Ca10K（PO4）7:Eu3+红色荧光粉的制备及其发光性质

高温固相法合成了Ca10-xK(PO4)7:xEu3+(x=0.02,0.04,0.06,0.08,0.10,0.12,0.14和0.16)的红色荧光粉。X射线衍射表明,样品具有标准的Ca10K(PO4)7六角晶体结构,且无第二相存在。在393nm的波长激发下,样品获得由Eu3+的4f-4f跃迁产生红光发射,其中以613nm附近的5 D0→7F2电偶极跃迁发射为最强。通过调节Eu3+的掺杂浓度,获得了色坐标与商业化Y2O2S:Eu3+荧光粉十分接近的接近纯色的红色荧光粉。Ca10K(PO4)7:Eu3+是一种可望应用于紫外激发的白光LED的红色荧光粉。     

Eu3+掺杂对Li2BaSiO4荧光粉发光性能的影响

采用凝胶-燃烧法制备了Li2BaSiO4∶Eu3+红色荧光粉。用X射线衍射分析(XRD)表征了Li2BaSiO4∶Eu3+荧光粉的结构,重点考察了激活剂Eu3+的浓度对Li2BaSiO4∶Eu3+发光强度的影响。结果表明,Li2BaSiO4∶Eu3+荧光粉为六方晶系结构。以394nm的近紫外光激发样品,Li2Ba1-xSiO4∶xEu3+荧光粉发红光,其中以614.4nm发射峰发光最强。在800℃灼烧3h条件下,当Eu3+的浓度为5.5%时,Li2BaSiO4∶Eu3+荧光粉的发光性能最佳。Eu3+的掺杂对Li2BaSiO4∶Eu3+荧光粉的发射光谱的峰形和峰位无明显影响。     

CaMoO_4:Eu~(3+)红色荧光粉化学共沉淀合成与表征

以NH4HCO3-NH3·H2O为混合沉淀剂,采用化学共沉淀法制备CaMoO4:Eu3+红色荧光粉.通过TG-DTA和XRD研究CaMoO4:Eu3+前驱体的热分解和晶相形成过程;采用SEM和PL表征了该荧光粉的表面形貌和发光性能,并与NH4HCO3沉淀剂、NH3·H2O沉淀剂合成的CaMoO4:Eu3+荧光粉以及高温固相法制备的荧光粉进行对比.结果表明,煅烧温度700℃时,前驱体能够完全转换成单一CaMoO4:Eu3+白钨矿结构;煅烧温度900℃制备的荧光粉发光强度达到最大值;采用混合沉淀剂制备的荧光粉大小均匀、无团聚、呈类球型,平均粒径0.9μm.与高温固相法比较,其激发光谱中的Eu-O电荷迁移带向长波方向微小移动,而7F0→5L6(394nm)和7F0→5D2(465nm)的强电子吸收能有效改善红色荧光粉使用性能;与单独的NH4HCO3或NH3·H2O沉淀剂或高温固相法相比,该荧光粉发光性能显著改善,发光强度为传统固相法的2倍.     

钒硼酸钇铕荧光粉的真空紫外光谱特性研究

采用高温固相法合成了YBχV1-χO4-χ：Eu^3＋荧光粉,利用XRD变温发射光谱以及真空紫外激发的光谱对其进行研究。结果表明,在147nm的真空紫外光激发下,荧光粉的发射主峰位于619nm,与（Y,Gd）BO3：Eu^3＋相比,色纯度较好,发光亮度达86％,是彩色PDP用红色荧光粉的候选材料。     

红色发光粉Li_2MSiO_4∶Eu~(3+)(M=Ba,Sr)的合成与光谱性能

采用凝胶-燃烧法制备Li2MSiO4∶Eu3+(M=Ba,Sr)红色荧光粉。该荧光粉为六方晶系结构。以395nm的近紫外光激发样品,Li2MSiO4∶Eu3+荧光粉发红光。当Eu3+掺杂摩尔分数x在0.05~0.4的范围内时,随Eu3+浓度的增加,发光强度增加,当x=0.3时达到最大值,x继续增加时,出现浓度猝灭现象。Li2Ba0.7SiO4∶0.3Eu3+比Li2Sr0.7SiO4∶0.3Eu3+发光亮度提高20%。该荧光粉能够有效吸收395nm附近的近紫外光,适合做350~410nm InGaN管芯激发的白光LED用红色荧光粉。     

Eu2+、Dy3+、Li+共掺杂CaSi2O2N2荧光粉的发光性能

采用高温固相反应法制备了一系列白光LED用CaSi2O2N2:0.05Eu2+,xDy3+,xLi+(0≤x≤0.03)荧光粉.利用X射线衍射仪对样品的物相结构进行了分析,结果表明:Dy3+和Li+离子的掺入没有改变CaSi2O2N2:Eu2+荧光粉的主晶相.利用荧光光谱仪对样品的发光性能进行了测试,发现所有样品的激发光谱均覆盖了从近紫外到蓝光的较宽范围,400 nm激发下得到的发射光谱为宽波段的单峰,峰值位于545 nm左右,是Eu2+离子5d-4f电子跃迁引起的.Dy3+离子掺杂可以提高CaSi2O2N2:Eu2+荧光粉的发光强度,Dy3+与Li+共掺杂可进一步提高荧光粉的发光强度,当Dy3+和Li+的掺杂量为1mol%时,荧光粉的发光强度达到最大值,是单掺杂Eu2+的荧光粉发光强度的157%.     

Eu3+掺杂Bi4Si3O12材料的制备和发光特性（英文）

采用传统的固相合成法制备了Eu3+掺杂的Bi4Si3O12发光材料.使用X射线粉末衍射技术对制备的发光粉体进行了表征.Eu3+掺杂的Bi4Si3O12材料的激发谱表明,在265 nm处强而宽的谱带对应于Eu3+→O2-之间的电荷转移跃迁带.在用紫外光激发的荧光光谱中,Eu3+掺杂的Bi4Si3O12材料在614 nm处有强的红光发射.材料的激发和发射光谱结果表明,Eu3+掺杂的Bi4Si3O12有望做为红色固体发光的候选材料.     

近紫外白光LED用红色荧光粉In2（MoO4）3:Eu3+,Bi3+的合成及发光性能

通过固相反应法在1000℃空气气氛中合成了In2(MoO4)3:Eu3+、Bi 3+红色荧光粉。粉体分别用X射线衍射(XRD)、荧光分度计测试。结果表明制备的荧光粉具有单相立方晶体结构,该荧光粉能够被近紫外光(395nm)有效激发,发射高强度的612nm红光。Eu3+浓度为40%(摩尔分数)时,In2(MoO4)3:Eu3+发光强度较高。In2(MoO4)3:0.4Eu3+、Bi 3+荧光粉,Bi 3+浓度为3%(摩尔分数)时,发光强度最大,高于没有掺Bi 3+的In2(MoO4)3:0.4Eu3+荧光粉。和CaMoO4:Eu3+相比,In2(MoO4)3:0.4Eu3+、0.03Bi 3+有较高的发光强度。因此,In2(MoO4)3:0.4Eu3+、0.03Bi 3+是一种可能应用于近紫外白光LED的新型红色荧光粉。     

红色长余辉材料Y2O2S:Eu3+,Si4+,Zn2+的微波合成及性能研究

采用微波法合成了红色长余辉发光材料Y2O2S:Eu3+,Si 4+,Zn2+,研究了微波辐射功率和加热时间对制备Y2O2S:Eu3+,Si 4+,Zn2+的影响。并且对样品进行了XRD、SEM、荧光光谱和热释光谱等表征。XRD测试表明所制备的Y2O2S:Eu3+,Si 4+,Zn2+为单相,六方晶系;荧光光谱测试表明,用λem=626nm作为监控波长,在200～400nm之间有宽的激发光谱,峰值位于325nm。而发射光谱的谱线较窄,来源于Eu3+的5 D0→7F2跃迁的发射峰627.0nm最强。其中以辐射功率为750w,反应时间为25min所制备的样品发光性能最好。     

水热法制备SrMoO4:Eu3+红色发光材料及其发光性能

以Eu2O3、Sr(NO3)2和(NH4)6Mo7O24.4H2O为原料,采用水热法合成了Eu3+离子掺杂的Sr0.6MoO4∶Eu0.43+红色荧光粉。用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)和荧光光谱(PL)等分析手段研究了荧光粉的结构和光致发光性能。结果表明,制备的荧光粉颗粒分散均匀,形状呈类四方双锥状,粒径在0.5～2μm之间,荧光粉可以被近紫外光(396nm)和蓝光(466nm)有效激发,发射出峰值位于614nm的红光,激发波长与紫外和蓝光LED芯片相匹配。因此,这种荧光粉是一种可能应用在白光LED上的红色荧光粉材料。     

Magnetic coupling in La0.67Ca0.33MnO3/La0.67Sr0.33CoO3/La0.67Ca0.33MnO3 sandwiches

La_0.67Ca_0.33MnO₃ (LCMO)/La_0.67Sr_0.33CoO₃ (LSCO)/LCMO trilayer films are fabricated on single-crystal substrates NdGaO₃ (110) and the interlayer coupling are investigated. Compared with LCMO single layer, sandwiches showed the enhanced metal-insulator transition temperature of LCMO layers. The magnetoresistance is dependent on spacer thickness and the peak value dramatically decreases when LSCO layer is thick enough because of shorting by the LSCO layer. The magnetic coercivity H_C shows a nonmonotonic behavior with changing spacer layer thickness and the waist-like hysteresis indicates that there is an indirect exchange coupling between the top and bottom LCMO layers across the spacer layer.     

Varistor properties of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-In2O3 ceramics

The varistor properties of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-In₂O₃ ceramics were investigated for different concentrations of In₂O₃. The increase of In₂O₃ concentration slightly increased the sintered density (5.60-5.63 g/cm³) and slightly decreased the average grain size (3.4-2.9 μm). The breakdown field increased from 6023 to 14822 V/cm with increasing concentration of In₂O₃. The nonlinear coefficient increased from 17.6 to 44.6 for up to 0.005 mol%, whereas the further doping caused it to decrease to 36.8. In₂O₃ acted as an acceptor due to the donor concentration, which decreases in the range of 1.02 × 10¹⁷ to 0.24 × 10¹⁷/cm³ with increasing concentration of In₂O₃.     

Nanocrystallization of SrBi2Nb2O9 from glasses in the system Li2B4O7---SrO---Bi2O3---Nb2O5

Transparent glasses in the system (100−x)Li₂B₄O₇–x(SrO---Bi₂O₃---Nb₂O₅) (10≤x≤60) (in molar ratio) were fabricated by a conventional melt-quenching technique. Amorphous and glassy characteristics of the as-quenched samples were established via X-ray powder diffraction (XRD) and differential thermal analyses (DTA) respectively. Glass–ceramics embedded with strontium bismuth niobate, SrBi₂Nb₂O₉ (SBN) nanocrystals were produced by heat-treating the as-quenched glasses at temperatures higher than 500 °C. Perovskite SBN phase formation through an intermediate fluorite phase in the glass matrix was confirmed by XRD and transmission electron microscopy (TEM). Infrared and Raman spectroscopic studies corroborate the observation of fluorite phase formation. The dielectric constant (_r) and the loss factor (D) for the lithium borate, Li₂B₄O₇ (LBO) glass comprising randomly oriented SBN nanocrystals were determined and compared with those predicted based on the various dielectric mixture rule formalism. The dielectric constant was found to increase with increasing SBN content in LBO glass matrix.     

Syntheses of hollandite type Rb2Cr8O16, K2Cr2V6O16 and K2V8O16

Hollandite-type compounds, Rb₂Cr₈O₁₆, K₂Cr₂V₆O₁₆ and K₂V₈O₁₆, were synthesized under high P-T conditions up to 1200°C and 7GPa. The structural refinement using a single crystal of Rb₂Cr₈O₁₆ confirms that the structure is similar to that of K₂Cr₈O₁₆. Magnetic measurements indicate that Rb₂Cr₈O₁₆ is ferromagnetic below 295K, K₂Cr₂V₆O₁₆ paramagnetic down to 77K and K₂V₈O₁₆ has susceptibility anomaly at 175K. These compounds are all semiconductive and show discontinuities in temperature-resistivity curves at points corresponding to magnetic anomalies.     

PbSbBiS4-Sb2S3 and PbSbBiS4-Bi2S3 joins in the PbS-Sb2S3-Bi2S3 system

Phase equilibria along the PbSbBiS₄-Sb₂S₃ and PbSbBiS₄-Bi₂S₃ joins of the PbS-Sb₂S₃-Bi₂S₃ system have been studied for the first time using differential thermal analysis, X-ray diffraction, microstructural analysis, microhardness tests, and density measurements, and the phase diagrams of the joins have been mapped out. The joins are shown to be pseudobinary with limited series of terminal solid solutions. The solid solutions are p-type semiconductors.     

Microstructures of YBa2Cu3O7/La0.7Ca0.3MnO3 and La0.7Ca0.3MnO3/YBa2Cu3O7 bi-layers grown on (001)LaAlO3

Epitaxial YBa₂Cu₃O₇/La_0.7Ca_0.3MnO₃ (YBCO/LCMO) bi-layers and La_0.7Ca_0.3MnO₃/YBa₂Cu₃O₇ (LCMO/YBCO) bi-layers were grown on (001)LaAlO₃ by pulsed laser deposition, and their microstructures were compared by transmission electron microscopy investigation. In the YBCO(100 nm)/LCMO(150 nm) bi-layers, the LCMO layer consists of columnar grains of ~ 17 nm in diameter and contains mixed orientation domains of [100]_c, [010]_c and [001]_c. The YBCO layer is totally c-axis oriented and the YBCO lattices are tilted − 2.5° to + 2.5° as they grew on the rough surfaces of LCMO columnar grains. For the LCMO(140 nm)/YBCO(140 nm) bi-layers, the LCMO/YBCO interface is sharp and flat. The initial 12-nm thickness of the YBCO layer is composed of c-axis oriented domains, and the upper part of YBCO layer is [100] oriented. The LCMO layer was predominantly [001]_c oriented while [100]_c-oriented domains were occasionally observed.     

Vapour-liquid equilibria in the ternary mixtures N2---CH4---C2H6 and N2---C2H6---C3H8

A systematic study was performed with mixtures consisting of N₂, CH₄, C₂H₆ and C₃H₈, to investigate experimentally phase equilibria and caloric properties and to test the accuracy of thermodynamic correlations. The first part of this Paper reports results of T---p---x---y measurements on ternary systems in the range 20 < p < 120 bar and 140 < T < 220 K. The results are compared with data calculated by generalized equations of state.     

Characterization of YBa2Cu3O7/PrBa2Cu3O7 superlattices

We investigated the structural and superconducting properties ofc-axis oriented (YBa₂Cu₃O₇) _nY /(PrBa₂Cu₃O₇) _npr superlattices with thicknesses of the individual layers down to one unit cell (10nY1; 18>nPr 1). By transmission electron microscopy and X-ray diffraction we find an excellent structural quality of the samples, though the quantitative analysis shows the existence of defects. In superlattices with decoupled YBa₂Cu₃O₇ layers of two unit cell thickness we find a highT _c value of 75 K. We probed the flux line structure in the superlattices by measurements of the critical current density in magnetic fields. The experiments show that the flux-line dynamics is dominated by the movement of pancake vortices.     

Structural study of Sr0.3Ba0.7Nb2O6 and La0.030Sr0.255Ba0.700Nb2O6 ceramic systems

Sr_0.3Ba_0.7Nb₂O₆ (SBN) and La_0.030Sr_0.255Ba_0.700Nb₂O₆ (LSBN) ceramic compounds have been prepared using the traditional ceramic method at two different calcination temperatures (900 and 1000 °C) and later sintered both at 1400 °C. A study of the effects of the calcination temperatures and La substitution on the morphological, compositional, and structural properties of SBN and LSBN is presented using scanning electronic microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD) analysis. From Rietveld refinement processes, the XRD patterns were interpreted to evaluate such effects in the structural parameters and the site occupation factors of the heavy metals and oxygen atoms. The effect of the incorporation of La resulted in a 0.25% cell contraction and turned out to be higher than the 0.08% dilation effect produced by the increase of calcination temperature. The La ion with similar effective ionic radius and higher electronegativity is incorporated into the structure occupying the A₁ site just like the Sr ions in the SBN compound. Differences in the site occupation factors between the SBN and LSBN samples lead to substantial changes in the physical properties such as temperature of relative dielectric constant maximum, relative dielectric constant, and dielectric loss, correlated with the distortion and the relative orientation of the oxygen octahedra.     

The effect of Bi1.5Zn0.5Nb0.5Ti1.5O7 cover layer on the dielectric and tunable properties of Ba0.6Sr0.4TiO3/Bi1.5Zn0.5Nb0.5Ti1.5O7 bilayered thin films

Bi_1.5Zn_0.5Nb_0.5Ti_1.5O₇ (BZNT) thin films with different thicknesses as cover layers were deposited on the Ba_0.6Sr_0.4TiO₃ (BST) thin films on the Pt/Ti/SiO₂/Si substrates by radio frequency magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of BST/BZNT heterogeneous bilayered films were investigated as a function of the thickness of BZNT films and the effect of BZNT films on the asymmetric electrical properties of BST/BZNT bilayered films was discussed. It was found that BZNT cover layer significantly improved the leakage current and the dielectric loss, and the dielectric constant and tunability of BST/BZNT bilayered thin films simultaneously decreased with the increasing thickness of BZNT films. The BST/BZNT bilayered thin film with a 50 nm BZNT cover layer gave the largest figure of merit (FOM) of 33.48 with the upper tunability of 55.38%. The asymmetric electrical behavior of BST/BZNT bilayered films is probably related to an internal electric field caused by built-in voltages at Pt/BST and BZNT/Au interfaces.