随机时分神经计算理论用于视觉曲线自激增强

利用空间分布满足曲线规则(位置和定向连续性)的局部刺激之间的相互激励,称为曲线自激,这是发现视觉边界曲线和抑制局部噪声的有效手段.过去的工作均采用并行结构区分的计算方式,曲线自激并没有达到满意的效果.本文提出随机时分动态自激的计算方案,对不同的曲线实施随机时分的搜索、时间一致性滤波、和自激积累等机制.本文给出了实现的原理方案.     

扩展自相似过程的表示及其性质

本文对于文献[5]中所提出的扩展自相似过程，给出了这一过程的一般表示形式，并基于此对扩展自相似过程进行了详细的解释，给出了扩展自相似过程压缩函数的基本性质，对于深入理解扩展自相似过程的行为机理、建立数据和过程的扩展自相似模型及有关扩展自相似过程的研究与应用有重要意义。最后给出了有关自相似过程判断的实验结果。     

一种光子相关器动态范围自适应调整方法与实现

目前广泛应用的光子相关光谱(PCS)颗粒测量系统中, 光子相关器动态范围的设置需要与实际待测颗粒的光强自相关函数曲线衰减区间相匹配, 这样, 相关器才能给出具有最佳分辨率的自相关函数曲线。然而, 在实际测量过程中, 待测颗粒体系的粒度分布范围通常是未知的, 因此需要对参数进行多次修正才能得到最佳的分辨率效果。对此, 提出一种可根据被测颗粒体系的粒度分布范围变化, 自适应修正测量参数进行光子相关器动态范围调整的方法。该方法通过初始采样时间的选择和相关通道采样时间的再分配, 实现测量过程中的相关器动态范围调整, 使其与待测颗粒体系的光强相关函数曲线衰减区间相匹配, 从而保证在任意颗粒系的测量中都能得到分辨率最佳的自相关函数曲线。     

短波慢跳频同步系统的分析和研究

文章分析了跳频通信系统几种常用的同步方法,并进行比较,给出了它们各自的平均捕获时间计算公式。此外,文章还详细分析了滑动相关自同步法的原理及电路构造,给出了一定参数情况下滑动相关同步法的性能曲线。     

一种X波段低相噪跳频源的设计

基于小数分频锁相环HMC704LP4设计了一种X波段跳频源,具有相位噪声低、杂散低、体积小的特点。针对指标要求拟定设计方案,简述设计过程,给出设计参数,对关键指标进行分析仿真,并给出测试曲线。     

FIR窄带滤波器组在现代雷达中的实现和优化方法

提出了一种动目标检测滤波器组在FPGA中的设计方法,给出了FIR滤波器组的设计原则和滤波器的设计步骤,并给出一组滤波器的频响曲线,运用该滤波器对某雷达回波数据进行了处理。实现了滤波器组在FPGA中的应用,并就实现过程作出了优化。     

一种双边多议题自治协商模型的研究

针对电子商务应用,该文提出一种双边多议题自治协商模型。该模型用几种向量对协商议题进行形式化描述;定义两种效用评价函数刻画效用评价机制;引入贝叶斯决策理论,实现协商过程agent自学习;对传统合同网协议进行扩展,用于控制双方的协商交互;结合agent自学习,给出了3种提议策略。实验表明该模型是有效的,具有较强的实用性。     

超高斯光脉冲自相关特性

采用数值分析方法研究了超高斯光脉冲的自相关特性及其受锐度参量、线性啁啾参量、噪声脉冲和随机噪声影响的变化规律,并与原脉冲相应参量作了比较,给出了一个有效的滤除随机噪声方法,并用实验作了验证。当锐度参量增加时,强度自相关曲线宽度变窄,自相关频谱曲线随之展宽。当啁啾参量增大时,光脉冲强度自相关曲线和脉冲时域波均保持不变;光脉冲的频谱曲线展宽,边缘出现振荡结构并随之增强,自相关频谱曲线随之展宽,边缘依旧平滑。存在噪声的情况下,超高斯脉冲自相关特性变化比较复杂。     

曲线光顺在惯导平台自标定中的应用

提出了一种新的惯导平台自标定数据处理方法——曲线光顺法。根据自标定数据特点给出了适于自标定数据的曲线光顺准则。分析了野值对曲线二阶差商的影响规律,提出了一种野值剔除算法。通过将最小二乘与B样条结合得出二阶差商参考值,并使实际差商与参考差商距离达到最小从而得到野值修改值。实验结果表明,该文的算法能很好地解决惯导平台自标定数据的野值剔除问题,可通过调节参数来控制光顺精度,并具有算法简便、易于操作的优点。     

存储器的编码增益

本文首先定义了存储器的编码自增益、互增益和它们的推广形式,导出了计算公式。然后举例给出了计算结果和曲线,并进行了分析讨论,为系统设计者提供了一种定量的选码标准。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.