碳纳米管及其掺杂氧化物半导体气敏传感器

碳纳米管气敏传感器以其工作温度低和最低检出限较低等优点而备受关注,而碳纳米管掺杂氧化物半导体气敏传感器兼备了氧化物半导体气敏传感器和碳纳米管气敏传感器二者的优点,具有灵敏度较高、最低检出限低和工作温度低等特性。综述了这两类传感器的研究进展,介绍了其气敏机理,并对相应存在的问题及今后的发展趋势进行了概述。     

新型氧化物半导体气敏传感器的研究进展

空气质量日益恶化问题引起了人们的重视.为了监控空气质量,研究者开发了很多种类的气敏传感器,其中氧化物半导体气敏传感器具有灵敏度高、制造成本低和信号测量手段简单等优点,成为了目前的主流产品.综述了该类型新型传感器的研究进展,介绍了其气敏机理、结构和制作方法,并概述了其存在的问题及今后的发展趋势.     

掺杂氧化物半导体在复合隐身方面的研究进展

从掺杂氧化物半导体材料的隐身理论、复合隐身研究方向以及研究进展等方面,介绍了掺杂氧化物半导体在隐身材料方面的研究现状。     

氧化物半导体丙酮气敏传感器材料研究与应用

低浓度丙酮气体的检测在监测工业生产、食品质量、畜牧业和疾病等中有重要的作用.综述了近年来氧化物半导体丙酮气敏传感器材料的研究进展,并对传感器材料的形态、制备方法、敏感机理及存在的问题进行了分析,指出了发展方向.     

氧化物半导体气敏传感器的改性研究进展

氧化物半导体气敏传感器具有灵敏度高、制造成本低、信号测量手段简单、使用方便等优点,在有毒有害气体实时监测方面极具应用潜力。综述了新型氧化物半导体气敏感器改性的研究进展、存在的问题及发展趋势。     

稀土氧化物掺杂对SnO2基气体传感器材料性能的影响

采用化学共沉淀法制备Ｙ２Ｏ３、ＺｒＯ２,Ｅｒ２Ｏ３和Ｓｂ２Ｏ２基气体传感器。结果表明掺杂后的材料经煅烧后,平均晶粒尺寸均小于３０ｎｍ,比未经掺杂的材料小,中掺杂体系不同成分材料制备成厚膜传感器,进行了对ＣＯ气体敏感度性能测试,发现掺杂稀土氧化物的气体敏感度较纯ＳｎＯ２厚膜传感器高。其中掺杂Ｅｒ２Ｏ３材料性能最好。     

掺杂对金属半导体氧化物气敏性能影响的研究

综述了金属氧化物半导体气敏元件的掺杂技术，探讨了掺杂作用的机理，列举了对最典型半导体气敏元件的掺杂以及掺杂对气敏元件灵敏度和选择性的影响作用。     

TiO2基氧化物半导体氧敏传感器的研究开发进展

综合介绍TiO2基氧化物半导体氧敏传感器的研究发展历史和TiO2材料的特性,比较了各种氧敏机理、制备方法、传感器的氧敏特性,就制备方法－材料微观结构－氧敏性能关系中的几个重要问题,进行了深入的探讨,并对今后的研究开发与产业化,结合本课题组的研究工作,提出了几点建议。     

Behaviour of semiconductor low temperature sensors in electromagnetic environments

The effect of an electromagnetic field, with frequencies in the 30 – 300 MHz range, on semiconductor cryogenic thermometers, eg silicon diode temperature sensors as well as silicon and germanium resistance thermometers, has been investigated at temperatures from 70 to 300 K.The changes in voltage drop or resistance versus temperature characteristics of the tested thermometers for various fixed frequencies of external electromagnetic field have been found. The frequency dependent electromagnetic field behaviour of the thermometers was studied and a resonance character of the ‘error’ ΔT has been evaluated.It has been shown that the semiconductor low temperature sensors may only be used for accurate recalibration in the presence of a well-known, low-intensity EM field at a constantly held frequency not corresponding with the maximum values of ΔT.     

Influences of unintentionally doped carbon on magnetic properties in Mn-N co-doped ZnO

Carbon impurities are usually unintentionally doped in N-doped ZnO when attempting to realize p-type conductivity by metal-organic chemical vapor deposition. Mn-N co-doping technique, which is developed to realize hole-mediated room temperature ferromagnetism in ZnO, may further enhance the carbon incorporation. In this work, two kinds of Mn-N co-doped samples, grown at low temperature (400 °C) and high temperature (600 °C), respectively, have been compared to study the influences of carbon impurities. In contrast to that found on N mono-doped ZnO, an enhanced incorporation of carbon impurities is observed in the high-temperature-grown Mn-N co-doped sample with the conductivity changed from p to n type. According to X-ray photoelectron spectroscopy measurement, the compensation effect from carbon impurities is applied to elucidate the origin of the conductivity transition. Correspondingly, superconducting quantum interference device measurement certainly shows a much smaller value of the saturation magnetization for the high-temperature-grown sample. A possible effect from carbon related complexes on magnetization is also proposed to explain the decrease of the magnetic moment from the view of weakened spin polarization induced by unintentionally incorporated carbon. This assumption is further supported by the first-principle calculation on the Mn-N co-doped ZnO system with carbon incorporation.     

Ce-TiO2光催化剂的制备与性能研究

采用溶胶-凝胶法制备了稀土Ce离子掺杂的纳米TiO2光催化剂(Ce-TiO2),通过XRD、FT-IR、UV-Vis、PL、Nano-sizer纳米粒度分析仪等对Ce-TiO2样品进行了表征和分析,并以亚甲基蓝(MB)作为目标降解物,考察了不同掺杂浓度及经不同温度热处理后的Ce-TiO2样品对MB的光催化降解效果,结果表明所制备样品的晶型均为锐钛矿相和金红石相的混晶相,Ce离子的掺杂拓展了TiO2在可见光区的光谱响应范围,提高了TiO2光催化活性。当pH值为1.5,Ce的掺杂量为n(Ce)∶n(TiO2)=1∶300,热处理温度为600℃条件下制备的样品其催化活性显著高于Degussa P25。     

含C、Ge的Fe-Si-Mn基热电材料的电学性能

对掺C和Ge的Fe—Si—Mn基热电材料的电学性能研究表明，相对于未掺的Fe—Si—Mn基热电材料，掺C样品的电阻率降低，但热电动势率增加。掺Ge样品的电阻率有所升高，但热电动势率增加更快，因此掺C、Ge样品有较高的功率因子，比未掺样品提高近1倍。     

Pr-TiO2光催化剂的制备与性能研究

采用溶胶-凝胶法制备了稀土元素Pr掺杂的纳米TiO2光催化剂(Pr-TiO2)。通过XRD、FT-IR、UV-Vis、TEM等对Pr-TiO2样品进行了表征和分析,并以亚甲基蓝(MB)作为目标降解物,考察了不同热处理温度及不同掺杂量的Pr-TiO2对MB的光催化降解效果。结果表明,Pr掺杂纳米TiO2的晶型为锐钛矿相和金红石相的混晶相,Pr的掺入提高了TiO2光催化活性。当热处理温度为500℃,在pH值为2.5,Pr掺杂量为n(Pr):n(TiO2)=1:300的条件下制备的光催化剂的催化活性显著高于DegussaP25。     

Tuning photoluminescence of ZnS nanoparticles by silver

We report the results of investigation of the interaction of silver with presynthesized ZnS nanoparticles (NPs) that was stabilized by cetyl trimethyl ammonium bromide (CTAB). The photoluminescence properties of ZnS NPs were followed in the presence of Ag⁺ ions, Ag NPs and by the synthesis of Ag@ZnS core-shell nanoparticles. We observed that CTAB stabilized ZnS NPs emitted broadly in the region from 350–450 nm, when excited by 309 nm light. In the presence of Ag⁺ ions the emission peak intensity up to 400 nm was reduced, while two new and stronger peaks at 430 nm and 550 nm appeared. Similar results were obtained when Ag NPs solution was added to ZnS solution. However, when Ag@ZnS NPs were synthesized, the emission in the 350–450 nm region was much weaker in comparison to that at 540 nm, which itself appeared at a wavelength shorter than that of Ag⁺ ion added ZnS NPs. The observations have been explained by the presence of interstitial sulfur and Zn²⁺, especially near the surface of the nanocrystals and their interaction with various forms of silver. In addition, our observations suggest that Ag⁺ ions diffuse into the lattice of the preformed ZnS NPs just like the formation of Ag⁺ doped ZnS NPs and thus changes the emission characteristics. We also have pursued similar experiments with addition of Mn²⁺ ions to ZnS and observed similar results of emission characteristics of Mn²⁺ doped ZnS NPs. We expect that results would stimulate further research interests in the development of fluoremetric metal ion sensors based on interaction with quantum dots.     

碳纳米管的化学镀银

碳纳米管因其优异的力学、物理性能，是一种理想的复合材料增强体。通过化学镀可在碳纳米管表面镀上一层连续的银镀层，以增强碳纳米管与金属基体的界面结合力．本文研究了在碳纳来管上化学沉积银的工艺及其影响因素．SEM、TEM观察表明：氧化、活化及镀是影响镀层质量的最重要因素．尽可能多的活化点以及尽可能慢的镀速将大大改善镀层质量。     

Atmospheric pressure chemical vapour deposition of thermochromic tungsten doped vanadium dioxide thin films for use in architectural glazing

Atmospheric pressure chemical vapour deposition of VCl₄, WCl₆ and water at 550 °C lead to the production of high quality tungsten doped vanadium dioxide thin films. Careful control of the gas phase precursors allowed for tungsten doping up to 8 at.%. The transition temperature of the thermochromic switch was tunable in the range 55 °C to − 23 °C. The films were analysed using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. Their optical properties were examined using variable-temperature transmission and reflectance spectroscopy. It was found that incorporation of tungsten into the films led to an improvement in the colour from yellow/brown to green/blue depending on the level of tungsten incorporation. The films were optimized for optical transmission, thermochromic switching temperature, magnitude of the switching behaviour and colour to produce films that are suitable for use as an energy saving environmental glass product.