共查询到15条相似文献,搜索用时 93 毫秒
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文章主要论述了微机电系统(MEMS)和微系统诸如微传感器、驱动器和微流体元件的电机封装技术、封装等级和封装技术相关的问题.首先陈述并讨论了典型的MEMS产品诸如微压传感器、加速度计和微泵;微电子封装和微系统封装技术,重点阐述芯片级封装技术和器件级封装技术问题.芯片级封装技术主要涉及芯片钝化、芯片隔离和芯片压焊;器件级封... 相似文献
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大量试验和数值仿真结果均已确认封装-器件的热失配对MEMS器件性能及可靠性有显著影响,即热致封装效应.然而迄今为止仍缺乏有效的物理模型对此加以系统描述.本文基于单元库法思想和节点法分析手段构建了MEMS热致封装效应的理论模型.通过对非器件结构如锚区、衬底等标准化单元建模,扩充了节点分析法在封装级MEMS仿真领域的应用.文中以常见MEMS基本器件和封装结构为例进行了研究,计算了热致封装效应对器件谐振特性的影响,并利用有限元仿真进行验证.最后讨论了封装级MEMS设计面临的挑战. 相似文献
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综述了微电子机械系统(MEMS)封装主流技术,包括芯片级封装、器件级封装和系统及封装技术进行了。重点介绍了圆片级键合、倒装焊等封装技术。并对MEMS封装的技术瓶颈进行了分析。 相似文献
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MEMS局部加热封装技术与应用 总被引:1,自引:0,他引:1
随着半导体技术的发展,封装集成度不断提高,迫切需要发展一种低温封装与键合技术,满足热敏器件封装和热膨胀系数差较大的同质或异质材料间的键合需求。针对现有整体加热封装技术的不足,首先介绍了局部加热封装技术的原理与方法,然后对电流加热、激光加热、微波加热、感应加热和反应加热等几种局部加热封装技术进行了比较分析,最后具体介绍了局部加热封装技术在热敏器件封装、MEMS封装和异质材料集成等方面的应用。由于局部加热封装技术具有效率高、对器件热影响小等优点,有望在MEMS技术、系统封装(SiP)、三维封装及光电集成等领域得到广泛应用。 相似文献
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Sungho Jin 《Journal of Electronic Materials》2003,32(12):1366-1370
In packaging of microelectromechanical systems (MEMS), optical, and electronic devices, there is a need to directly bond a
wide variety of inorganic materials, such as oxides, nitrides, and semiconductors. Such applications involve hermetic-sealing
components, three-dimensional MEMS assembly components as well as active semiconductor or optical components, dielectric layers,
diffusion barriers, waveguides, and heat sinks. These materials are known to be very difficult to wet and bond with low melting-point
solders. New Sn-Ag- or Au-Sn-based universal solders doped with a small amount of rare-earth (RE) elements have been developed,
which now allow direct and powerful bonding onto the surfaces of various MEMS, optical, or electronic device materials. The
microstructure, interface properties, and mechanical behavior of the bonds as well as the potential packaging applications
of these new solder materials for MEMS and optical fiber devices are described. Various packaging-related structural, thermal,
or electrical issues in MEMS are also discussed. 相似文献
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Qian Wang Sung-Hoon Choa Woonbae Kim Junsik Hwang Sukjin Ham Changyoul Moon 《Journal of Electronic Materials》2006,35(3):425-432
Development of packaging is one of the critical issues toward realizing commercialization of radio-frequency-microelectromechanical
system (RF-MEMS) devices. The RF-MEMS package should be designed to have small size, hermetic protection, good RF performance,
and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low-temperature
hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology
at temperatures below 300°C is used. Au-Sn multilayer metallization with a square loop of 70 μm in width is performed. The
electrical feed-through is achieved by the vertical through-hole via filling with electroplated Cu. The size of the MEMS package
is 1 mm × 1 mm × 700 μm. The shear strength and hermeticity of the package satisfies the requirements of MIL-STD-883F. Any
organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB
at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical
damage of the package after several reliability tests. 相似文献
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为了解决MEMS封装过程中易对微致动件造成损伤的问题,提出了一种低成本、与CMOS工艺兼容的晶圆级薄膜封装技术,用等离子体增强化学气相淀积(PECVD)法制备的低应力SiC作为封装和密封材料。此材料的杨氏模量为460 GPa,残余应力为65 MPa,可使MEMS器件悬浮时封装部位不变形。与GaAs,Si半导体材料相比,SiC具有较佳的物理稳定性,较高的杨氏模量等性能优势。将PECVD薄膜封装技术用于表面微结构和绝缘膜上Si(SOI)微结构部件(如射频开关、微加速度计等)封装中,不仅减小了封装尺寸,降低了芯片厚度,简化了封装工艺,而且封装芯片还与CMOS工艺兼容。较之晶圆键合封装方式,此晶圆级薄膜封装成本可降低5%左右。 相似文献