一种高精度过温保护电路的设计

基于UMC 0.25um BCD工艺,设计了一款高精度过温保护电路。通过基准电路中三极管的基极-发射极电压的负温度特性实现温度检测,调节电阻的比值产生迟滞温度量,避免了电路热振荡现象。经过HSPICE仿真验证,电路在温度130℃时,过温保护信号发生翻转,关断芯片,待温度降低到99℃时再次开启,具有31℃迟滞量。在电源电压变化时,过温保护电路的过温阈值和迟滞温度量偏差最大仅为0.24℃。     

一种高精度阈值可调过温保护电路的设计

设计了一种高精度阈值可调过温保护电路。该电路利用与温度无关的电压和一个具有负温度系数的电压相比较,实现温度的检测。通过基准分压得到高、低阈值电压可调的迟滞比较器,具有较高的精度。基于0.18μm BCD工艺模型,利用Hspice软件对电路进行仿真。仿真结果表明,在典型应用下,当温度高于150.5℃时,过温保护电路输出高电平,关断电路;当温度低于130.5℃时,电路重新开启,具有20℃迟滞量。在3~5.5 V电源电压范围内,过温电压阈值和迟滞温度最大偏移量小于0.02℃。     

一种用于马达驱动芯片的新型过温保护电路

为简化电路结构,提高精度和降低功耗,提出了一种新型过温保护电路。该电路无需基准电压和比较器,利用PTAT电流源的正温度系数特性,对温度进行检测,同时设计迟滞回路,避免了热震荡的发生。基于HHNEC的0.35μm BCD工艺实现,在电源电压为3V~5.5V下进行测试结果表明,该电路热关断温度为165℃,温度迟滞量为15℃,误差为1℃,与仿真结果一致,可以广泛应用于功率集成芯片中。     

0.13μm CMOS高精度过温保护电路的设计

采用0.13 μm CMOS工艺,设计了一款过温保护电路.芯片内部温度超过109℃时,产生过温保护信号,电路停止工作,从而起到保护作用.为了防止产生热振荡,采用滞回方式.设计实现了在109℃时关断,78℃时再次开启,有31℃滞迟.仿真结果显示,在电源电压波动或工艺参数变化时,过温保护电路的热关断及迟滞阈值点漂移最大误差仅为2℃,稳定性好.     

VDMOS过温保护功能的实现

提出一种内部集成过温保护功能的VDMOS器件。对传统过温保护原理进行了分析,在此基础上,提出了一种适用于功率器件过温保护的改进电路结构。仿真结果表明,该器件在温度超过174℃时实现自关断,在温度降回142℃时实现自重启。该温度迟滞功能可有效防止热振荡。     

一种应用于LIN收发器的过温保护电路

基于CSMC (Central Semiconductor Manufacturing Corporation)0.5μm CMOS工艺设计一种应用于LIN收发器的过温保护电路.该电路包含比较器,并利用两种不同温度特性的电压作为比较器的输入电压.比较器的输出电压作为过温保护电路的输出信号.使用Cadence Spectre工具进行仿真,仿真结果表明,该电路热关断温度为160℃,热开启温度为120℃,具有40℃的热滞回区间.     

一种基于电流比较的新型过温保护电路

为了防止芯片过热,提高芯片可靠性和稳定性,提出了一种改进的高精度、低功耗、具有迟滞功能且结构简单的过温保护电路。在不引入热振荡的前提下,实现稳定电路温度和输出关断信号的双重功能。阐述了过温保护电路的工作原理,基于先锋国际半导体公司的BiCMOS0.5μm工艺库模型进行电路设计,采用Hspice软件并用先锋国际半导体公司的BiCMOS 0.5μm工艺库模型对该电路进行模拟仿真。仿真结果表明:当外界温度达到137℃时,过温保护电路输出发生翻转,从而关断芯片内的其他电路,降低功耗,使温度降低。当温度降到120℃时,芯片回到正常工作状态,温度迟滞量为17℃,性能稳定可靠。     

一种用于升压型DC-DC变换器的过温保护电路

设计了一种用于升压型DC-DC变换器的过温保护电路。采用具有正负温度系数的电流相减,得到随温度变化更加明显的电流,经过电阻分压控制三极管的通断,并采用推挽反相器整形滤波后得到输出信号,实现了芯片过温关断和迟滞开启的功能。采用HHNEC BCD 0.35μm工艺,使用Cadence软件进行仿真验证。仿真结果显示,在各个工艺角及电源电压波动情况下,电路均能在芯片温度上升到170℃时关断、在芯片温度下降到140℃时开启,迟滞值为30℃(±2℃)。     

可用于音频功放的过温保护电路设计

在分析温度对集成电路芯片工作可靠性、安全性影响的基础上,利用与温度成正比的PTAT电流和负温度系数的PN结电压,设计了一种低功耗的过温保护电路.该电路结构简单、工艺兼容性好、具有良好的移植性,可以应用于音频功放及各类集成电路芯片中.同时该电路还具有温度的迟滞特性,可以更好地保护芯片,避免振荡的产生.0.35 μm Cadence Specture仿真结果表明,该电路功耗低且可以实现高精度的过温保护功能.     

一种高精度过温保护电路的设计

设计了一种高精度的过温保护电路。利用晶体管基极和发射极的负温特性实现温度检测,通过将检测点电压和设定的电压相比较,检测是否过温。由于使用了一个高、低阈值可调的高精度滞回比较器,并且阈值电压点电压由与温度无关的带隙基准提供,因此实现较高的精度和可靠性。通过Cadence Spectre工具基于某公司0.35μm CMOS工艺进行了仿真验证。该设计具有20℃温度迟滞,热关断点为125℃,热开启点为105℃,在3~5.5 V的电压范围内,热关断点和热开启点温度最大漂移不超过0.4℃。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.