一种适用于探测器读出系统的LVDS芯片的研制

研制了一种适用于高能物理中探测器读出系统的LVDS芯片,采用极低的电压摆幅实现高速差动传输数据,可以实现点对点或一点对多点的连接和传输。芯片包括驱动和接收两部分,均采用0.35um/3.3 V CMOS工艺设计,测试结果显示芯片基本达到预期研制目标。     

空间辐射探测器滤波电路的设计

为满足粒子辐射探测器高压电源高稳定、低纹波的要求,设计一种LC和RC混合滤波电路来降低电源纹波,并进行理论分析、PSpice仿真和试验对结果进行验证。按照这种设计实现的某型号卫星高能粒子探测器的高压电源,输出电压稳定、纹波系数小,达到设计目的。试验证明这种电路设计简单、高效,可为相关电路设计提供参考。     

一种飞行时间法读出电路

本文介绍了北京谱仪飞行时间法电子学中的读出电路部分。它同时测量闪烁探测器的信号到达时间和信号的电荷量,以利用电荷量对时间移动进行离线修正。     

基于GEM探测器的数字读出芯片研制

研制了一种适用于高能物理GEM探测器读出系统的数字芯片。芯片采用PAD读出方式,对GEM探测器的输出直接采样,对采样到的信号放大并成形,判断该输入是否超过由外部DAC设定的阈值,给出判断结果,并按照一个串行协议读出。芯片采用0.35μm/3.3 V CMOS工艺设计,后仿真结果显示芯片达到预期研制目标。     

一种新型半导体探测器的应用

介绍了一种测量X射线的Si-PIN电制冷半导体探测器,以及它在X射线谱分析中的应用。由于该探测器采用了电制冷方法,从而摆脱了传统的Si(Li)探测器在使用和保存时必须定期向其添加液氮的麻烦。     

基于半导体集成电路辐射效应的空间辐射环境探测器

空间辐射环境能够引起半导体集成电路发生的总剂量效应、单粒子效应等辐射效应,可以被用来进行空间辐射环境监测。在一定条件下,基于此原理的探测器具有常规的面垒型探测器以及PIN型探测器等所不具备的优点。尤其适合航天器舱内带电离子探测和用于航天医学的个人辐射剂量探测。介绍了三种基于半导体器件辐射效应的探测器。     

一种新型γ辐射监测系统

本文介绍了一种多功能，宽量程的新型γ辐射监测系统，它由高压充气电离室，静电计型放大器，电压／电流变换器及ＳＴＤ监控系统组成，文中讨论了硬件和软件的设计方法。     

CsI(Tl)闪烁探测器读出电路设计

介绍了配置于新型γ能谱仪的CsI(Tl)闪烁探测器的读出电路设计。输入缓冲级采用折叠嵌位电路,改善了系统频率特性并提高了输入阻抗;放大级采用自举电路,改善了系统动态性能并提高了开环增益;输出级采用电流源负载电路,改善了输出信号的线性度并增强了系统的稳定性。实验表明:读出电路噪声为51.08 f C+1.97 f C/p F,时间漂移为0.112%,探头对137Cs源γ射线的输出信号信噪比可达23:1,能量分辨率可达4.98%。     

半导体探测器在秦山第二核电厂辐射监测系统上的应用

对在秦山第二核电厂辐射监测系统中使用的两种半导体探测器PIPS（Planar Implanted Passivated Silicon）和SIR的原理、结构、三种应用方式、使用情况进行了介绍和初步研究。     

Radiation Damage in Semiconductor Detectors

A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced.     

A Survey of Radiation Damage in Semiconductor Detectors

Examples of radiation damage in lithium-drifted detectors, lithium-drifted silicon detectors, and high-purity germanium detectors are discussed. The general patterns of damage, lithium-precipitation, annealing and recovery of detectors are outlined, and the observations are discussed.     

Linearity and Resolution of Semiconductor Radiation Detectors

The energy linearity for Si(Li) and Ge(Li) has been measured and compared with theory. Good agreement was obtained for x-ray attenuation factors ?md < 100 . The region of the germanium absorption edge was investigated and found to exhibit larger nonlinearities than predicted by the theory. The discrepancy is believed to be due to inefficient charge collection near the detector window leading to excessive fluctuations in the trapped charge. Calculations of the line broadening due to trapping have been shown to agree qualitatively with experimental values for the silicon detector. These calculations do not take into account any position dependent variation of the trapping factor, and must therefore be considered as the best attainable values. The disagreement between theory and experiment for the line broadening in Ge(Li) is particularly evident. The ? seems to be independent of energy in Si to less than 0.2% and in Ge to within at least 2% . Finally, the Fano factor in Si was found to be 0.154 +0.1 -0.2.     

Recent Results Obtained with High Field, Internally Amplifying Semiconductor Radiation Detectors

Characterization of the gallium diffused junctions found useful as amplifying radiation detectors indicate a rather surprising window-junction depth relationship. The window, at only the self bias of the junction, has been measured to be a micron or so although the junction depth is ~50 microns. This is a result of the unusual diffusion process used - diffusion to 75 microns with subsequent removal of the heavily acceptor doped, first 25 micron region. Because of potential for low energy detection of these structures (which require thin windows) stress is placed upon window measurements. Measurements made of the response of these structures as photon detectors in the near infrared (0.7 - 1.1 micron) wavelength region are reported. Also initial results which indicate that the x-ray cutoff for these structures lies in the 44-60 Angstrom range.     

带增益的气体探测器读出ASIC的研制

设计了用于带增益的气体探测器比如GEM、RPC等读出的ASIC,实现对探测器信号的放大、成形和对后续实时采样ADC的驱动电路.电荷增益和成形时间可调,有利于探测器不同增益下性能的研究,也扩展了芯片的应用范围.由于成形电路引入的噪声变得显著,在低电荷增益下,ENC会随增益下降而增加.芯片采用Chartered 0.35μm2P4M CMOS工艺,论文介绍了芯片的详细设计和仿真结果.     

Signal Processing for Semiconductor Detectors

This is a tutorial paper designed to provide a balanced perspective on the processing of signals produced by semiconductor detectors. The general problems of pulse shaping to optimize resolution with constraints imposed by noise, counting rate and rise time fluctuations are discussed.