二维量子细胞神经网络及其图像处理应用

以量子细胞自动机为神经元,以量子细胞自动机的极化率和量子相位为状态变量,提出了一种二维多层的量子细胞神经网络结构;以量子细胞自动机的极化率为像素值,通过选择不同的模板,使得量子细胞神经网络实现水平线和垂直线检测以及图像去噪等功能,仿真结果显示其在图像处理上的有效性。与传统的CNN相比,量子细胞神经网络易于超大规模实现且具有超低功耗、超高集成度等优点。     

一种基于量子细胞自动机的三维量子细胞神经网络

以量子细胞自动机为神经元,提出了一种三维的量子细胞神经网络结构;该量子细胞网络包含上下两层的量子细胞自动机阵列,并引入了A模板、B模板以及阈值的概念.以量子细胞自动机的极化率为像素值,通过选择不同的模板、阈值等参数.使得量子细胞神经网络实现了"与"、"或"、"非"操作以及边缘提取等图像处理功能,并利用MATLAB进行了仿真验证,数值仿真结果验证了其在图像处理上的有效性.与传统的细胞神经网络相比,量子细胞神经网络易于实现超大规模且具有超低功耗、超高集成度等优点.     

A device architecture for computing with quantum dots

We describe a paradigm for computing with interacting quantum dots, quantum-dot cellular automata (QCA). We show how arrays of quantum-dot cells could be used to perform useful computations. A new adiabatic switching paradigm is developed which permits clocked control, eliminates metastability problems, and enables a pipelined architecture     

Carrier Dynamics of Quantum-Dot, Quantum-Dash, and Quantum-Well Semiconductor Optical Amplifiers Operating at 1.55 μm

We assess the influence of the degree of quantum confinement on the carrier recovery times in semiconductor optical amplifiers (SOAs) through an experimental comparative study of three amplifiers, one InAs-InGaAsP-InP quantum dot (0-D), one InAs-InAlGaAs-InP quantum dash (1-D), and one InGaAsP-In-GaAsP-InP quantum well (2-D), all of which operate near 1.55-mum wavelengths. The short-lived (around 1 ps) and long-lived (up to 2 ns) amplitude and phase dynamics of the three devices are characterized via heterodyne pump-probe measurements. The quantum-dot device is found to have the shortest long-lived gain recovery (~80 ps) as well as gain and phase changes indicative of a smaller linewidth enhancement factor, making it the most promising for high-bit-rate applications. The quantum-dot amplifier is also found to have reduced ultrafast transients, due to a lower carrier density in the dots. The quantum-dot gain saturation characteristics and temporal dynamics also provide insight into the nature of the dot energy-level occupancy and the interactions of the dot states with the wetting layer.     

Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications

In recent years, quantum dots have been successfully grown by self-assembling processes. For optoelectronic device applications, the quantum-dot structures have advantages such as reduced phonon scattering, longer carrier lifetime, and lower detector noise due to low-dimensional confinement effect. Comparing to traditional optoelectronic III-V and other materials, self-assembled Ge quantum dots grown on Si substrates have a potential to be monolithically integrated with advanced Si-based technology. In this paper, we describe the growth of self-assembled, guided Ge quantum dots, and Ge quantum-dot superlattices on Si. For dot growth, issues such as growth conditions and their effects on the dot morphology are reviewed. Then vertical correlation and dot morphology evolution are addressed in relation to the critical thickness of Ge quantum-dot superlattices. In addition, we also discuss the quantum-dot p-i-p photodetectors (QDIPs) and n-i-n photodetectors for mid-infrared applications, and the quantum-dot p-i-n photodetectors for 1.3-1.55 mum for communications applications. The wavelength of SiGe p-i-p QDIP can be tuned by the size as grown by various patterning methods. Photoresponse is demonstrated for an n-i-n structure in both the mid-infrared and far-infrared wavelength ranges. The p-i-n diodes exhibit low dark current and high quantum efficiency. The characteristics of fabricated light-emitting diode (LED) devices are also discussed, and room-temperature electroluminescence is observed for Ge quantum-dot LED. The results indicate that Ge dot materials are potentially applicable for mid-infrared (8-12 mum) detectors as well as fiber-optic (1.3-1.55 mum) communications.     

Quantum-Dot Optoelectronic Devices

Self-organized In(Ga)As/Ga(Al)As quantum dots have emerged as useful nanostructures that can be epitaxially grown and incorporated in the active region of devices. The near pyramidal dots exhibit properties arising from the three-dimensional quantum confinement and from the coherent built-in strain. The properties and current state-of-the-art characteristics of quantum-dot junction lasers, intersublevel infrared detectors, optical amplifiers, and microcavity devices are briefly reviewed. It is evident that self-organized quantum-dot optoelectronic devices demonstrate properties that are sometimes unique and often surpass the characteristics of existing devices.     

Proposal for quantum-dot electroabsorption modulator

Quantum-dot, electroabsorption materials are proposed to obtain low internal loss, large absorption modulation, and negative alpha parameters (blue chirped pulses). These characteristics come from the discrete state absorption associated with three dimensional confinement in quantum dots compared to the band absorption of quantum well, quantum wire, and bulk materials. In addition, type II quantum-dot structures are also proposed to obtain the same optical modulation characteristics with the potential for greater immunity to saturation effects.     

Theory of semiconductor quantum-dot laser dynamics

A theory for describing nonequilibrium dynamics in a semiconductor quantum-dot laser is presented. This theory is applied to a microcavity laser with a gain region consisting of an inhomogeneous distribution of quantum dots, a quantum-well wetting layer, and injection pumped bulk regions. Numerical results are presented and the effects of spectral hole burning, plasma heating, and many-body effects are analyzed.     

Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots

The effect of the incorporation of an InGaAs quantum well into structures with InAs/GaAs quantum dots grown by gas-phase epitaxy on their optoelectronic properties is analyzed in the mode with increased growth-interruption time. It is established that the quantum-dot energy spectrum is weakly sensitive to variations in the thickness and composition of the double InGaAs/GaAs coating layer. The deposition of a quantum well onto a layer of quantum dots decreases the emission-barrier effective height in them. The conditions under which the quantum well can be used for protecting the quantum-dot active layer against penetration by defects generated during structure-surface anodic oxidation are determined.     

量子点光电子器件及其研究进展

作为未来新型光电子器件的有源区材料,采用能带工程形成的各种半导体量子点,以其所具有的许多独特光电特性而日益显示出潜在的重要应用。着重评述了量子点激光器、量子点红外光探测器和量子点单光子发射器件在近3至5年内取得的最新进展,并对存在的问题进行了分析和讨论。最后,提出了进一步改善器件性能的几种可能途径。     

Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots

The polarization anisotropy of electroluminescence and absorption in a ten-layer system of vertically correlated InAs quantum dots separated by 8.6-nm-thick GaAs spacer layers is investigated experimentally. The quantum-dot system is built into a two-section laser structure with sections of equal length. It is found that the polarization anisotropy in this system is smaller than the anisotropy in similar systems with a single layer of quantum dots or quantum-dot molecules, but larger than that in a quantum-dot superlattice. The spectra of differential absorption in the structure under study for different strengths of the applied electric field are also investigated. The rate of variation in the Stark shift as a function of the electric field is determined, the results giving evidence of controlled quantum coupling between adjacent quantum dots in tenlayer vertically correlated InAs/GaAs quantum-dot systems with 8.6- and 30-nm-thick GaAs spacer layers. The measured polarization dependences are explained by the participation of heavy-hole ground states in optical transitions. This effect is defined by the two dimensional nature of the system under study.     

Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation

It is demonstrated that the efficiency of surface plasmon-polariton excitation at a metal-semiconductor interface by active quantum dots can be determined from measurements of the polarization characteristics of the output radiation. Experimentally, the proposed diagnostic method is based on finding the ratio of the intensities of the output radiation with polarizations orthogonal and parallel to the nanoheterostructure plane for two different distances between the quantum-dot layer and the metal-semiconductor interface. These data are then used to obtain the unknown parameters in the proposed mathematical model which makes it possible to calculate the rate of surface plasmon-polariton excitation by active quantum dots. As a result, this rate can be determined without complicated expensive equipment for fast time-resolved measurements.

     

Growth of ternary InAlP and InGaP self-assembled quantum dots by metalorganic chemical vapor deposition

We report the characteristics of ternary InAlP and InGaP self-assembled quantum dots grown by metalorganic chemical vapor deposition. The structural and optical properties of these ternary quantum dots are compared with the characteristics of binary InP quantum dots grown under similar conditions. Because these ternary quantum dots have different bandgaps, strain, and composition compared to binary InP quantum dots, the ternary quantum-dot optical and physical properties are markedly different. The quantum-dot structures are grown uncapped (exposed QDs) and capped (embedded QDs) and characterized by atomic force microscopy (AFM) and photoluminescence (PL). InAlP quantum dots have higher densities and smaller sizes and InGaP quantum dots have smaller densities, as compared with InP quantum dots grown under similar conditions. Also, a random and broad size distribution is observed for InGaP quantum dots and the luminescence from InGaP dots is broader than for InP quantum dots.     

Self-assembled In0.5Ga0.5As quantum-dotlasers with doped active region

Self-assembled In_0.5Ga_0.5As quantum-dot lasers with different doping schemes in the active region are investigated. Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots as revealed by atomic force microscopy. Continuous-wave operation of Be-doped quantum-dot lasers has been achieved. Undoped In_0.5Ga_0.5 As quantum-dot lasers with a characteristic temperature as high as 125 K above room temperature have also been demonstrated     

Slow Light Based on Coherent Population Oscillation in Quantum Dots at Room Temperature

We develop a model for slow light based on the coherent population oscillation of quantum dots at room temperature. With the absorption dip and corresponding variation of the refractive index due to the coherent population beating induced by the pump and probe signal, quantum dots can be used as a slow-light medium. Our theoretical model matches the experimental results very well. We also experimentally and theoretically demonstrate that both the forward-bias injection current and reverse-bias voltage can change the group index in a semiconductor quantum-dot waveguide. Our results indicate that quantum-dot devices can be potentially used as electrically and optically controllable slow light devices     

基于DMD的外腔量子点激光器性能研究

为了取得更加完善的外腔量子点激光器(QDL)测试 数据,构建了基于数字微镜器件(DMD,digital micro-mirror device)的InAs/InP量子 点外腔QDL。测量了其 光谱特性以及调谐范围,得到了基于DMD的外腔QDL调谐范围和相应的模式变 化。在理论和实验上与基于光栅的外腔QDL性能进行了比较,得到了在角色 散和反射光谱中与光栅的区别,实现了将DMD应用于外腔QDL中而获得的一种 新方法。     

Modulation of a quantum well potential by a quantum-dot array

The possibility of locally varying the potential energy of the electrons and holes localized in a quantum well by a quantum-dot array deposited in the immediate vicinity of the quantum well is demonstrated. These changes in the potential energy are induced when a strain arises in the quantum-dot region. Fiz. Tekh. Poluprovodn. 31, 109–113 (January 1997)     

Photoluminescence properties of cadmium-selenide quantum dots embedded in a liquid-crystal polymer matrix

The photoluminescence properties of cadmium-selenide (CdSe) quantum dots with an average size of ～3 nm, embedded in a liquid-crystal polymer matrix are studied. It was found that an increase in the quantum-dot concentration results in modification of the intrinsic (exciton) photoluminescence spectrum in the range 500–600 nm and a nonmonotonic change in its intensity. Time-resolved measurements show the biexponential decay of the photoluminescence intensity with various ratios of fast and slow components depending on the quantum-dot concentration. In this case, the characteristic lifetimes of exciton photoluminescence are 5–10 and 35–50 ns for the fast and slow components, respectively, which is much shorter than the times for colloidal CdSe quantum dots of the same size. The observed features of the photoluminescence spectra and kinetics are explained by the effects of light reabsorption, energy transfer from quantum dots to the liquid-crystal polymer matrix, and the effect of the electronic states at the CdSe/(liquid crystal) interface.     

In<Subscript>0.8</Subscript>Ga<Subscript>0.2</Subscript>As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties

The growth peculiarities of In_0.8Ga_0.2As quantum dots and their arrays on GaAs surface by metalorganic vapor-phase epitaxy are investigated. The bimodal size distribution of In_0.8Ga_0.2As quantum dots is established from the photoluminescence spectra recorded at different temperatures. The growth parameters were determined at which the stacking of 20 In_0.8Ga_0.2As quantum-dot layers in the active area of a GaAs solar cell makes it possible to enhance the photogenerated current by 0.97 and 0.77 mA/cm² for space and terrestrial solar spectra, respectively, with the high quality of the p–n junction retained. The photogenerated current in a solar cell with quantum dots is higher than in the reference GaAs structure by ~1% with regard to nonradiative-recombination loss originating from stresses induced by the quantum-dot array.     

Reliability and Defect Tolerance in Metallic Quantum-dot Cellular Automata

The computational paradigm known as quantum-dot cellular automata (QCA) encodes binary information in the charge configuration of Coulomb-coupled quantum-dot cells. Functioning QCA devices made of metal-dot cells have been fabricated and measured. We focus here on the issue of robustness in the presence of disorder and thermal fluctuations. We examine the performance of a semi-infinite QCA shift register as a function of both clock period and temperature. The existence of power gain in QCA cells acts to restore signal levels even in situations where high speed operation and high temperature operation threaten signal stability. Random variations in capacitance values can also be tolerated.