化学气相沉积氮化钛薄膜的研究

氮化钛薄膜材料具有优良的性能，应用广阔，总结了化学气相沉积制备氮化钛薄膜的方法和原理，介绍了化学气相沉积在制备氮化钛方面的应用现状和研究成果，分析了各种化学气相沉积方法的优势。     

碳化硼薄膜制备技术研究进展

本文归纳了碳化硼薄膜的主要特性以及近年来在功能陶瓷、热电元件等方面的广泛应用。总结了目前物理气相沉积(PVD)和化学气相沉积(CVD)技术制备碳化硼薄膜的主要方法,包括磁控溅射法、离子束蒸镀法、经典化学气相沉积法(c-CVD)、等离子增强化学气相沉积法(PECVD、激光化学气相沉积法(LCVD)和热丝化学气相沉积法(HFCVD)等,讨论了各种沉积技术制备碳化硼薄膜工艺中各种实验参数对薄膜生长过程的影响,并对该领域今后的研究方向进行了展望。     

物理气相沉积对离子交换玻璃中钾离子浓度的影响(英文)

采用真空烘烤热蒸发沉积和离子束辅助沉积两种方法在离子交换玻璃上分别镀制ZnS薄膜,用扫描电镜和电子探针线扫描分析了物理气相沉积对离子交换玻璃中K＋浓度的影响,并测量了经不同方法镀膜玻璃的抗弯强度。结果表明：镀膜的离子交换玻璃中K＋的分布峰值减小并从玻璃表面向玻璃内部移动;与真空烘烤热蒸发沉积相比,离子束辅助沉积ZnS薄膜的离子交换玻璃中K＋的分布峰值增大且继续向玻璃内部移动,K＋浓度分布也随之移动,并导致离子交换玻璃力学性能下降。     

面向芯片制造过程的含Si-N键化合物

叙述了在芯片制造过程中,含硅薄膜沉积所需的前体化合物的制备。介绍了芯片制造过程中沉积含硅薄膜的方法,包括原子沉积法、脉冲激光沉积法、化学气相沉积法以及磁控溅射法。未来含硅薄膜在电子材料、光学器件和太阳能电池等方面的需求会逐步提高,在此基础上有望制备出更优异的含硅薄膜前体化合物,用于沉积制备纯度高、致密性好以及物理性能好的含硅薄膜。     

物理气相沉积（PVD）硬质薄膜及在工模具上的应用

材料的磨损、腐蚀及其它环境损伤是机械工业面临的基本问题之一，近年来，由离子参与和等离子体增强的各种气相沉积技术为解决这一问题提供了有效的途径。物理气相沉积（PVD）是制备硬质薄膜的主要方法之一，许多技术已实现工业化生产。本文综述了物理气相沉积技术制备的各种机械功能薄膜的性能及在工模具上的应用情况。     

掺钇氧化锆薄膜的制备方法及应用研究新进展

介绍了掺钇氧化锆(YSZ)薄膜的制备方法,这些方法包括化学气相沉积法、电化学气相沉积法、电泳沉积法、溶胶-凝胶法、溅射法、流延成型法和等离子喷涂等,并评述了这些方法的优缺点;介绍了YSZ薄膜作为重要的功能材料在气体、液体分离与纯化、高温催化膜反应器、燃料电池和功能涂层等方面的应用;指出了未来YSZ薄膜应用研究的发展趋势。     

纳米二氧化钛光催化薄膜的制备研究进展

主要根据近5年来国内外TiO2薄膜制备的研究现状,对TiO2薄膜的各种制备技术进行了综述,其中包括液相沉积法、溶胶一凝胶法、气相沉积法和电化学法,对各方法的优点和缺点进行了评述。并对TiO2薄膜未来研究方向提出了建议。     

纳米TiO2薄膜制备方法的研究进展

纳米二氧化钛以其优异的化学、物理性能受到关注。薄膜是纳米二氧化钛的重要形式,制备纳米二氧化钛薄膜具有重要意义和很好的应用前景。依据制备工艺中温度的要求,对制备纳米二氧化钛薄膜的方法进行了概述,高温制备的工艺主要有溶胶-凝胶法、水热法、气相沉积法,低温制备工艺主要有电泳沉积法、紫外光照射法、电化学制备法、模板自组装制备法。     

类金刚石薄膜在模拟体液中的电化学阻抗

利用双放电腔微波等离子体源全方位离子注入设备,分别采用等离子体增强化学气相沉积技术、等离子体源离子注入和等离子体增强化学气相沉积复合技术两种工艺对医用3161,不锈钢进行类会刚石薄膜表面改性。利用电化学阻抗谱法考察了两种工艺制备的类金刚石薄膜在模拟体液中的抗腐蚀性能。结果表明：与采用等离子体增强化学气相沉积技术制备的类金刚石薄膜相比,在72h的浸泡时间内,采用等离子体源离子注入和等离子体增强化学气相沉积复合技术制备的类金刚石薄膜防腐蚀性能明显增高,腐蚀阻抗较高,碳注入层可有效抑制溶液渗入薄膜和基体之间的界面,起到了腐蚀防护层的作用。动电位极化测试表明：采用复合技术制备的类金刚石薄膜在模拟体液中的腐蚀倾向性更低,钝态稳定性更好。     

纳米TiO2薄膜制备方法的研究进展

纳米二氧化钛以其优异的化学、物理性能受到关注。薄膜是纳米二氧化钛的重要形式,制备纳米二氧化钛薄膜具有重要意义和很好的应用前景。依据制备工艺中温度的要求,对制备纳米二氧化钛薄膜的方法进行了概述,高温制备的工艺主要有溶胶-凝胶法、水热法、气相沉积法,低温制备工艺主要有电泳沉积法、紫外光照射法、电化学制备法、模板自组装制备法。     

Ultra Thin Organic and Polymer Films

Abstract

Preparation of ultra thin organic and polymer films could be divided into two methods. One is the wet process such as Langmuir-Blodgett (LB), spreading, dipping and casting methods. The other is dry processing, such as vapor deposition, sputtering, chemical vapor deposition, plasma polymerization and vapor deposition polymerization methods. Of these methods, the LB method has been attractive for the last decade to prepare a monolayer film, however, the vapor deposition method has also attracted attention for the preparation of well organized ultra thin films. It is important to investigate a molecular assembly in terms of the extent of aggregation, the crystalline regularity and their orientation in the thin film, since they are closely related to the physical, electrical and functional properties. This review focuses on an evaluation of the structure, molecular assembly and orientation in the thin films prepared by the LB and vapor deposition methods.     

Patterned growth and field emission properties of vertically aligned carbon nanotubes

Vertically aligned carbon nanotubes were grown selectively on patterned Ni thin films by microwave plasma-enhanced chemical vapor deposition and their field emission properties were investigated using a diode-structure. Ni thin films patterned with a form of dot-arrays were prepared using a shadow mask having an array of holes. The nanotubes were found to be well-graphitized with multiwalled structures. The measurements of field emission properties revealed that the carbon nanotube tips emitted high current density at low macroscopic electric field. The Fowler–Nordheim (F–N) plot clearly showed two characteristic regions where the current saturates at the high electric field region. It was found that the saturation behavior was caused by the adsorbates-enhanced field emission mechanism. Eliminating the adsorbates resulted in no saturation behavior, increasing turn-on field, decreasing current, and increasing field enhancement factor. Using ZnS/Cu,Al phosphor, very bright and uniform emission patterns were obtained.     

纳米二氧化钛薄膜的制备技术及在环境保护中的应用

根据近几年国内外纳米二氧化钛薄膜材料的研究现状,对真空蒸发法、溅射法、溶胶．凝胶法、化学气相沉积法等方法的研究进行了综述,论述了当前二氧化钛薄膜的制备技术和最新研究方向及在环境保护方面的应用。二氧化钛薄膜材料在光电转换、生物医药、抗菌自洁等领域将有着广泛的应用前景,并对其今后发展进行了展望。     

化学气相沉积制备ZnS块材料均匀性的研究

以硫化氢气体锌为原料,通过化学气相沉积制备了ＺｎＳ块材料,分析了ＺｎＳ的沉积过程研究了沉积参数中沉积温度、沉积区压力和硫化氢、锌蒸汽、载气氩气流量对ＺｎＳ厚度均匀性的影响规律,提出了改善ＺｎＳ厚度均匀性,抑制沉只表面球状物生长的途径。     

生长时间对纳米金刚石薄膜微结构的影响

文章研究了不同沉积时间下制备的不同厚度纳米金刚石薄膜的微观结构和相组成。采用热丝化学气相沉积法分别制备了沉积时间为52、67、97和127min的纳米金刚石薄膜。采用扫描电子显微镜和拉曼光谱表征薄膜的微观结构和相组成。结果表明,纳米金刚石薄膜表面颗粒尺寸大小无明显变化,约为50nm。随着生长时间增加,金刚石相含量保持稳定没有明显的增加或减小趋势,石墨相有序度以及石墨团簇尺寸随着生长时间增加而增加。     

Photoactivity enhancement of zinc sulfide ceramics thin films through ultrathin buffering engineering

Zinc-sulfide (ZnS) thin films 200 nm-thick with various crystal features were fabricated using RF sputtering onto patterned sapphire substrates with and without ultrathin homo-ZnS and hetero-zinc oxide (ZnO) ultrathin buffer layers (approximately 45 nm in thickness). Microstructural analyses revealed that the crystalline ZnS thin films with a columnar grain feature were deposited on the various ultrathin buffer layers-coated substrates through RF sputtering. The surface morphology of the ZnS thin films became rough and the crystal defect density of the ZnS thin films increased when the ZnS thin films were grown on the buffer layers. Comparatively, the rugged and island-like ZnO buffer layer engendered the crystal growth of the ZnS thin film with a higher degree of structural disorder than that of the crystal growth on the ZnS buffer layer. An increased crystal defect number together with the highly rugged film surface of the ZnS thin film buffered with ultrathin ZnO layers efficiently enhanced the photoactivity of the 200 nm-thick ZnS thin film in this study.     

Vapor deposition polymerization of synthetic rubber thin film in a plasma enhanced chemical vapor deposition reactor

Rubber is one of the most commonly used industrial materials worldwide. However, there is a gap in the literature on the production of rubber thin films in nanoscale. When the rubber thin films are produced in nanoscale, they can be used in high-tech applications where bulk rubbers have never been used before. This study is one of the first investigations to focus on the vapor-based production of the polyisoprene (PI), which is an important member of the synthetic rubber class. For this purpose, a single-step, rapid and environmentally friendly method based on plasma enhanced chemical vapor deposition (PECVD) was employed to produce PI thin films using 2-methyl-1,3-butadiene (isoprene). The high-vapor pressure of isoprene makes it a promising monomer for the production of chemical vapor deposition polymers. The effect of plasma processing parameters on the PI deposition rate was investigated. The deposition rate of PI thin film as high as 40 nm/min was achieved and the contact angle of PI coated bamboo surface was found to be 146.8°. The mechanical durability and laundering tests of PI thin films were performed. Based on this study results, PI thin films produced by PECVD can be used in a number of potential applications.     

Hydrogenated Silicon Carbonitride Thin Film Nanostructuring Using SF6 Plasma: Structural and Optical Analysis

Silicon - Hydrogenated silicon carbonitride thin films have been deposited on silicon substrates in a plasma enhanced chemical vapor deposition (PECVD) system using hexamethyldisilazane (HMDSN:...