低温直流磁控溅射制备ITO薄膜工艺研究

采用低温直流磁控溅射法针对附有有机聚合物玻璃磁控镀制ITO薄膜,通过四探针、紫外可见分光亮度计对样品进行表征,研究了基底温度、溅射功率对ITO薄膜光电性能影响,试验表明:在附有有机聚合物的玻璃上低温直流磁控溅射法制备ITO薄膜,随着基底温度的增加方块电阻先下降后增加,透过率先增加后略微减少;随着溅射功率的增加,薄膜方块电阻减少,透过率降低。     

ITO薄膜的制备以及性能的研究

在室温条件下通过直流磁控溅射法在普通玻璃基体上制备了光电性能优良的ITO薄膜。靶材为ITO陶瓷靶,其中In2O3与SnO2的质量比为9∶1。运用UV-2550紫外可见光光度计测量样品的透光率,采用SZT-2四探针测试仪测量样品表面的电阻率,用扫描电镜(SEM)对样品进行表征。研究了溅射压强、溅射功率等参数对薄膜光电性能的影响。研究表明,ITO薄膜的电阻率随着溅射功率的增大而减小,在溅射功率为110W时ITO薄膜的透光率有相对好的数值。溅射压强为1.0Pa时既能保持ITO薄膜低的电阻率又能保证高的透光率。     

柔性聚酰亚胺(PI)衬底上ITO薄膜的生长及其透明导电性能影响机制研究

采用直流磁控溅射法在聚酰亚胺(PI)柔性衬底上生长氧化铟锡(ITO)薄膜,采用XP-2探针台阶仪、X射线衍射(XRD)、霍尔测试仪、紫外-可见分光光度计等对ITO薄膜进行结构和光电性能表征.结果表明溅射功率和沉积气压是影响磁控溅射法生长ITO薄膜透明导电性能的主要因素,实验系统研究了溅射功率和沉积气压对ITO薄膜透明导...     

磁控溅射制备ITO薄膜光电性能的研究

采用直流磁控溅射方法在玻璃基底上制备了ITO薄膜.分别用分光光度计和四探针仪测试了所制备ITO薄膜在可见光区域内的透过率和电阻率,研究了溅射气压、氧氩流量比和溅射功率三个工艺参数对ITO薄膜光电性能的影响.研究结果表明,制备ITO薄膜的最佳工艺参数为:溅射气压0.6 Pa,氧氩流量比1:40,溅射功率108 W.采用此工艺参数制备的ITO薄膜在可见光区平均透过率为81.18％,薄膜电阻率为8.9197×10-3Ω·cm.     

倾斜磁控溅射制备低阻高透ITO薄膜及其光电特性

利用直流磁控溅射方法,在Ar和O_2的混合气氛中,采用陶瓷靶制备ITO薄膜;采用紫外-可见-红外分光光度计和四探针法研究了溅射工艺参数对ITO薄膜的光电特性的影响。实验结果表明,当靶材角度在23-25°、O_2流量在7-9sccm、溅射时间在60-90 min和溅射功率在100-120W时获得可见光透过率高于90%,方阻在10-20Ω/□之间的优质ITO薄膜。     

溅射功率和氧分压对ITO薄膜光电性能的影响研究

采用直流反应磁控溅射法制备了氧化铟锡(ITO)透明导电薄膜,通过四探针、紫外可见分光光度计、X射线衍射(XRD)、霍尔效应仪、扫描电镜(SEM)等对薄膜样品进行了表征,研究了溅射功率和氧分压对ITO薄膜微观结构和光电性能的影响,结果表明:溅射功率对ITO的光电性能影响较小,沉积速率随着溅射功率的增大而加快;随着氧分压的升高,载流子浓度降低,霍尔迁移率先增大后减小,电阻率逐渐增大。在优化的工艺条件下,制备了在可见光区平均透过率达85%、电阻率为1×10-4Ω.cm的光电性能优良的ITO薄膜。     

磁控溅射低温沉积ITO薄膜及其光电特性研究

采用直流反应磁控溅射法低温沉积ITO薄膜,用XRD、SEM和UV—Vis分别表征ITO薄膜的晶体结构、表面形貌及其紫外-可见光吸收谱,研究了氧分压、溅射功率及薄膜厚度等工艺参数对薄膜光电性能的影响,结果表明,氧分压过大时,ITO薄膜中有大量的位错和缺陷,使薄膜的电阻率变大,导电性变差;氧分压过小时,薄膜中将有大量氧空位产生,导致晶格变形,使电阻率增加。随着溅射功率增大,在相同时间内薄膜厚度增加,方块电阻减小,薄膜电阻率降低。随着薄膜厚度增加,制备的薄膜晶体结构相对完整,载流子浓度和迁移率逐渐增大,薄膜电阻率变小,进而对样品的光电性能产生明显影响。     

柔性衬底ITO薄膜的制备及其光电性能研究

在室温下,采用直流反应磁控溅射法,在聚酯薄膜（PEP）衬底上镀制了高性能的ITO薄膜。为了提高薄膜与基底的结合力,溅射前采用多弧离子源对PEP表面进行了等离子体清洗。研究了溅射工艺参数对ITO薄膜的光电性能和红外发射率的影响规律,探讨了ITO膜的透光和导电机理,并分析了方块电阻与红外发射率的相互关系。实验结果表明,通过等离子体清洗,ITO薄膜的结合力和光电性能都得到了改善。ITO薄膜的红外发射率和方块电阻受制备条件的影响规律具有相似之处,红外发射率随薄膜方块电阻的增大而呈增加的趋势。     

工艺参数对磁控溅射TaOx薄膜离子导体性能的影响

采用射频反应磁控溅射工艺,以纯钽为靶材,在WO3/ITO/Glass基材上制备TaOx薄膜,研究氧含量、溅射功率等制备工艺参数对TaOx薄膜性能的影响.用三位电极法和透射光谱等方法检测薄膜的离子导电性能,结果表明:所得的TaOx薄膜主要为非晶态,在一定范围内,在较低的溅射功率和较低的氧含量实验条件下制备的TaOx薄膜具有较好的离子导电性能.     

室温直流磁控溅射制备ITO膜及光电性能研究

室温条件下,在玻璃衬底上,采用直流磁控溅射法制备了ITO膜.研究了溅射压强,氧流量和溅射功率等工艺参数对薄膜光电性能的影响.结果表明当Ar流量为44.2 sccm和溅射时间20 min等参数不变时,溅射气压0.7 Pa,氧流量0.62 sccm和溅射功率130 W为最佳工艺条件.并得到了电阻率5.02×10-4 Ω·cm,在可见光区平均透过率80%以上ITO薄膜.     

Growth of ITO thin films by magnetron sputtering: OES study,opticaland electrical properties

In this work tin doped indium oxide (ITO) thin films were deposited onto soda lime glass substrates by the direct current magnetron sputtering system analyzing process of deposition with optical emission spectroscopy (OES). The dependence of electro-optical characteristics of the deposited films on the sputtering pressure, O₂/Ar working gas flow ratio and the discharge power was investigated. Transparency of the ITO films was measured using the ultraviolet and visible light spectrometer (UV–vis). The X-Ray photoelectron spectroscopy (XPS) method was applied for analysis of thin films surface chemical composition. It was found that in-situ measurement of plasma emission spectra allowed prediction and control of parameters of ITO thin films, namely resistivity and transparency. The correlation between the thin films resistivity, optical transparency and kinetics of deposition was examined.     

Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target

Indium tin oxide (ITO) thin films were deposited on quartz substrates by radio frequency (RF) sputtering with different RF power (100–250 W) using the powder target at room temperature. The effect of sputtering power on their structural, electrical and optical properties was systematically investigated. The intensity of (400) orientation clearly increases with the sputtering power increases, although the films have (222) preferred orientation. Increasing sputtering power is benefit for lower resistivity and transmittance. The films were annealed at different temperature (500–800 °C), then we explored the relationship between their electro-optical and structural properties and temperature. It has been observed that the annealed films tend to have (400) orientation and then show the lower resistivity and transmittance. The ITO thin film prepared by RF sputtering using powder target at 700 °C annealing temperature and 200 W sputtering power has the resistivity of 2.08 × 10^?4 Ω cm and the transmittance of 83.2 %, which specializes for the transparent conductive layers.     

Growth and characterization of indium tin oxide thin films deposited on PET substrates

Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 × 10^− 3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters.     

ITO Films Prepared by Long-throw Magnetron Sputtering without Oxygen Partial Pressure

This study has investigated the influence of the radio frequency (rf) power and working pressure on the properties of indium tin oxide (ITO) thin films, which were prepared by long-throw rf magnetron sputtering technique at room temperature. For 200 nm thick ITO films grown at room temperature in pure argon pressure of 0.27 Pa and sputtering power of 40 W, sheet resistance was 26.6 ?/sq. and transmittance was higher than 88% (at wavelength 500 nm). An X-ray diffraction analysis of the samples deposited at r...     

Improved ITO thin films with a thin ZnO buffer layer by sputtering

In this paper, we report a buffering method of improving the quality of ITO thin films on glass by r.f. magnetron sputtering. By applying a ZnO buffer before the ITO deposition in the same run of sputtering, ITO films showed single (111)-oriented highly textured structure, while ITO films showed mixed-oriented polycrystalline structure on bare glass. A design of experiment was taken out to minimize the resistivity of ITO films in the deposition parameter space (oxygen ratio, total gas pressure, and temperature). Resistance measurements showed that the ITO films with ZnO buffers had a remarkable 50% decrease of resistivity comparing to those without ZnO buffers at optimized deposition condition. Room-temperature Hall effect measurements showed that the decrease in resistivity comes from a large increase of mobility and a slight increase of carrier density after forming gas annealing. The ZnO/glass may be a good alternative substrate to bare glass for producing high quality ITO films for advanced electro-optic applications.     

直流反应溅射TiO2薄膜的制备及其性能研究

采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜.用XRD、Raman光谱、AFM和紫外-可见光分光光度计分别测试了TiO2薄膜的结构、表面形貌和紫外-可见光透射谱,研究了工艺因素中溅射气压、氧氩比和退火温度对薄膜结构的影响.采用C(胶)/TiO2/ITO三层结构研究了锐钛矿TiO2薄膜的紫外光响应.实验结果表明较低的溅射气压、合适的氧氩比和较高的退火温度有利于锐钛矿TiO2薄膜的结晶.在2 V的偏压下,锐钛矿TiO2薄膜的紫外光响应上升迟豫时间约为3 s,稳定光电流可达到2.1 mA,对紫外光的灵敏性和稳定的光响应表明TiO2薄膜有可能成为一种新的紫外光探测器材料.