基于“魂芯一号”的雷达信号处理机设计

以4片"魂芯一号"国产高性能DSP处理器和FPGA为核心,设计了一种新型通用雷达信号处理机。处理机采用高速链路口实现4片DSP处理器之间的点对点通信,采用Altera公司的高端FPGA芯片作数据预处理和接口协议转换。该处理机具有很高的运算性能和数据交换能力,并具有较好的通用性、可重构性和扩展性。通过运算性能测试,并在信号处理机上实现某数字阵列雷达信号处理,验证了"魂芯一号"的性能和应用价值。     

基于“魂芯一号”的雷达信号处理机边扫设计

"魂芯一号"(BWDSP100)芯片是一款性能优越的高端DSP处理器,适用于雷达信号处理、电子对抗、精确制导武器、通信保障等领域。针对基于4片BWDSP100芯片和2片ALTERA公司的高端FPGA芯片设计的某雷达信号处理机,用边界扫描测试技术设计了TPS(Test Project Set),以验证BWDSP100芯片的可测试性。同时对该雷达信号处理机的DDR2、FLASH等外围芯片进行了测试有效性验证。经过验证,不仅BWDSP100芯片具有较好的可测试性设计,外围芯片的测试效果也很好,使得该雷达信号处理机有较高的故障覆盖率。     

基于“魂芯一号”的自适应截位浮点乘法实现

针对雷达信号处理中的高精度浮点矩阵运算的需求,设计了一种自适应截位的复数矩阵乘法的新算法,将浮点数据按照指定规则转化为定点格式,从而最大程度地保留计算精度,满足高精度算法的需求,并在国产高性能处理器———“魂芯一号”上编程实现。同时,将新算法分别与“魂芯一号”浮点算法、TS201浮点算法进行对比,新算法从精度和误差分布上都有明显优势,说明新算法是有效可行的,最终在某型号雷达上使用。     

基于国产DSP的步进频率综合宽带处理

步进频率综合宽带技术是一种易于雷达工程实现的距离高分辨技术。但步进频率工作体制对目标的运动十分敏感,若不作速度补偿处理则最终综合成像处理结果将发生错误,因而步进频率综合宽带处理需包含速度补偿等一系列关键处理流程。首先阐述了步进频率综合宽带距离像的原理以及目标运动带来的影响,分析信号处理整体流程并提出基于相位差分-IFFT的速度估计算法。依据国产"魂芯一号"DSP平台进行最优化软件设计,提供了一种基于国产DSP的步进频率综合宽带处理实时系统方案。     

一种X波段多普勒天气雷达信号处理器的研制

介绍了一种X波段多普勒天气雷达信号处理器的设计,给出了硬件系统和软件系统的基本构成并对基本算法及一些处理方法作了描述。     

一种基于网络传输的多普勒天气雷达信号处理器的设计

介绍了一种具备网络传输能力的多普勒天气雷达信号处理器的设计,给出了其基本算法和信号处理流程,并对数据的网络传输作了讨论。     

实验型多功能可编程高速雷达数字信号处理系统

实验型多功能可编程高速雷达数字信号处理系统采用先进高速通用信号处理芯片做主处理器；高速专用信号处理芯片做加速处理器构成多指令多数据流（ＭＩＭＤ）并行阵列处理系统，能适应于复杂干扰环境下多功能雷达高速自适应信号处理器的设计要求。系统具有多功能高速信号处理能力和模块化灵活构型的拓扑结构，便于映射广泛的先进雷达信号处理算法，系统具有批处理和流水处理两种方式，信号速率达１０Ｍ／ｓ。本文对系统总体方案及其硬件实现做了详细论述。     

脉间二相编码雷达高度表信号处理器的设计及FPGA实现

本文就一种应用于雷达高度表的脉间二相编码信号频域处理方法的FPGA实现进行了研究。特别就信号处理器硬件参数的选择及有限字长对处理性能影响给予了一定论述和分析,这些方法对雷达高度表信号处理器定点硬件的设计都有一定的借鉴价值。本文虽后给出了该信号处理器针对点、面目标回波处理的实测结果。结果表明该处理方法具有较高的处理增益和良好的检测性能。     

基于DSP的雷达目标检测模块设计

高性能信号处理器芯片ADSP-TS101广泛应用于复杂雷达信号处理系统的设计中.本文分析了动目标检测(MTD)和恒虚警检测(CFAR)的原理,对其性能进行了讨论,并根据实际情况做了算法改进和优化,最后在基于四TS101雷达信号处理板上完成系统的设计实现.     

介绍一种新型高性能的可编程ASIC--FPNA

本文介绍近年来在国外推出的可编程节点阵列芯片:FPNA(FieldProgrammableNodeAr-rays)。FPNA芯片结合了信号处理器与FPGA配合设计的灵活性及ASIC的高性能,其杰出性能已在一些项目的建设上得到了验证。在不远的将来,基于FPNA的设计必将占领更广阔的高端专用系统设计市场,希望本文能引起IC设计界同行的注意。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.