的达林顿管的功率级是后极,而后极功率管的δVbe不能直接测量,所以,达林顿管瞬态热阻测量仪器的研发一直是一个的难点。从晶体管的瞬态热阻测量原理出发,研究了达林顿管的热阻测量方法。此方法也可以引申到达林顿管稳态热阻的检测中。 相似文献
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实验评估了600V,4A碳化硅(SiC)肖特基二极管(英飞凌,SDP04S06)的性能。作为一种重点的应用,作者考虑选用一种300W,按平均电流模式控制的Boost功率因数校正器(PFC)。作者测量了采用该型号SiC肖特基二极管和采用两种超快、软恢复的硅功率二极管(RURD460和目前正被列入的STTH5R06D)制成的整机的效率、开关损耗、二极管损耗和电磁干扰(EMI)等特性。本文比较了这些结果,特别是定量地考察了SiC二极管提供的恢复电流的减小对该变换器行为的这些关键参数的影响。基于试验结果,本文表明在功率因数校正器设计中,采用SiC二极管只是在高开关频率时才是合算的。 相似文献
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英飞凌科技股份公司近日宣布推出采用TO-220 FullPAK封装的第二代SiC(碳化硅)肖特基二极管。新的TO-220 FullPak产品系列不仅延续了第二代ThinQ! TM SiC肖特基二极管的优异电气性能,而且采用全隔离封装,无需使用隔离套管和隔离膜,使安装更加简易、可靠。独具特色的是,新的TO220 FullPAK器件的内部结到散热器的热阻与标准 相似文献
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SiC MOSFET分立器件的并联结构已在中大功率应用中广泛使用,为了充分利用并联的优势,需解决并联动态电流不均衡问题.在SiC MOSFET特性参数中,阈值电压是影响并联动态均流特性最主要的参数.通过建立SiC MOSFET双管并联的电路模型,探究了并联动态电流不均衡的补偿策略,推导了阈值电压对SiC MOSFET开关管动态均流程度影响的公式.建立了含寄生电感的双管并联电路模型,提出了两种双管并联动态电流不均衡的无源补偿策略,即基于共源极寄生电感的补偿策略以及基于开尔文源极电感和功率源极寄生电感并联的补偿策略.通过仿真比较了两种无源补偿策略下的开关总损耗.最后,优化了基于开尔文源极电感和功率源极寄生电感并联的补偿策略,并通过双脉冲实验验证了此并联补偿策略下的动态均流效果. 相似文献
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为研究基于碳化硅(SiC)陶瓷封装的高功率半导体激光器的散热性能,将其与常用的氮化铝(AlN)陶瓷进行对比,使用基于结构函数法的热阻仪分别测量SiC和AlN封装F-mount器件的热阻值,得到SiC器件的总热阻约为3.0℃·W~(-1),AlN的约为3.4℃·W~(-1),SiC器件的实测热阻值比AlN器件低14.7%,实验结果表明SiC过渡热沉具有较好的散热性能。实验进一步测试了两种过渡热沉封装器件的输出性能,在16A连续电流注入时,915nm波段的SiC器件单管输出功率为15.9 W,AlN为15 W,测试结果显示SiC封装的器件具有更高的功率输出水平。 相似文献
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Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes 总被引:2,自引:0,他引:2
Q. Zhang V. Madangarli M. Tarplee T. S. Sudarshan 《Journal of Electronic Materials》2001,30(3):196-201
Current-voltage (I–V) characteristics of n- and p-type 6H−SiC Schottky diodes are compared in a temperature range of room
temperature to 400°C. While the room temperature I–V characteristics of the n-type Schottky diode after turn-on is more or
less linear up to ∼100 A/cm2, the I–V characteristics of the p-type Schottky diode shows a non-linear behavior even after turn-on, indicating a variation
in the on-state resistance with increase in forward current. For the first time it is shown that at high current densities
(>125 A/cm2) the forward voltage drop across p-type Schottky diodes is lower than that across n-type Schottky diodes on 6H−SiC. High
temperature measurements indicate that while the on-state resistance of n-type Schottky diodes increases with increase in
temperature, the on-state resistance of p-type Schottky diodes decreases with increase in temperature up to ∼330 K. 相似文献
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The goal of this study is to improve the thermal characteristics of high power LED (light-emitting diode) package using a flat heat pipe (FHP). The heat-release characteristics of high power LED package are analyzed and a novel flat heat pipe (FHP) cooling device for high power LED is developed. The thermal capabilities, including startup performance, temperature uniformity and thermal resistance of high power LED package with flat heat pipe heat sink have been investigated experimentally. The obtained results indicate that the junction temperature of LED is about 52 °C for the input power of 3 W, and correspondingly the total thermal resistance of LED system is 8.8 K/W. The impact of the different filling rates and inclination angles of the heat pipe to the heat transfer performance of the heat pipe should be evaluated before such a structure of heat pipe cooling system is used to cool high power LED system. 相似文献
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Thermal Investigation of GaN-Based Laser Diode Package 总被引:1,自引:0,他引:1
Wong Joon Hwang Tae Hee Lee Jong Hwa Choi Hyung Kun Kim Ok Hyun Nam Park Y.J. Moo Whan Shin 《Components and Packaging Technologies, IEEE Transactions on》2007,30(4):637-642
We investigated thermal behavior of GaN-based laser diode (LD) packages as a function of cooling systems, die attaching materials, chip loading conditions, and optical performances. The electrical thermal transient technique was employed for the thermal measurement of junction temperature and thermal resistance of LD packages. The results demonstrate that the total thermal resistance of LD packages is controlled mainly by the packaging design rather than the chip structure itself. Significant changes in thermal resistance with input current were observed under a natural cooling system because of the sensitive change in the heat transfer coefficient with the change in temperature. Employment of PbSn as a die attachment was more advantageous over the Ag-paste in the thermal behavior of LD packages. The LD package with epi-down structure resulted in the lower thermal resistance compared to one with epi-up structure. A continuous increase in junction temperature was measured after lasing. It was attributed to an increase in the thermal resistance of LD when it took the optical power into an account. Effective input power was decreased by the lasing and led to high thermal resistance values. 相似文献
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This study investigates the heat generation behavior of packaged normally-on multi-finger AlGaN/GaN high electron mobility transistors (HEMTs) that are cascoded with a low-voltage MOSFET (LVMOS) and a SiC Schottky barrier diode (SBD). By foremost carrying out electro-thermal simulation and related thermal measurements with infrared thermography and Raman spectroscopy for basic 5 mm GaN HEMTs, the location of hot spot in operating device can be obtained. Based on the outcome, further packaged cascode GaN HEMT is analyzed. A hybrid integration of the GaN-HEMT, LVMOS, and SiC SBD are assembled on a directly bonded copper (DBC) substrate in the four-pin metal case TO-257 package. The metal plate is used as both the source terminal and heat sink. The analytical results of thermal investigation are confirmed by comparing them with the infrared thermographic measurements and numerical results obtained from a simulation using Ansys Icepak. For a power dissipation of less than 11.8 W, the peak temperature of the GaN HEMTs is 118.7 °C, obtained from thermal measurements. 相似文献
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The influence of high temperature (up to 800C) annealing on the current-voltage characteristics of n-type 6H-SiC Schottky
diodes is presented. Our experimental results indicate that high-temperature annealing can result in the improvement of the
forw ard and reverse electrical characteristics of SiC Schottky diodes by repairing any leaky low barrier secondary diode
parallel to the primary diode that may be present due to the barrier inhomogeneities at the Schottky contact interface. 相似文献
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McNutt T.R. Hefner A.R. Jr. Mantooth H.A. Duliere J. Berning D.W. Singh R. 《Power Electronics, IEEE Transactions on》2004,19(3):573-581
Dynamic electrothermal circuit simulator models are developed for silicon carbide power diodes. The models accurately describe the temperature dependence of on-state characteristics and reverse-recovery switching waveforms. The models are verified for the temperature dependence of the on-state characteristics, and the di/dt, dv/dt, and temperature dependence of the reverse-recovery characteristics. The model results are presented for 1500 V SiC Merged PiN Schottky (MPS) diodes, 600 V Schottky diodes, and 5000 V SiC PiN diodes. The devices studied have current ratings from 0.25 A to 5 A and have different lifetimes resulting in different switching energy versus on-state voltage trade-offs. The devices are characterized using a previously reported test system specifically designed to emulate a wide range of application conditions by independently controlling the applied diode voltage, forward diode current, di/dt, and dv/dt at turn-off. A behavioral model of the test system is implemented to simulate and validate the models. The models are validated for a wide range of application conditions for which the diode could be used. 相似文献
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逆导型IGBT (RC-IGBT)是将IGBT功能与续流二极管功能集成在一个芯片上,实现了在相同封装体积下,可获得更大的功率密度,由于IGBT与二极管紧密的移相热耦合,在相同散热条件下,RC-IGBT允许的工作结温更高.同时,RC-IGBT的本征二极管还受到栅极电压控制,通过栅极电压控制策略,可以降低器件损耗,优化系统特性.介绍了RC-IGBT的基本工作原理和二极管退饱和控制特性,研究了RC-IGBT应用于变流器系统的损耗优化控制策略,分析了应用RC-IGBT的单相脉宽调制(PWM)整流器的工作特性与损耗特性.通过一个具体的应用工况运行仿真,分析对比了RC-IGBT和普通IGBT在PWM整流器应用中的损耗特性.结果显示,应用RC-IGBT后总体损耗有所降低,验证了RC-IGBT退饱和脉冲控制的有效性. 相似文献
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J. P. Henning K. J. Schoen M. R. Melloch J. M. Woodall J. A. Cooper Jr. 《Journal of Electronic Materials》1998,27(4):296-299
This paper presents a study of the rectifying properties of heavily doped polycrystalline silicon (polysilicon) on 4H silicon
carbide (4H-SiC). Current properties and barrier heights were found using analysis of the heterojunction. This revealed that
Schottky analysis would be valid for the large barrier height devices. Isotype and an-isotype devices were fabricated on both
p-type and n-type SiC and the electrical characteristics were investigated using capacitance vs voltage measurements, current
vs voltage measurements (I-V), and temperature I-V measurements. Extraction of the barrier height, built-in potential, and
Richardson constant were made and then compared to theoretical values for the heterojunction. Temperature I-V measurements
demonstrated that the current transport mechanism is thermionic emission, confirming the validity of the Schottky diode model.
The I-V characteristics show near ideal diode rectifying behavior and the capacitance-voltage characteristics show ideal junction
space charge modulation for all polysilicon/SiC combinations. These experimental results match well with heterojunction band-offset
estimated barrier heights and demonstrate that the barrier height of the polysilicon/4H SiC interface may be controlled by
varying the polysilicon doping type. 相似文献