宽带偏振不灵敏InGaAs半导体光放大器

采用压应变InGaAs量子阱和张应变InGaAs准体材料交替混合的有源结构，研制了宽带偏振不灵敏的半导体光放大器．此放大器在100～250mA的工作电流范围内，获得了大于70nm的3dB光带宽；在0～250mA工作电流和3dB光带宽波长范围内，偏振灵敏度小于1dB．对于1.55μm的信号光，在200mA的注入电流下获得了15.6dB的光纤到光纤的增益、小于0.7dB的偏振灵敏度和4.2dBm的饱和输出功率．     

宽带偏振不灵敏InGaAs半导体光放大器

采用压应变InGaAs量子阱和张应变InGaAs准体材料交替混合的有源结构,研制了宽带偏振不灵敏的半导体光放大器.此放大器在100～250mA的工作电流范围内,获得了大于70nm的3dB光带宽;在0～250mA工作电流和3dB光带宽波长范围内,偏振灵敏度小于1dB.对于1.55μm的信号光,在200mA的注入电流下获得了15.6dB的光纤到光纤的增益、小于0.7dB的偏振灵敏度和4.2dBm的饱和输出功率.     

宽带偏振不灵敏张应变InGaAs半导体放大器光开关

研制了一种张应变准体InGaAs半导体放大器光开关.该结构具有显著的带填充效应,从而导致在80mA的注入电流下,器件的3dB光带宽大于85nm(1520～1609nm).该带宽几乎同时全部覆盖了C带(1525～1565nm)和L带(1570～1610nm).最为重要的是,在3dB光带范围内,光开关的偏振灵敏度小于0.7dB;光纤到光纤无损工作电流在70～90mA之间;消光比大于50dB.通过降低了载流子寿命,开关速度有所提高.在未来密集波分复用通信系统中,这种宽带偏振不灵敏半导体放大器光开关很有实用前景.     

1550 nm偏振不灵敏半导体光放大器的研制

研制了有源区为InGaAs张应变体材料的1.55 μm偏振不灵敏半导体光放大器(SOA).采用束传播法计算了偏离镜面垂直方向7.的埋层波导结构模式场分布,并用平面波展开法设计了多层抗反射膜,在TE模和TM模反射率同时小于10-4时膜厚允许误差为3%.对放大自发发射谱(ASE)和增益谱的分析表明,他们具有基本一致的偏振灵敏度.对一腔长800 μm的SOA在注入电流250 mA时,测量得出TE模和TM模的ASE谱偏振灵敏度小于0.5 dB,增益谱3 dB带宽为63 nm,1 550 nm处光纤到光纤增益为11.9 dB,3 dB饱和输出功率为5.6 dB,在1 570 nm处的噪声指数为7.8 dB.而一腔长1 000μm SOA耦合封装后得到的最大增益为15 dB.     

低偏振灵敏度半导体光放大器

报道了基于混合应变量子阱材料的半导体光放大器 (SOA)。利用张应变量子阱加强了TM模的增益 ,使之接近TE模的增益 ,从而使SOA的偏振灵敏度大为降低。在 150mA的偏置下 ,获得了 2 4dB的小信号增益和 1dB的偏振灵敏度。     

AlGaInAs-InP材料系1550nm偏振无关半导体光放大器

采用低压金属有机气相外延设备生长并制作了1550nm AlGaInAs-InP偏振无关半导体光放大器,有源区为3周期的张应变量子阱结构,应变量为-0.40%.器件制作成脊型波导结构,并采用7°斜腔结构以有效抑制腔面反射.经蒸镀减反膜后,半导体光放大器的自发辐射功率的波动小于0.3dB,3dB带宽为56nm.半导体光放大器小信号增益近20dB,带宽大于55nm.在1500～1590nm波长范围内偏振灵敏度小于0.8dB,峰值增益波长的饱和输出功率达7.2dBm.     

渐变应变偏振不灵敏半导体光学放大器

采用渐变应变有源区结构,制备出偏振不灵敏半导体光学放大器,工作电流在60～160mA范围内,其3dB带宽范围不小于35nm,偏振不灵敏度小于0.35dB,自发发射出光功率为0.18～3.9mW.     

渐变应变偏振不灵敏半导体光学放大器

采用渐变应变有源区结构,制备出偏振不灵敏半导体光学放大器,工作电流在60～160mA范围内,其3dB带宽范围不小于35nm,偏振不灵敏度小于0.35dB,自发发射出光功率为0.18～3.9mW.     

基于两只半导体光放大器级联结构的多波长光纤激光器

通过数值模拟对两只半导体光放大器(SOA)级联结构的静态增益饱和特性进行了理论研究.在不考虑自发辐射的情况下,分析了注入电流对两只SOA级联结构增益的影响.实验上构建了一种基于两只SOA级联结构的多波长光纤激光器,观测并分析了半导体光放大器的驱动电流和增益带宽对多波长输出结果的影响.在室温下,获得了基本符合ITU-T标准100 GHz的27个波长以上的稳定多波长输出,各信道输出功率不平坦度小于±3 dB,线宽小于0.102 nm,信噪比大于25 dB,总输出功率为1.94 mW,并且与由单只SOA构成的多波长光纤激光器进行了对比.     

半导体光放大器的增益透明电流测量方法研究

半导体光放大器(SOA)作为全光集成器件的核心,在全光通信和光纤传感等领域中具有重要的应用前景。值得关注的是,半导体光放大器的材料增益透明决定了它的快慢光过渡点和信号增益的起始点,因此准确测量其材料增益透明对应的注入电流,对于SOA的全面应用具有重要意义。提出了一种测量SOA材料增益透明电流的方法,并深入分析了其特点。依据材料增益透明时SOA的输出功率与入射光偏振无关的特性,实验测量了不同输入光功率条件下,入射光偏振态对输出功率影响最小时,SOA的注入电流。利用上述方法,准确地测量出给定波长输入待测SOA的增益透明电流为155mA。该方法为实现其他类型任意波长注入时SOA增益透明电流的测量提供了参考,为其全面应用奠定了基础。     

Spot-size converter integrated polarization insensitivesemiconductor optical amplifiers

Spot-size converter integrated polarization-insensitive semiconductor optical amplifier (SSC-SOA) with angled window has been designed and fabricated using both selective area growth and successive lateral tapering. A narrow beam divergence of 80×15°, 0.2-dB amplified-spontaneous-emission ripple, and 1.5-dB polarization sensitivity within the 3-dB optical bandwidth were obtained at 29.7-dB chip gain. The fiber-to-fiber gain of the SOA module was measured to be 22 dB at 200 mA, i.e., the coupling loss was below 4 dB per each facet     

Fabrication and characterization of 1 550 nm polarization-insensitive semiconductor optical amplifiers

Semiconductor Optical Amplifiers (SOAs) can beused asin-line amplifier ,preamplifier ,optical switch,andwavelength converter in future optical systems[1-3].Po-larization-independent gain,high output power and lowgain ripple are desirable features for most…     

适于InGaAsP光放大器偏振不灵敏的增益介质

研制了适于InGaAsP光放大器偏振不灵敏的增益介质 ,采用有源区内交替的张应变和压应变排列的混合应变量子阱结构 ,器件做成带有倾角的扇形。实验中发现该结构既抑制了激射又改善了器件的偏振灵敏性 ,实现了偏振灵敏度小于 0 5dB ,10 0mA偏置时可达 0 1dB。在较大的电流范围内 ,峰的半高全宽 (FWHM)为 4 0nm。     

Wide-band polarization-independent tensile-strained InGaAs MQW-SOAgate

A high-performance tensile-strained InGaAs multi-quantum-well semiconductor optical amplifier (MQW-SOA) gate developed for wavelength-division-multiplexing (WDM) applications is reported. The -0.47% InGaAs-strained SOA gate has a very low polarization dependence of 0.3 dB over a driving current between 30 and 60 mA and a wide-input signal wavelength range from 1530 to 1580 nm. The fabrication tolerance of the mesa stripe width is very large, ranging from 1.0 to 1.75 μm. The MQW-SOA gate has an extinction ratio of more than 40 dB. The fiber-to-fiber lossless operation current is less than 50 mA over the fiber-amplifier gain band. The gating speed is less than 1 ns     

一种大功率低偏振度量子阱超辐射发光二极管

设计了一种张应变与压应变相结合的混合应变量子阱结构超辐射发光二极管,研究了TE模和TM模在器件中的模式增益,分析了影响增益偏振性的因素,在此基础上通过改变有源层量子阱的应变类型、应变量以及层数来达到高增益和偏振不敏感性。最后按设计工艺流程生长了芯片,实验结果表明,所设计的SLD芯片单管输出功率在100mA驱动电流下可达3.5mW,出射光谱FWHM约为40nm,20nm波长范围内偏振度为0.3dB,具有较理想的大功率、宽光谱、低偏振度特性。     

Polarization-insensitive SOA with a strained bulk active layer fornetwork device application

Current and wavelength characteristics for 1.55-μm semiconductor optical amplifiers (SOAs) containing bulk active layers with various tensile strains were investigated. The strain dependence of the gain-difference between the TE-mode and TM-mode (ΔG_TE-TM ) was almost linear having a waveguide-width over 0.8-1.5 μm. A -0.12% tensile-strained bulk SOA had very low ΔG_TE-TM of less than 0.8 dB for driving current ranging from 0 to 120 mA. The low-polarization-sensitive condition of SOAs with strained-bulk active layers was shown to yield very wide range in driving current and wavelength for network device applications     

Noise figure improvement in semiconductor optical amplifiers by holding beam at transparency scheme

We have studied the noise properties of a semiconductor optical amplifier (SOA) under the injection of a pump laser. The laser wavelength is set within the transparency region of SOA. The noise figure (NF) is found to decrease, strongly depending on the relative injection direction of signal and pump (i.e., copropagating or counterpropagating beams). In the copropagating scheme, an improvement in NF is obtained, ranging from 2.5 dB in the low current regime (40 mA, 13-dB chip gain) to 0.5 dB at high currents (150 mA, 23-dB chip gain). In the counterpropagating scheme, NF improvement is less pronounced. We explain the effect by an advantageous carrier redistribution along the SOA under the presence of the pump beam at transparency. A detailed simulation reproduces the observed results.     

基于渐变组分体材料InGaAs的宽带长波长超辐射二极管

研制了一种新型的非选择性再生长掩埋异质结构长波长超辐射二极管(SLD).该器件采用渐变组分体材料InGaAs作为有源区,由金属有机物化学气相外延制备.150mA下,SLD发射谱宽的半高全宽为72nm,覆盖范围从1602到1674nm.发射谱光滑、平坦,光谱波纹在1550到1700nm的范围内小于0.3dB.室温连续工作,注入电流200mA下,器件获得了4.3mW的出光功率.器件适用于气体探测器和L-band光纤通信的光源.