Continuous Control of Charge Transport in Bi‐Deficient BiFeO3 Films Through Local Ferroelectric Switching

It is demonstrated that electric transport in Bi‐deficient Bi_1‐δFeO₃ ferroelectric thin films, which act as a p‐type semiconductor, can be continuously and reversibly controlled by manipulating ferroelectric domains. Ferroelectric domain configuration is modified by applying a weak voltage stress to Pt/Bi_1‐δFeO₃/SrRuO₃ thin‐film capacitors. This results in diode behavior in macroscopic charge‐transport properties as well as shrinkage of polarization‐voltage hysteresis loops. The forward current density depends on the voltage stress time controlling the domain configuration in the Bi_1‐δFeO₃ film. Piezoresponse force microscopy shows that the density of head‐to‐head/tail‐to‐tail unpenetrating local domains created by the voltage stress is directly related to the continuous modification of the charge transport and the diode effect. The control of charge transport is discussed in conjunction with polarization‐dependent interfacial barriers and charge trapping at the non‐neutral domain walls of unpenetrating tail‐to‐tail domains. Because domain walls in Bi_1‐δFeO₃ act as local conducting paths for charge transport, the domain‐wall‐mediated charge transport can be extended to ferroelectric resistive nonvolatile memories and nanochannel field‐effect transistors with high performances conceptually.     

Ultrahigh Energy‐Storage Density in NaNbO3‐Based Lead‐Free Relaxor Antiferroelectric Ceramics with Nanoscale Domains

Dielectric energy‐storage capacitors have received increasing attention in recent years due to the advantages of high voltage, high power density, and fast charge/discharge rates. Here, a new environment‐friendly 0.76NaNbO₃–0.24(Bi_0.5Na_0.5)TiO₃ relaxor antiferroelectric (AFE) bulk ceramic is studied, where local orthorhombic Pnma symmetry (R phase) and nanodomains are observed based on high‐resolution transmission electron microscopy, selected area electron diffraction, and in/ex situ synchrotron X‐ray diffraction. The orthorhombic AFE R phase and relaxor characteristics synergistically contribute to the record‐high energy‐storage density W_rec of ≈12.2 J cm^?3 and acceptable energy efficiency η ≈ 69% at 68 kV mm^?1, showing great advantages over currently reported bulk dielectric ceramics. In comparison with normal AFEs, the existence of large random fields in the relaxor AFE matrix and intrinsically high breakdown strength of NaNbO₃‐based compositions are thought to be responsible for the observed energy‐storage performances. Together with the good thermal stability of W_rec (>7.4 J cm^?3) and η (>73%) values at 45 kV mm^?1 up to temperature of 200 °C, it is demonstrated that NaNbO₃‐based relaxor AFE ceramics will be potential lead‐free dielectric materials for next‐generation pulsed power capacitor applications.     

Self‐Assembled Room Temperature Multiferroic BiFeO3‐LiFe5O8 Nanocomposites

Multiferroic materials have driven significant research interest due to their promising technological potential. Developing new room‐temperature multiferroics and understanding their fundamental properties are important to reveal unanticipated physical phenomena and potential applications. Here, a new room temperature multiferroic nanocomposite comprised of an ordered ferrimagnetic spinel α‐LiFe₅O₈ (LFO) and a ferroelectric perovskite BiFeO₃ (BFO) is presented. It is observed that lithium (Li)‐doping in BFO favors the formation of LFO spinel as a secondary phase during the synthesis of Li_xBi_1?xFeO₃ ceramics. Multimodal functional and chemical imaging methods are used to map the relationship between doping‐induced phase separation and local ferroic properties in both the BFO‐LFO composite ceramics and self‐assembled nanocomposite thin films. The energetics of phase separation in Li doped BFO and the formation of BFO‐LFO composites are supported by first principles calculations. These findings shed light on Li's role in the formation of a functionally important room temperature multiferroic and open a new approach in the synthesis of light element doped nanocomposites for future energy, sensing, and memory applications.     

Displacive Order–Disorder Behavior and Intrinsic Clustering of Lattice Distortions in Bi‐Substituted NaNbO3

Perovskite‐like NaNbO₃‐Bi_1/3NbO₃ solid solutions are studied to understand the interactions between octahedral rotations, which dominate the structural behavior of NaNbO₃ and displacive disorder of Bi present in Bi_1/3NbO₃. Models of instantaneous structures for representative compositions are obtained by refining atomic coordinates against X‐ray total scattering and extended X‐ray‐absorption fine structure data, with additional input obtained from transmission electron microscopy. A mixture of distinct cations and vacancies on the cuboctahedral A‐sites in Na_1?3xBi_xNbO₃ (x ≤ 0.2) results in 3D nanoscale modulations of structural distortions. This phenomenon is determined by the inevitable correlations in the chemical composition of adjacent unit cells according to the structure type—an intrinsic property of any nonmolecular crystals. Octahedral rotations become suppressed as x increases. Out‐of‐phase rotations vanish for x > 0.1, whereas in‐phase tilts persist up to x = 0.2, although for this composition their correlation length becomes limited to the nanoscale. The loss of out‐of‐phase tilting is accompanied by qualitative changes in the probability density distributions for Bi and Nb, with both species becoming disordered over loci offset from the centers of their respective oxygen cages. Symmetry arguments are used to attribute this effect to different strengths of the coupling between the cation displacements and out‐of‐phase versus in‐phase rotations. The displacive disorder of Bi and Nb combined with nanoscale clustering of lattice distortions are primarily responsible for the anomalous broadening of the temperature dependence of the dielectric constant.     

Non-Classical Electrostriction in Hydrated Acceptor Doped BaZrO3: Proton Trapping and Dopant Size Effect

Point defects such as oxygen vacancies and protonic interstitials are not only essential for ionic conductivity in oxides since they also affect the mechanical and electromechanical properties. These properties of nominally dry and hydrated proton-conducting BaZr_0.85M_0.15O_2.925+δH_2δ (M = Al, Ga, Sc, In, Y, Eu) ceramics are investigated. Doping decreases Young's modulus with increasing ionic radii difference between the dopant and the host. Nominally dry samples show consistently higher Young's moduli than hydrated samples. All samples exhibit large non-classical electrostriction, with a negative electrostriction coefficient M₃₃<0. M₃₃ shows saturation with the field and a non-ideal Debye relaxation with frequency. The low-frequency M₃₃ value for both dry and hydrated samples shows a similar dependence on dopant radius as Young's modulus. For the hydrated samples, the relaxation frequency increases by a factor >100 in the series Ga-Y, emphasizing the importance of proton trapping, with Y-doped samples having minimal trapping energy. This coincides with the fact that the saturation strain for Y-doped samples is also the smallest. In light of these findings, it is concluded that the present data give strong evidence for the existence of defect-related elastic dipoles in acceptor doped barium zirconate and that the non-classical electrostriction originates in their reorientation under electric field.     

Mg3+δSbxBi2−x Family: A Promising Substitute for the State‐of‐the‐Art n‐Type Thermoelectric Materials near Room Temperature

The Bi₂Te_3?xSe_x family has constituted n‐type state‐of‐the‐art thermoelectric materials near room temperature (RT) for more than half a century, which dominates the active cooling and novel heat harvesting application near RT. However, the drawbacks of a brittle nature and Te‐content restricts the possibility for exploring potential applications. Here, it is shown that the Mg_3+δSb_xBi_2?x family ((ZT)_avg = 1.05) could be a promising substitute for the Bi₂Te_3?xSe_x family ((ZT)_avg = 0.9–1.0) in the temperature range of 50–250 °C based on the comparable thermoelectric performance through a synergistic effect from the tunable bandgap using the alloy effect and the suppressible Mg‐vacancy formation using an interstitial Mn dopant. The former is to shift the optimal thermoelectric performance to near RT, and the latter is helpful to partially decouple the electrical transport and thermal transport in order to get an optimal RT power factor. The positive temperature dependence of the bandgap suggests this family is also a superior medium‐temperature thermoelectric material for the significantly suppressed bipolar effect. Furthermore, a two times higher mechanical toughness, compared with the Bi₂Te_3?xSe_x family, allows for a promising substitute for state‐of‐the‐art n‐type thermoelectric materials near RT.     

Assessment of Novel Long‐Lasting Ceria‐Stabilized Zirconia‐Based Ceramics with Different Surface Topographies as Implant Materials

The development of long‐lasting zirconia‐based ceramics for implants, which are not prone to hydrothermal aging, is not satisfactorily solved. Therefore, this study is conceived as an overall evaluation screening of novel ceria‐stabilized zirconia–alumina–aluminate composite ceramics (ZA₈Sr₈‐Ce11) with different surface topographies for use in clinical applications. Ceria‐stabilized zirconia is chosen as the matrix for the composite material, due to its lower susceptibility to aging than yttria‐stabilized zirconia (3Y‐TZP). This assessment is carried out on three preclinical investigation levels, indicating an overall biocompatibility of ceria‐stabilized zirconia‐based ceramics, both in vitro and in vivo. Long‐term attachment and mineralized extracellular matrix (ECM) deposition of primary osteoblasts are the most distinct on porous ZA₈Sr₈‐Ce11_p surfaces, while ECM attachment on 3Y‐TZP and ZA₈Sr₈‐Ce11 with compact surface texture is poor. In this regard, the animal study confirms the porous ZA₈Sr₈‐Ce11_p to be the most favorable material, showing the highest bone‐to‐implant contact values and implant stability post implantation in comparison with control groups. Moreover, the microbiological evaluation reveals no favoritism of biofilm formation on the porous ZA₈Sr₈‐Ce11_p when compared to a smooth control surface. Hence, together with the in vitro in vivo assessment analogy, the promising clinical potential of this novel ZA₈Sr₈‐Ce11 as an implant material is demonstrated.     

Nanostructured β‐Bi2O3 Fractals on Carbon Fibers for Highly Selective CO2 Electroreduction to Formate

3D Bi₂O₃ fractal nanostructures (f‐Bi₂O₃) are directly self‐assembled on carbon fiber papers (CFP) using a scalable hot‐aerosol synthesis strategy. This approach provides high versatility in modulating the physiochemical properties of the Bi₂O₃ catalyst by a tailorable control of its crystalline size, loading, electron density as well as providing exposed stacking of the nanomaterials on the porous CFP substrate. As a result, when tested for electrochemical CO₂ reduction reactions (CO₂RR), these f‐Bi₂O₃ electrodes demonstrate superior conversion of CO₂ to formate (HCOO^?) with low onset overpotential and a high mass‐specific formate partial current density of ?52.2 mA mg^?1, which is ≈3 times higher than that of the drop‐casted control Bi₂O₃ catalyst (?15.5 mA mg^?1), and a high Faradaic efficiency (FE_HCOO^?) of 87% at an applied potential of ?1.2 V versus reversible hydrogen electrode. The findings reveal that the high exposure of roughened β‐phase Bi₂O₃/Bi edges and the improved electron density of these fractal structures are key contributors in attainment of high CO₂RR activity.     

Optimized La0.6Sr0.4CoO3–δ Thin‐Film Electrodes with Extremely Fast Oxygen‐Reduction Kinetics

La_0.6Sr_0.4CoO_3–δ (LSC) thin‐film electrodes are prepared on yttria‐stabilized zirconia (YSZ) substrates by pulsed laser deposition at different deposition temperatures. The decrease of the film crystallinity, occurring when the deposition temperature is lowered, is accompanied by a strong increase of the electrochemical oxygen exchange rate of LSC. For more or less X‐ray diffraction (XRD)‐amorphous electrodes deposited between ca. 340 and 510 °C polarization resistances as low as 0.1 Ω cm² can be obtained at 600 °C. Such films also exhibit the best stability of the polarization resistance while electrodes deposited at higher temperatures show a strong and fast degradation of the electrochemical kinetics (thermal deactivation). Possible reasons for this behavior and consequences with respect to the preparation of high‐performance solid oxide fuel cell (SOFC) cathodes are discussed.     

Ti‐Doping to Reduce Conductivity in Bi0.85Nd0.15FeO3 Ceramics

In 2009, Karimi et al. reported that Bi_1‐xNd_xFeO₃ 0.15 ≤ x ≤ 0.25 exhibited a PbZrO₃ (PZ)‐like structure. These authors presented some preliminary electrical data for the PZ‐like composition but noted that the conductivity was too high to obtain radio‐frequency measurements representative of the intrinsic properties. In this study, Bi_0.85Nd_0.15Fe_1‐yTi_yO₃ (0 ≤ y ≤ 0.1) were investigated, in which Ti acted as a donor dopant on the B‐site. In contrast to the original study of Karimi et al., X‐ray diffraction (XRD) of Bi_0.85Nd_0.15FeO₃ revealed peaks which were attributed to a mixture of PZ‐like and rhombohedral structures. However, as the Ti (0 < y ≤ 0.05) concentration increased, the rhombohedral peaks disappeared and all intensities were attributed to the PZ‐like phase. For y = 0.1, broad XRD peaks indicated a significant decrease in effective diffracting volume. Electron diffraction confirmed that the PZ‐like phase was dominant for y ≤ 0.05, but for y = 0.1, an incommensurate structure was present, consistent with the broadened XRD peaks. The substitution of Fe³⁺ by Ti⁴⁺ decreased the dielectric loss at room temperature from >0.3 to <0.04 for all doped compositions, with a minimum (0.015) observed for y = 0.03. The decrease in dielectric loss was accompanied by a decrease in the room temperature bulk conductivity from ～1 mS cm^?1 to <1 μS cm^?1 and an increase in bulk activation energy from 0.29 to >1 eV. Plots of permittivity (?_r) versus temperature for 0.01 ≤ y ≤ 0.05 revealed a step rather than a peak in ?_r on heating at the same temperature determined for the antiferroelectric–paraelectric phase transition by differential scanning calorimetry. Finally, large electric fields were applied to all doped samples which resulted in a linear dependence of polarisation on the electric field similar to that obtained for PbZrO₃ ceramics under equivalent experimental conditions.     

The β‐to‐γ Transition in BiFeO3: A Powder Neutron Diffraction Study

High‐temperature powder neutron diffraction experiments are conducted around the reported β–γ phase transition (～930 °C) in BiFeO₃. The results demonstrate that while a small volume contraction is observed at the transition temperature, consistent with an insulator–metal transition, both the β‐ and γ‐phase of BiFeO₃ exhibit orthorhombic symmetry; i.e., no further increase of symmetry occurs during this transition. The γ‐orthorhombic phase is observed to persist up to a temperature of approximately 950 °C before complete decomposition into Bi₂Fe₄O₉ (and liquid Bi₂O₃), which subsequently begins to decompose at approximately 960 °C.     

Enhanced Thermoelectric Performance in 18‐Electron Nb0.8CoSb Half‐Heusler Compound with Intrinsic Nb Vacancies

Typical 18‐electron half‐Heusler compounds, ZrNiSn and NbFeSb, are identified as promising high‐temperature thermoelectric materials. NbCoSb with nominal 19 valence electrons, which is supposed to be metallic, is recently reported to also exhibit thermoelectric properties of a heavily doped n‐type semiconductor. Here for the first time, it is experimentally demonstrated that the nominal 19‐electron NbCoSb is actually the composite of 18‐electron Nb_0.8+δCoSb (0 ≤ δ < 0.05) and impurity phases. Single‐phase Nb_0.8+δCoSb with intrinsic Nb vacancies, following the 18‐electron rule, possesses improved thermoelectric performance, and the slight change in the content of Nb vacancies has a profound effect on the thermoelectric properties. The carrier concentration can be controlled by varying the Nb deficiency, and the optimization of the thermoelectric properties can be realized within the narrow pure phase region. Benefiting from the elimination of impurity phases and the optimization of carrier concentration, thermoelectric performance is remarkably enhanced by ≈100% and a maximum zT of 0.9 is achieved in Nb_0.83CoSb at 1123 K. This work expands the family of half‐Heusler thermoelectric materials and opens a new avenue for searching for nominal 19‐electron half‐Heusler compounds with intrinsic vacancies as promising thermoelectric materials.     

Voltage‐Controlled Nonstoichiometry in Oxide Thin Films: Pr0.1Ce0.9O2−δ Case Study

While the properties of functional oxide thin films often depend strongly on oxygen stoichiometry, there have been few means available for its control in a reliable and in situ fashion. This work describes the use of DC bias as a means of systematically controlling the stoichiometry of oxide thin films deposited onto yttria‐stabilized zirconia substrates. Impedance spectroscopy is performed on the electrochemical cell Pr_0.1Ce_0.9O_2?δ (PCO)/YSZ/Ag for conditions: T = 550 to 700 °C, pO ₂ = 10^?4 to 1 atm, and ΔE = ‐100 to 100 mV. The DC bias ΔE is used to control the effective pO ₂ or oxygen activity at the PCO/YSZ interface. The non‐stoichiometry (δ) of the PCO films is calculated from the measured chemical capacitance (C_chem ). These δ values, when plotted isothermally as a function of effective pO ₂, established, either by the surrounding gas composition alone, or in combination with applied bias, agree well with each other and to predictions based on a previously determined defect model. These results confirm the suitability of using bias to precisely control δ of thin films in an in situ fashion and simultaneously monitor these changes by measurement of C_chem . Of further interest is the ability to reach effective pO ₂s as high as 280 atm.     

Effect of bismuth addition on sintering behavior and microwave dielectric properties of zinc titanate ceramics

The influences of Bi₂O₃ addition on the sintering behavior and microwave dielectric properties of ZnO-TiO₂ ceramics were investigated. ZnO-TiO₂ ceramics were prepared with conventional solid-state method and sintered at temperatures from 950°C to 1,100°C. The sintering temperature of ZnO-TiO₂ ceramics with Bi₂O₃ addition could be effectively reduced to 1,000°C due to the liquidphase effects resulting from the additives. A proper amount of Bi₂O₃ addition could effectively improve the densification and dielectric properties of ZnO-TiO₂ ceramics. The temperature coefficient of resonant frequency could be controlled by varying the sintering temperature and lead to a zero τ_f value. At 1,000°C, 1ZnO-1TiO₂ ceramics with 1 wt.% addition gave better microwave dielectric properties ɛ_r of 29.3, a Q × f value of 22,000 GHz at 8.36 GHz, and a τ_f value of +17.4 ppm/ °C.     

Synthesis and characterisation of the thallium‐substituted superconducting cuprate Hg1−xTlxBa2Ca2Cu3O8+δ

The objective of this research is the development of chemical routes for the preparation of high‐temperature superconducting powders. A simple sol–gel synthesis technique for preparing the superconducting compound Hg_1−xTl_xBa₂Ca₂Cu₃O_8+δ (Hg,Tl‐1223) has been refined. A systematic study of the influence of synthesis conditions on the phase purity of the obtained superconducting material is described. We have demonstrated that superconducting Hg_1−xTl_xBa₂Ca₂Cu₃O_8+δ phase of good quality can be obtained by this sol–gel synthesis method. Replacing Hg by Tl in the bulk material significantly increased the superconducting transition temperature. An as‐prepared sample showed T_C(onset)=136 K, but after oxygen treatment the critical temperature of Hg_1−xTl_xBa₂Ca₂Cu₃O_8+δ superconductor increased to 140 K. Copyright © 1999 John Wiley & Sons, Ltd.     

Efficient Field Emission from Vertically Aligned Cu2O1‐δ(111) Nanostructure Influenced by Oxygen Vacancy

In the architecture described, cuprous oxide (Cu₂O) is tamed to be highly (111) plane oriented nanostructure through adjusting the deposition postulate by glancing angle deposition technique. In the controlled atmosphere oxygen vacancy is introduced into the Cu₂O crystal subsequently fostering an impurity energy state (E_im) close to the conduction band. Our model of Cu₂O electronic structure using density functional theory suggests that oxygen vacancies enhance the electron donating ability because of unshared d‐electrons of Cu atoms (nearest to the vacancy site), allowing to pin the work function energy level around 0.28 eV compared to the bulk. This result is also complemented by Kelvin probe force microscopy analysis and X‐ray photoelectron spectroscopy method. Oxygen vacancy in Cu₂O (Cu₂O_1‐δ) exhibits promising field emission properties with interesting field electron tunneling behavior at different applied fields. The films show very low turn‐on and threshold voltages of value 0.8 and 2.4 V μm^?1 respectively which is influenced by the oxygen vacancy. Here, a correlation between the work function modulation due to the oxygen vacancy and enhancement of field emission of Cu₂O_1–δ nanostructure is demonstrated. This work reveals a promising new vision for Cu₂O as a low power field emitter device.     

Controlled Polarizability of One‐Nanometer‐Thick Oxide Nanosheets for Tailored,High‐κ Nanodielectrics

An important challenge in current microelectronics research is the development of techniques for making smaller, higher‐performance electronic components. In this context, the fabrication and integration of ultrathin high‐κ dielectrics with good insulating properties is an important issue. Here, we report on a rational approach to produce high‐performance nanodielectrics using one‐nanometer‐thick oxide nanosheets as a building block. In titano niobate nanosheets (TiNbO₅, Ti₂NbO₇, Ti₅NbO₁₄), the octahedral distortion inherent to site‐engineering by Nb incorporation results in a giant molecular polarizability, and their multilayer nanofilms exhibit a high dielectric constant (160–320), the largest value seen so far in high‐κ nanofilms with thickness down to 10 nm. Furthermore, these superior high‐κ properties are fairly temperature‐independent with low leakage‐current density (<10^?7 A cm^?2). This work may provide a new recipe for designing nanodielectrics desirable for practical high‐κ devices.     

Symmetry Modulation and Enhanced Multiferroic Characteristics in Bi1‐xNdxFeO3 Ceramics

BiFeO₃ is recognized as the most important room temperature single phase multiferroic material. However, the weak magnetoelectric (ME) coupling remains as a key issue, which obstructs its applications. Since the magnetoelectric coupling in BiFeO₃ is essentially hindered by the cycloidal spin structure, here efforts to improve the magnetoelectric coupling by destroying the cycloidal state and switching to the weak ferromagnetic state through symmetry modulation are reported. The structure is tuned from polar R3c to polar Pna2₁, and finally to nonpolar Pbnm by forming Bi_1‐xNd_xFeO₃ solid solutions, where two morphotropic phase boundaries (MPBs) are detected. Greatly enhanced ferroelectric polarization is obtained together with the desired weak ferromagnetic characteristics in Bi_1‐xNd_xFeO₃ ceramics at the compositions near MPBs. The change of magnetic state from antiferromagnetic (cycloidal state) to ferromagnetic (canted antiferromagnetic) is confirmed by the observation of magnetic domains using magnetic force microscopy. More interestingly, combining experiments and first‐principles‐based simulations, an electric field‐induced structural and magnetic transition from Pna2₁ back to R3c is demonstrated, providing a great opportunity for electric field‐controlled magnetism, and this transition is shown to be reversible with additional thermal treatment.     

A New Family of Proton‐Conducting Electrolytes for Reversible Solid Oxide Cells: BaHfxCe0.8−xY0.1Yb0.1O3−δ

Reversible solid oxide cells based on ceramic proton conductors have potential to be the most efficient system for large‐scale energy storage. The performance and long‐term durability of these systems, however, are often limited by the ionic conductivity or stability of the proton‐conducting electrolyte. Here new family of solid oxide electrolytes, BaHf_xCe_0.8?xY_0.1Yb_0.1O_3?δ (BHCYYb), which demonstrate a superior ionic conductivity to stability trade‐off than the state‐of‐the‐art proton conductors, BaZr_xCe_0.8?xY_0.1Yb_0.1O_3?δ (BZCYYb), at similar Zr/Hf concentrations, as confirmed by thermogravimetric analysis, Raman, and X‐ray diffraction analysis of samples over 500 h of testing are reported. The increase in performance is revealed through thermodynamic arguments and first‐principle calculations. In addition, lab scale full cells are fabricated, demonstrating high peak power densities of 1.1, 1.4, and 1.6 W cm^?2 at 600, 650, and 700 °C, respectively. Round‐trip efficiencies for steam electrolysis at 1 A cm^?2 are 78%, 72%, and 62% at 700, 650, and 600 °C, respectively. Finally, CO₂? H₂O electrolysis is carried out for over 700 h with no degradation.     

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

Atomic‐layer‐deposited aluminium oxide (Al₂O₃) is applied as rear‐surface‐passivating dielectric layer to passivated emitter and rear cell (PERC)‐type crystalline silicon (c‐Si) solar cells. The excellent passivation of low‐resistivity p‐type silicon by the negative‐charge‐dielectric Al₂O₃ is confirmed on the device level by an independently confirmed energy conversion efficiency of 20·6%. The best results are obtained for a stack consisting of a 30 nm Al₂O₃ film covered by a 200 nm plasma‐enhanced‐chemical‐vapour‐deposited silicon oxide (SiO_x) layer, resulting in a rear surface recombination velocity (SRV) of 70 cm/s. Comparable results are obtained for a 130 nm single‐layer of Al₂O₃, resulting in a rear SRV of 90 cm/s. Copyright © 2008 John Wiley & Sons, Ltd.