利用脉冲直流磁控溅射制备ZnO:Al薄膜的研究

利用中频脉冲直流磁控溅射法制备了平面ZnO:Al(AZO)透明导电薄膜,研究了沉积压力、衬底温度和溅射功率对AZO薄膜光电性能、薄膜稳定性的影响.结果表明:在较低沉积压力、衬底温度及溅射功率下,可获得具有低电阻率、高透过率、高稳定性的AZO薄膜.     

溅射功率对ZnO:Al薄膜光电性能的影响

采用射频磁控溅射工艺,以Al掺杂ZnO(ZAO)陶瓷靶为靶材在石英玻璃基片上制备出具有优良光电性能的ZAO透明导电薄膜,研究了溅射功率对薄膜光电性能的影响。在不同溅射功率条件下制备的ZAO薄膜具有很好的c轴择优取向。较大功率溅射有利于薄膜晶粒尺寸的增大、电阻率降低。ZAO薄膜在可见光区的透过率平均值高达90%以上,受溅射功率影响不大。在340nm-420nm波长附近ZAO薄膜透过率急剧下降,呈现明显的紫外吸收边;高的溅射功率提高了ZAO薄膜的光学带隙宽度。     

VO2镀膜工艺与薄膜导电特性的研究

利用射频磁控溅射方法制备了VO2薄膜,通过正交试验设计研究镀膜工艺因素对薄膜导电特性的影响规律.试验结果表明,影响薄膜导电性能的主要因素是热处理温度,其次是衬底的温度,溅射功率和工作压强对薄膜导电性能的影响很小.X射线衍射结果表明,制备的VO2薄膜为非晶体结构,480℃真空热处理后,VO2薄膜结晶良好.由此得到制备VO2薄膜的最优化工艺为:衬底的温度400℃、热处理温度480℃、溅射频率120W和工作气压1.5Pa.     

反应磁控溅射法制备F掺杂ZnO(FZO)薄膜的结构和透明导电性能

以Zn/ZnO/ZnF2混合物为靶材,在衬底温度(Ts)为150℃和300℃、溅射气氛为Ar+O2和Ar+H2下反应溅射制备F掺杂ZnO(FZO)薄膜,研究气体流量、Ts以及溅射气氛对薄膜结构及透明导电性能的影响.结果表明:对于Ar+O2下制备的FZO薄膜,Ts=300℃时有利于制备出具有(002)择优取向、结晶度高、压应力低且透明导电性能较好的薄膜.对于Ar+H2下制备的薄膜,Ts增大到300℃虽然提高了薄膜结晶度和透光性,降低了压应力,但薄膜厚度明显降低,薄膜导电性能变差.比较两种气氛下制备的FZO薄膜,发现Ar+H2下制备的薄膜可在150℃和0.8～3.2 mL·min-1的H2流量范围内得到更好的透明导电性能(电阻率为3.5×10-3Ω·cm,可见光平均透光率为87％).讨论Ar+H2气氛时H等离子的刻蚀作用与H掺杂、A r+O 2气氛时O离子的轰击作用与薄膜氧缺陷的变化、Ts升高时沉积原子反应活性与迁移能力增强以及Eg与载流子浓度的关系.     

溅射功率和氧分压对ITO薄膜光电性能的影响研究

采用直流反应磁控溅射法制备了氧化铟锡(ITO)透明导电薄膜,通过四探针、紫外可见分光光度计、X射线衍射(XRD)、霍尔效应仪、扫描电镜(SEM)等对薄膜样品进行了表征,研究了溅射功率和氧分压对ITO薄膜微观结构和光电性能的影响,结果表明:溅射功率对ITO的光电性能影响较小,沉积速率随着溅射功率的增大而加快;随着氧分压的升高,载流子浓度降低,霍尔迁移率先增大后减小,电阻率逐渐增大。在优化的工艺条件下,制备了在可见光区平均透过率达85%、电阻率为1×10-4Ω.cm的光电性能优良的ITO薄膜。     

磁控溅射制备ITO薄膜光电性能的研究

采用直流磁控溅射方法在玻璃基底上制备了ITO薄膜.分别用分光光度计和四探针仪测试了所制备ITO薄膜在可见光区域内的透过率和电阻率,研究了溅射气压、氧氩流量比和溅射功率三个工艺参数对ITO薄膜光电性能的影响.研究结果表明,制备ITO薄膜的最佳工艺参数为:溅射气压0.6 Pa,氧氩流量比1:40,溅射功率108 W.采用此工艺参数制备的ITO薄膜在可见光区平均透过率为81.18％,薄膜电阻率为8.9197×10-3Ω·cm.     

直流磁控溅射制备ZAO透明导电薄膜及性能研究

运用直流磁控溅射法,采用ZAO陶瓷靶材(Al2O3相对含量2%(质量分数)),结合正交实验表通过改变制备工艺中的基片温度、溅射功率、氧流量百分比等参数,在普通玻璃衬底上制备得到ZnO∶Al(ZAO)透明导电薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)、荧光分光光度计、四探针测试仪对样品的晶体结构、表面形貌、光电性能进行表征分析。通过正交分析法得出直流磁控溅射法制备ZAO薄膜的最佳组合工艺为基片温度200℃,溅射功率40W,氧流量百分比20%,退火温度400℃,获得薄膜样品最低方块电阻11Ω/□,薄膜具有最好的发光性能,适合作为薄膜太阳电池的透明导电电极。     

直流磁控溅射法制备掺钛氧化锌透明导电薄膜

采用直流磁控溅射法在室温水冷玻璃衬底上制备出高质量的掺钛氧化锌(ZnO:Ti)透明导电薄膜,研究了溅射功率对ZnO:Ti薄膜结构、形貌和光电性能的影响,结果表明,溅射功率对ZnO:Ti薄膜的结构和电阻率有显著影响.XRD表明,ZnO:Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向.当溅射功率为130W时,实验制备的ZnO:Ti薄膜的电阻率具有最小值9.67×10~(-5)Ω·cm.实验制备的ZnO:Ti薄膜具有良好的附着性能,可见光区平均透过率超过91%.ZnO:Ti薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极.     

室温直流磁控溅射制备ITO膜及光电性能研究

室温条件下,在玻璃衬底上,采用直流磁控溅射法制备了ITO膜.研究了溅射压强,氧流量和溅射功率等工艺参数对薄膜光电性能的影响.结果表明当Ar流量为44.2 sccm和溅射时间20 min等参数不变时,溅射气压0.7 Pa,氧流量0.62 sccm和溅射功率130 W为最佳工艺条件.并得到了电阻率5.02×10-4 Ω·cm,在可见光区平均透过率80%以上ITO薄膜.     

基于神经网络的AZO薄膜制备工艺参数的正交优化设计

采用磁控溅射法制备AZO薄膜,研究和讨论了溅射功率、溅射时间和溅射气压3个工艺参数对AZO薄膜光学和电学性能的影响。采用正交优化设计,对3个工艺参数进行优化,测量了透射率和电阻率,以此作为薄膜光电性能的评价指标,通过极差值分析确定了制备薄膜的最佳工艺参数。影响薄膜透射率的最主要因素为溅射气压;影响电阻率的最主要因素为溅射时间。获得制备高透射率低电阻率的AZO薄膜的最佳工艺组合方案为溅射功率为400W、溅射时间为1000s、溅射气压为1.0Pa。将反馈型(BP)神经网络应用于磁控溅射AZO薄膜光学性能(可见光区的平均透射率)和电学性能(电阻率)的研究。输入样品数据对神经网络进行训练,建立AZO薄膜光电性能随溅射参数变化的预测模型。     

白宝石上生长SiO2薄膜的工艺

用射频磁控反应溅射法,以高纯Si为靶材,高纯O2为反应气体,在白宝石上制备SiO2薄膜。对影响薄膜生长的工艺参数进行了分析,测试了薄膜的成分,并研究了薄膜的红外光学性能。结果表明,制备的薄膜中Si和O形成SiO2化学键,计算出的O与Si的原子比接近2:1,采用射频磁控反应溅射法在白宝石上能够沉积出SiO2薄膜。制备出的SiO2薄膜对白宝石衬底有较好的增透作用。     

含钛MoS2合金减摩镀层摩擦学性能研究

应用闭合磁场非平衡磁控溅射离子镀技术,制备了不同Ti含量的MoS2合金减摩镀层,研究了添加元素Ti含量对镀层厚度、硬度、摩擦系数等的影响规律.结果表明MoS2合金减摩镀层的厚度与添加元素Ti溅射靶的输入功率无关,其硬度随Ti含量增加而提高.不同Ti含量的镀层摩擦系数呈现出不同的变化规律.Ball-on-disc 球盘摩...     

Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering

High rate deposition of ITO thin films at a low substrate temperature was attempted by using a facing target sputtering (FTS) system. Deposition rate as high as 53 nm/min was realized on polycarbonate film substrate of 80-μm thickness. When the film was deposited at a deposition rate above 80 nm/min, polycarbonate film substrate was thermally damaged. The film deposited by FTS has much smaller compressive film stress than the film deposited by conventional magnetron sputtering. The film stress was reduced significantly by increasing the sputtering gas pressure and stress-free films can be obtained by adjusting the sputtering gas pressure. This may be mainly caused by the fact that bombardment by high energy negative oxygen ions to substrate surface during deposition can be completely suppressed in the FTS. Film structure and electrical properties changed little with substrate position, and uniform films were obtained by the FTS.     

Effects of sputtering power on mechanical properties of Cr films deposited by magnetron sputtering

Abstract

Chromium (Cr) films were deposited on plain carbon steel sheets by dc and rf magnetron sputtering as well as by electroplating. Effects of dc or rf sputtering power on the deposition rate and properties such as, hardness, adhesion strength, surface roughness and corrosion resistance of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. Salt fog tests were used to evaluate the corrosion resistance of the samples. The deposition rate, hardness and surface roughness of the Cr film deposited by either dc or rf sputtering increase with the increase in sputtering power but the adhesion strength is nearly independent of the sputtering power. The deposition rate, hardness and adhesion strength of the Cr film deposited by dc sputtering are higher than those of the Cr film deposited by rf sputtering, but rf sputtering offers smoother surface and higher corrosion resistance. The sputter deposited Cr film is harder and has a smoother surface than the electroplated one. The sputter deposited Cr film also has higher corrosion resistance than the electroplated one, which may be attributed to the smoother surface of the sputter deposited film.     

蓝宝石衬底上制备SiO2薄膜的研究

采用射频磁控反应溅射法,以高纯Si为靶材,高纯O2为反应气体,成功地在蓝宝石基片上制备出了二氧化硅(SiO2)薄膜,并对薄膜的沉积速率、成分、结构及红外光学性能进行了研究.结果表明,制备的SiO2薄膜与蓝宝石衬底结合牢固;和其它镀膜技术相比,射频磁控反应溅射法可以在较低的温度下制备出SiO2薄膜;制备出的SiO2薄膜在3～5μm波段对蓝宝石衬底有明显的增透效果.     

Influence of film thickness and annealing atmosphere on the structural, optical and luminescence properties of nanocrystalline TiO2 thin films prepared by RF magnetron sputtering

TiO₂ thin films were deposited onto quartz substrates by RF magnetron sputtering. Inorder to investigate the effect of film thickness on the structural and optical properties, films were deposited for different time durations, and post-annealed at 873 K. The influence of annealing atmosphere (air/oxygen) on the film properties was also investigated. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–vis spectroscopy and photoluminescence (PL) spectroscopy. Films deposited at different time durations are amorphous-like in nature. From XRD patterns it can be inferred that deposition for longer duration is essential for achieving crystallisation in TiO₂ thin films prepared by RF magnetron sputtering. The films exhibited good adherence to the substrate and are crack free as revealed by SEM images. Film thickness was found to increase with increase in sputtering time. The optical band gap of the films was found to decrease with increase in film thickness, which is consistant with XRD observations. Film thickness did not show any significant variation when annealed in both air and oxygen. Defect related PL emission in the visible region (blue) was observed in all the investigated films, which suggests the application of these films in optoelectronic display devices.     

1-3型压电复合材料电极的制备

采用磁控溅射工艺以Cu、Ag为靶材在1-3型压电复合材料表面制备电极．研究了两种金属材料的溅射镀膜工艺，系统地分析了溅射功率对金属沉积速率、电极导电性能及附着力的影响．结果表明，两种金属的沉积速率随溅射功率的增加呈线性增加，电极方阻及电阻率均随功率增大而减小，溅射功率为100W时电极的附着力较好．     

射频溅射Y-ZrO_2薄膜的研究

采用射频磁控溅射法制成含钇的二氧化锆薄膜,借助背散射分析(RBS)、透射电子显微镜(TEM)和X光衍射(XRD)方法研究了薄膜的化学剂量比、微观结构和相结构。同时研究了微观结构与机械性能(显微硬度、韧性、抗磨损性)之间的关系,以及退火对相稳定性的影响。     

直流磁控溅射功率对ITO薄膜光学性能的影响

本实验的ITO薄膜样品是利用直流磁控溅射技术在玻璃基片上沉积而成的。通过改变溅射功率,研究不同溅射功率对ITO薄膜光学性能的影响。经各实验测试后发现：在实验给定的功率区间内,ITO薄膜的厚度随着溅射功率的增加而增加,其可见光透过率则随之降低。