交指型左手微带天线研究

通过分析交指型左手微带天线结构参数对其辐射性能的影响,给出了适合交指型左手微带天线设计的参数范围.作为实例,设计了L波段交指型左手微带天线单元.与传统微带天线相比,在增益没有恶化的情况下,尺寸大为减小.最后,分别加工了交指型左手微带天线单元以及4×4交指型左手微带天线阵列,实测结果与仿真结果吻合较好,验证了本文提出的方法.     

WLAN小型双频微带天线的设计与分析

在分析传统缝隙微带天线的基础上,用传输线和空腔模型设计了一种可用于WiFi、WiMAX的WLAN微带天线。在贴片与接地板之间引入短路面使天线实现小型化,在贴片上开U型缝隙产生双频辐射,采用较低介电常数的介质基板和添加空气腔展宽了天线的带宽。仿真结果表明,当电压驻波比VSWR<2.0时,天线在2.45 GHz带宽为200 MHz(2.35～2.55 GHz),增益达到3.8 dB;在5.2 GHz带宽为1 050 MHz(5.0～6.05 GHz)增益达到8.8 dB。该天线覆盖了WLAN的所有频段,整体性能良好,增益较高,结构简单,易于实现,可以为实际无线通信系统的应用提供参考。     

一种倒F型双频微带天线设计

微带天线以其体积小,成本低,易于和微带线路集成等优点得到了广泛的应用和发展.结合ADS仿真工具研究设计了一种适用于WLAN系统的倒F型双频微带天线,工作于2.4~2.473 GHz频段和5.15~5.35 GHz频段.通过大量仿真对天线的几何尺寸进行分析,这对天线的设计给予了指导作用.另外,仿真结果表明文中所设计天线性能良好,可方便的用于兼容802.11a/b/g的WLAN无线网卡上.     

基于平面微带结构超介质天线设计与分析

利用开槽曲流技术构建了一种工作频段位于S、C波段内的多频微带贴片天线,根据传统立体左手材料的变型结构设计了一种新型平面微带结构的超介质。在微带贴片天线的介质基板内加载超介质覆层后,天线工作频率降低,频带展宽以及辐射性能得到改善。HFSS和Matlab仿真实验结果表明,新型平面微带结构的超介质在2.7~4.9GHz和5.0~5.5 GHz两个频段内具有等效介电常数和等效磁导率均小于0的左手特性,工作频率在2.66,3.67,4.66和5.49 GHz的微带贴片天线加载超介质覆层后,其谐振频率分别降低了140,140,210和270 MHz,同时4.60~4.78GHz的工作频带展宽了160 MHz。该超介质微带天线可以运用于实际的WLAN或WIMAX通信中。     

一种基于PBG结构的多频微带天线的分析与设计

在C型缝隙微带天线介质基板内引入光子晶体结构,设计了一种基于PBG结构的多频微带天线,此天线采用在C型缝隙天线贴片下方挖出凹槽,将辐射板放入凹槽中,并在微带天线的介质基板中引入高度不同的周期性三角柱空气隙PBG结构的设计方案.采用基于有限元方法的电磁仿真软件Ansoft HFSS10.0对所设计的天线进行了仿真.与普通...     

基于左手介质的小型微带天线

用左手材料设计一种宽频带并且电尺寸小的微带天线,先用开口谐振环和金属杆设计出左手材料,并把它放在微带天线的基板中,利用左手材料的相位补偿特性实现了宽带微带天线的小型化设计。数值仿真结果表明,工作于10．5GHz时,加载了左手材料的微带天线的物理尺寸被大大减小了,天线尺寸从下降到0．21λ,突破了传统微带天线的半波长限制,并且相对带宽增加了5．31％,实现了微带天线的小型化设计。     

一种应用于WLAN的单层宽频微带天线设计

设计了一种应用于WLAN的宽频微带天线,通过开槽技术及引入共面寄生贴片实现天线的三谐振,并在寄生贴片上加载短路销钉减小天线尺寸。利用电磁仿真软件HFSS13.0对天线进行仿真,仿真结果表明,该天线的频带宽度为普通矩形微带天线的3到4倍,并且具有适中的增益。寄生贴片上加载短路销钉后,其面积减小为原来的一半。     

基于左手材料的微带天线小型化设计

针对移动通信对天线小型化的需求,提出了一种基于左手材料实现微带天线小型化的方法。在谐振频率为5.8 GHz的微带天线的接地板上蚀刻圆形单开口谐振环(Circular Split Single-Ring Resonator,CSSRR)结构的左手材料,利用左手材料的后向波特性进行相位补偿,打破传统微带天线半波长电尺寸的束缚,从而达到天线小型化的目的。采用Ansoft HFSS软件进行仿真,分析了CSSRR结构的电磁特性和小型化天线的性能。仿真结果表明,小型化天线与传统微带天线相比辐射贴片的尺寸减小37.52%,带宽略有增加,增益等参数性能基本保持不变。而且该小型化微带天线结构简单,易于实现。     

一种应用于WLAN的容性馈电微带天线设计

在简单矩形微带天线的基础上,通过加一容性馈电贴片设计了一种应用于WLAN的微带天线。通过在矩形微带天线对角线馈电的方式实现了双频;容性馈电贴片的引入,抵消了因馈电探针过长而使天线输入阻抗呈感性的影响,从而展宽了天线的阻抗带宽。仿真结果表明,当回波损耗S11–10 dB时,天线在2.44 GHz处带宽为120MHz(2.38~2.50 GHz),增益为5.7 dB;在5.42 GHz处带宽为1 GHz(5.12~6.12 GHz),增益为8.4 dB。该天线全面覆盖了WLAN所要求的频段,且性能良好,结构简单。     

一种基于超材料的小型化宽带微带天线

分别将创新设计的“四方形”超材料单元和周期条形缝隙蚀刻在普通微带天线的辐射贴片和接地板上,设计了工作在3.67~14.17 GHz 的一种小型化宽带高增益微带天线。与原始的天线相比,新型天线的谐振中心频率降低了44.8%,相对带宽从2.7%扩展到243.1%,同时保持了良好的增益。实物测试结果与仿真结果吻合较好。因为超材料的左手传输特性影响了微带天线介质基板的等效媒质参数,导致天线的辐射场主要集中在水平方向,而不是传统的微带天线的垂直方向。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.