一种高性能低功耗SEU免疫锁存器

为了缓解瞬态故障引发的软错误,提出一种对单粒子翻转完全免疫的加固锁存器。该锁存器使用4个输入分离的反相器构成双模互锁结构,使用具有过滤瞬态故障能力的C单元作为输出级,采用快速路径设计和钟控设计以提升速度和降低功耗。Hspice仿真结果表明,该电路结构没有未加固节点,所有节点都具有自恢复能力,适用于门控时钟电路。相比于SIN-LC,Cascode ST,FERST,TMR和SEUI加固等类型的锁存器,该锁存器的延迟、功耗、功耗延迟积平均下降82.72%,25.45%,84.24%。此外,该电路结构受工艺角、供电电压和温度扰动的影响较小。     

一种低开销的三点翻转自恢复锁存器设计

随着集成电路特征尺寸的不断缩减,在恶劣辐射环境下,纳米级CMOS集成电路中单粒子三点翻转的几率日益增高,严重影响可靠性。为了实现单粒子三点翻转自恢复,该文提出一种低开销的三点翻转自恢复锁存器(LC-TNURL)。该锁存器由7个C单元和7个钟控C单元组成,具有对称的环状交叉互锁结构。利用C单元的阻塞特性和交叉互锁连接方式,任意3个内部节点发生翻转后,瞬态脉冲在锁存器内部传播,经过C单元多级阻塞后会逐级消失,确保LC-TNURL锁存器能够自行恢复到正确逻辑状态。详细的HSPICE仿真表明,与其他三点翻转加固锁存器(TNU-Latch, LCTNUT, TNUTL, TNURL)相比,LC-TNURL锁存器的功耗平均降低了31.9%,延迟平均降低了87.8%,功耗延迟积平均降低了92.3%,面积开销平均增加了15.4%。相对于参考文献中提出的锁存器,LC-TNURL锁存器的PVT波动敏感性最低,具有较高的可靠性。     

一种低开销的三点翻转自恢复锁存器设计

随着集成电路特征尺寸的不断缩减,在恶劣辐射环境下,纳米级CMOS集成电路中单粒子三点翻转的几率日益增高,严重影响可靠性.为了实现单粒子三点翻转自恢复,该文提出一种低开销的三点翻转自恢复锁存器(LC-TNURL).该锁存器由7个C单元和7个钟控C单元组成,具有对称的环状交叉互锁结构.利用C单元的阻塞特性和交叉互锁连接方式,任意3个内部节点发生翻转后,瞬态脉冲在锁存器内部传播,经过C单元多级阻塞后会逐级消失,确保LC-TNURL锁存器能够自行恢复到正确逻辑状态.详细的HSPICE仿真表明,与其他三点翻转加固锁存器(TNU-Latch,LCTNUT,TNUTL,TNURL)相比,LC-TNURL锁存器的功耗平均降低了31.9％,延迟平均降低了87.8％,功耗延迟积平均降低了92.3％,面积开销平均增加了15.4％.相对于参考文献中提出的锁存器,LC-TNURL锁存器的PVT波动敏感性最低,具有较高的可靠性.     

一种容SEU的新型自恢复锁存器

针对单粒子翻转(SEU)的问题,提出了一种容SEU的新型自恢复锁存器。采用1P-2N单元、输入分离的钟控反相器以及C单元,使得锁存器对SEU能够实现自恢复,可用于时钟门控电路。采用高速通路设计和钟控设计,以减小延迟和降低功耗。相比于HLR-CG1,HLR-CG2,TMR,HiPer-CG锁存器,该锁存器的功耗平均下降了44.40%,延迟平均下降了81%,功耗延迟积(PDP)平均下降了94.20%,面积开销平均减少了1.80%。     

基于C单元反馈回路的容SEU锁存器设计

随着电子技术的不断发展,集成电路的特征尺寸不断缩小,导致电路对宇宙高能粒子引发的单粒子翻转愈发敏感。提出了一种对单粒子翻转完全免疫的抗辐射加固锁存器。该锁存器利用具有过滤功能的C单元构建反馈回路,并在锁存器末端使用钟控C单元来阻塞传播至输出端的软错误。HSPICE仿真结果显示,在与TMR锁存器同等可靠性的情况下,该锁存器面积下降50%,延迟下降92%,功耗下降47%,功耗延迟积下降96%。     

考虑多时钟周期瞬态脉冲叠加的锁存窗屏蔽模型

集成电路工艺水平的提升,使得由单粒子瞬态脉冲造成的芯片失效越发不容忽视．为了准确计算单粒子瞬态脉冲对锁存器造成的失效率,提出一种考虑多时钟周期瞬态脉冲叠加的锁存窗屏蔽模型．使用提出的考虑扇出重汇聚的敏化路径逼近搜索算法查找门节点到达锁存器的敏化路径,并记录路径延迟;在扇出重汇聚路径上,使用提出的脉冲叠加计算方法对脉冲进行叠加;对传播到达锁存器的脉冲使用提出的锁存窗屏蔽模型进行失效率的计算．文中的锁存窗屏蔽模型可以准确计算扇出重汇聚导致的脉冲叠加,并对多时钟周期情形具有很好的适用性．针对ISCAS’85基准电路的软错误率评估结果表明,与不考虑多时钟周期瞬态脉冲叠加的方法相比,文中方法使用不到2倍的时间开销,平均提高7．5％的软错误率评估准确度．     

一种自恢复容SEU锁存器的设计

随着集成电路工艺水平的不断提高、器件尺寸的不断缩小以及电源的不断降低,传统的锁存器越发容易受到由辐射效应引起的软错误影响。为了增强锁存器的可靠性,提出了一种适用于低功耗电路的自恢复SEU加固锁存器。该锁存器由传输门、反馈冗余单元和保护门C单元构成。反馈冗余单元由六个内部节点构成,每个节点均由一个NMOS管和一个PMOS管驱动,从而构成自恢复容SEU的结构。在45 nm工艺下,使用Hspice仿真工具进行仿真,结果表明,与现有的加固方案FERST[1]结构相比,在具备相同面积开销和单粒子翻转容忍能力的情况下,提出的锁存器不仅适用于时钟门控电路,而且节省了61.38%的功耗-延迟积开销。     

一种低开销的抗SEU锁存器

随着微电子技术的不断进步,集成电路工艺尺寸不断缩小,工作电压不断降低,节点的临界电荷越来越小,空间辐射引起的单粒子效应逐渐成为影响芯片可靠性的重要因素之一。针对辐射环境中高能粒子对锁存器的影响,提出了一种低开销的抗SEU锁存器(LOHL)。该结构基于C单元的双模冗余,实现对单粒子翻转的防护,从而降低软错误发生的概率。Spice模拟结果显示,与其他相关文献中加固锁存器相比,LOHL在电路面积、延迟和延迟-功耗积上有优势。     

一种新型抗多节点翻转加固锁存器

在纳米锁存器中,由电荷共享效应导致的多节点翻转(MNU)正急剧增加,成为主要的可靠性问题之一。尽管现有的辐射加固锁存器能够对MNU进行较好的容错,但是这些加固锁存器只依赖于传统的冗余技术进行加固,需要非常大的硬件开销。基于辐射翻转机制(瞬态脉冲翻转极性)设计了一种新型抗MNU锁存器。该锁存器可有效减少需保护的节点数(敏感节点数)和晶体管数,因此可减少电路的硬件开销。由于至少存在2个节点可以保存正确的值,因此任何单节点翻转(SNU)和MNU都可以被恢复容错。基于TSMC 65 nm CMOS工艺进行仿真,结果显示,设计的加固锁存器的电路面积、传播延迟和动态功耗分别为19.44μm²,16.96 ps和0.91μW。与现有的辐射加固锁存器相比,设计的锁存器具有较小的硬件开销功耗-延迟-面积乘积(PDAP)值,仅为300.02。     

一种新颖高效抗SEU/SET锁存器设计

随着工艺技术的发展,集成电路对单粒子效应的敏感性不断增加,因而设计容忍单粒子效应的加固电路日益重要.提出了一种新颖的针对单粒子效应的加固锁存器设计,可以有效地缓解单粒子效应对于电路芯片的影响.该锁存器基于DICE和C单元的混合结构,并采用了双模冗余设计.SPICE仿真结果证实了它具有良好的抗SEU/SET性能,软错误率比M.Fazeli等人提出的反馈冗余锁存器结构减少了44.9%.与经典的三模冗余结构比较,面积开销减少了28.6%,功耗开销降低了超过47%.     

An advanced SEU tolerant latch based on error detection

This paper proposes a latch that can mitigate SEUs via an error detection circuit.The error detection circuit is hardened by a C-element and a stacked PMOS.In the hold state,a particle strikes the latch or the error detection circuit may cause a fault logic state of the circuit.The error detection circuit can detect the upset node in the latch and the fault output will be corrected.The upset node in the error detection circuit can be corrected by the Celement.The power dissipation and propagation delay of the proposed latch are analyzed by HSPICE simulations.The proposed latch consumes about 77.5％ less energy and 33.1％ less propagation delay than the triple modular redundancy (TMR) latch.Simulation results demonstrate that the proposed latch can mitigate SEU effectively.     

Time redundancy and gate sizing soft error-tolerant based adder design

In this paper, we propose an efficient and promising soft error tolerance approach for arithmetic circuits with high performance and low area overhead. The technique is applied for designing soft error tolerant adders and is based on the use of a fault tolerant C-element connecting a given adder output to one input of the C-element while connecting a delayed version of that output to the second input. It exploits the variability of the delay of the adder output bits, in which the most significant bits (MSBs) have longer delay than the least significant bits (LSBs), by adding larger delay to the LSBs and smaller delay to the MSBs to guarantee full fault tolerance against the largest pulse width of transient error (soft error) for the available technology with minimum impact on performance. To guarantee fault protections for transistors feeding outputs with smaller added delay, the technique utilizes transistor scaling to ensure that the injected fault pulse width is less than the added delay of the second output of the C-element. Simulation results reveal that the proposed technique takes precedence over other techniques in terms of failure rate, area overhead, and delay overhead. The evaluation experiments have been done based on simulations at the transistor level using HSPICE to take care of temporal masking combined with electrical masking. In comparison to TMR, the technique achieves 100% reliability with 31% reduction in area overhead without impacting performance in the case of a 32-bit adder, and 42% reduction in area overhead and 5% reduction in performance overhead in the case of a 64-bit adder. While our proposed technique achieves area reduction of 4.95% and 9.23% in comparison to CE-based DMR and Feedback-based DMR techniques in the case of a 32-bit adder, it achieves area reduction of 19.58% and 23.24% in the case of a 64-bit adder.     

An SEU resilient,SET filterable and cost effective latch in presence of PVT variations

This paper presents a single event upset (SEU) resilient, single event transient (SET) filterable and cost effective latch (referred to as RFEL) using 45 nm CMOS commercial technology. By means of triple mutual feedback CMOS structures, one of which is an input-split Schmitt trigger, and two of which are Muller C-elements, the internal nodes and output node of the latch are self-recoverable from single event upset regardless of the energy of a striking particle. The latch filters a much wider spectrum of single event transient on account of hysteresis property of the embedded input-split Schmitt trigger, and temporal redundancy in the grouped inputs of the Muller C-element at output stage. The latch performs with lower overheads regarding area, power, and delay than most of the single event upset and single event transient simultaneously tolerated latches as well. Simulation results show that the area-power-delay-pulse product of the latch is 65.58% saving on average, and Monte Carlo simulation results demonstrate the equivalent or even less sensitivity of the latch to process, and temperature variations, compared with the previous radiation hardened latches.     

一种低功耗低延迟的容忍DNU锁存器设计

随着集成电路器件特征尺寸的进一步减小,锁存器内部节点之间的距离越来越短.由于内部节点间的电荷共享效应,器件在空间辐射环境中频繁发生单粒子翻转(SEU),受影响节点由单节点扩展到双节点.文章提出了一种新型的锁存器加固结构,利用C单元固有的保持属性,实现对单节点翻转(SNU)和双节点翻转(DNU)的完全容忍.HSPICE仿...     

Low cost and highly reliable radiation hardened latch design in 65 nm CMOS technology

As a consequence of technology scaling down, gate capacitances and stored charge in sensitive nodes are decreasing rapidly, which makes CMOS circuits more vulnerable to radiation induced soft errors. In this paper, a low cost and highly reliable radiation hardened latch is proposed using 65 nm CMOS commercial technology. The proposed latch can fully tolerate the single event upset (SEU) when particles strike on any one of its single node. Furthermore, it can efficiently mask the input single event transient (SET). A set of HSPICE post-layout simulations are done to evaluate the proposed latch circuit and previous latch circuits designed in the literatures, and the comparison results among the latches of type 4 show that the proposed latch reduces at least 39% power consumption and 67.6% power delay product. Moreover, the proposed latch has a second lowest area overhead and a comparable ability of the single event multiple upsets (SEMUs) tolerance among the latches of type 4. Finally, the impacts of process, supply voltage and temperature variations on our proposed latch and previous latches are investigated.     

设计和表征一个65nm抗辐射标准单元库

提出了一个基于商用65nm工艺在晶体管级设计抗辐射数字标准单元库的方法。因为当C单元的两个输入是不同的逻辑值时输出会进入高阻模式,并保持输出逻辑电平不变,而当输入端有相同的逻辑值时,C单元的功能就像一个反相器的特性。因此它有把因为辐射粒子引起的单粒子翻转（SEU）效应或单粒子传输（SET）效应所产生的毛刺滤除掉的能力。在这个标准单元库中包含了在晶体管级使用C单元设计了抗辐射的触发器,以便于芯片设计者可以使用这个库来设计具有更高抗辐射能力和减小面积、功耗和延迟的芯片。在最后为了能表征标准单元在硅片上的延迟特性,一个基于环形振荡器的芯片结构用来测量每个单元的延迟,以及验证抗辐射能力。延迟测量结果跟版图后仿真结果偏差在10％以内。     

A proposed DG-FinFET based SRAM cell design with RadHard capabilities

The radiation induced soft errors have become one of the most important and challenging failure mechanisms in modern electronic devices. This paper proposes a new circuit level hardening technique for reduction of soft error failure rate in DG-FinFET (double gate FinFET) based static random access memory (SRAM). Analysis for 32 nm and 45 nm technology nodes is carried out. It is inferred from the paper that the proposed SRAM cell outperforms over DICE latch in terms of fault tolerance of external data and control lines, power dissipation and fast recovery when exposed to radiation for both the technology nodes. This is primarily due to the addition of extra transistors used to neutralize the effect of single event upset without affecting normal operations. Transistor count increase the area and write delay by 7% and 20% respectively over that of DICE latch. While read delay decreases by 14% for the proposed SRAM cell.