一种超低温漂低功耗全CMOS基准电压源

提出了一种超低温漂、低功耗亚阈值全CMOS基准电压源。利用工作在亚阈值区的3.3 V MOS管与1.8 V MOS管的栅源电压差,产生具有负温度系数的ΔVTH和具有正温度系数的VT,经过相互调节,得到与温度无关的基准电压。采用了共源共栅电流镜,以降低电源抑制比(PSRR)和电压调整率。基于SMIC 0.18 μm CMOS工艺对电路进行了仿真。仿真结果表明,在-22 ℃~142 ℃温度范围内,温度系数为2.8×10-6/℃;在1.3~3.3 V电源电压范围内,电压调整率为0.48%;频率为100 Hz时,PSRR为-62 dB;功耗仅为191 nW,芯片面积为0.005 mm²。     

一种低功耗高PSRR CMOS基准电压源

提出了一种采用新颖负温漂系数电流源补偿结构的高性能基准电压源。利用工作在亚阈值区的两个MOS管的栅源电压差与工作在线性区的MOS管的漏电流关系,产生补偿电流,使输出电压对温度不敏感。提出的负温漂电流源结构没有使用传统大电阻,不仅保证了低功耗,还有效减小了芯片面积。采用共源共栅的电流源结构,提高了电源抑制比。基于TSMC 0.18 QUOTEμmμm CMOS工艺进行设计仿真。仿真结果表明,在-35 ℃~150 ℃范围内,温漂系数为8.3×10-6/℃。电源电压为1.3~3.3 V时,电压调整率为0.21%,电源抑制比为-81.2 dB@100 Hz,功耗仅为184.7 nW。芯片面积为0.006 mm²。     

一种高精度超低功耗基准电压源

提出了一种超低功耗、无BJT的基于亚阈值CMOS特性的基准电压源。采用正负温度系数电流求和的方式来获得与温度无关的电流,再转换成基准电压;采用共源共栅电流镜来提高电源电压抑制比和电压调整率。基于SMIC 0.18 μm CMOS工艺进行仿真,结果表明,在-20℃~135 ℃温度范围内,温漂系数为2.97×10-5/℃;在0.9~3.3 V电源电压范围内,电压调整率为0.089%;在频率为100 Hz时,电源电压抑制比为-74 dB,电路功耗仅有230 nW。     

一种低功耗曲率补偿带隙基准电压源

设计了一种低功耗曲率补偿带隙基准电压源。利用亚阈值MOS管差分对,产生曲率补偿电流,对输出基准电压进行曲率补偿。采用低功耗运放来增强基准电压源的电源抑制能力,同时降低基准电压源的功耗。采用SMIC 0.18 μm 混合信号CMOS工艺进行设计。仿真结果表明,在1.5 V电源电压下,基准电压源的输出基准电压为1.224 V,在-40 ℃~125 ℃范围内的温度系数为1.440×10-6/℃~4.076×10-6/℃,电源抑制比为-77.58 dB,消耗电流为225.54 nA。     

高电源抑制比低温度系数超低功耗基准电压源

在0.18 μm标准CMOS工艺模型下,利用亚阈值及深线性区MOS管的特性,设计了一种新颖的偏置电流产生电路,并采用此电路设计出一种具有高电源抑制比、低温度系数的全MOS型基准电压源。该电压源采用全MOS结构,不使用电阻,功耗超低。电源电压在0.9~3 V变化时,该电压源均可正常工作,输出电压约为558 mV。1.2 V电源电压下,在－55 ℃~100 ℃温度范围内,该电压源的温度系数为2.3×10-5/℃,低频电源抑制比为－81 dB,总功耗约为127 nW。     

一种0.6 V CMOS基准电压源的设计

基于低压技术,利用亚阈值区MOS管代替寄生BJT管,设计了一种工作在低电源电压下的基准电压源,并对基准电压进行了温度补偿。采用TSMC 0.18 μm CMOS工艺对电路进行了设计和仿真。仿真结果显示:电路正常工作的最低电源电压为0.6 V,当电源在0.6~2.0 V范围内变化,基准输出电压仅变化了1.75 mV;在0.6 V电源电压下,－20 ℃~125 ℃温度范围内,温度系数为2.8×10－5/℃,电源抑制比为52.47 dB@10 kHz,整个电路的功耗仅为12 μW。     

一种低功耗亚阈值全MOS管基准电压源的设计

分析了工作在亚阈值区、线性区和饱和区的MOS晶体管不同电流特性,设计了一种低功耗全MOS基准电压源电路。使用工作在线性区的MOS晶体管代替普通常规电阻,使整个电路实现全MOS基准源的特性,同时有效减小电路芯片面积,并且输出基准电压为线性区MOS管提供偏压以进一步降低功耗。基于SMIC 0.18μm CMOS工艺设计电路。仿真结果表明此电路在1.8 V电源电压下,–50~+150℃的温度系数为22.6×10–6/℃,基准电压源输出电压约为992 m V,25℃时静态电流为327.3 n A,电路总静态功耗为0.59μW,10 k Hz时的电源抑制比为–25.36 d B。     

一种高电源抑制比的全MOS电压基准源设计

基于MOS管在亚阈值区、线性区和饱和区的不同导电特性,采用TSMC 0.18 μm CMOS工艺,设计了一种全MOS结构的电压基准源。为了改进核心电路,通过设计并优化预抑制电路,使整个电路实现了高电源电压抑制比的输出电压。对电路进行仿真,当电源电压大于1.5 V时,电路进入正常工作状态;在1.8 V电源电压下,-20 ℃~120 ℃范围内,温度系数为1.04×10-5/℃,该电压基准源的输出电压为0.688 V;低频时,电源电压抑制比达到-159.3 dB,在1 MHz时电源电压抑制比为-66.8 dB,功耗小于9.83 μW。该电压基准源能应用于高电源电压抑制比、低功耗的LDO电路中。     

一种高性能的亚阈值基准电压源设计

本文给出了一种基于亚阈值MOS特性的基准电压源.通过使用线性区工作的MOS管代替传统电阻来消除掉迁移率和电流的温度影响,拓宽了温度范围,改善了性能.采用0.5μmCMOS工艺进行仿真.结果表明电路能在2.5～8V范围内工作,线性调整率为0.3mV/V.在3.3V工作电压下,输出基准在-55℃到150℃温度范围内温度系数为7.3ppm/℃,静态功耗为13.8μW,1kHz下电源抑制比为-53dB.该基准电压源的设计能满足宽温度范围、低温漂、低功耗和高电源抑制比的要求.     

一种高精度二阶温度补偿带隙基准电路设计

基于通过负温度系数电压控制工作于亚阈值区MOS管栅压产生随温度变化的补偿电流原理,采用中芯国际0.18μm CMOS工艺,设计了一款高精度二阶温度补偿带隙基准电压源。测试结果表明,当电源电压大于1.6V时,电路能够产生稳定的1.21V输出电压;在电源电压为1.6~3.4V,-20~135℃温度范围内,最小温度系数为2×10-6/℃,最大温度系数为3.2×10-6/℃;当电源电压在1.6~3.4V之间变化时,输出电压偏差为0.6mV,电源调整率为0.34mV/V;在1.8V电源电压下,电源抑制比为69dB,因此能够适应于高精度基准源。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first