AC-PDP放电空间静态电场的定量分析

三电极表面放电型ＡＣ－ＰＤＰ具有复杂的电极结构,其气体放电过程是在周期性的非均匀空间电场中进行的,正确估算不同脉冲电压条件下空间静电场的分布,对于分析理解ＰＤＰ放电过程及其基本特性有着重要的意义。本文利用数值计算方法在正确分析放电单元边界条件的基础上,通过求解系统拉普拉斯方程的定解问题,给出不同显示过程电场分布的数值结果并讨论它对显示特性的影响。     

单基板彩色AC—PDP放电单元的二维数值模拟

介绍了基于粒子流运动连续方程建立的二维单基板彩色ＡＣ－ＰＤＰ放电单元的数值计算模型，该模型包括混合气体中的电子，离子，激发态分子等１５种基本粒子，描述了粒子的反应，迁移和扩散过程，通过模拟单基板彩色ＡＣ－ＰＤＰ放电单元的工作情形，给出了单元内电位，电子和离子浓度的分布情况。     

具有壁阴极和壁辅助阴极的高效DC—PDP单元结构

本文提出了一种具有壁阴极和壁辅助阴极的新型黑白ＤＣ－ＰＤＰ单元结构，这种壁阴极有一个足够的放电电极区域可使放电量最大化。壁辅助阴极围绕着放电区，有效地控制放电区内的带电颗粒。我们用二维计算机模拟对新单元结构进行了研究，进行了测试屏方面的试验，把结构与以前的具有共面阳极和辅助阳极的单元结构进行了比较。重点放在放电特性方面的壁辅助阳极对放电特性的影响上，这种新型单元结构显示出高亮度，改进了放电特性，放     

介质保护膜对AC-PDP放电特性影响测量装置的研究

本文提出并采用了测量ＡＣ ＰＤＰ放电特性和加速老化特性来探求保护膜发射和稳定性能的间接测量方法,研制了模拟ＡＣ ＰＤＰ放电特性测量装置。该装置驱动电源、放电室及真空系统组成,能够模拟ＡＣ ＰＤＰ的工作条件和过程,不仅可用来测量不同材料和不同方法、工艺制成的保护膜对ＡＣ ＰＤＰ工作电压、寿命等的影响,还可用来测量ＡＣ ＰＤＰ放电单元内所充气体的种类,气体混合比例、压力以及放电间隙的距离等参数对ＡＣ     

AC PDP多脉冲放电特性一维流体模型的数值分析

本文建立了ＡＣ ＰＤＰ单元放电的一维流体模型,对ＡＣ ＰＤＰ单元的多脉冲放电特性进行了数值分析,模型是基于对电子和离子输运的二元流体描述,包括各种粒子的连续性方程和简单的动量舆方程以及Ｐｏｉｓｓｏｎ方程和电路方程计算过程中,假定放电气体为Ｈｅ且处于局域平衡状态,各种粒子的反应几率设为Ｅ／Ｐ的函数,通过Ｂｌｏｔｚｍａｎｎ方程解出,模拟了在５０ｋＨｚ方民压驱动下发生在ＡＣ ＰＤＰ单元内的多脉冲放电行为     

单元结构和维持电压对表面放电型AC-PDP光电特性的影响

单元结构和维持电压对ＡＣ－ＰＤＰ的性能有非常大的影响。依据国内外研究人员所做的相关实验,全面总结了这两方面因素对表面放电型ＡＣ－ＰＤＰ光电特性的影响,并从理论上给予解释。最后归纳出表面放电型ＡＣ－ＰＤＰ单元结构的设计步骤和确定维持电压的原则。     

真空紫外测试技术在彩色等离子体显示中的应用

叙述真空紫外测量技术的特点和它在彩色ＰＤＰ测量中的应用，测量了双基板型单元和单基板型单元的瞬态放电过程，得出两种单元的放电延时分别为０．６μｓ及１．１μｓ。     

交流彩色等离子体显示器（Ⅱ）

交流彩色等离子体显示器（Ⅱ）７１００４９西安交通大学电子物理与器件研究所张军凯孙鉴３单基板ＡＣＰＤＰ中的关键技术多年来，为使ＡＣＰＤＰ实现大屏幕、高清晰度、高亮度和高光效，研究人员进行了大量的探索与研究。主要包括：（１）对ＡＣＰＤＰ放电单元结构、电极...     

采用建模方式作为优化PDP显示单元的工具

我们讨论的模型原理用于模拟ＰＤＰ放电单元。要成为工程设计和优化的工具，模拟必须足够快，这样才能在合理的计算时间内描述二维（或三维）空间放电脉冲的时序状态。因此在模型的简单化与精确性之间进行优化是很重要的。本文提出了一些合理的近似处理方法，用于Ｎｅ－Ｘｅ混合气体下的表面放电单元的微放电建模。我们还将说明模型如何能够帮助人们更好的理解气体放电的物理过程和优化工作条件。     

AC PDP单元中He—Xe放电动力学的分析

用图像增强ＣＣＤ摄像机测量了单向表面放电型ＡＣ ＰＤＰ单元中Ｘｅ＾＊（３Ｐ１）共振发射的１４７ｎｍ ＶＵＶ以及Ｈｅ－Ｘｅ放电产生的连续光谱的时间变化。共振辐射的详细测量呈现出强压力增宽，快速升到它的峰值以及具有多时间常数衰减的现象。衰减时间常数，共振相对强度和二聚物辐射是随总气压以及Ｘｅ含量的变化而变化的，这就意味着：碰撞激发， 激     

On computation of electromagnetic fields on planar surfaces from fields specified on nearby surfaces

A technique is presented for solution of the inverse problem of calculating the electric field on a planar surface from the electric field specified on a nearby surface. An integral equation is derived that relates two orthogonal components of the electric field on the nearby surface to the respective components of the plane wave spectrum of the planar electric field. The integral equation is solved by an iterative technique, and the planar near field is calculated by an inverse Fourier transform of the plane wave spectrum.     

Substrate current characterization and optimization of high voltage LDMOS transistors

A 30-V LDMOS integrated with a standard 0.15 μm CMOS process is investigated for its double-hump substrate current (I_b) characteristics. The origin of this abnormal second substrate current hump is explained by Kirk effect. The impact of this second hump of I_b on reliability and device performance is observed. An analytical expression for the second hump of I_b is established by calculating the impact ionization in the drift region according to the electric field distribution obtained by solving Poisson’s equation. The calculated results are compared against the silicon data under various gate/drain bias voltages showing excellent consistency. Additionally, based on the derived expressions for substrate current, the process parameters are optimized achieving much lower substrate current and better reliability performance.     

Radiation from a dielectric coated hemispherical conductor fed by acoaxial transmission line

A dielectric-coated hemispherical conductor mounted on an infinite perfectly conducting ground plane and fed by a coaxial transmission line is investigated. Green's functions for the region above the ground line are derived with separated homogeneous and particular solution parts so as to be compatible with numerical analysis techniques. A magnetic field integral equation is constructed in terms of the unknown annular aperture tangential electric field and is solved by the method of moments. A comparison of the characteristics of the dielectric-coated hemispherical conductor and a flush-mounted coaxial line to an infinite homogeneous region above the ground plane is presented with respected to the tangential aperture electric field, with respect to the tangential aperture electric field, the coaxial line apparent input impedance, and the far radiated field     

A tetrahedral modeling method for electromagnetic scattering by arbitrarily shaped inhomogeneous dielectric bodies

A method for calculating the electromagnetic scattering from and internal field distribution of arbitrarily shaped, inhomogeneous, dielectric bodies is presented. A volume integral equation is formulated and solved by using the method of moments. Tetrahedral volume elements are used to model a scattering body in which the electrical parameters are assumed constant in each tetrahedron. Special basis functions are defined within the tetrahedral volume elements to insure that the normal electric field satisfies the correct jump condition at interfaces between different dielectric media. An approximate Galerkin testing procedure is used, with special care taken to correctly treat the derivatives in the scalar potential term. Calculated internal field distributions and scattering cross sections of dielectric spheres and rods are compared to and found in agreement with other calculations. The accuracy of the fields calculated by using the tetrahedral cell method is found to be comparable to that of cubical cell methods presently used for modeling arbitrarily shaped bodies, while the modeling flexibility is considerably greater.     

The annular aperture antenna with a hemispherical center conductor extension

An annular aperture antenna mounted on an infinite ground plane and containing a hemispherical center conductor extension above the ground plane is investigated. A Green's function for the region above the ground plane is derived so as to be compatible with numerical solution techniques. A magnetic field integral equation is obtained in terms of the unknown tangential aperture electric field and is solved by the method of moments. A comparison between flush mounted and hemispherically extended annular aperture antennas is presented for the tangential aperture electric field, the coaxial line apparent input admittance, and the far radiated field.     

Variational analysis of inclined slots in the narrow wall of arectangular waveguide

A variational analysis for calculating the admittance of the inclined slots in the narrow wall of a rectangular waveguide is presented. The analysis uses the 90° wedge Green's function to model the scatterings off the waveguide corners and assumes an equiphase half-cosinusoidal electric field distribution along the slot aperture. Based on these, a variational equation is derived for the reflection coefficient due to the slot discontinuity, from which the slot admittance is calculated. Through comparisons between the computed results and the literature results, the analysis is found to be accurate, reliable, and efficient     

A novel implicit time-domain boundary-integral/finite-elementalgorithm for computing transient electromagnetic field coupling to ametallic enclosure

A time-domain boundary-integral/finite-element algorithm for transient electromagnetic field coupling into an enclosure (cavity) is developed. The model is based on a finite-element technique, which is coupled to the exterior region through the H-field integral equation directly in the time domain. The global electric field, throughout the interior region is driven by the tangential magnetic field over the outer surface of the enclosure. The tangential magnetic field, in turn, is related to the time-dependent incident pulsed field, and the tangential electric field over the surface of the enclosure. Hence, the electric and magnetic fields are coupled at the surface of the enclosure; the coupled equations are solved by a leap-frogging technique. Numerical based on the time-dependent finite-element/boundary-integral implicit scheme are compared with measurements. Some novel features of the newly developed algorithm are also presented     

用基于WEFD的微扰法计算谐振腔的Q值

对波动方程差分（WEFD）解法进行了研究,给出了电场的计算公式.将它应用于谐振腔Q值的分析,得到了与理论值吻合得很好的结果.     

A comparison of integral equations with unique solution in theresonance region for scattering by conducting bodies

A comparison of integral equations, for problems involving scattering by arbitrary-shape conducting bodies, having a unique solution in the resonance region is presented. The augmented electric and magnetic field integral equations and the combined field integral equation, in their exact and approximate versions, are considered. The integral equations and the basis and test functions used in the method of moments to solve them are reviewed. Their implementation in a computer code is analyzed, mainly the relation between the matrix properties and the CPU time and memory. Numerical results (condition number and backscattering cross section) are presented for the cube. It is shown that the combined field integral equation, and the approximate (symmetric) combined field integral equation, are the most efficient equations to use in the neighborhood of resonant frequencies, because the overdetermined augmented integral equations require an extra matrix multiplication     

An analytical model for minimum drift region length of SOI RESURFdiodes

An analytical model for calculating the minimum drift region length of SOI RESURF diodes is presented with an expression for the maximum breakdown voltage of the device. The minimum drift region length is determined from the condition that the maximum breakdown voltage due to the one-dimensional field along the vertical path equals that of the lateral electric field along the surface. Analytical results agree well with the simulations using PISCES II, and qualitatively with the experimental results