Effects of composition on optical and electrical properties of amorphous In-Ga-Zn-O films deposited using radio-frequency sputtering with varying O2 gas flows

This study used powders containing various In₂O₃-Ga₂O₃-ZnO (IGZO) chemical compositions to manufacture targets by using a metallurgical process. The resulting targets were used to deposit amorphous In-Ga-Zn-O (a-IGZO) channel films using a radio frequency (r.f.) magnetron sputtering process. The average transmittance increased and achieved saturation; the resistivity increased in conjunction with the O₂ flow ratio of less than 6%; and subsequently, the resistivity decreased with increasing the O₂ flow ratio larger than 6%. This study examined the effects of compositions on electrical characteristics and optical properties of a-IGZO films at varied O₂ flow rates. The effects of composition on optical and electrical characteristics of a-IGZO films indicate that the average transmittance of a-IGZO films with more zinc atoms (approximately 50%) had more than 80% at various O₂ flow ratios because of the higher oxygen absorption of the zinc atoms. However, the average transmittance of a-IGZO film with a lower zinc atomic ratio (approximately 20%) without an O₂ flow ratio decreased to below 10% because of the indium and indium oxide crystalline precipitation in the indium-rich a-IGZO films. The results revealed that the resistivity increased when the gallium atomic ratio increased and the indium atomic ratio decreased.     

Structural characterization of sputtered indium oxide films deposited at room temperature

Structural evolution of indium oxide thin films deposited at room temperature by reactive magnetron sputtering and annealing in a reducing atmosphere were investigated. The as deposited indium oxide (In₂O₃) films showed a dominating randomly oriented nanocrystalline structure of cubic In₂O₃. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films. Annealing improved the optical properties of the indium oxide film and shifted the absorption edge to higher energies.     

Advantages of transparent conducting oxide thin films with controlled permittivity for thin film photovoltaic solar cells

Our recent investigations have identified a pathway to produce transparent conducting oxide (TCO) films that demonstrate higher infrared transparency. The technique involves controlling the dielectric permittivity of the TCO film such that the electrical properties are maintained, but the plasma frequency (ω_p) is shifted to longer wavelength. This has the effect of reducing free-carrier absorption in the visible and near-infrared spectral region, thus producing a TCO film with higher optical transmission. The technique has been demonstrated for sputtered films of indium tin oxide by adding small amounts of ZrO₂ to a ceramic sputtering target, and for SnO₂:F films deposited by chemical vapor deposition using a metalorganic Zr source.     

Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition

Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.     

Characterization of ZnO-In2O3 transparent conducting films by pulsed laser deposition

Transparent conducting oxide (TCO) films in the ZnO-In₂O₃ system were prepared by a pulsed laser deposition method. A target that consists of the mixture of ZnO and In₂O₃ powders was used. Influences of the target composition x (x = [Zn]/([Zn] + [In])) and heater temperature on structural, electrical and optical properties of the TCO films were examined. Introduction of oxygen gas into the chamber during the deposition was necessary for improvement in the transparency of the deposited films. The amorphous phase was observed for a wide range of x = 0.20-0.60 at 110 °C. Minimum resistivity was 2.65 × 10⁻⁴ Ω cm at x = 0.20. The films that showed the minimum resistivity had an amorphous structure and the composition shifted toward larger x, as the substrate temperature increased. The films were enriched in indium compared to the target composition and the cationic In/Zn ratio increased as the substrate temperature was increased.     

Plasma exposure inducing crystallization of indium oxide film with improved electrical and mechanical properties at room temperature

A novel plasma exposure technique has been introduced into conventional magnetron sputtering process to enhance the crystallization of indium oxide (In₂O₃) films at room temperature. The effect of plasma exposure technique with different pulsed DC voltages on the electrical and mechanical properties of In₂O₃ films was investigated. It is observed that film crystallization can be significantly enhanced when the pulsed DC voltage (|V _p|) is higher than |?500 V| (|V _p| > |?500 V|). By applying the plasma exposure process, In₂O₃ films prepared at room temperature with thickness of 135 nm shows low resistivity of 4.11 × 10^?4 Ω cm, mobility of 42.1 cm²/Vs, and transmittance over 80 % in the visible range. Compared with the In₂O₃ films without plasma exposure process, the In₂O₃ films with plasma exposure show better crystallization and remarkably higher nanohardness. The plasma exposure technique is a useful candidate technique for enhancing film crystallization at low temperature.     

Low indium content In–Zn–O system towards transparent conductive films: structure,properties and comparison with AZO and GZO

In this work, low content indium doped zinc oxide (IZO) thin films were deposited on glass substrates by RF magnetron sputtering using IZO ceramic targets with the In₂O₃ doping content of 2, 6, and 10 wt%, respectively. The influences of In₂O₃ doping content and substrate temperature on the structure and morphology, electrical and optical properties, and environmental stability of IZO thin films were investigated. It was found that the 6 wt% doped IZO thin film deposited at 150?°C exhibited the best crystal quality and the lowest resistivity of 9.87?×?10^?4 Ω cm. The corresponding Hall mobility and carrier densities were 9.20 cm² V^?1 s^?1 and 6.90?×?10²⁰ cm^?3, respectively. Compared with 2 wt% Al₂O₃ doped ZnO and 5 wt% Ga₂O₃ doped ZnO thin films, IZO thin film with the In₂O₃ doping content of 6 wt% featured the lowest surface roughness of 1.3 nm. It also showed the smallest degradation with the sheet resistance increased only about 4.4% at a temperature of 121?°C, a relative humidity of 97% for 30 h. IZO thin film with 6 wt% In₂O₃ doping also showed the smallest deterioration with the sheet resistance increased only about 2.8 times after heating at 500?°C for 30 min in air. The results suggested that low indium content doped ZnO thin films might meet practical requirement in environmental stability needed optoelectronic devices.     

Characterization of transparent conducting oxide thin films deposited on ceramic substrates

In this work, we investigate the optical and electrical properties of various transparent conductive oxide (TCO) thin films deposited on insulating ceramics for emerging optoelectronic applications. Thin films investigated include indium tin oxide (ITO), ruthenium oxide (RuO₂), and iridium oxide (IrO₂) on Al₂O₃ ceramic substrates. The conducting films have been deposited by various techniques including RF magnetron sputtering and low-cost spray pyrolysis. The morphological characteristics of the films were carried out using high magnification optical microscopy and atomic force microscopy (AFM). Optical and electrical characterization was carried out by optical absorbance/transmittance, van der Pauw, current-voltage (I-V), and Hall effect measurements. The results are presented in this paper.     

Properties of transparent conducting oxides formed from CdO alloyed with In2O3

The structure, optical and electrical properties of transparent conducting oxide films depend greatly on the methods of preparation, heat treatment, type and level of dopant. Thin films of (CdO)_1−x(In₂O₃)_x have been grown by electron beam evaporation technique for different concentrations of In₂O₃ (x = 0, 0.05, 0.1, 0.15 and 0.2). Increase of doping led to increased carrier concentration as derived from optical data and hence to increased electrical conductivity, which degraded the transparency of the films. An improvement of the electrical and optical properties of Cadmium indium oxide (CdIn₂O₄) has been achieved by post-deposition annealing. A resistivity value of 7 × 10^− 5 Ω cm and transmittance of 92% in the near infrared region and 82% in the visible region have been obtained after annealing at 300 °C for 90 min in air.     

Growth and characterization of transparent conducting nanostructured zinc indium oxide thin films

Transparent conductive oxide (TCO) films have been widely used in various applications, such as for transparent electrodes in flat-panel displays, and in solar cells, optoelectronic devices, touch panels and IR reflectors. Among these, tin doped zinc oxide (ZTO) and indium doped zinc oxide (ZIO) have attracted considerable attention. Particularly, IZO thin film is the best candidate for high-quality transparent conducting electrodes in OLEDs and flexible displays. In this work zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In₂O₃ — 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the physical properties. The XRF spectra revealed the presence of zinc and indium with varying concentration in ZIO thin films, while the surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. The core level spectra were deconvoluted to see the effect of chemical changes, while the valance band spectra manifest the electronic transitions. The surface morphology studies of the films using atomic force microscopy (AFM) revealed the formation of nanostructured ZIO thin films. The optical band gap was also found to be decreased for both types of films with increasing concentration of In₂O₃.     

Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells

Hydrogen-doped In₂O₃ (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon (μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In₂O₃, improved the short-circuit current density (J_sc) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J_sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.     

Effect of vacuum annealing on the phase composition of In/SnO/Si, In/SnO2/Si, and Sn/In2O3/Si heterostructures

The chemical interaction between indium and thin SnO and SnO₂ films and between tin and thin In₂O₃ films during vacuum annealing was studied. The metallic films were deposited onto single-crystal silicon substrates by magnetron sputtering, the SnO and SnO₂ films were produced by heat-treating the Sn film in flowing oxygen at 673 and 873 K, respectively, and the In₂O₃ film was produced by heat-treating the In film at 573 K. The results indicate that annealing of the In/SnO/Si and In/SnO₂/Si heterostructures in vacuum (residual pressure of 0.33 × 10^?2 Pa) at 773 K gives rise to the reduction of Sn and oxidation of In, whereas annealing of Sn/In₂O₃/Si causes partial tin substitution for indium in the cubic indium oxide lattice.     

Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering

This study probes the effect of annealing temperature on electrical, optical and microstructural properties of indium tin oxide (ITO) films deposited onto soda lime glass substrates by conventional direct current (DC) magnetron reactive sputtering technique at 100 watt using an ITO ceramic target (In₂O₃:SnO₂, 90:10 wt%) in argon atmosphere at room temperature. The films obtained are exposed to the calcination process at different temperature up to 700 °C. X–ray diffractometer (XRD), ultra violet-visible spectrometer (UV–vis) and atomic force microscopy (AFM) measurements are performed to characterize the samples. Moreover, phase purity, surface morphology, optical and photocatalytic properties of the films are compared with each other. The results obtained show that all the properties depend strongly on the annealing temperature. XRD results indicate that all the samples produced contain the In₂O₃ phase only and exhibit the polycrystalline and cubic bixbite structure with more intensity of diffraction lines with increasing the annealing temperature until 400 °C; in fact the strongest intensity of (222) peak is obtained for the sample annealed at 400 °C, meaning that the sample has the greatest ratio I ₂₂₂/I ₄₀₀ and the maximum grain size (54 nm). As for the AFM results, the sample prepared at 400 °C has the best microstructure with the lower surface roughness. Additionally, the transmittance measurements illustrate that the amplitude of interference oscillation is in the range from 78 (for the film annealed at 400 °C) to 93 % (for the film annealed at 100 °C). The refractive index, packing density, porosity and optical band gap of the ITO thin films are also evaluated from the transmittance spectra. According to the results, the film annealed at 400 °C obtains the better optical properties due to the high refractive index while the film produced at 100 °C exhibits much better photoactivity than the other films as a result of the large optical energy band gap.     

Detection of H2S gas at lower operating temperature using sprayed nanostructured In2O3 thin films

Nanostructured indium oxide (In₂O₃) thin films were prepared by spray pyrolysis (SP) technique. X-ray diffraction (XRD) was used to investigate the structural properties and field emission scanning electron microscopy (FESEM) was used to confirm surface morphology of In₂O₃ films. Measurement of electrical conductivity and gas sensing performance were conducted using static gas sensing system. Gas sensing performance was studied at different operating temperature in the range of 25–150 °C for the gas concentration of 500 ppm. The maximum sensitivity (S = 79%) to H ₂ S was found at lower temperature of 50 °C. The quick response (4 s) and fast recovery (8 s) are the main features of this film.     

Indium selenide microrod films: chemical bath deposition from acidic bath

Films of indium selenide was deposited onto glass and indium tin oxide coated glass substrates in acidic medium using chemical bath deposition at room temperature. Indium sulphate and sodium selenosulphate were used as precursors of In³⁺ and Se^2?, respectively. The structural, surface morphological and optical properties of the deposited films were studied. Diffractograms in structural study revealed the deposited material is In₂Se₃ films. Controlled bath conditions resulted in the evolution of the In₂Se₃ microrod-like morphology. The optical band gap of the film was found to be 1.7 eV.     

Indium sulfide buffer layers deposited by dry and wet methods

Indium sulfide (In₂S₃) thin films have been deposited on amorphous glass, glass coated by tin oxide (TCO) and crystalline silicon substrates by two different methods: modulated flux deposition (MFD) and chemical bath deposition (CBD). Composition, morphology and optical characterization have been carried out with Scanning Electron Microscopy (SEM), IR-visible-UV Spectrophotometry, X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectrometer. Different properties of the films have been obtained depending on the preparation techniques. With MFD, In₂S₃ films present more compact and homogeneous surface than with CBD. Films deposited by CBD present also indium oxide in their composition and higher absorption edge values when deposited on glass.     

Tuning of electrical properties of InxOy thin films grown by MOCVD for different applications

Tuning of electrical properties of indium oxide (In₂O₃) films by means of metal organic chemical vapor deposition (MOCVD) is demonstrated. Body‐centered cubic In₂O₃ polycrystalline thin films on Al₂O₃(0001) substrates were obtained. The specific resistance of the as‐grown films can be tuned by about two orders of magnitude by varying the growth conditions.     

Structural,optical and magnetic properties of Cr doped In<Subscript>2</Subscript>O<Subscript>3</Subscript> powders and thin films

The (In_1?xCr_x)₂O₃ powders as well as thin films of x = 0.03, 0.05 and 0.07 were synthesized using a solid state reaction and an electron beam evaporation technique (on glass substrate), respectively. The influence of Cr doping concentration on structural, optical and magnetic properties of the In₂O₃ samples was systematically studied. The X-ray diffraction results confirmed that all the Cr doped In₂O₃ samples exist cubic structure of In₂O₃ without any secondary phases presence. The chemical composition analyses showed that all the Cr doped In₂O₃ compounds were nearly stoichiometric. The X-ray photoelectron spectroscopy analysis of the Cr doped In₂O₃ thin films showed an increase of oxygen vacancies with Cr concentration and the existence of Cr as Cr³⁺ state in the host In₂O₃ lattice. A small blue shift in the optical band gap was observed in the powder compounds, when the dopant concentration increased from x = 0.03 to x = 0.07. In thin films, the band gap found to increase from 3.63 to 3.74 eV, with an increase of Cr concentration. The magnetic measurements show that the undoped In₂O₃ bulk powder sample has the diamagnetic property at room temperature. And a trace of paramagnetism was observed in Cr doped In₂O₃ powders. However (In_1?xCr_x)₂O₃ thin films (x = 0.00, 0.03, 0.05 and 0.07) samples shows soft ferromagnetism. The observed ferromagnetism in thin films are attributed to oxygen vacancies created during film prepared in vacuum conditions. The ferromagnetic exchange interactions are established between metal cations via free electrons trapped in oxygen vacancies (F-centers).     

Optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films

The paper presents the optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films with various In/(In + Zn) ratios obtained by Pulsed Laser Deposition. Thickness results obtained from simulations of X-ray Reflectivity and Spectroscopic Ellipsometry data were very similar. The dependence of density on stoichiometry resembles the corresponding dependence of the refractive index in the transparency range. A free carrier absorption was noted in the visible spectral range, leading to a weak absorbing thin transparent conductive oxide. On the other hand, the refractive index is smaller than those of based oxides (ZnO and In₂O₃), and counterbalance therefore the weak light absorption.     

Structural, optical and non-linear optics properties of highly doped molybdenum indium oxide thin film

Molybdenum (Mo)-doped In₂O₃ thin film with 10 wt% was successfully prepared by evaporation method. After annealing at 600 °C the film changes it colour from very dark to a clear transparent film. SEM and AFM analysis reveal that the film is continuous with high metallic coverage >98 % and exhibits a granular structure with typical grain size of 50 nm. More interestingly, the film shows more than 90 % transparency from visible to near infrared region and with wide optical band gap of 4.26 eV. The widening of the band gap is due to the Burstein–Möss (BM) effect as Mo will occupy In sites within the structure of the film thus increasing the carrier concentration thus enhancing its electrical properties. The nonlinear optical properties of Mo-doped In₂O₃ film with glass substrate were investigated using z-scan technique. Under cw excitation the film exhibits large reverse saturation absorption and negative nonlinearities. The real and imaginary parts of third order susceptibility of the film were measured and found that the imaginary part which arises from the change in absorption is dominant.