TEM模场的空间不均匀性对场-电子注互作用的影响

电磁波与电子注的互作用不仅与电子注的特性有关,也与波场的极化、空间特性紧密相关。本文就小回旋电子注的情况采用由4个运动常数描述的未扰分布函数,根据动力学理论一般地分析了TEM模场空间不均匀性对互作用的影响,所得结果表明互作用产生的高次谐波依赖于波场空间不均匀性;电子注的位置空间不均性和场的空间不均匀性有可能共同产生一种新的不稳定性,该不稳定性与相对论效应无关。     

磁自聚焦电子注的空间轨迹及传输特性

本文给出了充等离子体微波管漂移区电子运动的空间轨迹方程，根据电子运动特性沿径向将空间划分为三个区域，利用数值方法分别求解非相对论和相对论条件下的空间轨迹，并详细阐述了注的传输特性。讨论了影响电子注传输质量的因素。     

相对论回旋电子注与驻波场互作用的数值计算

本文从相对论电子运动的基本方程推导出横电(TE)模式下回旋电子注速度相位空间的运动方程。它们适合于回旋振荡管互作用空间的数值计算。对于频率为10GHz的变截面腔TE_(011)场型,工作在回旋基波的回旋振荡管的计算,获得了电子效率为57％和轨道效率为72％的结果。对于频率为35GHz均匀截面腔TE_(021)场型,二次回旋波的回旋振荡管得到了电子效率为26％和轨道效率为40％的结果。文中还讨论了开放式谐振腔纵向场分布函数G(T)、腔体内场幅E_0、电子注半径R_b和轴向磁场B_0等因素对回旋管参量的影响,并给出了相应的结果。     

电子注波动效应对奥罗管性能的影响

在具有长互作用空间和开放式周期结构的 O 型器件中,电子注和场之间相互作用发生在一层直接靠近周期结构的薄层上,其厚度比周期结构小几倍。根据线性奥罗管理论,意味着需要有一个无限大的聚焦磁场,使电子注沿轴向运动。实用器件磁场量是有限的,并且,具有横向运动的电子。这些电子对奥罗管性能可能有显著的影响。横向扰动的电子轨迹由两种因素决定:(1)电子注和高频场横向分量之间相互作用,(2)阳极槽的中断作用。通过高频横向分量的影响、电子注和高频场之间能量交换以及初始电流的分析,为我们能够对这类 O 型超高频器件(如奥罗管、奥罗管—变换器以及谐振返波管等)提供下述的最后结论:     

行波管的一些问题(三)

五、电子注的聚焦从电子枪出来以后,电子注要通过一段与场相互作用的空间。为了防止由于空间电荷本身斥力所造成的分散作用,必须有一种电场或磁场的力把电子注中的电子拘束在一定空间之内,这就是所谓聚焦作用。以下讨论几种聚焦的主要方法。(1)浸透式聚焦——根据电子通常有跟随磁力线运动的规律,可以把整个阴极浸透在一个很强的轴向磁场中,以得到电子注的轴向聚焦。理论和实验证明磁场愈强,电子轨跡偏离磁力线愈小。当磁场强度为     

带状注交错双栅行波管的非线性分析

给出了适用于描述带状注行波管中电子注与慢电磁行波非线性互作用的全三维自洽方程组, 包含场的激发方程、 电子运动方程、电子相位演化方程和能量转化方程。将电子注划分为―粒子线‖的形式,结合交错双栅慢波结构中三维线 路场的形态分布,运用自洽方程组,对0.22THz 带状注交错双栅行波管进行了非线性分析。     

角向周期结构静电脉塞

本文在研究同轴静电脉塞的基础上,系统地分析了角向周期结构静电脉塞的静态场、高频场、电子注在脉塞中的静态运动、群聚机理以及与高频场的能量交换。分析表明:在角向周期结构静电脉塞中,电子注存在同轴静电脉塞所没有的群聚机理;电子注与高频场的能量交换效率比较高。     

非重入式正交场放大器特性的计算

本文推荐了一种非闭合电子注正交场放大器的实际计算方法,这种方法降低了计算的繁复性,同时并未失去放大过程中发生的物理实质。 Epsztein或Gould的小信号理论描述了受空间电荷限制的薄电子注的放大过程。该理论的结论适用于带状电子注扰动还很小的互作用空间初始段,但阻抗小于2000或3000欧的电子注情况例外。当电子注开始很强的群聚     

浸没流多透镜多注电子光学系统的模拟研究

该文采用先2维后3维的计算方法,对L波段高峰值功率多注速调管电子光学系统进行了模拟设计。采用均匀场浸没流多透镜聚焦系统对电子注进行聚焦,获得了通过率100%,填充因子55%,特性良好的旁轴电子注。模拟计算表明,多透镜系统可有效调整电子注平衡半径,电子枪区均匀场可有效调整电子注波动性及层流性,聚集系统可在阴极磁感应强度为0.001~0.01 T,主磁场为0.06~0.13 T的范围内实现对旁轴电子注的良好聚焦。     

Cusptron振荡器的分析与计算

本文对Cusptron进行了理论研究。首先分析了在cusp磁场中电子的运动。在此基础上研究了电子注与驻波场的互作用。在f_o=35GHz对16个翼片的磁控管型腔中H_(511)π摸与电子注互作用(8次回旋谐波)进行了数值计算。考虑了电子注中速度分布、注厚度以及B_k≠B_o等因素对电电效率的影响。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.