用Ti（OC2H5）4制备Ti（CN）涂层研究

本文叙述了采用金属有机物钛酸四乙酯（Ｔｉ［ＯＣ２Ｈ５］４取代四氯化钛，运用ＰＣＶＤ外加热法沉积Ｔｉ（ＣＮ）涂层，并对涂层进行了Ｘ射线衍射（ＸＲＤ）、扫描电镜（ＳＥＭ）、Ｘ光电子（ＸＰＳ）分析，其显微硬度可达到１６００ｋｇ／ｍｍ２，膜层结构仍为柱状晶     

沉积温度对Ti—B—N复合薄膜微结构及力学性能的影响

采用多靶轮流溅射技术，用Ｔｉ和六方氮化硼（ｈ－ＢＮ）反应合成了Ｔｉ－Ｂ－Ｎ薄膜，采用ＸＲＤ、ＴＥＭ和显微硬度计研究了薄膜的微结构及其力学性能。结果表明，室温下沉积的Ｔｉ－Ｂ－Ｎ薄膜为非晶体的Ｔｉ（Ｎ，Ｂ）化合物，其硬度达到ＨＫ２４７０；高温下沉积的薄膜为ＴｉＮ结构类型的Ｔｉ（Ｎ，Ｂ）晶体，薄膜在晶化后硬度略有降低。     

用溶胶—凝胶法制备[（Pb,La）（Zr,Ti）O3]铁电薄膜

利用溶胶－凝胶法制备了［Ｐｂ，Ｌａ）（Ｚｒ，Ｔｉ）Ｏ３］铁电薄膜。利用ＤＴＡ－ＴＧ，ＸＲＤ和ＳＥＭ研究了［（Ｐｂ，Ｌａ）（Ｚｒ，Ｔｉ）Ｏ３］凝胶的分解、晶化过程［（Ｐｂ，Ｌａ）（Ｚｒ，Ｔｉ）Ｏ３］薄膜的显微形貌。为了获得致密无龟裂的［（Ｐｂ，Ｌａ）（Ｚｒ，Ｔｉ）Ｏ３］薄膜，应使用具有适当粘度的前体溶胶，这是通过控制其浓度和水解度来获得的。     

ArF准分子激光立方氮化硼薄膜的制备

采用ＡｒＦ准分子脉冲激光沉积方法（ＰＬＤ），以六方氮化硼（ｈ－ＢＮ）作靶在Ｓｉ（１００）衬底上制备氮化硼薄膜。ＸＲＤ及ＦＴＩＲ透射谱测量表明生成的氮化硼薄膜是含有少量六方氮化硼结构的立方氮化硼（Ｃ－ＢＮ）．ＡＥＳ测量表明不同条件下生成的薄膜中Ｎ与Ｂ的相对含量是不同的，最大比例近乎为１：１，薄膜的维氏显微硬度ＨＶ最大值为１５８０ｋｇ／ｍｍ２。     

水分子在Si（100）面上吸附位的确定

本文用Ｓｉ６６Ｈ５０原子集团模拟Ｓｉ（１００）表面，采用ＣＮＤＯ分子轨道理论方法计算了Ｈ２Ｏ在其上吸附的势能面．确定出Ｈ２Ｏ在Ｓｉ（１００）表面的最佳吸附位为洞位．在桥位Ⅰ、桥位Ⅱ和顶位上吸附时势能依次升高．     

TiO_2薄膜的制备及结构研究

本文探讨了用平面磁控溅射法制备ＴｉＯ２薄膜．研究了ＴｉＯ２薄膜结构随溅射条件（衬底温度、氧分压、工作气压）的变化．用Ｘ射线衍射（ＸＲＤ）测薄膜结构,用Ｘ射线光电子能谱（ＸＰＳ）测薄膜钛氧成分比．得到了制备金红石相和锐钛矿相ＴｉＯ２薄膜的最佳工艺参数．     

生长气氛对Ti~（3＋）：Al_2O_3单晶光纤质量的影响

在不同性质的气氛下，用激光加热基座法（ＬＨＰＧ法），生长Ｔｉ３＋：Ａｌ２Ｏ３单晶光纤。作了显微观察，拍摄了透视照片，同时对其钛离子浓度进行了光谱定量分析．并研究了不同性质的气氛对Ｔｉ３＋：Ａｌ２Ｏ３单晶光纤的内部缺陷（气泡，散射颗粒等）、外部形貌、钛离子浓度的影响。     

Ne^3P0,2）与乙腈的能量转移反应研究

在流动余辉装置上，我们研究了亚稳态原子Ｎｅ（＾３Ｐ０，２）与乙腈的能量转移反应，观察到了ＣＮ（Ａ－Ｘ），ＣＮ（Ｂ－Ｘ），ＣＨ（Ａ－Ｘ）的发射谱。计算了ＣＮ（Ａ，Ｂ）的相对振动粒子数布居，并对该反的机理进行了讨论。     

SDH的现状、引入及发展策略（续）

ＳＤＨ的现状、引入及发展策略（续）江苏省邮电科技情报中心站四、ＳＤＨ墓本网络单元（ＮＥ）的功能及应用ＳＤＨ基本网络单元（ＮＥ）有同步光缆线路系统、同步复用器（ＳＭ）、分插复用器（ＡＤ）和同步数字交叉连接设备（ＳＤＸＣ），功能各不相同。下面仅对分插复用...     

PCVD制备工业硬膜研究

用等离子化学气相沉积技术制备了ＴｉＮ，ＴｉＣ，Ｔｉ（ＣＮ）和（ＴｉＳｉ）Ｎ膜及其组合的多层膜。ＰＣＶＤ具有很好的覆盖性，ＰＣＶＤ－ＴｉＮ具有很好的耐磨耐蚀性，膜与基体结合良好，因而用ＰＣＶＤ法在高速钢刀具，模具及轴承上沉积ＴｉＮ可大大提高其使用寿命。     

Formation of Ti diffusion barrier layers in Thin Cu(Ti) alloy films

In order to study a formation mechanism of thin Ti-rich layers formed on the surfaces of Cu(Ti) wires after annealing at elevated temperatures, the 300-nm-thick Cu(Ti) alloy films with Ti concentration of 1.3 at.% or 2.9 at.% were prepared on the SiO₂/Si substrates by a co-sputter deposition technique. The electrical resistivity and microstructural analysis of these alloy films were carried out before and after annealing at 400°C. The Ti-rich layers with thickness of ∼15 nm were observed to form uniformly both at the film surface and the substrate interfaces in the Cu(2.9at.%Ti) films after annealing (which we call the self-formation of the layers) using Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). Both the resistivities and the microstructures of these Cu(Ti) films were found to depend strongly on the Ti concentrations. The resistivities of the films decreased upon annealing due to segregation of the supersaturated Ti solutes in the alloy films to both the top and bottom of the films. These Ti layers had excellent thermal stability and would be applicable to the self-formed diffusion barrier in Cu interconnects of highly integrated devices. The selection rules of the alloy elements for the barrier self-formation were proposed based on the present results.     

铜(钛)和铜(铬)自形成阻挡层性能表征

采用直流磁控溅射法分别将Cu (Ti)和Cu (Cr)合金层沉积在SiO2/Si衬底上,随后将制得的样品在真空(2×10-3 Pa)中退火1h,退火温度为300 ～ 700℃.对Cu (Ti)及Cu (Cr)自形成阻挡层进行对比研究,通过X射线衍射(XRD)、X射线光电子能谱(XPS)和透射电子显微镜(TEM)观察并表征样品的微观结构.通过半导体分析仪测试样品的电学性能,并分析了其热稳定性.结果表明,在Cu膜中分别加入少量的Ti或Cr可使Cu沿〈111〉晶向择优取向生长.两种样品交界面处的Cu及Si元素含量迅速下降,表明在交界面处自形成阻挡层,抑制了Cu与Si元素之间的扩散.Cu (Ti) /SiO2/Si和Cu (Cr) /SiO2/Si样品漏电流测试结果表明,Cr自形成的阻挡层具有更好的热稳定性.     

Effects of Substrate Materials on Self-Formation of Ti-Rich Interface Layers in Cu(Ti) Alloy Films

In our previous studies, thin Ti-rich layers were found to uniformly cover SiO₂/Si substrate surfaces at the interface with Cu(Ti) alloy films after annealing at elevated temperature. These Ti-rich layers were also found to prevent intermixing between the Cu(Ti) alloy films and the substrate, resulting in a simple barrier formation technique, called “self-formation of the diffusion barrier,” which is attractive for fabrication of ultra-large scale integrated (ULSI) interconnect structures. In the present study, to understand the mechanism of self-formation of the Ti-rich barrier layers on the substrate surface, the effects of SiO₂/Si, SiN/SiO₂/Si and NaCl substrate materials on the interfacial microstructure were investigated. The microstructures were analyzed by transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS), and correlated with the electrical properties of the Cu(Ti) interconnects. It was concluded that the chemical reaction of Ti with the substrate materials was essential for the self-formation of the Ti-rich layers.     

Ti/TiN/Ti(N) PVD liners for W-plug applications

A novel scheme for implementing a same chamber Ti/TiN/Ti(N) W-plug liner is introduced. The Ti(N) cap is the result of a TiN-coated target clean in an argon only plasma. It is found that a process window exists within which a thin flash layer renders the contribution of TiF₃ formation during the CVD W deposition process to via resistance insignificant. At the same time the flash process time is long enough to sufficiently de-nitride the target. The subsequent Ti deposition is pure enough to getter any surface contamination at the bottom of the vias. The W-liner interfaces for flash layers of varying thicknesses are investigated using Auger emission spectroscopy. The electrical results presented demonstrate that the Ti/TiN/Ti(N) liner is comparable to standard liner processes.     

Sr(Zr_(0.1)Ti_(0.9))O_3缓冲层厚度对PZT薄膜结晶及性能的影响

采用sol-gel法制备了具有Sr(Zr0.1Ti0.9)O3缓冲层的PbZr0.52Ti0.48O3(PZT)薄膜,研究了缓冲层厚度对样品结晶和性能的影响。结果表明,较薄缓冲层会诱导PZT薄膜的(111)择优取向,添加单层缓冲层(约20nm)使其(111)取向度提高到90%;较厚缓冲层会抑制PZT薄膜的(111)择优取向,添加四层缓冲层(约80nm)使其(111)取向度降低到9%;缓冲层厚度对样品电性能有显著影响,其剩余极化强度由无缓冲层时的26.8×10–6C/cm2增加到缓冲层厚度约为20nm时的38.8×10–6C/cm2。     

纳米粉体Y2O3:Ti 3+ , Eu3+的光谱性能

采用共沉淀法在氮氢气氛中制备出Y₂O ₃:Ti ³⁺, Eu ³⁺纳米粉体,测量了它的XRD、激发与发射光谱,观测了形貌。通过与Y₂O ₃:Ti ³⁺纳米粉体的光谱比较分析,发现Y₂O ₃中的Ti ³⁺至Eu³⁺存在能量传递,以致紫外至蓝光区域的光,均能使Eu³⁺经5D0→7F2等跃迁通道发射出610nm左右的荧光,于是增强了粉体在红橙光区发光的比重,因此可以调节粉体的发光性能。Y₂O ₃:Ti ³⁺纳米粉体的吸收带从紫外延伸到蓝光区,强荧光带覆盖了整个可见光区,这预示它有望成为新一代白光LED或汞灯的光转换荧光粉。     

CuO对(Ni_(1/3)Nb_(2/3))_(0.7)Ti_(0.3)O_2微波陶瓷低温烧结性能的影响

采用传统固相反应法制作(Ni1/3Nb2/3)0.7Ti0.3O2微波陶瓷,研究了CuO掺杂对所制陶瓷低温烧结性能、微观结构、相构成及微波介电性能的影响。结果表明,掺杂少量的CuO就能显著降低(Ni1/3Nb2/3)0.7Ti0.3O2陶瓷的烧结温度,且能改善陶瓷τf。当CuO掺杂量(质量分数)为1.0%时,(Ni1/3Nb2/3)0.7Ti0.3O2在950℃烧结,显示出良好的微波介电性能:εr=67.65,Q·f=3708GHz,τf=14.3×10-6/℃。     

Sb_2O_3掺杂Ba(Ti_(0.91)Zr_(0.09))O_3陶瓷的结构与性能

采用固相反应法制备了Sb2O3掺杂的Ba(Ti0.91Zr0.09)O3陶瓷,研究了Sb2O3掺杂量(x(Sb2O3)为0.5%～5.0%)对陶瓷晶相结构及介电性能的影响,分析了陶瓷电滞回线变化的原因。结果表明:Sb3+进入了Ba(Ti0.91Zr0.09)O3陶瓷晶格,引起晶格畸变,且无第二相出现。随着Sb2O3掺杂量的增加,陶瓷晶粒逐渐变小变均匀,tanδ减小。Sb2O3掺杂的Ba(Ti0.91Zr0.09)O3陶瓷为弥散相变铁电体,在x(Sb2O3)为3.0%处弥散程度最小。