温度对电沉积的SnS薄膜的结构和性能的影响

在溶液的pH=2.7,离子浓度比Sn2 /S2O32-=1/5,沉积电位为-0.72～-0.75V(vs.SCE)的条件下,控制溶液的温度在30～50℃之间变化,用阴极恒电位电沉积法在ITO导电玻璃基片上沉积SnS薄膜.通过对薄膜的结构和光学性能研究,结果表明:溶液的温度越高,制备出的SnS薄膜更加致密,均匀,薄膜的衍射峰也越来越明显;同时SnS薄膜对光的吸收范围也向长波方向拓宽.     

脉冲电沉积法制备SnS薄膜及其光电性质研究

在ITO玻璃衬底上使用脉冲电沉积法制备了SnS薄膜,研究了不同的开启脉冲电位对薄膜表面,薄膜结构以及光学性质的影响。结果表明,在不同开启脉冲电位下制备出来的SnS薄膜的禁带宽度可以在1.3~1.62 eV范围内变化,并且随着开启脉冲电位的增大,薄膜的禁带宽度逐渐变大。在开启脉冲电位为-0.70V(vs.SCE)时,制备的薄膜禁带宽度为1.53 eV,在可见光范围内光吸收系数均达到104cm-1以上。扫描电子显微镜的测试结果表明所得薄膜的表面平整并且均匀。结合X射线衍射结果可证实制备出的薄膜是由正交结构晶粒组成的多晶体。对薄膜进行变温电学性质的测试,得到了薄膜电导率温度谱,发现室温下薄膜的电导率为10-6S.cm-1。同时,在实验上发现了薄膜与Al电极形成了肖特基接触,由电学测试推导出肖特基势垒高度为0.58 eV。     

氧化锌薄膜的阴极恒电流沉积和表征

以铜片为阴极,采用恒电流法从硝酸锌溶液中电沉积出氧化锌薄膜.分别讨论了溶液浓度和温度对薄膜结构和组成的影响,结果表明,在低浓度和低温时将有金属锌析出.通过电化学交流阻抗对薄膜的结构进行了表征,分析表明氧化锌薄膜具有一种外层粗糙、内层致密的双层结构.     

脉冲激光沉积制备SnS薄膜及其光学特性的研究

利用脉冲激光沉积法在玻璃衬底上制备SnS薄膜,研究了SnS薄膜的晶体结构、表面形貌以及有关光学特性。所制备的SnS薄膜样品为斜方晶系多晶结构,在(111)晶面上有很强的择优取向性;衬底温度在100~400℃范围内,表面形貌有所区别,随着温度升高,薄膜表面分别呈现大小晶粒共存、片状颗粒、针状颗粒和锥状颗粒的形貌特征;紫外区的SnS薄膜透过率极低,可见光范围的透过率很低,近红外区的透过率较大;样品在可见区和紫外区吸收强烈,吸收系数达105cm-1量级,直接禁带宽度为1.39~1.46 eV。     

两步法制备SnS光电薄膜及其性能

用两步法在ITO玻璃基片上制备SnS薄膜,即先在ITO玻璃基片上热蒸发一层Sn膜,然后在一定的温度和时间下在真空系统中进行硫化.在优化工艺条件下制备出附着力好的薄膜,通过扫描电子显微镜、X射线衍射、分光光度计等手段观察和分析测试,表明该薄膜是正交结构的SnS,薄膜表面致密,颗粒大小均匀.根据薄膜的反射光谱和透射光谱,计算得到其在吸收边的吸收系数α>5×104cm-1,直接带隙Eg=1.48eV,适合于作为太阳能电池的吸收层材料.     

电沉积法制备ZrO_2薄膜的工艺研究

研究了水溶液中电沉积ZrO2薄膜的工艺,系统分析了镀液成分、pH值、电流密度及沉积时间对电沉积ZrO2薄膜的影响规律,并分析了薄膜的厚度、成分和形貌等。研究结果表明,在硝酸锆水溶液中加入一定量的络合剂和添加剂,可以得到与基体结合好、分布均匀的ZrO2薄膜。     

阴极恒电流法制备SmS光学薄膜

以SmCl3·6H2O和Na2S2O3·5H2O为原料,采用电沉积法在单晶硅(100)和玻璃基板制备了SmS光学薄膜.采用XRD、AFM和紫外可见光分光光度计对薄膜进行了表征.研究了[Sm3 ]/[S2O32-]、溶液的pH值对于薄膜的物相的影响.结果表明:在[Sm3 ]/[S2O32-]=1:2,控制溶液pH值为4.50以及沉积1h的条件下,可制备出70nm厚单一晶相且表面比较平整的SmS薄膜,薄膜具有(331)方向的取向性.紫外光谱测试表明所制备的SmS薄膜具有290～300nm的紫外吸收特性,薄膜的禁带宽度约为3.6eV.     

热蒸发法制备SnS薄膜及其表征

用热蒸发技术在ITO玻璃基片上沉积SnS薄膜.通过对该薄膜进行结构、成分和表面形貌分析,表明它是具有正交结构的SnS多晶薄膜;相对于恒电流电沉积法制备的SnS薄膜来说,该薄膜颗粒更细,粒径在(60～100) nm,并且它的均匀性和对基片的附着力也更好.通过测量薄膜样品的反射和透射光谱,得到其直接禁带宽度Eg=1.34 eV,在基本吸收边附近的吸收系数大于2×104 cm-1.该薄膜的导电类型为p型,电阻率的数量级为10-2 Ω·cm.因此,用热蒸发技术制备出的SnS薄膜的质量和性能都比较理想,该薄膜非常适合做太阳能电池的吸收层.     

阴极电沉积法同时制备TiO2薄膜和颗粒

采用阴极电沉积法电解钛酸四丁酯同时制备TiO2膜和颗粒,并讨论沉积条件对产物的影响。pH值是控制产物的主要参数。对比在紫外灯光照下不同产物不同时间下的光催化性能,比较其差异得出,酸性在pH值为1-2(加浓硫酸2-3mL)时的产物效果最好,光催化性能最好。并横向比较了加入硫酸体积相等的条件下,颗粒和薄膜的光催化效率。     

透明致密ZnO薄膜的恒电流沉积及生长过程研究

采用阴极恒电流沉积方法, 以Zn(NO ₃)₂水溶液为电沉积液, 在经电化学预处理后的ITO导电玻璃上生长了具有c轴高度择优取向、均匀致密的透明ZnO薄膜. 采用X射线衍射、扫描电镜和光学透过谱等技术, 对不同沉积时间条件下薄膜的结晶特性、表面和断面结构、光学性质等进行了研究. 结果表明, 沉积时间对ZnO薄膜质量影响明显: 在薄膜生长后期(120min), ZnO薄膜的结晶性和表面平整度明显降低, 晶粒尺寸增大, 可见光透过率下降, 表明高质量ZnO薄膜的电化学沉积有一最佳生长时间; 此外, 薄膜厚度随时间呈线性变化, 表明可通过生长时间实现对ZnO薄膜厚度的精确控制.     

电流密度对Sm-Fe电沉积膜显微组织及性能的影响

在室温下的水溶液体系中,采用恒流电沉积技术在Cu基体上制备了Sm-Fe合金薄膜。研究了电流密度对沉积膜层的表面形貌、厚度、元素含量以及物相组成的影响,并测试了制备出的Sm-Fe合金膜的磁性能。结果表明,银灰色的沉积膜由金属Sm、Fe及少量的O组成;随着电流密度的增加,膜层中Sm含量呈现先上升后下降的趋势;而Sm含量越多,膜层的表面越平整光亮;沉积膜主要由Sm Fe12、Sm3Fe5O12等化合物组成,电流密度影响了膜层中物相组成的含量,进而影响了膜层的磁性能。     

One-step growth of thin film SnS with large grains using MOCVD

Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin–doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with potential use of its transparency for bifacial illumination. Tetraethyltin and ditertiarybutylsulphide were used as precursors with process temperatures 430–470 °C to promote film growth with large grains. The film stoichiometry was controlled by varying the precursor partial pressure ratios and characterised with energy dispersive X-ray spectroscopy to optimise the SnS composition. X-ray diffraction and Raman spectroscopy were used to determine the phases that were present in the film and revealed that small amounts of ottemannite Sn₂S₃ was present when SnS was deposited on to the ITO using optimised growth parameters. Interaction at the SnS/ITO interface to form Sn₂S₃ was deduced to have resulted for all growth conditions.     

均匀沉淀法制备SnS纳米粉体

以SnCl2·2H2O和TAA为反应源物，采用均匀沉淀法在酸性水溶液中制备SnS纳米粉体。用XRD、EDS、SEM分析手段对样品进行了表征。XRD分析结果表明样品为斜方晶体结构的多晶SnS粉体，EDS分析表明粉体中的s和sn原子非常接近化学计量比1：1，SEM测试结果显示粉体粒径在30-100nm范围内。此外，还简要分析了热处理对粉体结构性能的影响。     

Synthesis of tin oxide nanoparticle film by cathodic electrodeposition

Three-dimensional SnO2 nanoparticle films were deposited onto a copper substrate by cathodic electrodeposition in a nitric acid solution. A new formation mechanism for SnO2 films is proposed based on the oxidation of Sn2+ ion to Sn4+ ion by NO+ ion and the hydrolysis of Sn4+. The particle size of SnO2 was controlled by deposition potential. The SnO2 showed excellent charge capacity (729 mAh/g) at a 0.2 C rate and high rate capability (460 mAh/g) at a 5 C rate.     

n型SnS热电材料的制备与性能研究

SnS由低毒、廉价、高丰度的元素组成, 在热电研究领域受到广泛关注。采用机械合金化(MA)结合放电等离子烧结(SPS)工艺制备了n型SnS_1-xCl_x(x=0, 0.02, 0.03, 0.04, 0.05, 0.06)多晶块体热电样品, 并研究了Cl^-掺杂量对SnS物相、微观结构以及电热输运性能的影响。结果表明: Cl^-的引入会提高电子浓度, 使SnS由本征p型转变为n型半导体。随着Cl^-掺杂量的增加, n型SnS半导体室温下的霍尔载流子浓度从6.31×10¹⁴ cm^-3 (x=0.03)增加到7.27×10¹⁵cm^-3 (x=0.06)。x=0.05样品在823 K取得最大的电导率为408 S·m^-1, 同时具有较高的泽贝克系数为-553 μV•K^-1, 使其获得最大功率因子为1.2 μW·cm^-1·K^-2。Cl^-的掺入会引入点缺陷, 散射声子, 使晶格热导率κ_lat由0.67 W·m^-1·K^-1(x=0)降至0.5 W·m^-1·K^-1 (x=0.02)。x=0.04样品在823 K获得了最大ZT为0.17, 相比于x=0样品(ZT~0.1)提高了70%。     

Synthesis and characterization of yttrium aluminum garnet nanostructures by cathodic electrodeposition method

Pure nanostructures of yttrium aluminum garnet (YAG) was prepared based on the cathodic electrodeposition method from the mixture of YCl₃ and AlCl₃ dissolved in water/ethanol solution. At first, hydroxide precursors cathodically were grown on the steel substrates then, the hydroxide powders heat treated at 850 °C for 4 h in dry air atmosphere. The formation of crystalline YAG nanopowder was confirmed by X-ray diffraction (XRD), thermogravimetric analysis (DSC-TGA), scanning electron microscopy (SEM) and Fourier transformed infrared spectroscopy (FT-IR). The results of the SEM showed that applied current density and bath temperature have the prominent effect on the morphology and particle size of the products. The results revealed that cathodic electrodeposition followed by heat-treatment can be used as a facile method for preparation of YAG nanostructures with different morphology.     

Comprehensive studies on the stabilities of a-In-Ga-Zn-O based thin film transistor by constant current stress

Stability under constant current stress, along with hysteresis characteristics, was studied for a-In-Ga-Zn-O thin-film transistors (TFTs) in several atmospheres and at several temperatures. Unannealed TFTs showed rather large instability; i.e., large hysteresis in transfer curves (ΔV_G > 0.8 V) and large positive threshold voltage shift (ΔV_th > 10 V for 50 h tests at 5 µA) with deterioration of subthreshold voltage swing was observed. The instability for the unannealed TFT had a strong dependence on the stress atmosphere and the stress temperature, which suggests that trap states generated by the stress test is related to oxygen vacancy formed by breaking weak chemical bonds. Wet annealing improved stability; the hysteresis disappeared and the ΔV_th was reduced to < 2 V. The improvement is considered to be related to the reduction of weak chemical bonds by wet annealing with the strong oxidation power of water molecules.