Study of Intermetallic Growth and Kinetics in Fine-Pitch Lead-Free Solder Bumps for Next-Generation Flip-Chip Assemblies

With continued advances in microelectronics, it is anticipated that next-generation microelectronic assemblies will require a reduction of the flip-chip solder bump pitch to 100 μm or less from the current industrial practice of 130 μm to 150 μm. With this reduction in pitch size, and thus in bump height and diameter, the interaction between die pad metallurgy and substrate pad metallurgy becomes more critical due to the shorter diffusion path and greater stress. Existing literature has not addressed such metallurgical interaction in actual fine-pitch flip-chip assemblies. This work studies intermetallic growth and kinetics in fine-pitch lead-free solder bumps through thermal aging of flip-chip assemblies. Based on this study, it is seen that Ni from the die pad diffuses to the substrate pad region and Cu from the substrate pad diffuses to the die pad region, thus the resulting intermetallic compounds at the die and substrate pad regions are influenced by the other pad as well. Such cross-pad interaction is much stronger in fine-pitch solder bumps with smaller standoff height. It is seen that the die pad region contains Ni₃P and (Cu,Ni)₆Sn₅ after thermal aging, while the substrate pad region contains Cu₃Sn and (Cu,Ni)₆Sn₅. By digitally measuring the thickness of the interfacial phases, the kinetics parameters and the activation energy were calculated for the growth of (Cu,Ni)₆Sn₅ on the substrate side. The Cu diffusion coefficient through the intermetallic compound (IMC) layer was found to be 0.03370 μm²/h, 0.1423 μm²/h, and 0.4463 μm²/h at 100°C, 125°C, and 150°C, respectively, and the apparent activation energy for the growth of compound layers was 67.89 kJ/mol.     

Comparison of Sn-Ag-Cu Solder Alloy Intermetallic Compound Growth Under Different Thermal Excursions for Fine-Pitch Flip-Chip Assemblies

The intermetallic compound (IMC) evolution in Cu pad/Sn-Ag-Cu solder interface and Sn-Ag-Cu solder/Ni pad interface was investigated using thermal shock experiments with 100-μm-pitch flip-chip assemblies. The experiments show that low standoff height of solder joints and high thermomechanical stress play a great role in the interfacial IMC microstructure evolution under thermal shock, and strong cross-reaction of pad metallurgies is evident in the intermetallic growth. Furthermore, by comparing the IMC growth during thermal aging and thermal shock, it was found that thermal shock accelerates IMC growth and that kinetic models based on thermal aging experiments underpredict IMC growth in thermal shock experiments. Therefore, new diffusion kinetic parameters were determined for the growth of (Cu,Ni)₆Sn₅ using thermal shock experiments, and the Cu diffusion coefficient through the IMC layer was calculated to be 0.2028 μm²/h under thermal shock. Finite-element models also show that the solder stresses are higher under thermal shock, which could explain why the IMC growth is faster and greater under thermal shock cycling as opposed to thermal aging.     

塑料球栅阵列封装的热应力模拟

电子封装使用多种性能各异的材料,这些材料的热膨胀系数各不相同.把其组合成一个整体后,当温度变化时,在不同的材料界面会产生压缩或拉伸应力.建立了完全焊点阵列形式的模型,采用局部温度加载方式,对塑料球栅阵列封装的热应力进行了数值模拟.     

细间距陶瓷封装柱状阵列件组装工艺

CGA(陶瓷栅格阵列)封装件由于具有良好的散热性、高可靠性等优势,在军事、航天领域的应用正不断增多.从CGA件的封装结构、设计尺寸到装焊工艺进行了介绍和分析,对装配过程中的难点、关键点作出了说明和探讨.     

Impact of Electrical Current on the Long-Term Reliability of Fine-Pitch Ball Grid Array Packages with Sn-Ag-Cu Solder Interconnects

The interaction between electrical current and the long-term reliability of fine-pitch ball grid array packages with Sn-3.0Ag-0.5Cu (wt.%) solder ball interconnects is investigated. In this study, 0.4-mm fine-pitch packages with 300-μm-diameter Sn-Ag-Cu solder balls are used. Electrical current was applied under various conditions to two different package substrate surface finishes to compare the effects of chemically unmixed and mixed joint structures: a Cu/SAC305/Cu structure and a NiAu/SAC305/Cu structure, respectively. To study the thermal impact on the thermal fatigue performance and long-term reliability, the samples were thermally cycled from 0°C to 100°C with and without current stressing. Based on Weibull plots, the characteristic lifetime was degraded for the mixed joint structure, but little degradation was observed for the unmixed joint structure. The microstructure evolution was observed during constant current stressing and current stressing during thermal cycling. Accelerated intermetallic precipitation depletion at the package-side interface was observed in NiAu/SAC305/Cu structures due to current stressing, which was identified as the potential reason for the degradation in the thermal cycling performance.     

Evaluation on Influencing Factors of Board-Level Drop Reliability for Chip Scale Packages (Fine-Pitch Ball Grid Array)

Board-level drop testing is an effective method to characterize the solder joint reliability performance of miniature handheld products. In this study, drop test of printed circuit boards (PCBs) with a four-screw support condition was conducted for a 15 mm times 15 mm fine-pitch ball grid array (FBGA) package assembly with solder ball compositions of 36Pb-62Sn-2Ag and Sn-4Ag-0.5Cu on printed circuit board (PCB) surface finishes of organic solderability preservative, electroless nickel immersion gold, and immersion tin. Finite element modeling of the FBGA assembly was performed to study the stress-strain behavior of the solder joints during drop test. The drop test results revealed a strong influence of different intermetallic compound formation on soldered assemblies drop durability. The lead-based solder supersedes the lead-free composition regardless of the types of surface finish. Joints on organic solderability preservative were found to be strongest for each solder type. Other factors affecting drop reliability such as component location on the board and thermal cycling aging effects are reported. Finite element modeling results showed that a solder joint is more prone to failure on the PCB side, and the predicted solder joint stresses are location dependent. Predicted failure sites based on simulation results are consistent with experimental observations.     

球栅阵列器件及其清洗

球栅阵列技术已经激起了电子行业的人们强烈的兴趣。随着人们的目光愈来愈多地关注于BGA器件的组装的时候，对BGA器件进行组装时所产生的清洗和干燥的问题受到了人们广泛的关注，各种各样的BGA器件和焊膏需要采用合适的清洗处理方法。     

Impact of Isothermal Aging on Long-Term Reliability of Fine-Pitch Ball Grid Array Packages with Sn-Ag-Cu Solder Interconnects: Die Size Effects

The interaction between isothermal aging and long-term reliability of fine-pitch ball grid array (BGA) packages with two different die sizes was investigated. Both 5 mm × 5 mm and 10.05 mm × 10.05 mm die-attached packages with Sn-3.0Ag-0.5Cu (wt.%) solder balls were used to compare the correlation between the internal strain difference and isothermal aging on microstructural evolution during thermal cycling. To determine their long-term reliability, the samples were isothermally aged and thermally cycled from 0°C to 100°C with 10-min dwell time. Based on Weibull plots for each aging condition, the packages with large dies attached showed shorter characteristic lifetimes, because of the relatively higher stress, but showed less lifetime degradation with isothermal aging compared with the smaller die-attached samples. Microstructure analysis using orientation imaging microscopy (OIM) revealed the evolution of the microstructure during thermal cycling, showing a higher degree of recrystallization inside the bulk solder for joints that were isothermally aged and experienced higher stress. The possible mechanisms giving rise to these observations are discussed.     

Impact of Isothermal Aging on Long-Term Reliability of Fine-Pitch Ball Grid Array Packages with Sn-Ag-Cu Solder Interconnects: Surface Finish Effects

The interaction between isothermal aging and the long-term reliability of fine-pitch ball grid array (BGA) packages with Sn-3.0Ag-0.5Cu (wt.%) solder ball interconnects was investigated. In this study, 0.4-mm fine-pitch packages with 300-μm-diameter Sn-Ag-Cu solder balls were used. Two different package substrate surface finishes were selected to compare their effects on the final solder composition, especially the effect of Ni, during thermal cycling. To study the impact on thermal performance and long-term reliability, samples were isothermally aged and thermally cycled from 0°C to 100°C with 10 min dwell time. Based on Weibull plots for each aging condition, package lifetime was reduced by approximately 44% by aging at 150°C. Aging at 100°C showed a smaller impact but similar trend. The microstructure evolution was observed during thermal aging and thermal cycling with different phase microstructure transformations between electrolytic Ni/Au and organic solderability preservative (OSP) surface finishes, focusing on the microstructure evolution near the package-side interface. Different mechanisms after aging at various conditions were observed, and their impacts on the fatigue lifetime of solder joints are discussed.     

Microstructural Analysis of Reballed Tin-Lead,Lead-Free,and Mixed Ball Grid Array Assemblies Under Temperature Cycling Test

In this study, ball grid array (BGA) packages with Sn-3.0Ag-0.5Cu (SAC305) solder balls were reballed with Sn-37Pb solder balls. Three different reballing methods were used. The non-reballed lead-free BGAs were assembled with SAC305 and Sn-37Pb solder pastes to form the lead-free and mixed assemblies. The reballed Sn-Pb BGAs were assembled with Sn-37Pb solder paste to form the reballed Sn-Pb assemblies. All assemblies were subjected to a temperature cycling test with a temperature range of −55°C to 125°C. For the same component type, the reballed BGA assemblies showed similar temperature cycling reliability regardless of the reballing methods. However, the temperature cycling reliability of the reballed assemblies was worse than that of the mixed and the lead-free assemblies. The mean cycles-to-failure of the mixed assemblies was larger than or equal to that of the lead-free assemblies. Failure analysis revealed that the failure site in reballed Sn-Pb assemblies was located in the bulk solder at the component side regardless of the component type and the reballing method, indicating that the reballing method did not influence the crack propagation in reballed assemblies. The mixed assemblies had the same failure site as the lead-free assemblies, i.e., in the bulk solder at the component side. The microstructure differences between the tin-lead, lead-free, and mixed assemblies are also discussed in detail.     

BGA器件及其常见的形式

BGA器件不仅能够满足现在已有的其它组件所不能够提供的高性能、大量I/O数量的应用要求,也给如今的有引脚元器件提供了一种可靠的可替换方案。对于在组件体的底部位置安置有大量焊球阵列的BGA器件来说有四种主要的类型。表面阵列配置的组装技术将会成为电子组装业最主要的发展潮流。     

BGA封装技术研究

介绍了 BGA技术的研究现状 ,着重从芯片互连、基板材料及封装设计等方面讨论了该技术的发展前景。     

再成形(Re-Balled)焊球阵列封装的焊球强度评估

近年来,许多国家禁止在电子产品中铅的使用,但是一些特定产品拥有豁免权。拥有豁免权的电子产品生产厂商面临含铅元器件供应缺乏的现状,因此生产厂商开始寻求利用焊球再成形技术把焊球阵列封装中的无铅焊球转变为锡铅焊球。焊球再成形技术曾经被用于元器件的回收再利用,但是关于焊球再成形元器件的可靠性信息十分有限。介绍了利用焊球再成形技术使无铅焊球阵列封装转变为锡铅焊球阵列封装。两种焊球去除方法和两种焊球再贴装方法分别用于实现从无铅焊球到锡铅焊球的转变,用以调查再成形工艺对于封装质量的影响。热时效试验以及焊球强度评估用于检测焊球再成形工艺过程。     

再成形（Re—Balled）焊球阵魏封装的焊球强度评估

近年来,许多国家禁止在电子产品中铅的使用,但是一些特定产品拥有豁免权。拥有豁免权的电子产品生产厂商面临含铅元器件供应缺乏的现状,因此生产厂商开始寻求利用焊球再成形技术把焊球阵列封装中的无铅焊球转变为锡铅焊球。焊球再成形技术曾经被用于元器件的回收再利用．但是关于焊球再成形元器件的可靠性信息十分有限。介绍了利用焊球再成形技术使无铅焊球阵列封装转变为锡铅焊球阵列封装。两种焊球去除方法和两种焊球再贴装方法分别用于实现从无铅焊球到锡铅焊球的转变,用以调查再成形工艺对于封装质量的影响。热时效试验以及焊球强度评估用于检测焊球再成形工艺过程。     

Solder Ball Attachment Assessment of Reballed Plastic Ball Grid Array Packages

The ban of lead in consumer-based electronics by many countries has resulted in a dramatic reduction in the availability of electronic components with tin-lead terminations. With the uncertainty associated with lead-free reliability and the issues associated with mixing lead-free solder with tin-lead solder, medical, defense, and aerospace equipment manufacturers are examining and in some cases implementing reprocessing practices to convert lead-free terminations to tin-lead. For area array packages, the practice is referred to as reballing. While reballing has been used for part reclamation, very little information is available on the reliability of reballed parts. This paper presents lead-free ball grid array (BGA) packages subjected to two ball removal and two ball reattachment techniques. Solder attach strength was used as a metric to examine the reballing process. Both the ball shear test and the cold bump pull (CBP) test were used to test solder strength. The impact of isothermal aging was also examined. The solder strength of reballed BGAs remained at the same level when different reballing methods were used and under different aging conditions. The lead-free non-reballed BGAs had higher solder strength and wider strength distribution than reballed tin-lead BGAs. The pull strength increased as the pull speed increased in the CBP test.      

Thermomechanical Analysis of Plastic Ball Grid Arrays With Vapor Pressure Effects

This study adopts a mechanism-based computational approach to gain insights into the delamination and cracking of plastic ball grid array (PBGA) packages under moisture sensitivity test (MST) conditions. The possible crack paths in the molding compound are first examined by modeling the fully porous overmold with void-containing cell elements. These computational cells are governed by a Gurson constitutive relation, extended to account for vapor pressure effects. We show that the corner of the die/die-attach interface presents a likely site for crack initiation under MST conditions. Failure along this interface of interest is then examined by deploying a single row of computational cells along the die/die-attach interface. Under combined thermal and vapor pressure loading, delamination concurrently occurs at both the die corner and the die center; these competing damage sites lead to the rapid and complete delamination of the die/die-attach interfaces.      

焊球阵列封装及其返修工艺技术

在简介各种焊球阵列(BGA)封装形式的基础上,归纳出BGA封装的技术优势,包括引脚结构、封装尺寸和封装密度等,并分析了BGA封装的返修工艺技术.分析结果表明,BGA封装进一步缩小了IC的封装尺寸,提高了高密度表面贴装技术水平,因而顺应了LSI和VLSI新品轻薄、短小及功能多样化的发展方向.     

PBGA封装的可靠性研究综述

通过传统BT类型的PWB材料与独特的PWB材料来PBGA封装的可靠性。相关的研究结果表明,后者同样具有相同的热循环稳定性和回流焊期间的疲劳强度,并具有较低的封装翘曲特点;模塑料的低吸湿性及粘片材料的高粘附强度和高断裂强度特性,有利于提高回流焊期间的疲劳强度和防止剥离现象的扩散。     

倒装陶瓷球栅阵列电子封装的热分析

建立了倒装陶瓷球栅阵列(flip chip ceramic ball grid array,FC-CBGA)封装的三维热模型。在5 W热负荷下,比较了裸芯片式、盖板式和盖板加装热沉三种情况下芯片的热性能,进而分析了有无热沉和不同空气流速下,盖板式封装的具体热流分配情况。结果表明:在自然对流下,与裸芯片式相比,采用盖板式能使芯片结点温度降低约16℃,盖板加装热沉能使芯片结温降低47℃。芯片产生的热量大部分向上流向盖板,且随着空气流速的增加比例增大;由芯片流向盖板的热量有相当大一部分经过侧面流向基板,且随着流速增大比例较小。     

点胶球形阵列封装组件机械弯曲可靠性研究

本文对比了两组经不同材料充胶的BGA组件和一组未充胶BGA组件在机械弯曲中的可靠性,包括三点弯试验和机械弯曲疲劳试验。结果发现在机械弯曲可靠性试验中,U1、U2材料的填充均能提高焊点的机械弯曲可靠性,并且U1的效果更好。通过对试样剖面显微观察,发现在用U1充胶的样品中,失效发生在焊点、PCB板处;而在其它两组样品中,失效发生在焊点、PCB板和铜焊盘三处。