共查询到20条相似文献,搜索用时 15 毫秒
1.
Kattamis A.Z. Cheng I.-C. Ke Long Hekmatshoar B. Cherenack K.H. Wagner S. Sturm J.C. Venugopal S.M. Loy D.E. O'Rourke S.M. Allee D.R. 《Display Technology, Journal of》2007,3(3):304-308
The transition of thin-film transistor (TFT) backplanes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane technology on a clear plastic substrate. To be sufficiently stable under bias stress, amorphous-silicon (a-Si:H) TFTs must be deposited at elevated temperatures, therefore the substrate must withstand high temperatures. We fabricated a-Si:H TFT backplanes on a clear plastic substrate at 200degC. The measured stability of the TFTs under gate bias stress was superior to TFTs fabricated at 150degC. The substrate was dimensionally stable within the measurement resolution of 1, allowing for well-aligned 8 times 8 and 32 times 32 arrays of pixels. The operation of the backplane is demonstrated with an electrophoretic display. This result is a step toward the drop-in replacement of glass substrates by plastic foil. 相似文献
2.
Striakhilev D. Nathan A. Vygranenko Y. Servati P. Lee C.-H. Sazonov A. 《Display Technology, Journal of》2006,2(4):364-371
Amorphous silicon (a-Si) thin-film transistor (TFT) backplanes are very promising for active-matrix organic light-emitting diode displays (AMOLEDs) on plastic. The technology benefits from a large manufacturing base, simple fabrication process, and low production cost. The concern lies in the instability of the TFTs threshold voltage (VT) and its low device mobility. Although VT-instability can be compensated by means of advanced multi-transistor pixel circuits, the lifetime of the display is still dependent on the TFT process quality and bias conditions. A-Si TFTs with field-effect mobility of 1.1 cm2/Vmiddots and pixel driver circuits have been fabricated on plastic substrates at 150 degC. The circuits are characterized in terms of current drive capability and long-term stability of operation. The results demonstrate sufficient and stable current delivery and the ability of the backplane on plastic to meet AMOLED requirements 相似文献
3.
Xueqiang Liu Tong Zhang Lijie Wang Zhiqiang Xia Mingyou Li Shiyong Liu 《Display Technology, Journal of》2008,4(2):229-232
A novel method is introduced using to evaluate the quality of thin-film transistor (TFT) array for driving active-matrix display (OLED). By the means of this method, the operation states of the TFT or the defects of TFT can be judged. It is a current testing method with the advantages of fast response, excellent precision, no effect to aperture and no damage to the display array. 相似文献
4.
《Electron Devices, IEEE Transactions on》2006,53(8):1789-1796
An amorphous-silicon thin-film transistor (TFT) process with a 180$^circhboxC$ maximum temperature using plasma-enhanced chemical vapor deposition has been developed on both novel clear polymer and glass substrates. The gate leakage current, threshold voltage, mobility, and on/off ratio of the TFTs are comparable with those of standard TFTs on glass with deposition temperature of 300$^circhboxC$ –350$^circhboxC$ . Active-matrix pixel circuits for organic light-emitting displays (LEDs) on both glass and clear plastic substrates were fabricated with these TFTs. Leakage current in the switching TFT is low enough to allow data storage for video graphics array timings. The pixels provide suitable drive current for bright displays at a modest drive voltage. Test active matrices with integrated polymer LEDs on glass showed good pixel uniformity, behaved electrically as expected for the TFT characteristics, and were as bright as 1500$hboxcd/hboxm^2$ . 相似文献
5.
A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure. 相似文献
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Aluminum was detected in the channel of a thin-film transistor after its replacement of the polycrystalline silicon source and drain junctions. The resulting transistor exhibits enhanced field-effect mobility, steeper slope of the pseudosubthreshold region, reduced turn-on voltage extrapolated from the linear regime of operation, higher on-state current, and improved immunity against short-channel effects. These improvements are consistent with a measured reduction in the density of trap states. The reduction can be attributed to the presence of aluminum in the channel 相似文献
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Ofuji M. Abe K. Shimizu H. Kaji N. Hayashi R. Sano M. Kumomi H. Nomura K. Kamiya T. Hosono H. 《Electron Device Letters, IEEE》2007,28(4):273-275
Five-stage ring oscillators (ROs) composed of amorphous In/Ga/Zn/O (a-IGZO) channel thin-film transistors (TFTs) with the channel lengths of 10 mum were fabricated on a glass substrate. The a-IGZO layer was deposited by RF magnetron sputtering onto the unheated substrate. The RO operated at 410 kHz (the propagation delay of 0.24 mus/stage), when supplied with an external voltage of +18 V. This is the fastest integrated circuit based on oxide-semiconductor channel TFTs to date that operates faster than the ROs using conventional hydrogenated amorphous silicon TFTs and organic TFTs 相似文献
10.
An analytical model for the transfer characteristics of a polycrystalline silicon thin-film transistor (TFT) with an undoped channel is developed. While the modeling methodology is general, the analytical form is based on the observation that the trap states in a grain boundary are exponentially dispersed over the energy space defined by the energy gap of the adjacent grains. The dispersion relationship is parameterized by an energy EA. The complex mechanisms governing carrier transport in a TFT are modeled in terms of an effective ldquodriftrdquo mobility mueff that also accounts for the thermionic emission of charge carriers across the grain boundaries. A gate bias V pt can be identified that roughly locates the transition from the ldquopseudo-subthresholdrdquo and the ldquoturn-onrdquo regimes of operations. Techniques for the extraction of EA and the transition voltage V pt are proposed. A particularly simple expression of mueff can be obtained in terms of these and other parameters. 相似文献
11.
《Display Technology, Journal of》2008,4(3):296-299
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氢化非晶硅场效应晶体管的特性对环境因素较为敏感,如光照、温度和湿度等。文中介绍光照和退火引起的氢化非晶硅场效应晶体官场效应特性的变化,并探讨导致这种变化的原因。 相似文献
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For a thin-film transistor (TFT) built on excimer-laser crystallized polycrystalline silicon, the dependence of the effective ldquograin-boundary mobilityrdquo on the gate-to-source voltage can be divided into two subregimes exhibiting different power-law characteristics. An expression for the effective mobility is developed using a procedure previously proposed for a TFT built on polycrystalline silicon exhibiting only single power-law dependence. The additional power-law component is reflected in the model by a pair of measurable and physically meaningful parameters. The procedure for determining these parameters is described and demonstrated. Both the measured and calculated transfer characteristics are reported and compared. The double power-law dependence implies a grain-boundary trap-state energy dispersion characterized by two exponential functions. This is presently verified. 相似文献
18.
详细介绍了在SiO2和高kHfO2介质层上制备并五苯薄膜晶体管方面的研究,特别是利用原子力显微技术(AFM)和静电力显微技术(EFM)研究了并五苯分子初始生长模式,揭示了衬底形貌、表面化学性能(包括化学清洗和聚合物层修饰)对有机半导体成膜结构和薄膜场效应晶体管性能之间的关联,包括晶体管迁移率、开关比和阈值电压等;针对并五苯初始生长成核模式的差异,分析了不同岛(畴)间畴边界对载流子在有机薄膜内输运的影响,有助于理解有机半导体薄膜导电机理。通过优化和控制介电层和有机半导体薄膜层的界面化学性质,在SiO2介质层上成功制备出迁移率为1.0cm2/V.s、开关电流比达到106的OTFT器件;在高kHfO2介质层上获得的OTFT器件的工作电压在-5V以下,开关电流比达到105,载流子迁移率为0.6cm2/V.s;器件性能指标已经达到目前国际上文献报道的最好水平。 相似文献
19.
Tong Hong Wang Yi-Shao Lai 《Electronics Packaging Manufacturing, IEEE Transactions on》2008,31(2):174-179
A design that optimizes package-level along with board-level thermomechanical reliability of a flip-chip package implemented with an organic or a silicon substrate is provided for the package subjected to an accelerated thermal cycling test condition. Different control factors including thickness of substrate, die, board, and polyimide or soldermask are considered. The optimal design is obtained using an L9 (34) orthogonal array according to the Taguchi optimization method. Importance of each of these control factors is also ranked. 相似文献
20.
Rong-Hwei Yeh Tai-Rong Yu Te-Cheng Chung Shih-Yung Lo Jyh-Wong Hong 《Electron Devices, IEEE Transactions on》2008,55(4):978-985
Direct-current and alternating-current white thin- film light-emitting diodes (DCW and ACW TFLEDs) have been fabricated and demonstrated with the intrinsic hydrogenated amorphous silicon nitride (i-a-SiN:H) film as the luminescent layer. The achievable brightness of the representative DCW and ACW TFLEDs were 200 and 170 cd/m2 at an injection-current density of 600 and 100 mA/cm2, respectively. The electroluminescence (EL) threshold voltage of the DCW TFLED was 10.9 V, and its peak wavelength and full-width at half-maximum (FWHM) of the EL spectrum were about 455 and 230 nm, respectively. For the ACW TFLED, the EL threshold voltage was 8.4 V, and its peak wavelength and FWHM of the EL spectrum were about 535 and 260 nm, respectively. In addition, their current-conduction mechanism was also investigated. Within the lower applied-voltage region, they showed an ohmic current, while for the higher applied-voltage region, the Frenkel-Poole emission was the main mechanism. It was also found that the H2 -plasma treatment of luminescent i-a-SiN:H layer of an ACW TFLED played an important role in improving device performances, such as decreased EL threshold voltage, increased brightness, and broadened and blue-shifted EL spectrum. The EL spectra of an ACW TFLED under either DC forward or reverse bias or the sinusoidal AC voltage were qualitatively very similar, with a peak wavelength at about 535 nm and a broad FWHM about 260 nm. Moreover, the EL intensity of an ACW TFLED increased with an AC frequency of up to 180 kHz and, then, decreased rapidly and became very weak as the frequency was up to about 500 kHz. 相似文献