射频磁控反应溅射制备Al2O3薄膜的工艺研究

采用射频磁控反应溅射法,以高纯Al为靶材,高纯O2为反应气体,在不锈钢和单晶Si基片上成功地制备了氧化铝(Al2O3)薄膜,并对氧化铝薄膜的沉积速率、结构和表面形貌进行了研究.结果表明,沉积速率随着射频功率的增大先几乎呈线性增大而后缓慢增大;随着溅射气压的增加,沉积速率先增大,在一定气压时达到峰值后继续随气压增大而减小,同时随着靶基距的增大而减小;随着氧气流量的不断增加,靶面溅射的物质从金属态过渡到氧化物态,沉积速率也随之不断降低.X射线衍射图谱表明薄膜结构为非晶态;用原子力显微镜对薄膜表面形貌观察,薄膜微结构为柱状.     

RF磁控溅射制备Al_2O_3薄膜及其介电性能研究

以-αAl2O3为靶材,采用射频磁控溅射法制备了非晶Al2O3薄膜。利用X射线衍射仪、扫描电镜、划痕仪、表面粗糙轮廓仪和阻抗仪研究了不同溅射功率和不同溅射气压对薄膜制备的影响,探索了不同溅射功率下制备的Al2O3薄膜的介电常数和介电损耗与频率的关系。试验结果表明,制备的非晶Al2O3薄膜表面平滑致密;随着工作气压的增加,薄膜沉积速率增加;随着溅射功率的增加,Al2O3薄膜的沉积速率和介电常数逐渐增加、介电损耗逐渐减小;随着频率的增加,Al2O3薄膜的介电常数逐渐减小,高频阶段趋于稳定。     

直流溅射工艺参数对Mo薄膜结构及电性能的影响

采用直流磁控溅射法在SLG衬底上沉积Mo薄膜,对不同溅射功率和溅射工作气压下沉积的薄膜进行X射线衍射、SEM(扫描电子显微镜)、电阻率测试,讨论了工艺参数对沉积Mo薄膜相结构、表面微观形貌、薄膜沉积速率和电学性能的影响。结果表明,随着溅射功率的增加,薄膜的结晶性能变好,沉积速率提高,在沉积功率范围内薄膜均匀致密,表面无空隙,电阻率较低;随着溅射工作气压增加,薄膜结晶性能变差,沉积速率先增加后降低,在沉积工作气压范围内,薄膜致密;随气压降低,电阻率急剧减小。因此,较高的溅射功率和较低的工作气压沉积的Mo薄膜更适合作CIGS薄膜太阳电池的BC层(背接触层)。     

铝/改性氟塑料复合薄膜的制备

采用射频磁控溅射技术在改性氟塑料表面沉积铝层,制备了金属/氟化高聚物复合薄膜.利用场发射扫描电镜(FESEM)及能量散射谱(EDS)分析仪对沉积的铝层进行了表面形貌的表征和化学组分的分析.初步探讨了溅射功率、气压和时间等不同溅射参数对铝层结构和铝层在氟塑料表面附着情况的影响.结果表明:溅射功率是决定复合薄膜质量的重要因素,功率过低得不到致密的铝层结构,而且铝层容易从氟塑料表面脱离,功率过高则会产生很强的热效应而使复合薄膜弯曲.溅射气压和时间分别影响铝层在氟塑料表面的沉积速率和生长厚度.     

射频磁控溅射对PET基材制备铝薄膜的性能影响

针对传统制铝技术,为提高膜层结合力、阻隔性,采用射频磁控溅射镀铝工艺,制备纯铝高阻隔性膜层,在PET塑料薄膜表面沉积纯铝的实验.通过对射频电源功率和溅射气压等参数的改变,探究射频功率、溅射气压对薄膜结合力、阻隔性的影响.结果表明:薄膜沉积过程中的射频功率和溅射气压对磁控镀铝薄膜性能影响较大,在一定的溅射压力下,膜层的结...     

磁控溅射参数对Al薄膜微观结构及红外特性的影响研究

利用磁控溅射法在Si(100)基片上制备了Al薄膜,采用X射线衍射、扫描电镜、扫描探针显微镜和红外光谱仪研究了基片温度、溅射功率和溅射时间对Al薄膜表面、断面形貌和红外反射率的影响。结果表明:随着基片温度的升高,Al颗粒的尺寸变大,由均匀细颗粒变为不规则形状,并逐渐熔为一个整体,断面形貌变得凹凸不平,表面粗糙度增大,红外反射率呈下降的趋势;随着溅射功率的增大,Al薄膜致密平整,表面粗糙度增大,红外反射率先增大后不变;随着溅射时间的延长,Al薄膜表面粗糙度增大,红外反射率先增大后不变。     

溅射气压对直流磁控溅射ZnO:Al薄膜的影响(英文)

采用直流磁控溅射法在玻璃基片上沉积ZnO:Al(AZO)薄膜,溅射气压为0.2～2.2 Pa.通过X射线衍射(XRD)、扫描电子显微镜(SEM)、四探针和紫外–可见分光光度计对AZO薄膜的相结构、微观形貌和电光学性质进行了表征.结果表明:薄膜的沉积速率随着溅射气压的增大而减小,变化曲线符合Keller-Simmons模型;薄膜均为六角纤锌矿结构,但择优取向随着溅射气压发生改变;溅射气压对薄膜的表面形貌有显著影响;当溅射气压为1.4 Pa时,薄膜有最低的电阻率(8.4×104 Ω·cm),高的透过率和最高的品质因子Q.     

CoTaZr薄膜的制备及结构研究

室温下采用直流磁控溅射法在玻璃基片上沉积CoTaZr薄膜。利用EDS、SEM、XRD等方法研究溅射气压、功率对CoTaZr薄膜成分、生长形貌和组织结构的影响。结果表明,溅射功率为96W时,沉积制备的薄膜成分随Ar气压变化不大,薄膜成分基本稳定。在溅射气压为2Pa、功率为96W时,成功制备出具有非晶+纳米晶结构的CoTaZr薄膜。在2Pa时,随着功率的增大,薄膜由1区、T区向3区转变;在96W时,随着气压的增大,薄膜由3区向T区或1区转变。     

RF磁控溅射工艺对TiNi(1-x)Cux合金薄膜组织形貌的影响

采用RF磁控溅射技术制备了TiNi(1-x)Cux合金薄膜，利用扫描电镜，电子能谱仪和XRD技术分析研究了RF磁控溅射工艺对TiNi(1-x)Cux合金薄膜组织形貌的影响规律。结果表明：在基片不加热的条件下溅射薄膜组织结构为非晶，并呈柱状形貌垂直于基片生长；经650-720℃，3min退火处理后，薄膜均发生晶化转变；在他它条件相同的情况下，溅射功率和工作气压对薄膜组织形貌有很大影响；薄膜的柱状单胞直径，薄膜厚度和生长速度均随溅射功率的增长而增长，但当溅射功率一定时，工作气压增加使柱状单胞直径，薄膜厚度和薄膜的生长速率显著减小，RF磁控溅射过程中，沉积原子的活性及其沉积速率是影响薄膜组织形貌的主要原因。     

不同溅射功率下PEN/Ti纳米复合薄膜的制备及性能研究

采用直流磁控溅射法,在溅射气压为7.0×10~(-1) Pa和不同溅射功率(72～144W)下,制备出PEN/Ti纳米复合薄膜。研究了不同溅射功率对Ti膜微观组织、表面粗糙度、硬度及生长方式的影响规律。结果表明,直流磁控溅射法在PEN柔性衬底上沉积的钛膜是一种纳米多晶薄膜;随着溅射功率的增加,钛膜沉积速率及钛膜弹性模量皆升高,而钛膜表面粗糙度与钛膜晶粒尺寸均减小;溅射功率的增加将抑制钛膜柱状生长方式。在溅射气压为7.0×10~(-1) Pa,溅射功率为144 W时的工艺参数下,获得性能最佳的复合薄膜。     

直流反应磁控溅射在3003铝箔表面制备薄膜的研究

为有效提高3003铝箔表面光泽度、比面积及强硬度,采用直流反应磁控溅射的方法.在一定溅射参数条件下,选用高纯钼靶和钛靶对3003铝箔进行溅射实验,分别在铝箔表面主要沉积出AlMo3、Al3Mo薄膜和TiAl、(Ti,Al)N薄膜,利用X射线衍射、扫描电镜分析相组成及微观组织结构,并测试了显微硬度和薄膜厚度,实验结果表明:制备出的AlMo3、Al3Mo薄膜和TiAl薄膜结晶良好,与基底结合良好,铝箔表面美观漂亮、硬度增高及比表面积得到一定提高.     

磁控溅射Ni-Mn-Ga磁驱动记忆薄膜的组织结构与成分研究

利用射频磁控溅射技术成功地在Si衬底上沉积Ni Mn Ga 薄膜,并采用XRD、SEM、AFM 及EMPA系统研究Ni Mn Ga薄膜的晶体学结构、断面形貌、表面形貌、成分及其影响规律。结果表明,经823K退火1h Ni Mn Ga薄膜完全晶化,室温下呈L21型体心立方结构;断面形貌揭示Ni Mn Ga 薄膜呈柱状结构。Ni Mn Ga薄膜的表面粗糙度随溅射功率和溅射时间的增加而增大;Ni Mn Ga薄膜中Ga的含量受溅射功率影响较大, Ni 的含量受溅射时间影响较大。     

直流反应溅射沉积Al2O3薄膜及其在SS-AlN金属陶瓷太阳吸收涂层的应用

在沉积不锈钢-氮化铝(SS-AlN)金属陶瓷太阳吸收集热管的磁控溅射三靶镀膜机上,安装了UPS03反应溅射闭环控制单元,实现反应溅射Al2O3稳定反馈控制。采用国产直流电源在Al靶表面处于过渡态下,成功制备了吸收几乎为零的Al2O3薄膜。溅射功率在14kW时,反应溅射沉积Al2O3的靶电压波动可长时间稳定控制在±3 V范围内,沉积速率为5.4 nm/(min·kW),约为Al靶在无反应气体溅射下沉积Al薄膜速率的74%。采用Al2O3代替AlN作为减反射层,应用到SS-AlN太阳选择性吸收涂层中,进一步提高了复合膜的太阳光学性能,太阳吸收比由AlN作为减反射层的0.956提高到0.965,红外发射比不变,仍为0.044。     

CoFe合金薄膜的制备及原子力表征

室温下采用射频磁控溅射技术在涤纶纺粘非织造布表面沉积钴铁(CoFe)合金薄膜.通过原子力显微镜(AFM)观察了CoFe合金薄膜在无纺织布表面沉积的微观结构,并较为系统地分析了溅射时间、溅射压强及溅射功率对CoFe合金薄膜微观结构的影响.结果表明,磁控溅射的工艺参数配置对CoFe合金薄膜表面形貌的影响很大,溅射时间的长短、溅射功率的大小对成膜的均匀性有很大影响,在一定的溅射压强(0.5Pa)时合金颗粒将会因团聚而急速增大.     

Deposition process,microstructure and mechanical behaviours of RF magnetron sputtered (Ti,Al)N thin films

Abstract

Thin films of (Ti,Al)N with different Al contents were co-deposited using one Ti and one Al targets by radio frequency (RF) pulsed magnetron sputtering. Their composition, microstructure, nanohardness, surface morphology and deposition process were investigated by energy dispersive spectrometer system, X-ray diffraction, nanoindentation, atomic force microscopy and optical emission spectrum. A face cubic centred (fcc) TiN (B1) structure was found in the thin films when Al target power was low. When Al target power was increased, an additional hexagonal AlN (B4) structure appeared. With increasing Al content, the resulting films gradually changed from B1 structure to that of B4, accompanying with decrease of the lattice constant of B1 structure. Simultaneously, the preferred orientation of B4 structural thin films gradually transformed from (111) to (200). The mode of thin films transformed from island to fibre, subsequently to column with increasing Al target power. Optical emission spectrum analysis indicated that Al target surface reached non-metal sputtering mode earlier than that of Ti target under the same deposition parameters, which resulted in a lower sputtering rate of Al target than Ti target and loss of Al content in (Ti,Al)N thin films.     

Process for deposition of AlF3 thin films

We fabricated aluminum fluoride (AlF(3)) thin films by pulsed DC magnetron sputtering with various CF(4) flow rates and sputtering powers. Our method is distinct from the conventional deposition process in that we used inexpensive Al (99.99% purity) as the target instead of an expensive fluoride compound. The optical properties and microstructure of the thin films were examined. The optical quality of AlF(3) thin films deposited at a 20 W sputtering power and injected 110 SCCM (SCCM denotes cubic centimeters per minute at standard temperature and pressure) CF(4) flow at room temperature showed improvement with an extinction coefficient of less than 7 x 10(-4) at 193 nm. The deposition of AlF(3) thin films at different substrate temperatures and annealed by UV light was also investigated.     

Deposition and heat treatment of CuAlNi shape memory thin films

CuAlNi thin films were fabricated by magnetron sputtering process. After heat treatment, the thin films presented a shape memory effect. Calowear method was used to measure the thickness of the thin films. SEM, XRD and TEM were used to characterize the thin films. The phase transformation in the thin films was examined by DSC. The deposition rate increased with increasing sputtering power and decreased with increasing Ar pressure. Compared to the composition of the target, both the content of Al and the content of Ni increased a little. The sputtering conditions had little influence on the content of Ni. The content of Al varied slightly with sputtering power, while decreased with increasing Ar pressure. The deposited thin films were columnar. The grain size was very fine. The phases were α‐Cu and α₂. After heat treatment at 800 ^oC/ 60 min + 300 ^oC/ 60 min in vacuum, CuAlNi shape memory thin films were obtained. The phase in the heat‐treated thin films was β₁’ martensite. Martensite transformation was observed and a two‐way shape memory effect could be shown.     

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Aluminum nitride (AlN) piezoelectric thin films with c-axis crystal orientation on polymer substrates can potentially be used for development of flexible electronics and lab-on-chip systems. In this study, we investigated the effects of deposition parameters on the crystal structure of AlN thin films on polymer substrates deposited by reactive direct-current magnetron sputtering. The results show that low sputtering pressure as well as optimized N₂/Ar flow ratio and sputtering power is beneficial for AlN (002) orientation and can produce a highly (002) oriented columnar structure on polymer substrates. High sputtering power and low N₂/Ar flow ratio increase the deposition rate. In addition, the thickness of Al underlayer also has a strong influence on the film crystallography. The optimal deposition parameters in our experiments are: deposition pressure 0.38 Pa, N₂/Ar flow ratio 2:3, sputtering power 414 W, and thickness of Al underlayer less than 100 nm.