Three‐dimensional microstructure characterisation of thermoplastic polyolefin blends

The size, shape and distribution of different phases in thermoplastic polyolefin (TPO) blends and composites are critical to the properties of the materials, but can be difficult to characterise. Here we report the combination of heavy metal staining and focused ion beam – scanning electron microscopy (FIB‐SEM) to reveal the three‐dimensional (3D) structure of an elastomer‐modified poly(propylene) and a talc filled elastomer‐modified poly(propylene). High‐quality, high‐resolution serial images were collected and the 3D structures were characterised quantitatively.     

Focused ion beam scanning electron microscopy in biology

Since the end of the last millennium, the focused ion beam scanning electron microscopy (FIB‐SEM) has progressively found use in biological research. This instrument is a scanning electron microscope (SEM) with an attached gallium ion column and the 2 beams, electrons and ions (FIB) are focused on one coincident point. The main application is the acquisition of three‐dimensional data, FIB‐SEM tomography. With the ion beam, some nanometres of the surface are removed and the remaining block‐face is imaged with the electron beam in a repetitive manner. The instrument can also be used to cut open biological structures to get access to internal structures or to prepare thin lamella for imaging by (cryo‐) transmission electron microscopy. Here, we will present an overview of the development of FIB‐SEM and discuss a few points about sample preparation and imaging.     

Application of the low-loss scanning electron microscope image to integrated circuit technology part II--chemically-mechanically planarized samples.

Chemical-mechanical planarization (CMP) is a process that gives a flat surface on a silicon wafer by removing material from above a chosen level. This flat surface must then be reviewed (typically using a laser) and inspected for scratches and other topographic defects. This inspection has been done using both the atomic force microscope (AFM) and the scanning electron microscope (SEM), each of which has its own advantages and disadvantages. In this study, the low-loss electron (LLE) method in the SEM was applied to CMP samples at close to a right angle to the beam. The LLEs show shallower topographic defects more clearly than it is possible with the secondary electron (SE) imaging method. These images were then calibrated and compared with those obtained using the AFM, showing the value of both methods. It is believed that the next step is to examine such samples at a right angle to the beam in the SEM using the magnetically filtered LLE imaging method.     

Characterization of the μ and P phase precipitates in the CMSX‐4 single crystal superalloy

A combination of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and scanning‐transmission electron microscopy (STEM) using high‐angle annular‐dark‐field (HAADF) imaging, focussed ion beam‐ scanning electron microscopy (FIB‐SEM) tomography, selected area electron diffraction with beam precession (PED), as well as spatially resolved energy‐dispersive X‐ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS), was used to investigate topologically close‐packed (TCP) phases, occurring in the CMSX‐4 superalloy subjected to high temperature annealing and creep deformation. Structural and chemical analyses were performed to identify the TCP phases and provide information concerning the compositional partitioning of elements between them. The results of SEM and FIB‐SEM tomography revealed the presence of merged TCP particles, which were identified by TEM and PED analysis as coprecipitates of the μ and P phases. Inside the TCP particles that were several micrometres in size, platelets of alternating μ and P phases of nanometric width were found. The combination of STEM‐HAADF imaging with spatially resolved EDS and EELS microanalysis allowed determination of the significant partitioning of the constituent elements between the μ and P phases.     

FIB/SEM characterization of carbon-based fibers

The aim of this paper is to show how a focused ion beam combined with a scanning electron microscope (FIB/SEM machine) can be adopted to characterize composite fibers with different electrical behavior and to gain information about their production and modification. This comparative morphology investigation is carried out on polyacrylonitrile (PAN) carbon fibers and their chemical precursor (the oxidized PAN or oxypan) which has different electrical properties. Fibers are imaged by electron and ion beams and sectioned by the focused ion beam (FIB). A sample of oxypan fibers processed by a radio frequency (RF) plasma is also investigated and the role of the conductive carbon layer around their unmodified, insulating bulk is discussed. A suitable developed edge detection technique (EDT) on electron, ion images, and after the FIB sectioning, provides quantitative information about the thickness of the created layer.     

Parameters and mechanisms governing image contrast in scanning electron microscopy of single-walled carbon nanotubes

Image formation of single-walled carbon nanotubes (SWNTs) in the scanning electron microscope (SEM) is peculiarly sensitive to primary electron landing energy, imaging history, sample/substrate geometry, electrical conductivity, sample contamination, and substrate charging. This sensitivity is probably due to the extremely small interaction volume of the SWNTs' monolayered, nanoscale structures with the electron beam. Traditional electron beam/bulk specimen interaction models appear unable to explain the contrast behavior when directly applied to SWNTs. We present one systematic case study of SWNT SEM imaging with special attention to the above parameters and propose some physical explanations for the effect of each. We also demonstrate that it is possible to employ voltage biasing to counteract this extrinsic behavior, gain better control of the image contrast, and facilitate the interpretation of SWNT images in the SEM.     

Deconvolution of scanning electron microscopy images

This paper describes a method of removing blurs in scanning electron microscopy (SEM) images caused by the existence of a finite beam size. Although the resolution of electron microscopy images has been dramatically improved by the use of high-brightness electron guns and low-aberration electron lenses, it is still limited by lens aberration and electron diffraction. Both are inevitable in practical electron optics. Therefore, a further reduction in resolution by improving SEM hardware seems difficult. In order to overcome this difficulty, computer deconvolution has been proposed for SEM images. In the present work, the SEM image is deconvoluted using the electron beam profile estimated from beam optics calculation. The results show that the resolution of the deconvoluted image is improved to one half of the resolution of the original SEM image.     

A multimodal microcharacterisation of trace‐element zonation and crystallographic orientation in natural cassiterite by combining cathodoluminescence,EBSD, EPMA and contribution of confocal Raman‐in‐SEM imaging

In cassiterite, tin is associated with metals (titanium, niobium, tantalum, indium, tungsten, iron, manganese, mercury). Knowledge of mineral chemistry and trace‐element distribution is essential for: the understanding of ore formation, the exploration phase, the feasibility of ore treatment, and disposal/treatment of tailings after the exploitation phase. However, the availability of analytical methods make these characterisations difficult. We present a multitechnical approach to chemical and structural data that includes scanning electron microscopy (SEM)‐based imaging and microanalysis techniques such as: secondary and backscattered electrons, cathodoluminescence (CL), electron probe microanalyser (EPMA), electron backscattered diffraction (EBSD) and confocal Raman‐imaging integrated in a SEM (RISE). The presented results show the complementarity of the used analytical techniques. SEM, CL, EBSD, EPMA provide information from the interaction of an electron beam with minerals, leading to atomistic information about their composition, whereas RISE, Raman spectroscopy and imaging completes the studies with information about molecular vibrations, which are sensitive to structural modifications of the minerals. The correlation of Raman bands with the presence/absence of Nb, Ta, Fe (heterovalent substitution) and Ti (homovalent substitution) is established at a submicrometric scale. Combination of the different techniques makes it possible to establish a direct link between chemical and crystallographic data of cassiterite.     

Electron beam blanking systems

Electron beam blanking in the scanning electron microscope (SEM) by deflection over a chopping aperture is reviewed. The first part is concerned with electron beam deflection structures and driving methods, the second part with electron optics of deflection blanking systems in the SEM.     

Monte Carlo Simulation of CD‐SEM Images for Linewidth and Critical Dimension Metrology

In semiconductor industry, strict critical dimension control by using a critical dimension scanning electron microscope (CD‐SEM) is an extremely urgent task in near‐term years. A Monte Carlo simulation model for study of CD‐SEM image has been established, which is based on using Mott's cross section for electron elastic scattering and the full Penn dielectric function formalism for electron inelastic scattering and the associated secondary electron (SE) production. In this work, a systematic calculation of CD‐SEM line‐scan profiles and 2D images of trapezoidal Si lines has been performed by taking into account different experimental factors including electron beam condition (primary energy, probe size), line geometry (width, height, foot/corner rounding, sidewall angle, and roughness), material properties, and SE signal detection. The influences of these factors to the critical dimension metrology are investigated, leading to build a future comprehensive model‐based library. SCANNING 35: 127‐139, 2013. © 2012 Wiley Periodicals, Inc.     

The relationship between accelerating voltage and electron detection modes to linewidth measurement in an SEM

The basic premise underlying the use of the scanning electron microscope (SEM) for linewidth metrology in semiconductor research and production applications is that the video image acquired, displayed, analyzed, and ultimately measured accurately reflects the structure of interest. However, it has been clearly demonstrated that image distortions can be caused by the detected secondary electrons not originating at the point of impact of the primary electron beam and by the type and location of the secondary electron detector. These effects and their contributions to the actual image or linewidth measurement have not been fully evaluated. Effects due to uncertainties in the actual location of electron origination do not affect pitch (line center-to-center or similar-edge-location-to-similar-edge-location spacing) measurements as long as the lines have the same edge geometries and similar profiles of their images in the SEM. However, in linewidth measurement applications, the effects of edge location uncertainty are additive and thus give twice the edge detection error to the measured width. The basic intent of this work is to demonstrate the magnitude of the errors introduced by beam/specimen interactions and the mode of signal detection at a variety of beam acceleration voltages and to discuss their relationship to precise and accurate metrology.     

Tomography of insulating biological and geological materials using focused ion beam (FIB) sectioning and low-kV BSE imaging

Tomography in a focused ion beam (FIB) scanning electron microscope (SEM) is a powerful method for the characterization of three-dimensional micro- and nanostructures. Although this technique can be routinely applied to conducting materials, FIB–SEM tomography of many insulators, including biological, geological and ceramic samples, is often more difficult because of charging effects that disturb the serial sectioning using the ion beam or the imaging using the electron beam. Here, we show that automatic tomography of biological and geological samples can be achieved by serial sectioning with a focused ion beam and block-face imaging using low-kV backscattered electrons. In addition, a new ion milling geometry is used that reduces the effects of intensity gradients that are inherent in conventional geometry used for FIB–SEM tomography.     

Image contrast enhancement of Ni/YSZ anode during the slice‐and‐view process in FIB‐SEM

Focused ion beam‐scanning electron microscopy (FIB‐SEM) is a widely used and easily operational equipment for three‐dimensional reconstruction with flexible analysis volume. It has been using successfully and increasingly in the field of solid oxide fuel cell. However, the phase contrast of the SEM images is indistinct in many cases, which will bring difficulties to the image processing. Herein, the phase contrast of a conventional Ni/yttria stabilized zirconia anode is tuned in an FIB‐SEM with In‐Lens secondary electron (SE) and backscattered electron detectors. Two accessories, tungsten probe and carbon nozzle, are inserted during the observation. The former has no influence on the contrast. When the carbon nozzle is inserted, best and distinct contrast can be obtained by In‐Lens SE detector. This method is novel for contrast enhancement. Phase segmentation of the image can be automatically performed. The related mechanism for different images is discussed.     

Primary considerations for image enhancement in high-pressure scanning electron microscopy

The mechanisms of electron beam scattering are examined to evaluate its effect on contrast and resolution in high-pressure scanning electron microscopy (SEM) techniques reported in the literature, such as moist-environment ambient-temperature SEM (MEATSEM) or environmental SEM (ESEM). The elastic and inelastic scattering cross-sections for nitrogen are calculated in the energy range 5–25 keV. The results for nitrogen are verified by measuring the ionization efficiency, and measurements are also made for water vapour. The effect of the scattered beam on the image contrast was assessed and checked experimentally for a step contrast function at 20 kV beam voltage. A considerable degree of beam scattering can be tolerated in high-pressure SEM operation without a significant degradation in resolution. The image formation and detection techniques in high-pressure SEM are considered in detail in the accompanying paper.     

Sample preparation and microscopical investigation techniques for metal and ceramics containing graphite and graphene‐like layered particles

Scanning electron microscopy (SEM) techniques are widely used in microstructural investigations of materials since it can provide surface morphology, topography, and chemical information. However, it is important to use correct imaging and sample preparation techniques to reveal the microstructures of materials composed of components with different polishing characteristics such as grey cast iron, graphene platelets (GPLs)‐added SiAlON composite, SiC and B₄C ceramics containing graphite or graphene‐like layered particles. In this study, all microstructural details of gray cast iron were successfully revealed by using argon ion beam milling as an alternative to the standard sample preparation method for cast irons, that is, mechanical polishing followed by chemical etching. The in‐lens secondary electron (I‐L‐SE) image was clearly displayed on the surface details of the graphites that could not be revealed by backscattered electron (BSE) and Everhart–Thornley secondary electron (E‐T SE) images. Mechanical polishing leads to pull‐out of GPLs from SiAlON surface, whereas argon ion beam milling preserved the GPLs and resulted in smooth surface. Grain and grain boundaries of polycrystalline SiC and B₄C were easily revealed by using I‐L SE image in the SEM after only mechanical polishing without any etching process. While the BSE and E‐T SE images did not clearly show the residual graphites in the microstructure, their distribution in the B₄C matrix was fully revealed in the I‐L SE image.     

Electron Beam Induced Growth of Silver Nanoparticles

An electron beam inducing method for sprouting large quantities of silver nanoparticles on the surface of silver chloride particles is reported. The electron beam driven process was characterized by time‐dependent scanning electron microscope (SEM) and energy dispersive spectrum (EDS), allowing for observing several key intermediates in and characteristics of the growth process. Theoretical calculation coupled with experimental observation demonstrated that the growth of silver nanoparticles was mostly related to the current density of electron beam. Decomposition of the silver chloride on the surface of sample was under electron beam irradiation resulted in silver nanoparticles and chlorine. This phenomenon could be useful in developing a novel mechanism for preparation of nanostructures and proposing a reference to avoid image distortion during the characterization of silver compounds under SEM. SCANNING 35: 69‐74, 2013. © 2012 Wiley Periodicals, Inc.     

High resolution at low beam energy in the SEM: resolution measurement of a monochromated SEM

The resolution of secondary electron low beam energy imaging of a scanning electron microscope equipped with a monochromator is quantitatively measured using the contrast transfer function (CTF) method. High-resolution images, with sub-nm resolutions, were produced using low beam energies. The use of a monochromator is shown to quantitatively improve the resolution of the SEM at low beam energies by limiting the chromatic aberration contribution to the electron probe size as demonstrated with calculations and images of suitable samples. Secondary electron image resolution at low beam energies is ultimately limited by noise in the images as shown by the CTFs.     

Argon broad ion beam tomography in a cryogenic scanning electron microscope: a novel tool for the investigation of representative microstructures in sedimentary rocks containing pore fluid

The contribution describes the implementation of a broad ion beam (BIB) polisher into a scanning electron microscope (SEM) functioning at cryogenic temperature (cryo). The whole system (BIB‐cryo‐SEM) provides a first generation of a novel multibeam electron microscope that combines broad ion beam with cryogenic facilities in a conventional SEM to produce large, high‐quality cross‐sections (up to 2 mm²) at cryogenic temperature to be imaged at the state‐of‐the‐art SEM resolution. Cryogenic method allows detecting fluids in their natural environment and preserves samples against desiccation and dehydration, which may damage natural microstructures. The investigation of microstructures in the third dimension is enabled by serial cross‐sectioning, providing broad ion beam tomography with slices down to 350 nm thick. The functionalities of the BIB‐cryo‐SEM are demonstrated by the investigation of rock salts (synthetic coarse‐grained sodium chloride synthesized from halite‐brine mush cold pressed at 150 MPa and 4.5 GPa, and natural rock salt mylonite from a salt glacier at Qom Kuh, central Iran). In addition, results from BIB‐cryo‐SEM on a gas shale and Boom Clay are also presented to show that the instrument is suitable for a large range of sedimentary rocks. For the first time, pore and grain fabrics of preserved host and reservoir rocks can be investigated at nm‐scale range over a representative elementary area. In comparison with the complementary and overlapping performances of the BIB‐SEM method with focused ion beam‐SEM and X‐ray tomography methods, the BIB cross‐sectioning enables detailed insights about morphologies of pores at greater resolution than X‐ray tomography and allows the production of large representative surfaces suitable for FIB‐SEM investigations of a specific representative site within the BIB cross‐section.     

Measurement of electron probe beam diameter by digital image processing

The present report illustrates a computerized method for precise measurement of the diameter of an electron beam. The value of this measurement extends beyond simply providing an accurate estimate of resolution. Other salient areas which will benefit include quantitative X-ray microanalysis, energy loss spectroscopy, diffraction studies, and electron beam lithography. The biological sciences as well as the material sciences will gain enormously from improved accuracy in measurement (control) of beam diameter. It is anticipated that most or all of the mathematical manipulations outlined in this paper will be incorporated into digital electronic packages which will perform the functions automatically for setting the electron beam diameter to the scientist's choice. The purpose of the present report is to indicate some of the principles involved so that as electron microscopy becomes more computerized and automated, the user will have some understanding of what the electronics are doing rather than simply depressing a button or two and ignoring the power of what resides within the walls of the instrument. The performance of a scanning electron microscope (SEM) and a scanning transmission electron microscope (STEM) is roughly determined by the incident electron probe beam size (diameter) involving a sufficient electron current. In the present paper, the diameter of an ultrafine electron beam is measured indirectly from the information given by the blurring of an edge in a STEM or a SEM image of a crystalline specimen with fine, sharp edges. The obtained data were processed by digital image processing methods which give an accurate value of the beam diameter. For confirming the validity of this method, a suitable simulation based on the convolution theorem was performed. By using this measurement, we could measure the diameter of an ultrafine electron beam down to 2 nm, which could not be measured easily by previous techniques.     

Transient of scanning electron microscopic images for a buried microstructure in insulators

We clarify the transient process and its mechanism of scanning electron microscope (SEM) images of a trench microstructure buried in insulators. First, interface charges of primary electrons trapped on the trench are derived from the charging model of a capacitor considering the electron beam induced current, and the surface potential is therefore assumed. The SEM signal current is then determined from its simplified relation with the surface potential. Calculated profiles of the secondary electron (SE) signal current and their time-evolution behaviors can well fit the transient of the experimental SEM images. Results show that the variation of the surface potential due to the transient interface charges and the effect of SE redistribution result in transients of the SEM imaging signal and the image width of the buried trench.