非线性高双折射色散缓变光纤中矢量调制不稳定性

利用光脉冲在光纤中传播时所遵守的相干非线性薛定谔耦合方程,研究了在偏振方向 沿两个双折射轴的分量强度相等时,色散缓变光纤中反常色散区和正常色散区所产生的调制不稳定性。结果表明在反常色散区和正常色散区,随传输距离的增加调制功率区域加宽,对应不同的功率区域输入脉冲有不同的增益谱,并且当输入脉冲功率一定时,随传输距离的增加导致增益谱表现出明显的不同。     

强双折射色散缓变光纤中偏振方向矢量调制不稳定性

利用光脉冲在非线性双折射光纤中传播时所遵守的相干耦合非线性薛定谔方程,研究了强双折射色散缓变光纤中偏振方向与双折射轴成任意角度时,在反常色散区和正常色散区所产生的调制不稳定性.结果表明：在反常色散区对于任意的偏振角和任意输入功率的光脉冲都产生调制不稳定性,正常色散区存在着不稳定区域和稳定区域,对应不同的不稳定区域输入临界功率不同,脉冲有不同的增益谱.并且,给出了调制不稳定性增益谱随传输距离和偏振角的变化关系.     

高双折射光纤中矢量调制不稳定性

利用光脉冲在光纤中传播时所遵守的相干非线性薛定谔耦合方程,研究了偏振方向沿两个双折射轴的分量强度相等时,在反常色散区和正常色散区所产生的调制不稳定性.结果表明在反常色散区和正常色散区,对应不同的功率区域输入脉冲有不同的增益谱,并且当双折射性质变化时导致增益谱表现出明显的不同.     

保偏阶跃光纤中矢量调制不稳定性

利用光脉冲在非线性双折射光纤中传播时所遵守的相干耦合非线性薛定谔方程，研究了保偏色散阶跃光纤（SWDF）中偏振方向与双折射轴成任意角度时、在反常色散区和正常色散区所产生的调制不稳定性。结果表明：在反常色散区，对于任意的偏振角和任意输入功率的光脉冲都产生调制不稳定性；在正常区散区，存在不稳定区域和稳定区域，对应不同的不稳定区域输入临界功率不同，脉冲有不同的增益谱，给出了调制不稳定性增益谱随传输距离和偏振角的变化关系。     

阶跃光纤中相近频率传输区域的调制不稳定性

利用激光脉冲在光纤中传播时所遵守的相干非线性薛定谔耦合方程,研究了非线性双折射色散阶跃光纤(SWDF)中两相近频率的激光脉冲,其偏振方向相互正交且平行于光纤的双折射轴,且偏振方向沿2个双折射轴的分量强度相等时,在同为反常色散区和正常色散区所产生的调制不稳定性.结果表明,在反常非线性区和正常色散区都能产生调制不稳定性;在正常色散区存在不同的调制不稳定性功率区域,对应不同的功率区域导致增益谱表现出明显的不同,并且,当输入功率和波长差(或频率差)一定时,增益谱随传输距离变化保持形态不变.     

色用缓变光纤中交叉相位调制不稳定性分析

从非线性薛定谔方程出发得到了色散缓变光纤（DDF）中交叉相位调制（XPM）不稳定增益谱。研究了增益谱随入纤功率及光纤纵向色散参量的变化关系。结果表明：反常色散区的增益谱宽比正常色散区宽，且峰值增益高：DDF中XPM不稳定增益谱宽比常规光纤的宽，二者的比值随传输距离和光纤色散参量的乘积成指数增长；DDF的反常色散区是产生调制不稳定的较好的色散介质。     

升余弦变迹布拉格光纤光栅中的调制不稳定性

利用相干耦合非线性薛定谔方程,研究了激光脉冲在升余弦变迹布拉格光纤光栅中传输时,在反常色散区和正常色散区所产生的调制不稳定性。结果表明在反常色散区和正常色散区都能产生调制不稳定性;在反常色散区,当输入功率达到一定数值时,产生明显的规律性增益谱;在正常色散区,在产生调制不稳定性功率区域,调制不稳定性存在并从给定值一直持续到无穷;在反常色散区和正常色散区,增益谱都受到升余弦变迹函数的制约。     

保偏光纤中任意偏振方向矢量调制不稳定性

利用光脉冲在非线性双折射光纤中传播时所遵守的相干耦合非线性薛定谔方程,研究了保偏光纤中偏振方向与双折射轴成任意角度时,在反常色散区和正常色散区所产生的调制不稳定性。结果表明:在反常色散区对于任意的偏振角和任意输入功率的光脉冲都产生调制不稳定性;正常色散区的存在不稳定区域和稳定区域,对应不同的不稳定区域输入临界功率不同,脉冲有不同的增益谱。并且,给出了调制不稳定性增益谱随固有双折射和偏振角的变化关系。     

色散缓变光纤中交叉相位调制不稳定增益谱

从非线性薛定谔方程出发得到了色散缓变光纤中交叉相位调制(XPM)不稳定性的增益谱。结果表明,XPM产生的调制不稳定性既可以在光纤反常色散区产生,也可在正常色散区产生,反常色散区的增益谱宽比正常色散区宽,且色散缓变光纤中XPM不稳定增益谱宽比普通光纤中XPM不稳定增益谱宽宽,增益峰值高。色散缓变光纤是XPM调制不稳定性的较好色散介质。     

利用多重尺度理论对光纤布拉格光栅调制不稳定性研究

利用激光脉冲在光纤光栅中传播时所遵守的相干耦合非线性薛定谔方程,通过多重尺度理论,主要研究了激光脉冲在高斯变迹布拉格光纤光栅中传输时,在反常色散区所产生的调制不稳定性和对应相关参量的关系;结果表明在反常色散区,当输入功率、传输距离一定时,当f=-1禁带之上能带底时,调制不稳定性增益的强度最强、宽度最窄;当远离能带底时强度减弱、宽度变宽;并且,增益谱都受到高斯变迹函数的制约。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks