1.3μm InGaAsP/InP大功率短脉冲SPB-BC激光器

本文在传统的掩埋新月型激光器的基础上，提出了一种１．３μｍＩｎＧａＡｓＰ／ＩｎＰ大功率激光器结构－选择性质子轰击掩埋新月型激光器（ＳＰＢ－ＢＣ）．文中对其制作过程及特性进行了详细的描述和测量．它的最低阈值电流小于１０ｍＡ，对于ｎ－ＩｎＰ衬底，它的最大输出功率为６５ｍＷ，ｐ－ＩｎＰ衬底，最大输出功率为８０ｍＷ．在重复频率为２．１ＧＨｚ时，测得光脉冲的半宽度（ＦＷＨＭ）为１８ｐｓ．     

由选择腐蚀和选择氧化法相结合研制的GaAs／AlGaAs垂直腔面发射激光器

本文报道了由选择氧化和选择腐蚀法相结合研制的ＧａＡｓ／ＡｌＧａＡｓ垂直腔面发射半导体激光器，ＤＢＲ中的ＡｌＡＳ经选择氧化后形成的氧化层作为有源区的横向电流限制层，器件的最低阈值电流为３．８ｍＡ，输出功率大于１ｍＷ，发散角小于７．８°，高频测量脉冲上升沿达１００ｐｓ，并制成了２×３列阵器件。     

分布反馈式半导体激光器耦合系数计算与垂向结构设计

本文推导出增益耦合型分布反馈式（ＤＦＢ）半导体激光器ＴＥ、ＴＭ模耦合系数Ｋ的计算公式．分析了ＤＦＢ激光器的横模，讨论了ｋ与ＤＦＢ激光器横模、光栅级数、占空比及吸收光栅层厚的关系．最后得出含吸收光栅的ＧａＡｌＡｓ／ＧａＡｓ增益耦合型ＤＦＢ激光器在采用三级光栅时的优化设计结果为：占空比０．１６，吸收层厚５０ｕｍ．     

1.3μm InGaAsP/InP大功率短脉冲SPB-BC激光器

本文在传统的掩埋新月型激光器的基础上，提出了一种１．３μｍＩｎＧａＡｓＰ／ＩｎＰ大功率激光器结构－选择性质子轰击掩埋新月型激光器（ＳＰＢ－ＢＣ）．文中对其制作过程及特性进行了详细的描述和测量．它的最低阈值电流小于１０ｍＡ，对于ｎ－ＩｎＰ衬底，它的最大输出功率为６５ｍＷ，ｐ－ＩｎＰ衬底，最大输出功率为８０ｍＷ．在重复频率为２．１ＧＨｚ时，测得光脉冲的半宽度（ＦＷＨＭ）为１８ｐｓ．     

具有金属反射膜的钨丝掩蔽两次质子轰击垂直腔面发射激光器

本文报道了一种工艺较简单的新结构垂直腔面发射激光器的设计与初步研制结果．所用的外延片是由分子束外延生长的，下镜面是由对Ａｌ０．１Ｇａ０．９Ａｓ／ＡｌＡｓ异质膜构成的分布布拉格反射器，上镜面是由对Ａｌ０．１Ｇａ０．９Ａｓ／ＡｌＡｓ异质膜构成的分布布拉格反射器及半反射半透明的金属膜组合构成．器件的电流注入区由钨丝掩蔽两次质子轰击形成．器件初步研制已实现了室温脉冲激射，阈值最低３２０ｍＡ，最大峰值功率可达９ｍＷ．     

P埋层技术研究

介绍了在Ｓｉ￣＋注入的ｎ－ＧａＡｓ沟道层下面用Ｂｅ￣＋或Ｍｇ￣＋注入以形成ｐ埋层。采用此方法做出了阈值电压０～０．２Ｖ，跨导大于１００ｍＳ／ｍｍ的Ｅ型ＧａＡｓＭＥＳＦＥＴ，也做出了夹断电压－０．４～－０．６Ｖ、跨导大于１００ｍＳ／ｍｍ的低阈值Ｄ型ＧａＡｓＭＥＳＦＥＴ。     

高速BiCMOS工艺研究

研究开发一种准２μｍ高速ＢｉＣＭＯＳ工艺，该工艺采用乍对准双埋双阱及外延结构。外延层厚度２．０－２．５μｍ，器件间采用多晶硅缓冲层局部氧化隔离，双极器件采用多晶硅发射极晶体管。利用此工艺试制出ＢｉＣＭＯＳ２５级环振，在负载电容ＣＬ＝０．８ｐＦ条件下，平均门延迟时间ｔｑｄ＝０．８４ｎｓ，功耗为０．３５ｍＷ／门，驱动能力 ０．６２ｎｓ／ｐＦ，明显ＣＭＯＳ门。     

InGaAs／GaAs应变层量子阱激光器深中心行为

应用深能级瞬态谱（ＤＬＴＳ）技术研究分子束外延（ＭＢＥ）和二次液相外延（ＬＰＥ）生长的ＩｎＧａＡｓ／ＧａＡｓ应变层量子季阱激光器深中心行为．在ＭＢＥ激光器的ｎ－ＡｌｘＧａ１－ｘＡｓ组分缓变层和限制层里，除众所周知的ＤＸ中心外，还观察到有较大俘获截面的深（空穴、电子）陷阱及其相互转化．这些陷阱可能分布在ｘ从０到０．４０和ｘ—０．４０的ｎ－ＡｌｘＧａ１－ｘＡｓ层里ｘ值不连续的界面附近．而在ＬＰＥ激光器的ｎ－ＡｌｘＧａ１－ｘＡｓ组分缓变层和限制层里，ＤＸ中心浓度明显减少，且深（空穴、电子）陷阱消失     

1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长

报道了用低压金属有机物化学气相淀积（ＬＰ－ＭＯＣＶＤ）方法外延生长ＩｎＧａＡｓＰ／ＩｎＰ应变补偿多量子阱结构。用此材料制备的掩埋异质结（ＢＨ）条形结构多量子阱激光器具有极低阈值电流４～６ｍＡ。２０～４０℃时特征温度Ｔ０高达６７Ｋ，室温下外量子效率为０．３ｍＷ／ｍＡ。     

高速BiCMOS工艺研究

研究开发了一种准２μｍ高速ＢｉＣＭＯＳ工艺，采用自对准双埋双阱及外延结构．外延层厚度为２．０～２．５μｍ，器件间采用多晶硅缓冲层局部氧化（简称ＰＢＬＯＣＯＳ）隔离，双极器件采用多晶硅发射极（简称ＰＳＥ）晶体管．利用此工艺已试制出ＢｉＣＭＯＳ２５级环振电路，在负载电容ＣＬ＝０．８ｐＦ条件下，平均门延迟时间ｔｐｄ＝０．８４ｎｓ，功耗为０．３５ｍＷ／门，驱动能力为０．６２ｎｓ／ｐＦ．明显优于ＣＭＯＳ门．     

Vertical-cavity surface-emitting lasers integrated onto siliconsubstrates by PdGe contacts

Vertical-cavity surface-emitting lasers (VCSELs) have been integrated onto an aluminium coated silicon substrate. The InGaAs top-emitting VCSELs were grown by molecular beam epitaxy and individual lasers were defined by high energy proton implantation. The substrate was removed by a new substrate removal process and the lasers were bonded to an aluminised silicon substrate using a Pd/Ge/InSn contact. Threshold currents below 5.5 mA and output powers of ~1 mW were obtained for 40 μm VCSELs bonded to Si     

Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers

Deep-red (770-nm) top-surface-emitting vertical-cavity AlGaAs lasers were fabricated and operated continuously at room temperature. An Al/sub 0.14/Ga/sub 0.86/As superlattice was used for an active-gain medium. Efficient current funneling was achieved by deep proton implantation. Continuous-wave (CW) threshold currents were 4.6 and 6.3 mA at 3.9- and 3.4-V bias for 10- and 15- mu m-diameter lasers, respectively. The maximum CW output power was >1.1 mW at room temperature without heat sink. Arrays of various top-surface-emitting lasers based on current funneling are expected to generate many applications for photonic switching, chip-to-chip communication, optical computing, and printing.<>     

GaInAsP lateral current injection lasers on semi-insulatingsubstrates

GaInAsP lateral current injection lasers have been fabricated on semi-insulating InP substrates. The lasers exhibit good lasing characteristics such as 10 mA threshold current, 10 mW maximum cw output power, and cw oscillation up to 70°C. The laser has very low capacitance of 0.5 pF at zero bias voltage. This performance shows, for the first time, that the lateral current injection laser is a promising candidate for OEIC light sources     

High temperature, high power InGaAs/GaAs quantum-well lasers withlattice-matched InGaP cladding layers

The authors report the high-temperature and high-power operation of strained-layer InGaAs/GaAs quantum well lasers with lattice-matched InGaP cladding layers grown by gas-source molecular beam epitaxy. Self-aligned ridge waveguide lasers of 3-μm width were fabricated. These lasers have low threshold currents (7 mA for 250-μm-long cavity and 12 mA for 500-μm-long cavity), high external quantum efficiencies (0.9 mW/mA), and high peak powers (160 mW for 3-μm-wide lasers and 285 mW for 5-μm-wide laser) at room temperature under continuous wave (CW) conditions. The CW operating temperature of 185°C is the highest ever reported for InGaAs/GaAs/InGaP quantum well lasers, and is comparable to the best result (200°C) reported for InGaAs/GaAs/AlGaAs lasers     

空间生长GaAs单晶做衬底的GaAs/AlGaAs DH激光器

我们首次用在中国返地卫星上生长的Si-GaAs单晶做衬底,成功地研制出室温CW工作的GaAs/AlGaAs质子轰击条形DH激光器,DH外延片是用LPE法生长的。激光器的最低阈电流20mA,激射波长857nm,输出功率可达30mW。     

InGaAs/GaAs 0.98 μm semi-insulating blocked planar buriedheterostructure lasers employing InGaAsP cladding layers

MOVPE-grown InGaAs/GaAs strained-layered lasers emitting at 0.98 μm have been fabricated using InGaAsP as an alternative to AlGaAs in the cladding layers. Semi-insulating blocked planar buried heterostructure lasers 2.5 μm wide have thresholds as low as 8 mA for 350 μm long devices. With the addition of reflective coatings, slope efficiencies of 0.67 mW/mA and output powers of 60 mW at 160 mA have been obtained     

High-power room temperature emission quantum cascade lasers at /spl lambda/=9 /spl mu/m

We present two different techniques for processing InP-based /spl lambda/=9 /spl mu/m quantum cascade lasers which improve the thermal dissipation in the device. The first process is based on hydrogen implantation creating an insulating layer to inject current selectively in one part of the active region. The second process uses a thick electroplated gold layer on the laser ridge to efficiently remove the heat produced in the active region. Each process is designed to improve heat evacuation leading to higher performances of the lasers and will be compared to a standard ridge structure from the same wafer. We give evidence that the process of proton implantation, efficient in GaAs based structures, is not directly applicable to InP based devices and we present a detailed analysis of the thermal properties of devices with an electroplated gold thick layer. With these lasers, an average power of 174 mW at a duty cycle of 40% has been measured at 10/spl deg/C.     

High-speed InGaAsP/InP multiple-quantum-well laser

The authors describe practical high-speed InGaAsP/InP lasers based on compressively strained quantum wells. Buried heterostructure lasers with threshold currents of 10 mA and slope efficiencies of 0.23 mW/mA are used. A modulation bandwidth of 20 GHz is obtained at a low drive current of 90 mA. A K factor of 0.25 ns is obtained and the intrinsic bandwidth of these lasers is estimated at 35 GHz     

Performance characteristics of buried facet quarter-wave shifted distributed feedback lasers

The performance characteristics of quarter-wave shifted GaInAsP distributed feedback lasers emitting near 1.3 mu m are described. The quarter-wave shifted grating is fabricated on a substrate using the double-exposure holographic technique. The low reflectivity required for this quarter-wave shifted DFB laser is obtained using buried facets at both ends of the laser. The lasers have threshold current of 30 mA, quantum efficiency of 0.18 mW/mA/facet, bandwidth of 11.5 GHz at 10 mW and 10 dB chirp width of 2.5 AA under 40 mA modulation current at 5 Gbit/s.<>     

MOVPE studies for the development of GaInAsP/InP lasers with semi-insulating InP blocking layers

The self-aligned selective regrowth of a GalnAsP/lnP BH laser with semi-insulating InP:Fe by atmospheric-pressure MOVPE is reported. A threshold current of 26 mA and 12mW output power at 100mA are obtained. Very low capacitance values of 3?5 pF are measured, promising excellent high-frequency performance.