基于片上变压器耦合的CMOS功率放大器设计

设计了一个2 GHz全集成的CMOS功率放大器(PA),该PA的匹配网络采用片上变压器实现,片上变压器用来实现单端信号和差分信号之间的转换和输入、输出端的阻抗匹配。采用ADS Momentum软件对片上变压器进行电磁仿真,在2 GHz频点,输入、级间和输出变压器的功率传输效率分别为74.2%,75.5%和78.4%。该PA基于TSMC 65 nm CMOS模型设计,采用Agilent ADS软件进行电路仿真,仿真结果表明:在2.5 V供电电压、2 GHz工作频率点,PA的输入、输出完全匹配到50Ω(S11=–22.4 d B、S22=–13.5 d B),功率增益为33.2 d B,最高输出功率达到23.4 d Bm,最高功率附加效率(PAE)达到35.3%,芯片面积仅为1.01 mm2。     

一种新型的高效率RF-DC整流器设计

设计了一款能产生高输出电压的新型交叉耦合RF-DC整流器。为了最大化输出电压,该整流器在每个充电路径中仅经过一个MOS开关管,降低了串联损耗。采用SMIC 0.18 μm双阱CMOS工艺仿真模型模拟,在输入射频功率-13.52 dBm时,输出电压为1.66 V,转换效率达62%。     

Monolithic Power-Combining Techniques for Watt-Level Linear Power Amplifiers in 0.18 CMOS*

设计了三个输出功率为瓦级的线性CMOS功率放大器(PA),该PA主要应用于高速移动通讯。为了实现瓦级输出功率,两个工作频率为2.4 GHz 的PA采用片上并联合成变压器将多个功放级的输出电流信号相加,另一个工作频率为1.95 GHz的PA采用片上串联合成器将多个功放级的输出电压信号相加。同时在PA的设计过程中采用了如下线性度提高技术：有源偏置、二极管线性电路、多栅晶体管并联和谐波短路等。以上三款PA均采用TSMC 0.18 射频CMOS工艺进行设计并流片。根据测量结果,两个2.4 GHz PA的功率增益分别为33.2 dB、34.3 dB,最高输出功率分别为30.7 dBm、29.4 dBm,最高功率附加效率(PAE)分别为29%、31.3%。根据仿真结果,1.95GHz PA的功率增益、最高输出功率和最高PAE分别为：37.5dB、34.3 dBm和36.3%。     

一种基于自适应偏置的2.4 GHz CMOS功率放大器

提出了一种单端自适应偏置电路,该电路能够根据输入信号功率,动态地调整输出直流电压,以提升射频功率放大器(PA)的线性度及功率回退区域的效率。为验证该电路的功能,设计了一种2.4 GHz PA,该电路基于单端三级结构设计,采用0.18 μm CMOS工艺制造,电路输入及输出阻抗匹配网络均集成于片内。测试结果表明,PA的增益为26.8 dB,S11和S22均小于-10 dB,OP1 dB为23.5 dBm,功率回退6 dB点PAE和峰值PAE分别为14%和24%。该PA对WLAN、ZigBee等2.4 GHz设备具有一定的应用价值。     

一种60 GHz CMOS高效率功率放大器

为了满足短距离无线高速传输的应用需求,基于SMIC 90 nm 1P9M CMOS工艺,设计了一种可工作在60 GHz的功率放大器(PA)。该PA为单端三级级联结构。采用顶层金属方法,设计具有高品质因子的小感值螺旋电感,用于输入、输出和级间匹配电路,以提高电路的整体性能。通过减少传输损耗和输出匹配损耗,提高了附加功率效率。仿真结果表明,在1.2 V电源电压下,该PA的功率增益为17.2 dB,1 dB压缩点的输出功率为8.1 dBm,饱和输出功率为12.1 dBm,峰值功率附加效率为15.7%,直流功耗为70 mW。各性能指标均满足60 GHz通信系统的要求。     

一种基于 ６５ ｎｍ ＣＭＯＳ 工艺的 ７７ ＧＨｚ 宽带功率放大器

本文采用65 nm CMOS工艺设计了一款基于四路功率合成的77 GHz （E波段）功率放大器。采用电容中和技术抵消密勒电容的负面效应;利用功率合成技术解决MOS管低击穿电压引起的低输出电压摆幅的问题,将多路输出功率高效合成以实现高功率输出。采用共轭匹配和多频点叠加的带宽拓展技术,有效实现电路阻抗匹配和带宽拓展。后仿真结果表明,在79 GHz处,该功率放大器的最大增益为20.5 dB,-3dB带宽为64～86 GHz,输出功率1dB压缩点为12.7 dBm,饱和输出功率16.6 dBm,峰值功率附加效率为16.5%。该功率放大器版图面积为0.29 mm2;在1.2 V供电电压下,功耗为211 mW。     

S波段35W GaN功率MMIC

报道了一款采用两级拓扑结构的2～4 GHz宽带高功率单片微波功率放大器芯片.放大器采用了微带结构,并使用电抗匹配进行设计,重点在于宽带功率效率平坦化设计.经匹配优化后放大器在2～4 GHz整个频带内脉冲输出功率大于35 W,小信号增益达到22 dB,在2.4 GHz频点处峰值输出功率达到40 W,对应的功率附加效率为3...     

基于GaN器件的连续型高效宽带功率放大器设计*

提出一种高效宽带功率放大器的设计方法,并基于GaN HEMT 器件CGH40010F 设计了验证电路。利用功放管输出寄生参数的等效网络,将基于连续型功放理论得到的负载阻抗转换到封装参考面上,并利用多谐波双向牵引技术对转换后的负载阻抗进行适当调整,使二次谐波负载阻抗位于高效率区以及基频负载阻抗能够获得高功率附加效率和高输出功率。谐波阻抗位于高效率区使得匹配网络的设计简化为基频匹配网络的设计,降低了对谐波阻抗匹配的难度和宽带匹配网络设计的复杂度。实验结果表明:在1GHz -3GHz 工作频带(相对带宽100%)内,功率附加效率在53%-64.6%之间,输出功率为39.5±2dBm,增益为11.5±2dB,二次谐波小于-15dBc,三次谐波小于-25dBc。     

CMOS超高频整流器

提出了一个适用于无源UHF RFID标签芯片的全CMOS整流器.整流器包括射频-直流转换电路、偏置电路、直流-直流转换电路和振荡器电路.整流器的工作频率范围是860～960 MHz.基于0.18μm,1p6m的标准数字CMOS工艺,设计并实现了无源UHF RFID标签芯片的整流器.该设计采用开关电容电路技术动态地消除了CMOS管开启电压的问题,在标准数字CMOS工艺下实现了高效率的超高频整流器.整流器的面积为180μm×140μm.当输入900MHz,-16dBm的射频信号时,整流器的输出电压为1.2V,启动时间为980μs.     

CMOS衬底调制阈值调整型RF-DC整流器

基于CMOS交叉耦合桥式射频整流器结构,在MOS整流管的栅极与衬底之间引入耦合电容,利用衬底调制效应动态调整MOS整流管的阈值电压,从而提高射频整流器的输出电压,减小稳定时间。对整流器工作原理进行了分析,对电路进行了仿真。结果表明,改进后的CMOS交叉耦合桥式整流器在输入功率为－16 dBm@900 MHz时,输出电压为1.48 V,输出电压和稳定时间分别比传统电路提高了13 mV和22 μs。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks