一种新型的低功耗指数补偿带隙基准

基于0.18 μm BCD工艺,设计了一种新型的低功耗指数补偿带隙基准。对高温段进行指数补偿,降低温漂;利用预稳压技术,引入负反馈环路以提高基准的电源电压抑制比。经过HSPICE仿真验证,基准输出电压为1.233 V,-15 ℃~145 ℃温度范围内的温度系数为3×10-6/℃;低频时电源电压抑制比为-94 dB,供电电压在2.8~5 V变化时,基准输出电压的线性调整率仅为0.000 5%,当供电电源为2.8 V时,整体静态电流仅为3.8 μA。     

一种带曲率补偿的高精度带隙基准源设计

基于OKI 0.5 μm BCD工艺,设计了一种带曲率补偿的低温漂带隙基准源。采用Brokaw带隙基准核心结构,引入一个高阶效应的电流,对基准进行补偿。结合基准核心电路产生的无温度系数电压,利用简单的电路实现基准电流源的产生。仿真结果表明,在4.5 V供电电压下,-40 ℃~150 ℃温度范围内,基准电压的波动范围为1.1755~1.17625 V,温漂为3.9 ×10-6/℃,基准电流为3.635 μA,输出基准电流波动仅为2.2 nA,精度较高,低频时电路电源抑制比为-76 dB。     

一种分段曲率补偿带隙基准源设计

在传统带隙基准的基础上,设计了一种分段曲率补偿的低温漂带隙基准。利用NMOS管工作在亚阈值区域时漏电流和栅极电压的指数特性,在低温和高温段同时对基准电压进行曲率补偿,采用UMC 0.25μm BCD工艺进行仿真。仿真结果表明,电源电压5 V时,静态功耗电流为7.11μA;电源电压2.5~5.5 V,基准电压变化148μV;温度在–40~+145℃内,电路的温度系数为1.18×10–6/℃;低频时电源抑制比为–87 d B。     

一种具有高电源抑制比的带隙基准电压源

根据带隙基准电压源理论,在传统CMOS带隙电压源电路结构的基础上,采用曲率补偿技术,对一阶温度补偿电路进行高阶补偿,获得了一种结构简单,电源抑制比和温度系数等性能都较好的带隙电压基准源.该电路采用CSMC 0.5 μm标准CMOS工艺实现,用Spectre进行仿真.结果表明,在3.3 V电源电压下,在-30 ℃～125 ℃范围内,温度系数为3.2×10-6 /℃;在27 ℃下,10 Hz时电源抑制比(PSRR)高达118 dB,1 kHz时(PSRR)达到86 dB.     

一种曲率补偿的高精度带隙基准源设计

基于CSMC 0.5μm CMOS工艺,设计了一种带曲率补偿的低温漂带隙基准源。采用折叠式共源共栅放大器反馈结构带隙基准源,利用晶体管的VBE与IC的温度特性产生T1n T补偿量,对传统的带隙基准进行曲率补偿。仿真结果表明,在5 V供电电压下,-40~125℃温度范围内,基准电压的波动范围为1.2715~1.2720 V,温漂为3.0×10~(-6)/℃,低频时电路电源抑制比为-86 d B。     

宽温度范围高精度带隙基准电压源的设计

为了满足市场对宽温度范围、高精度带隙基准电压源的需求,本文设计制作了一种新型带隙基准电压电路。设计采用多点曲率补偿技术,在温度较低时采用指数频率补偿,高温时采用亚阈值指数曲率补偿。采用电压-电流转换器对分段补偿电流在输出端进行整合,进而在-55~150℃的温度范围内进行补偿,得到低温度系数的基准电压。设计的电路采用CSMC 0.5μm CMOS工艺验证,结果表明:5V电源电压下,输出1.25V的基准电压;在-55~150℃的温度范围内温度系数为2.5×10~(-6)/℃,在低频时,PSRR为-66dB。带隙基准电压源芯片面积为0.40mm×0.45mm。     

一种可修调的高精度低温漂带隙基准电压源

设计了一种可修调的高精度、低温漂、高电源电压抑制比的高阶温度补偿带隙基准电压源。在Brokaw型带隙基准电路结构的基础上,采用多晶硅电阻负温度系数补偿技术,可实现2阶曲率温度补偿,减小了基准电压的温漂;设计了电阻修调网络,保证了基准电压的高精度。电路基于标准双极工艺进行设计和制造,测试结果表明:在－55 ℃~125 ℃温度范围内,15 V电源电压下,基准源输出电压为2.5(1±0.24%) V,温度系数为1.2×10－5/℃,低频时的电源电压抑制比为－102 dB,静态电流为1 mA,重载时输出电流能力为10 mA。     

一种低功耗曲率补偿带隙基准电压源

设计了一种低功耗曲率补偿带隙基准电压源。利用亚阈值MOS管差分对,产生曲率补偿电流,对输出基准电压进行曲率补偿。采用低功耗运放来增强基准电压源的电源抑制能力,同时降低基准电压源的功耗。采用SMIC 0.18 μm 混合信号CMOS工艺进行设计。仿真结果表明,在1.5 V电源电压下,基准电压源的输出基准电压为1.224 V,在-40 ℃~125 ℃范围内的温度系数为1.440×10-6/℃~4.076×10-6/℃,电源抑制比为-77.58 dB,消耗电流为225.54 nA。     

一种具有大电流驱动能力的低温漂带隙基准电压源

基于XFAB 0.6 μm CMOS工艺,设计了一种具有大电流驱动能力的低温度系数带隙基准电压源。通过设置不同温度系数的电阻的比值,实现带隙基准的2阶曲率补偿。采用新的电路结构,使基准源具有驱动10 mA以上负载电流的能力。经过Hspice仿真验证,常温基准输出电压为2.496 V,-55 ℃~125 ℃温度范围内的温度系数是3.1×10-6/℃;低频时,电源电压抑制比为-77.6 dB;供电电压在4~6 V范围内,基准输出电压的线性调整率为0.005%/V;负载电流在0~10 mA范围内,基准输出电压波动为219 μV,电流源负载调整率为0.022 mV/mA。     

一种新型高精度曲率补偿的带隙基准源

采用2个双端差分输入放大器(DDIA),设计了一种新型高精度曲率补偿的带隙基准源。其中一个DDIA产生PTAT电流,得到1阶补偿的基准电压,另一个DDIA产生与温度非线性相关的补偿电压,对基准电压的温度曲线进行曲率补偿,得到高阶温度补偿的参考电压。该电路基于SMIC 0.18 μm标准CMOS工艺,仿真结果表明:在3.3 V电源电压下,基准输出电压为1.171 9 V;在-40 ℃～125 ℃的温度范围内,温度系数为1.48×10-6/℃;低频率时,电源抑制比(PSRR)为-66 dB。电源电压在2.5～4 V范围内,线性调整率为0.6 mV/V。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks